BD52W01G-C [ROHM]

ROHM可灵活设置延迟时间的窗口电压检测器IC系列是采用CMOS工艺的、内置高精度且低耗电量的延迟电路的CMOS复位IC系列产品,延迟时间可通过外置电容器进行设置。输出形式为Nch开漏,Dual输出。在从-40℃到+125℃的整个工作温度范围内,将延迟时间精度控制在±50%以内。;
BD52W01G-C
型号: BD52W01G-C
厂家: ROHM    ROHM
描述:

ROHM可灵活设置延迟时间的窗口电压检测器IC系列是采用CMOS工艺的、内置高精度且低耗电量的延迟电路的CMOS复位IC系列产品,延迟时间可通过外置电容器进行设置。输出形式为Nch开漏,Dual输出。在从-40℃到+125℃的整个工作温度范围内,将延迟时间精度控制在±50%以内。

电容器
文件: 总23页 (文件大小:1375K)
中文:  中文翻译
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Nano EnergyTM  
Datasheet  
Voltage Detector (Reset) IC Series for Automotive Application  
Free Time Delay Setting Dual Output  
Window Voltage Detector (Reset) IC  
BD52WxxG-C  
General Description  
Key Specifications  
ROHM's free time delay setting window voltage  
detector ICs are highly accurate, with low current  
consumption feature that uses CMOS process. Delay  
time setting can be control by an external capacitor. It  
has dual N-channel open drain output. The time delay  
Over Voltage Detection:  
1.32 V, 1.65 V, 1.98 V, 2.75 V, 3.63 V, 5.50 V (Typ)  
Under Voltage Detection:  
1.08 V, 1.35 V, 1.62 V, 2.25 V, 2.97 V, 4.50 V (Typ)  
Ultra-Low Current Consumption:  
300 nA (Typ)  
±50 % (-40 °C to +125 °C)  
(CT pin capacitor ≥ 1 nF)  
has ±50  
% accuracy for the entire operating  
Delay Time Accuracy:  
temperature range of -40 °C to +125 °C.  
Features  
Nano Energy™  
AEC-Q100 Qualified(Note 1)  
Special Characteristics  
Detection Voltage Accuracy:  
Functional Safety Supportive Automotive Products  
Under and Over Voltage Monitor  
Free Time Delay Setting  
±5.0 % (-40 °C to +125 °C)  
Package  
W (Typ) x D (Typ) x H (Max)  
2.9 mm x 2.8 mm x 1.25 mm  
Nch Open Drain Output  
SSOP6:  
Very Small, Lightweight and Thin Package  
SSOP6 Package is Similar to SOT-23-6 (JEDEC)  
(Note 1) Grade 1  
Application  
All Automotive Devices That Requires Voltage Detection  
Typical Application Circuit  
VSENSE  
VDD2  
VDD1  
VDD SENSE  
UVB  
RST  
CT  
OVB  
Microcontroller  
GND  
CCT  
GND  
Nano Energy™ is a trademark or a registered trademark of ROHM Co., Ltd.  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
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05.Nov.2021 Rev.003  
1/20  
BD52WxxG-C  
Pin Configuration  
SSOP6  
TOP VIEW  
SENSE GND OVB  
4
3
CT  
UVB  
VDD  
Pin Description  
Pin No.  
1
Pin Name  
CT  
Function  
Capacitor connection pin for output  
delay time setting  
2
3
4
5
6
VDD  
UVB  
Power supply voltage  
Under voltage detection output pin  
Over voltage detection output pin  
GND  
OVB  
GND  
SENSE  
SENSE pin  
Block Diagram  
VDD  
(Note)  
UVB  
OVB  
SENSE  
(Note)  
(Note)  
Delay  
(Note)  
Vref  
Circuit  
(Note)  
GND  
CT  
(Note) Parasitic Diode  
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© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
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BD52WxxG-C  
Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Symbol  
VDD  
Limit  
-0.3 to +7  
-0.3 to +7  
(GND - 0.3) to +7  
(GND - 0.3) to +7  
(GND - 0.3) to +7  
70  
Unit  
V
Power Supply Voltage  
SENSE Pin Voltage  
VSENSE  
VCT  
CT Pin Voltage  
VUVB  
UVB Pin Voltage  
VOVB  
IOUVB  
IOOVB  
Tjmax  
Tstg  
OVB Pin Voltage  
UVB Pin Output Current  
OVB Pin Output Current  
Maximum Junction Temperature  
Storage Temperature Range  
mA  
70  
+150  
°C  
°C  
-55 to +150  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing  
board size and copper area so as not to exceed the maximum junction temperature rating.  
Thermal Resistance(Note 1)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 3)  
2s2p(Note 4)  
SSOP6  
Junction to Ambient  
Junction to Top Characterization Parameter(Note 2)  
θJA  
376.5  
40  
185.4  
30  
°C/W  
°C/W  
ΨJT  
(Note 1) Based on JESD51-2A (Still-Air).  
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface  
of the component package.  
(Note 3) Using a PCB board based on JESD51-3.  
(Note 4) Using a PCB board based on JESD51-7.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3 mm x 76.2 mm x 1.57 mmt  
Top  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
114.3 mm x 76.2 mm x 1.6 mmt  
2 Internal Layers  
4 Layers  
Top  
Copper Pattern  
Bottom  
Copper Pattern  
74.2 mm x 74.2 mm  
Thickness  
70 μm  
Copper Pattern  
Thickness  
35 μm  
Thickness  
70 μm  
Footprints and Traces  
74.2 mm x 74.2 mm  
Recommended Operating Conditions  
Parameter  
Symbol  
VDD  
Min  
1.6  
0
Typ  
Max  
6.0  
Unit  
Operating Supply Voltage  
SENSE Pin Voltage  
-
-
V
V
VSENSE  
Topr  
6.0  
Operating Temperature  
-40  
+25  
+125  
°C  
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© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
3/20  
BD52WxxG-C  
Electrical Characteristics (Unless otherwise specified Ta = -40 °C to +125 °C, VDD = 1.6 V to 6.0 V)  
Limit  
Parameter  
Symbol  
Condition  
Unit  
V
Min  
1.02  
1.28  
1.54  
2.13  
2.82  
4.27  
1.25  
1.56  
1.88  
2.61  
3.45  
5.22  
-
Typ  
1.08  
1.35  
1.62  
2.25  
2.97  
4.50  
1.32  
1.65  
1.98  
2.75  
3.63  
5.50  
Max  
1.14  
1.42  
1.70  
2.37  
3.12  
4.73  
1.39  
1.74  
2.08  
2.89  
3.82  
5.78  
BD52W01G-C  
BD52W02G-C  
BD52W03G-C  
BD52W04G-C  
BD52W05G-C  
BD52W06G-C  
BD52W01G-C  
BD52W02G-C  
BD52W03G-C  
BD52W04G-C  
BD52W05G-C  
BD52W06G-C  
Under Voltage  
VUVDET  
VSENSE = H→L, RL = 100 kΩ  
Detection Voltage  
Over Voltage  
VOVDET  
VSENSE = L→H, RL = 100 kΩ  
V
Detection Voltage  
Circuit Current  
UVB Operating  
Voltage Range  
OVB Operating  
Voltage Range  
IDD  
VDD = VSENSE = (VUVDET + VOVDET) / 2  
VOLUVB ≤ 0.4 V, Ta = -40 °C to +125 °C,  
RL = 100 kΩ  
nA  
V
300  
3000  
VOPLUVB  
1.6  
1.6  
-
-
VOLOVB ≤ 0.4 V, Ta = -40 °C to +125 °C,  
RL = 100 kΩ  
VOPLOVB  
VOLUVB  
VOLOVB  
tPLH  
-
-
V
V
VSENSE < VUVDET, VDD = 1.6 V, ISINK = 1.0 mA  
VSENSE < VUVDET, VDD = 2.4 V, ISINK = 2.0 mA  
VSENSE > VOVDET, VDD = 1.6 V, ISINK = 1.0 mA  
VSENSE > VOVDET, VDD = 2.4 V, ISINK = 2.0 mA  
-
-
-
-
-
-
-
-
0.4  
0.4  
0.4  
0.4  
UVB “Low” Output Voltage  
OVB “Low” Output Voltage  
V
LH Propagation  
Delay Time  
VUVB = GND50 %, CCT = 0.01 μF, VDD = 3.0 V  
27.7  
55.5  
83.2  
ms  
(Note 1)  
RL: Pull-up resistor connected between UVB, OVB and power supply.  
(Note 1) CT delay capacitor range: open to 4.7 μF.  
Function Explanation  
1. Nano Energy™  
Nano Energy™ is a combination of technologies which realizes ultra low quiescent current operation.  
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© 2019 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 15 • 001  
TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
4/20  
BD52WxxG-C  
Typical Performance Curves  
1.0  
0.9  
0.8  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
+125 °C  
6.0 V  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
3.0 V  
+25 °C  
-40 °C  
1.6 V  
1
2
3
4
5
6
-50 -25  
0
25  
50  
75 100 125 150  
Operating Supply Voltage: VDD [V]  
Temperature: Ta [°C]  
Figure 1. Circuit Current vs Operating Supply  
Voltage (VDD = SENSE)  
Figure 2. Circuit Current vs Temperature  
(VDD = SENSE)  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
2.1  
2.0  
1.9  
1.8  
1.7  
1.6  
1.5  
BD52W03G-C  
VOVDET  
BD52W03G-C  
VOVDET  
VUVDET  
VUVDET  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
-50 -25  
0
25  
50  
75 100 125 150  
Operating Supply Voltage: VDD [V]  
Temperature: Ta [°C]  
Figure 3. Detection Voltage vs Operating Supply  
Voltage (Ta = 25 °C)  
Figure 4. Detection Voltage vs Temperature  
(VDD = 3 V)  
(Note) The above data is measurement value of typical sample, it is not guaranteed.  
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TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
© 2019 ROHM Co., Ltd. All rights reserved.  
5/20  
TSZ22111 • 15 • 001  
BD52WxxG-C  
Typical Performance Curves - continued  
2.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
UVB  
UVB  
1.0  
OVB  
OVB  
0.5  
0.0  
-50 -25  
0
25  
50  
75 100 125 150  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Temperature: Ta [°C]  
Operating Supply Voltage: VDD [V]  
Figure 5. Hysteresis Voltage vs Operating Supply  
Voltage (Ta = 25 °C)  
Figure 6. Hysteresis Voltage vs Temperature  
(VDD = 3 V)  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
Pull-up to 5 V  
Pull-up resistance: 100 kΩ  
Pull-up to 5 V  
Pull-up resistance: 100 kΩ  
BD52W03G-C  
OVB  
UVB  
1.5  
1.6  
1.7  
1.8  
1.9  
2.0  
2.1  
-50 -25  
0
25  
50  
75 100 125 150  
Operating Supply Voltage: VDD [V]  
Temperature: Ta [°C]  
Figure 8. Operating Voltage vs Temperature  
Figure 7. Output Voltage vs Operating Supply  
Voltage  
(Ta = 25 °C, VDD = SENSE, UVB = OVB)  
(Note) The above data is measurement value of typical sample, it is not guaranteed.  
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TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
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6/20  
TSZ22111 • 15 • 001  
BD52WxxG-C  
Typical Performance Curves - continued  
90  
80  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
VDD = 2.4 V (OVB)  
70  
60  
VDD = 2.4 V (UVB)  
VDD = 2.4 V (OVB)  
50  
VDD = 1.6 V (OVB)  
40  
VDD = 2.4 V (UVB)  
30  
VDD = 1.6 V (OVB)  
20  
VDD = 1.6 V (UVB)  
VDD = 1.6 V (UVB)  
10  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
-50 -25  
0
25  
50  
75 100 125 150  
Drain-Source Voltage : VDS [V]  
Temperature: Ta [°C]  
Figure 9. “Low” Output Current vs Drain-Source  
Voltage (Ta = 25 °C)  
Figure 10. “Low” Output Current vs Temperature  
(VDS = 0.4 V)  
90  
80  
70  
60  
50  
40  
30  
20  
90  
80  
70  
60  
50  
40  
30  
20  
OVB  
UVB  
OVB  
UVB  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
-50 -25  
0
25  
50  
75 100 125 150  
Operating Supply Voltage: VDD [V]  
Temperature: Ta [°C]  
Figure 12. L→H Propagation Delay Time vs  
Temperature (VDD = 3 V, CCT = 10 nF)  
Figure 11. L→H Propagation Delay Time vs  
Operating Supply Voltage  
(Ta = 25 °C, CCT = 10 nF)  
(Note) The above data is measurement value of typical sample, it is not guaranteed.  
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TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
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7/20  
TSZ22111 • 15 • 001  
BD52WxxG-C  
Typical Performance Curves - continued  
120  
100  
120  
100  
80  
60  
40  
20  
0
80  
60  
40  
20  
0
UVB  
UVB  
OVB  
OVB  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
-50 -25  
0
25  
50  
75 100 125 150  
Operating Supply Voltage: VDD [V]  
Temperature: Ta [°C]  
Figure 13. H→L Propagation Delay Time vs  
Operating Supply Voltage  
(Ta = 25 °C)  
Figure 14. H→L Propagation Delay Time vs  
Temperature (VDD = 3 V)  
100000  
10000  
1000  
100  
70  
60  
50  
40  
30  
20  
10  
0
UVB  
UVB  
OVB  
10  
OVB  
1
0.1  
0.0001  
0.001  
0.01  
0.1  
1
10  
0.0001  
0.001  
0.01  
0.1  
1
10  
CT Pin Capacitance: CCT [µF]  
CT Pin Capacitance: CCT [µF]  
Figure 15. L→H Propagation Delay Time vs CT  
Pin Capacitance (VDD = 3 V, Ta = 25 °C)  
Figure 16. H→L Propagation Delay Time vs CT  
Pin Capacitance (VDD = 3 V, Ta = 25 °C)  
(Note) The above data is measurement value of typical sample, it is not guaranteed.  
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TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
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8/20  
TSZ22111 • 15 • 001  
BD52WxxG-C  
Timing Chart  
The following shows the change of the output voltages when operating supply voltage (VDD) and SENSE pin Voltage (VSENSE  
)
sweep.  
VSENSE  
VDD  
VDD  
Vref  
RL  
UVB  
RL  
SENSE  
CVDD  
Delay  
OVB  
Circuit  
CL  
GND  
CL  
CT  
CCT  
Figure 17. Set-up diagram  
VDD  
VOPL: <1.6 V  
VOPL: <1.6 V  
VSENSE  
VOVDET  
VOVREL  
VUVDET  
VUVREL  
VUVB  
tPLH  
VOVB  
tPLH  
5
1
2
3
4
6
4
7
1
Figure 18. Timing Chart  
Operating Conditions Explanation  
1. The Output Voltage (VOVB and VUVB) becomes unstable until VDD exceeds the Minimum Operating Voltage (VOPL).  
2. When VDD exceeds the Minimum Operating Voltage (VOPL) but VSENSE is the Under Voltage Detection Voltage (VUVDET  
)
or less, VUVB changes to “L” and VOVB changes to “H”. However, this change depends on the VUVB and VOVB rise time  
when the power supply starts up, so thorough confirmation is required.  
3. When VSENSE rises and exceeds the Under Voltage Release Voltage (VUVREL), delay time (tPLH) set by the capacitor at  
CT pin (CCT) happens and VUVB switches from “L” to “H”.  
4. Both Under Voltage and Over Voltage are undetected so VUVB and VOVB remains “H”.  
5. When VSENSE rises further and exceeds the Over Voltage Detection Voltage (VOVDET), VOVB changes from “H” to “L” and  
state becomes Over Voltage Detection.  
6. When VSENSE drops and falls below the Over Voltage Release Voltage (VOVREL), delay time (tPLH) set by the capacitor at  
CT pin (CCT) happens and VOVB switches from “L” to “H”.  
7. When VSENSE decreases further and falls below the Under Voltage Detection Voltage (VUVDET), VUVB changes from “H”  
to “L” and state becomes Under Voltage Detection.  
(Note) The potential difference between the detection voltage and the release voltage is known as the Hysteresis Voltage width. The system is designed such  
that the output will not toggle with power supply fluctuations within this hysteresis width, preventing malfunctions due to noise.  
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TSZ22111 • 15 • 001  
TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
9/20  
BD52WxxG-C  
Application Information  
Operation Description  
The detection and release voltage are used as threshold voltages. When the voltage applied to the SENSE pin reaches the  
applicable threshold voltage, the VOVB and VUVB levels switch from either “H” to “L” or “L” to “H”. BD52WxxG-C have delay time  
function, which set tPLH using an external capacitor connected in CT pin (CCT) when output switches “L” to “H”. Because the  
BD52WxxG-C uses an open drain output type, it is necessary to connect a pull-up resistor to VDD or another power supply. (In  
this case, the output “H” voltage becomes VDD or the voltage of another power supply).  
Setting of Detector Delay Time  
The detection release delay time (tPLH) can be set according to the CCT value of the capacitor connected to the CT pin. The  
detection release delay time (tPLH) is the time when VUVB or VOVB rises to 1/2 of VDD after VSENSE rises and exceeds the under  
voltage release voltage (VUVREL) or VSENSE drops and falls below the Over Voltage Release Voltage (VOVREL) after VDD rising.  
The delay time is calculated from the following formula. When CT capacitor is 1 nF or more, delay time when CT pin is open  
(tCTO) has less effect and tPLH computation is shown on Example No. 2. The result has ±50 % tolerance within the operating  
temperature range of -40 °C to +125 °C.  
Formula: (Ta = 25 °C)  
푃퐿퐻 = 퐶ꢀ푇 × 퐷푒푙푎푦 퐶표푒푓푓푖푐푖푒푛푡 + 푡ꢀ푇푂 [s]  
where:  
CCT is the CT pin external capacitor.  
Delay Coefficient is equal to 5.55 x 106.  
tCTO is the delay time when CT = open(Note 1)  
Delay time (tCTO  
)
Temperature range  
UVB  
Typ  
OVB  
Typ  
Min  
Max  
Min  
Max  
Ta = -40 °C to +125 °C  
30 μs  
85 μs  
250 μs  
40 μs  
125 μs  
600 μs  
(Note 1) tCTO is design guarantee only.  
Example No. 1:  
CT capacitor = 100 pF  
−ꢃ2  
× 5.55 × 106 × 0.5 + 30 × 10−6 = 308 μs  
)
(
푃퐿퐻_푚ꢁꢂ = 100 × 10  
−ꢃ2  
× 5.55 × 106 × 1.0 + 85 × 10−6 = ꢆ40 μs  
)
(
푃퐿퐻_ꢄꢅ푝 = 100 × 10  
−ꢃ2  
× 5.55 × 106 × 1.5 + ꢈ50 × 10−6 = 1083 μs  
)
(
푃퐿퐻_푚ꢇ푥 = 100 × 10  
Example No. 2:  
CT capacitor = 1 nF  
푃퐿퐻_ꢄꢅ푝 = 1 × 10−9 × 5.55 × 106 = 5.55 ms  
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TSZ22111 • 15 • 001  
TSZ02201-0GAG2G600090-1-2  
05.Nov.2021 Rev.003  
10/20  
BD52WxxG-C  
Application Information - continued  
Bypass Capacitor for Noise Rejection  
For the stable operation of the IC, put capacitor 0.1 μF or more between the VDD and GND pin and connect it closer to the pin  
as possible. When using extremely big capacitors, the transient response speed becomes slow so check thoroughly.  
External Parameters  
The recommended value of CT capacitor is from open to 4.7 μF and pull-up resistance value is 50 kΩ to 1 MΩ. Since the  
changes are brought by many factors (circuit configuration, board layout, etc.) when using, ensure that confirmation of the real  
function was carried out. In addition, this IC has high impedance design. So depending on the condition of use, this may be  
affected by unexpected leak route due to the uncleanness of PCB surface. For example, if a 10 MΩ leakage is assumed between  
the output and GND pins, it is recommended to set the value of pull-up resistor to 1/10 or less of the impedance of assumed  
leakage route.  
Behavior at less than the Operating Voltage Range  
When VDD falls less than the operating voltage range, output will be undefined. When output is connected to pull-up voltage,  
output will be equivalent to pull-up voltage.  
Precautions when Steep Power Supply Rise  
In case of a steep power supply rise, the output may be unstable even if VDD exceeds the operating voltage range. This is due  
to the undefined output when the supply is less than the operating voltage range of the IC. When this waveform affects the  
application, make the rise time slower by attaching capacitor to VDD (CVDD). Make the VDD Rise Time to 200 μs or more.  
CT Pin Discharge  
Due to the capabilities of the CT pin discharge transistor, the CT pin may not completely discharge when a short input pulse is  
applied, and in this case, the delay time may not be controlled. Verify the actual operation.  
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BD52WxxG-C  
Application Examples  
Examples of the Power Supply with Resistor Dividers  
The following shows example of applications of a resistor divider circuit in applications which the resistor connected to the  
power supply voltage (VDD) of an IC. In case of the VDD pin is shorted to the SENSE pin, When the output logic changes its  
state, an Inrush current will flow suddenly into the circuit. This current flow may cause malfunction in the systems operation  
such as output oscillations, etc. The recommended value of RA is 4.7 kΩ or less, and CVDD is 0.1 μF or more. (Inrush current  
will flow suddenly from the power supply (VDD) to GND when the output level switches to “H” or “L”.)  
VIN  
(Note 1)  
RA  
(RA 4.7 kΩ)  
IDD  
I1  
VDD  
SENSE  
RL  
VUVB  
Inrush current  
(Note 1)  
RB  
CVDD  
(CVDD 0.1 µF)  
VOVB  
CL  
GND  
VDD  
0
VDET  
Figure 19. Resistor Divider Connection Application  
Figure 20. Current Consumption vs VDD Voltage  
(Note 1) The circuit example mentioned above does not guarantee successful operation.  
Perform thorough evaluation using the actual application and set countermeasures.  
For example, during low voltage detection release, a voltage drop [Inrush current (I1)] x [input resistor (RA)] is caused by the  
Inrush current when output changes from “L” to “H”, and causes the input voltage to drop. When the input voltage drops and  
falls below the detection voltage, the output will switch from “H” to “L”. At this time, the Inrush current stops flowing through  
output “L”, and the voltage drop disappears. As a result, the output switches from “L” to “H”, which again causes the Inrush  
current to flow and the voltage to drop. This operation repeats and leads to oscillation. In case resistor divider is not use and  
only use RA, same response will happen. In addition, note that the same phenomenon occurs during over voltage detection.  
160  
BD52W03G-C  
140  
120  
CVDD = open  
100  
80  
CVDD = 0.1 μF  
60  
CVDD = 10 μF  
40  
20  
0
1.0  
10.0  
100.0  
RA [kΩ]  
Figure 21. ΔVDET vs RA (Reference)  
(Ta = 125 °C, VIN = SWEEP)  
The graph above shows the deviation of detection voltage ΔVDET dependent on RA and CVDD  
.
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BD52WxxG-C  
Examples of the Power Supply with Resistor Dividers - continued  
Depending on the application set-up, there are times that VDD voltage is always below the Release Voltage because of the  
effect of Inrush current as shown follows.  
Voltage  
VIN  
ΔVDROP = Inrush Current x RA  
VUVDET + ΔVUVDET  
VDD  
Hysteresis Voltage (ΔVUVDET  
)
VUVDET  
t
Figure 22. VDD Drop Caused by Inrush Current  
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BD52WxxG-C  
Application Examples - continued  
Considerations on Input and Output Capacitor  
It is suggested to use capacitors between the input pin and GND, and the output pin and GND, which is positioned as near  
as possible to the pins. The capacitor between the input pin and GND is effective when the power supply impedance  
increases or when the wiring is long. A large capacitor between the output pin and GND improves stability and output load  
characteristics. Check the state of mounting. In addition, the ceramic capacitor deviates and has temperature characteristics  
and AC bias characteristics in general. Furthermore, depending on the usage, the capacitance value decreases over time.  
It is recommended that ceramic capacitor to use is decided after gathering detailed data information by consulting brand  
manufacturers.  
10 V withstand voltage  
B1 characteristics  
10  
0
-10  
10 V withstand voltage  
B characteristics  
-20  
-30  
6.3 V withstand voltage  
B characteristics  
10 V withstand voltage  
-40  
F characteristics  
-50  
-60  
4 V withstand voltage  
X6S characteristics  
-70  
-80  
-90  
-100  
0
1
2
3
4
DC Bias Voltage [V]  
Figure 23. Ceramic Capacitance Change vs DC Bias voltage  
(Characteristic example)  
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BD52WxxG-C  
I/O Equivalence Circuits  
Pin No.  
Pin Name  
Pin Description  
Equivalence Circuit  
2
Capacitor connection pin for  
output delay time setting  
1
CT  
1
5
3, 4  
Under voltage detection output  
3
4
UVB  
OVB  
pin  
Over voltage detection output  
pin  
5
6
6
SENSE  
SENSE pin  
5
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BD52WxxG-C  
Operational Notes  
1. Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
2. Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at  
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
3. Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.  
4. Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5. Recommended Operating Conditions  
The function and operation of the IC are guaranteed within the range specified by the recommended operating  
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical  
characteristics.  
6. Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing  
of connections.  
7. Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
8. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
9. Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
10. Regarding the Input Pin of the IC  
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation  
of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.  
Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower  
than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power supply  
voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have voltages  
within the values specified in the electrical characteristics of this IC.  
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Operational Notes – continued  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Functional Safety  
“ISO 26262 Process Compliant to Support ASIL-*”  
A product that has been developed based on an ISO 26262 design process compliant to the ASIL level described in  
the datasheet.  
“Safety Mechanism is Implemented to Support Functional Safety (ASIL-*)”  
A product that has implemented safety mechanism to meet ASIL level requirements described in the datasheet.  
“Functional Safety Supportive Automotive Products”  
A product that has been developed for automotive use and is capable of supporting safety analysis with regard to the  
functional safety.  
Note: “ASIL-*” is stands for the ratings of “ASIL-A”, “-B”, “-C” or “-D” specified by each product's datasheet.  
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BD52WxxG-C  
Ordering Information  
B
D
5
2
W
x
x
G
-
C
T
R
UVDET OVDET  
Package  
G: SSOP6  
Product Rank  
C: for Automotive  
Packaging and forming  
specification  
TR: Embossed tape and reel  
01: 1.08 V  
02: 1.35 V  
03: 1.62 V  
04: 2.25 V  
05: 2.97 V  
06: 4.50 V  
1.32 V  
1.65 V  
1.98 V  
2.75 V  
3.63 V  
5.50 V  
Lineup  
Orderable Part  
Number  
UVDET  
OVDET  
Marking  
Package  
1.08 V  
1.35 V  
1.62 V  
2.25 V  
2.97 V  
4.50 V  
1.32 V  
1.65 V  
1.98 V  
2.75 V  
3.63 V  
5.50 V  
BT  
BU  
BV  
BW  
BX  
GC  
BD52W01G-CTR  
BD52W02G-CTR  
BD52W03G-CTR  
SSOP6  
Reel of 3000  
BD52W04G-CTR  
BD52W05G-CTR  
BD52W06G-CTR  
Marking Diagram  
SSOP6 (TOP VIEW)  
Part Number Marking  
LOT Number  
Pin 1 Mark  
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BD52WxxG-C  
Physical Dimension and Packing Information  
Package Name  
SSOP6  
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19/20  
BD52WxxG-C  
Revision History  
Date  
Revision  
Changes  
26.Dec.2019  
17.May.2021  
001  
002  
New Release  
Add Lineup  
Added BD52W02G-C and BD52W04G-C in the line-up,  
added Nano Energy™ trademark  
05.Nov.2021  
003  
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Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (Specific Applications), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHMs Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PAA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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