BD87007FJ [ROHM]

BD87007FJ是用于二次侧输出端的同步整流型控制器。内置低功耗高精度分流稳压器,可减少待机功耗。另外,在连续模式工作时,无需输入一次侧的开关同步信号即可工作,更加节省空间。工作电源电压宽达2.7V~32.0V,可支持各种输出的应用。另外,采用高耐压120V(Max)工艺,可直接监测漏极电压。;
BD87007FJ
型号: BD87007FJ
厂家: ROHM    ROHM
描述:

BD87007FJ是用于二次侧输出端的同步整流型控制器。内置低功耗高精度分流稳压器,可减少待机功耗。另外,在连续模式工作时,无需输入一次侧的开关同步信号即可工作,更加节省空间。工作电源电压宽达2.7V~32.0V,可支持各种输出的应用。另外,采用高耐压120V(Max)工艺,可直接监测漏极电压。

开关 控制器 稳压器
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中文:  中文翻译
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Datasheet  
Built-in Low Consumption and High Accuracy Shunt Regulator  
High Efficiency, Low Standby Power and  
CCM Corresponding  
Secondary Side Synchronous Rectification  
Controller IC  
BD87007FJ  
General Description  
Key Specifications  
BD87007FJ is synchronous rectification controller to be  
used in the secondary side output. It has a built-in low  
consumption and high accuracy shunt regulator, which  
reduces standby power. At continuous conduction mode  
(CCM) operation, further space saving can be realized  
when operating without the input switching synchronizing  
signal of the primary side.  
Supply Voltage  
Circuit Current (No Switching):  
DRAIN Monitor Pin Absolute Voltage: 120 V (Max)  
Operating Temperature Range: -40 °C to +105 °C  
2.7 V to 32.0 V  
800 µA (Typ)  
Package  
W(Typ) x D(Typ) x H(Max)  
4.90 mm x 6.00 mm x 1.65 mm  
SOP-J8  
BD87007FJ also features a wide operating supply  
voltage of 2.7 V to 32.0 V for various output applications.  
In addition, by adopting the high voltage 120 V (Max)  
process, it is possible to monitor the drain voltage  
directly.  
Features  
Built-in Low Consumption and High Accuracy Shunt  
Regulator, which Reduces Standby Power  
120 V (Max) High Voltage Process DRAIN Monitor  
Pin  
Wide Supply Voltage Range of 2.7 V to 32.0 V  
Supports Drive Type: PWM, QR Controller etc.  
No Input Required on the Primary-Side at CCM  
Built-in Over Voltage Protection for SH_IN and VCC  
Pin  
Applications  
AC/DC Output Power Conversion Applications:  
Charger, Adapter, Household Appliance, etc.  
Built-in Thermal Shutdown Function  
Typical Application Circuits  
VOUT  
CVCC  
RDRAIN1  
DRAIN  
RDRAIN2  
VCC  
D1  
LFB  
SR_GND  
SH_IN  
Primary  
Controler  
+
COUT  
GATE  
SH_OUT  
NC  
-
R1 C1  
MAX_TON  
RMAX_TON  
GND  
M1  
Flyback Application Circuit (Low side FET)  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
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BD87007FJ  
Pin Configuration  
(TOP VIEW)  
VCC  
SH_IN  
DRAIN  
SR_GND  
SH_OUT  
GATE  
MAX_TON  
NC  
Pin Description  
Pin No.  
Pin Name  
VCC  
Function  
1
2
3
4
5
6
7
8
Power supply input pin  
SH_IN  
Shunt regulator reference input pin  
Shunt regulator power supply input / output pin  
Non connection (Do not connect this pin to any potential and keep it open.)  
Set maximum on time pin  
SH_OUT  
NC  
MAX_TON  
GATE  
Secondary side FET GATE drive pin  
GND pin  
SR_GND  
DRAIN  
Secondary side FET DRAIN monitor pin  
Block Diagram  
VOUT  
+
-
GND  
Primary  
Side  
Controller  
SHUNT  
LDO BLOCK  
REGULATOR  
-
+
DRAIN COMP  
-
0.800 V  
(Typ)  
+
PROTECTION BLOCK  
SH_IN_OVP  
VCC_OVP  
Timer  
Auto  
Restart  
VCC x 1.4  
(Typ)  
SET COMP  
-
TSD  
S
Q
+
-100 mV  
(Typ)  
R
MAX_TON  
MAX_TON  
BLOCK  
RESET COMP  
+
-
Compulsion  
OFF Time  
-6 mV  
(Typ)  
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BD87007FJ  
Description of Block  
1. SET COMP Block  
Monitors the DRAIN pin voltage, and outputs a signal to turn on the FET if the DRAIN pin voltage is -100 mV (Typ) or  
less.  
2. RESET COMP Block  
Monitors the DRAIN pin voltage, and outputs a signal to turn off the FET if the DRAIN pin voltage is -6 mV (Typ) or more.  
3. Compulsion OFF Time Block  
When the FET is turned OFF due to RESET COMP detection, resonance waveforms appear on the DRAIN pin. To  
prevent the resonance waveforms from turning on the FET, an OFF state should be forced for a certain time.  
Operation sequence of each block is shown on the figure below.  
VOUT  
Secondary Side  
0 V  
-6 mV  
-100 mV  
-6 mV  
-6 mV  
-100 mV  
-6 mV  
DRAIN  
-100 mV  
-100 mV  
0 V  
0 V  
SET COMP  
ON  
ON  
RESET  
RESET  
RESET COMP  
OFF  
ON  
ON  
Secondary side0 V  
GATE  
Compulsion  
OFF Time  
0 V  
OFF  
Time  
OFF  
Time  
Figure 1. Operation Sequence  
About Maximum Input Frequency  
The Maximum Operating Frequency of the IC depends on the Compulsion OFF Time. For example, BD87007FJ  
Compulsion OFF Time is equal to 3.850 μs. Considering a variation of 9.09 %, the maximum input frequency is given by  
the following:  
1
푀퐴푋  
=
≈ 2ꢀꢁ  
[kHz]  
(
)
3.850 µ푠 ×1.0909  
However, because the frequency largely fluctuates depending on the input voltage, load conditions, etc., it will be  
different for each application.  
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Description of Block continued  
4. MAX_TON Block  
MAX_TON block sets the maximum ON time. It starts the counting when the DRAIN pin voltage is on the rising edge of  
the output voltage VCC x 1.4 V (Typ) or more. In addition, the FET will be forced OFF after the set time has elapsed.  
The relationship between the resistance value (RMAX_TON) and set time (tMAX_ON) is described as follows:  
푀퐴푋_푇푂푁 [ꢂs] × ꢃꢄ [kΩ/ꢂs] = 푅푀퐴푋_푇푂푁 [kΩ]  
Calculation Example:  
If you want to set the maximum ON time to 10 µs, the value of RMAX_TON is as follows:  
ꢃꢄ [ꢂs] × ꢃꢄ [kΩ/ꢂs] = ꢃꢄꢄ [kΩ]  
However, the formula above is for an ideal approximation only. It is strongly advised that the operation of the actual  
application should be verified.  
By setting this time, it becomes possible to prevent the simultaneous ON operation of the primary side and the  
secondary side in CCM.  
The drive sequence in CCM operation is shown in the figure below:  
VOUT  
(1)  
(1)  
(3)  
+
-
I2  
VF  
VG1  
0 V  
I1  
GND  
LFB  
RDRAIN2  
VG1  
VG2  
Primary  
Side  
Controller  
I1  
RDRAIN1  
D1  
0 A  
0 A  
VDS2  
I2  
LDO BLOCK  
VCC x 1.4  
DRAIN COMP  
-
+
VCC x 1.4  
(Typ)  
0 V  
0 V  
VDS2  
-
SET COMP  
-100mV  
-100 mV  
C1 R1  
S
Q
+
-VF  
(6)  
-100 mV  
(Typ)  
(4)  
R
MAX_TON  
MAX_TON  
BLOCK  
VG2  
RMAX_TON  
tMAX_ON  
tMAX_ON  
MAX_TON  
timer  
RESET COMP  
+
-
Compulsion  
OFF Time  
(2)  
-6 mV  
(Typ)  
(5)  
Period allotted for VG1 and VG2  
to avoid concurrent ON state  
at CCM.  
Figure 2. The Drive Sequence in CCM Operation  
(1) Primary side FET = ON. Current I1 flows to the primary side FET. Secondary side drain voltage VDS2 rises.  
(2) The VDS2 = VCC x 1.4 detects the rise edge of the threshold, MAX_TON timer start.  
(3) Primary side FET = OFF. Current I2 flows through the Body Diode of the secondary side FET (OFF state).  
(4) Secondary side drain voltage VDS2 -100 mV by current I2, Secondary side FET = ON.  
(5) Elapsed the set time in the MAX_TON pin, the secondary side FET = compulsion OFF.  
(6) Since the I2 current flows through the Body Diode, VF voltage occurs.  
In order to reduce the influence of the switching noise as much as possible, capacitor C1 and resistor R1 in series should  
be connected to the MAX_TON pin. It is recommended that the capacitance be about 1000 pF and the resistance value  
be about 1 kΩ. This also serves as phase compensation of the MAX_TON pin and therefore should be connected.  
For quasi-resonance (QR) application, this function is unnecessary because it basically does not operate in CCM. At  
this time, the setting method of the MAX_TON pin is invalidated by setting RMAX_TON which is sufficiently large (300 or  
less) so that the minimum time of one period on the primary side including variation etc. << MAX_TON timer setting  
time.  
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Description of Block continued  
5. SHUNT REGULATOR Block  
It is a low consumption, high accuracy shunt regulator that controls the AC/DC output voltage.  
6. PROTECTION Block  
When protection is detected, the timer starts counting. After completion, drive the photo coupler from the SH_OUT pin to  
stop the primary side drive operation.  
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BD87007FJ  
Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Symbol  
Rating  
Unit  
V
VCC Input Pin  
VMAX_VCC  
-0.3 to +40  
MAX_TON Output Pin  
SH_IN Input Pin  
VMAX_MAX_TON  
VMAX_SH_IN  
VMAX_SH_OUT  
VMAX_GATE  
VMAX_DRAIN  
Tjmax  
-0.3 to +VMAX_VCC  
-0.3 to +40  
V
V
V
V
SH_OUT Input / Output Pin  
Gate Output Pin  
-0.3 to +40  
-0.3 to +15.5  
+120 (Note 1)  
Drain Input Pin  
V
Maximum Junction Temperature  
+150  
°C  
Storage Temperature Range  
Tstg  
-55 to +150  
°C  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by  
increasing board size and copper area so as not to exceed the maximum junction temperature rating.  
(Note 1) When a negative voltage is applied, current flows through the ESD protection device. This current value is about 6 mA or less and will require a current  
limiting resistor to the DRAIN pin.  
Thermal Resistance (Note 2)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s (Note 4)  
2s2p (Note 5)  
SOP-J8  
Junction to Ambient  
Junction to Top Characterization Parameter (Note 3)  
θJA  
149.3  
18  
76.9  
11  
°C/W  
°C/W  
ΨJT  
(Note 2) Based on JESD51-2A(Still-Air)  
(Note 3) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside  
surface of the component package.  
(Note 4) Using a PCB board based on JESD51-3.  
(Note 5) Using a PCB board based on JESD51-7.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3 mm x 76.2 mm x 1.57 mmt  
Top  
Copper Pattern  
Thickness  
70 µm  
Footprints and Traces  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
114.3 mm x 76.2 mm x 1.6 mmt  
2 Internal Layers  
4 Layers  
Top  
Copper Pattern  
Bottom  
Copper Pattern  
74.2 mm x 74.2 mm  
Thickness  
70 µm  
Copper Pattern  
Thickness  
35 µm  
Thickness  
70 µm  
Footprints and Traces  
74.2 mm x 74.2 mm  
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BD87007FJ  
Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
VCC  
Topr  
2.7  
-40  
56  
20.0  
+25  
-
32.0  
+105  
300  
V
Supply Voltage  
°C  
kΩ  
kΩ  
pF  
Operating Temperature  
MAX_TON RMAX_TON Resistor Range  
RMAX_TON  
R1  
MAX_TON R1  
MAX_TON C1  
0.5  
680  
1.0  
2.0  
C1  
1000  
2200  
Electrical Characteristics (Unless otherwise specified VCC =20 V, VSH_OUT = 20 V, Ta = 25 °C)  
Parameter  
Circuit Current  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
fSW = 50 kHz at Switching Mode  
(GATE = OPEN)  
Circuit Current1  
ION  
0.5  
1.0  
2.0  
mA  
Circuit Current2  
IACT  
IOFF  
350  
18  
800  
35  
1400  
60  
µA  
µA  
Switching Stop Mode  
Circuit Current3  
VCC = 1.9 V, UVLO Mode  
VCC Item  
VCC UVLO Threshold Voltage1  
VCC UVLO Threshold Voltage2  
VCC OVP Detection Voltage1  
VCC OVP Detection Voltage2  
SR Controller BLOCK  
GATE Turn ON Threshold Voltage  
GATE Turn OFF Threshold Voltage  
Compulsion OFF Time  
MAX_TON BLOCK  
VUVLO1  
VUVLO2  
VOVP1  
VOVP2  
2.00  
1.95  
32.5  
31.5  
2.30  
2.25  
35.0  
34.0  
2.65  
2.60  
37.5  
36.5  
V
V
V
V
VCC Sweep Up  
VCC Sweep Down  
VCC Sweep Up  
VCC Sweep Down  
VGON  
VGOFF  
tCOFF  
-150  
-10  
-100  
-6  
-50  
-1  
mV  
mV  
µs  
VDRAIN = +300 mV to -300 mV  
VDRAIN = -300 mV to +300 mV  
3.50  
3.85  
4.20  
MAX_TON Timer Start Threshold  
Voltage  
VCC = 20 V  
Pulse Input to DRAIN Pin  
VMAX_ON_START  
24  
28  
32  
V
RMAX_TON = 100 kΩ  
VCC = 3 V  
VDRAIN = -0.3 V↔+7 V  
MAX_TON Timer  
tMAX_ON  
9.4  
10.0  
0.40  
10.6  
0.56  
µs  
V
MAX_TON Output Voltage  
Drain Monitor BLOCK  
VMAX_ON  
0.24  
Drain Pin Sink Current  
ID_SINK  
130  
-23  
270  
-11  
550  
-5  
µA  
µA  
µA  
VDRAIN = 120 V  
VDRAIN = 0.1 V  
VDRAIN = -0.2 V  
Drain Pin Source Current1  
Drain Pin Source Current2  
Driver BLOCK  
IDRAIN_SO1  
IDRAIN_SO2  
-3.0  
-1.0  
-0.3  
GATE Pin High Voltage  
VGATE_H1  
RHIONR1  
11  
12.0  
6.0  
4.0  
1.1  
0.9  
-
12  
23.0  
12.0  
9.0  
14  
50.0  
24.0  
18.0  
4.4  
3.6  
-
V
Ω
VCC = 20 V  
High Side FET ON-Resistance1  
High Side FET ON-Resistance2  
High Side FET ON-Resistance3  
Low Side FET ON-Resistance1  
Low Side FET ON-Resistance2  
Delay Time GATE Pin Turn ON  
Delay Time GATE Pin Turn OFF  
VCC = 2.7 V, IOUT = -10 mA  
VCC = 5.0 V, IOUT = -10 mA  
VCC = 10 V, IOUT = -10 mA  
VCC = 2.7 V, IOUT = +10 mA  
VCC = 5.0 V, IOUT = +10 mA  
VDRAIN = +300 mV to -300 mV  
VDRAIN = -300 mV to +300 mV  
RHIONR2  
Ω
RHIONR3  
Ω
RLOWONR1  
RLOWONR2  
tDELAY_ON  
tDELAY_OFF  
2.2  
Ω
1.8  
Ω
50  
ns  
ns  
-
100  
-
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Electrical Characteristics - continued  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Shunt Regulator BLOCK  
VSH_OUT = 5 V  
SH_OUT Sink Current = 100 µA  
VSH_OUT = 5 V  
SH_OUT Sink Current = 100 µA  
Ta = +25 °C to +105 °C  
VSH_OUT = 2.7 V to 5 V  
Reference Voltage  
VSHREF  
VSHEMP  
VSHREF1  
0.792 0.800 0.808  
V
Reference Voltage  
Changing Ratio by Temperature  
-
-
-8  
1
-
-
mV  
mV  
SH_OUT Coefficient  
of the Reference Voltage1  
SH_OUT Sink Current = 100 µA  
SH_OUT Coefficient  
of the Reference Voltage2  
VSH_OUT = 5 V to 20 V  
SH_OUT Sink Current = 100 µA  
VSHREF2  
-
2
-
mV  
µA  
Reference Input Current  
ISH_IN  
-0.2  
0.0  
+0.2  
VSH_IN = 2 V  
SH_OUT Sink Current  
= 100 µA to 300 µA  
(VSH_OUT = 2.7 V)  
SH_OUT Sink Current  
= 100 µA to 300 µA  
(VSH_OUT = 20 V)  
Dynamic Impedance1  
RSH_OUT1  
-
-
0.3  
0.2  
-
-
Ω
Ω
Dynamic Impedance2  
RSH_OUT2  
SH_OUT Current at SH_IN = Low  
ISH_OUT  
ISH_OUT_REG  
VSHI_OVP1  
5
10  
-
18  
-
µA  
mA  
V
VSH_IN = 0 V, VSH_OUT = 5 V  
VSH_IN = 0.85 V, VSH_OUT = 5 V  
VSH_IN Sweep Up  
SH_OUT Regulation Current  
SH_IN OVP Detection Voltage1  
SH_IN OVP Detection Voltage2  
Protection Detect Timer  
1
0.90  
0.85  
500  
1.00  
0.95  
900  
1.10  
1.05  
1500  
VSHI_OVP2  
V
VSH_IN Sweep Down  
tPROTECTION  
µs  
SH_OUT Pull Down Current  
at Protection Detect Mode  
IPROTECTION  
1.3  
2.5  
5.0  
mA  
VSH_IN = 0 V, VSH_OUT = 5 V  
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BD87007FJ  
Typical Performance Curves  
(Reference Data)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.4  
Ta = +105 °C  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Ta = +25 °C  
Ta = +105 °C  
Ta = +25 °C  
Ta = -40 °C  
Ta = -40 °C  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0  
Supply Voltage : VCC[V]  
0
5
10  
15  
20  
25  
30  
Supply Voltage : VCC[V]  
Figure 3. Circuit Current2 vs Supply Voltage  
(Switching Stop Mode)  
Figure 4. Circuit Current2 vs Supply Voltage  
(Switching Stop Mode VCC Zoom)  
5000  
4000  
20  
18  
16  
14  
12  
10  
8
Ta = +105 °C  
Ta = +25 °C  
3000  
Ta = +105 °C  
Ta = +25 °C  
2000  
Ta = -40 °C  
Ta = -40 °C  
6
1000  
4
2
0
0
740  
760  
780  
800  
820  
840  
860  
0
5
10  
15  
20  
25  
30  
SH_IN Voltage : VSH_IN [mV]  
SH_OUT Voltage : VSH_OUT[V]  
Figure 5. SH_OUT Current at SH_IN = L vs SH_OUT Voltage  
(VSH_IN = 0 V)  
Figure 6. SH_OUT Regulation Current vs SH_IN Voltage  
(VSH_OUT = 5 V)  
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BD87007FJ  
Typical Performance Curves - continued  
(Reference Data)  
0.820  
0.815  
11.0  
10.8  
10.6  
10.4  
10.2  
10.0  
9.8  
VCC = 20 V  
VSH_OUT = 20 V  
0.810  
0.805  
0.800  
0.795  
0.790  
0.785  
0.780  
VCC = 5 V  
VSH_OUT = 5 V  
VCC = 3 V  
VSH_OUT = 3 V  
9.6  
9.4  
9.2  
9.0  
-40 -20  
0
20  
40  
60  
80 100  
-40 -20  
0
20  
40  
60  
80 100  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 7. Reference Voltage vs Temperature  
(SH_OUT Sink Current = 100 µA)  
Figure 8. MAX_TON Timer vs Temperature  
(RMAX_TON = 100 kΩ, VDRAIN = -0.3 V+7 V)  
0
-1  
-2  
-3  
-4  
-5  
-6  
-7  
-8  
-9  
-90  
-95  
-100  
-105  
-110  
VCC = 20 V  
VCC = 5 V  
VCC = 20 V  
VCC = 5 V  
VCC = 3 V  
VCC = 3 V  
-10  
-40 -20  
0
20  
40  
60  
80 100  
-40 -20  
0
20  
40  
60  
80 100  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 9. GATE Turn On Threshold vs Temperature  
(DRAIN Sweep Down)  
Figure 10. GATE Turn Off Threshold vs Temperature  
(DRAIN Sweep Up)  
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BD87007FJ  
Timing Chart  
The startup sequence is shown below.  
DRAIN  
2.3 V  
VOUT(VCC)  
VCC=2.3 V  
0.4 V  
VCC UVLO  
MAX_TON  
DRAIN  
9COUNT  
GATE  
Figure 11. Startup Sequence  
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TSZ22111 15 001  
BD87007FJ  
Application Examples  
VOUT  
CVCC  
PC1  
RDRAIN2  
LFB  
DRAIN  
VCC  
RFB1  
D1  
RDRAIN1  
SR_GND  
SH_IN  
+
-
COUT  
CFB1  
RFB2  
GATE  
SH_OUT  
NC  
CFB2  
RMAX_TON  
MAX_TON  
R1 C1  
GND  
M1  
Figure 12. Flyback Application Circuit  
(Low Side FET)  
D2  
M1  
VOUT  
LFB  
CVCC  
RFB1  
PC1  
CFB1 RFB3  
DRAIN  
VCC  
+
-
COUT  
SR_GND  
SH_IN  
RFB2 CFB2  
GATE  
SH_OUT  
NC  
RMAX_TON  
MAX_TON  
R1 C1  
GND  
Figure 13. Flyback Application Circuit  
(High Side FET)  
The built-in shunt regulator block is connected in the IC with SR_GND of the synchronous rectification controller. Therefore,  
do not use the shunt regulator for high side FET type flyback application. Connect the SH_IN pin to the SR_GND pin. Set the  
SH_OUT pin open.  
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TSZ22111 15 001  
BD87007FJ  
Selection of Components Externally Connected  
1. MAX_TON Pin Setting  
A resistance value which is connected to the MAX_TON pin is used to set the timer to force the GATE output OFF. (For  
detailed operation, please see "Description of Block Operation / MAX_TON Block")  
Set timer is proportional to the resistance value which can be set in the range of 56 kΩ to 300 kΩ. This IC is capable of  
an accuracy of 10 μs ±6 % at 100 . However, accuracy deteriorates as the resistance value gets further away from  
100 kΩ. For example, 5.6 µs ±0.9 µs at 56 kΩ, 30 µs ±4.5 µs at 300 kΩ. (See graph below)  
tP  
34.5  
30.0  
25.5  
Jitter  
G1  
G2  
Set the MAX_TON timer so that  
the FET of the primary side (G1)  
and the secondary side (G2) is not  
simultaneously ON.  
10.6  
10.0  
9.4  
tMAX_ON  
6.5  
5.6  
4.7  
MAX_TON  
timer  
56  
100  
300  
MAX_TON Resistor (RMAX_TON) [kΩ]  
Figure 15. Primary FET and Secondary FET Sequence  
at CCM  
Figure 14. MAX_TON Timer vs MAX_TON Resistor  
To prevent destruction due to surge current in CCM, set the MAX_TON timer before turning on the primary side FET  
(G1) to forcibly OFF the secondary side FET (G2). Including such variations, select a resistance value of the MAX_TON  
pin (RMAX_TON) so that the MAX_ON timer setting time is less than one cycle in the primary side (tP > tMAX_ON).  
10×10  
푀퐴푋_푇푂푁  
<
[kΩ]  
ꢆ1+훥ꢇ  
+훥ꢍ+훥ꢎ  
ꢏ×ꢆꢎ  
+ꢎ  
ꢈꢉꢊ_ꢋꢌ  
ꢈꢉꢊ  
ꢈꢉꢊ  
퐽퐼ꢐꢐ퐸ꢑ  
Frequency Variation Ratio  
Maximum Frequency Value  
where:  
fMAX is the primary side of the maximum frequency [kHz]  
fMAX is the primary side of the maximum frequency accuracy [%]  
fJITTER is the primary side of the jitter frequency [kHz]  
tMAX_ON is Secondary side MAX_TON timer time accuracy [%]  
R is Secondary side MAX_TON When the connection resistance accuracy [%]  
2. Calculation Example  
10×10  
푀퐴푋_푇푂푁  
<
= ꢁ2.ꢒ7  
) ( )  
1+0.06+0.01+0.05 × 100+8  
[kΩ]  
(
fMAX is the primary side of the maximum frequency 100[kHz]  
fMAX is the primary side of the maximum frequency accuracy 5[%]  
fJITTER is the primary side of the jitter frequency 8[kHz]  
tMAX_ON is Secondary side MAX_TON timer time accuracy 6[%]  
R is Secondary side MAX_TON When the connection resistance accuracy 1[%]  
With these conditions, MAX_TON Resistor (RMAX_TON) should be set to 82 kΩ or less. In addition, it is recommended that  
the temperature characteristics of each component should also be taken into account.  
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TSZ22111 15 001  
BD87007FJ  
I/O Equivalence Circuits  
Pin 1: VCC / Pin 6: GATE / Pin 7: SR_GND  
Pin 8: DRAIN  
Internal  
REG  
8.DRAIN  
1.VCC  
SR  
6.GATE  
block  
7.SR_GND  
7.SR_GND  
Pin 2: SH_IN / Pin 3: SH_OUT  
Pin 5: MAX_TON  
1.VCC  
Internal  
REG  
3.SH_OUT  
2.SH_IN  
7.SR_GND  
5.MAX_TON  
7.SR_GND  
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BD87007FJ  
Notes on the Layout  
VOUT  
(1)  
(5)  
CVCC  
PC1  
(6)  
(2)  
DRAIN  
VCC  
RFB1  
SH_IN  
SR_GND  
+
-
COUT  
CFB1  
RFB2  
GATE  
SH_OUT  
NC  
CFB2  
RMAX_TON  
MAX_TON  
(5)  
R1  
C1  
M1  
(3)  
LFB  
(8)  
GND  
Rsnb  
Csnb  
(7)  
(4)  
Figure 16. Flyback Application Circuit  
(Low Side FET)  
(1) VCC line may malfunction under the influence of switching noise.  
Therefore, it is recommended to insert a capacitor CVCC between the VCC and SR_GND pin.  
(2) The SH_IN pin is a high impedance line. To avoid crosstalk, electrical wiring should be as short as possible and not in  
parallel with the switching line.  
(3) The MAX_TON pin has a 0.4 V output. Therefore, there is a possibility that compulsion OFF time is affected by the  
switching operation. We recommend connecting RMAX_TON, R1, C1 just before the MAX_TON pin output as much as  
possible and connecting to the SR_GND pin with independent wiring. It is also recommended to use an independent  
electrical wiring in connection with the SR_GND pin.  
(4) The synchronous rectification controller IC must accurately monitor the VDS generated in the FET. Accordingly, the  
electrical wiring between the DRAIN to DRAIN and SR_GND to SOURCE of the IC and FET respectively should be  
connected independently.  
(5) The feedback resistors of VOUT are recommended to be connected to the GND of the output with an independent  
electrical wiring.  
(6) The DRAIN pin is a switching line. Use a narrow wiring and connect as short as possible.  
(7) Use an independent wiring if connecting a snubber circuit between the DS of the FET. The connection of the  
transformer output and the SOURCE of the FET should be thick and short as possible.  
(8) Due to the DRAIN pin detects the small voltage, a malfunction which the switch turns ON/OFF caused by the surge  
voltage may occur. So that, the filters such as the ferrite bead are recommended for alleviating the surge voltage.  
Select LFB with high impedance type in the frequency range (1 MHz to 10 MHz). If the ferrite bead is unnecessary, short  
the wiring.  
Configuration example(Note 6)  
:
D1 (a schottky barrier diode): RB751VM-40 (ROHM)  
RDRAIN1 (a filter resistor for the FET turn off): 0.3 kΩ to 2 kΩ  
RDRAIN2 (a current limiting resistor to the DRAIN pin): 150 Ω  
(Note 6) The value is not a guaranteed value, but for reference. Please choose the optimum values of the components after sufficient evaluations based  
on the actual application.  
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TSZ22111 15 001  
BD87007FJ  
Operational Notes  
1. Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power  
supply pins.  
2. Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at  
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
3. Ground Voltage  
Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a  
voltage below that of the ground pin at any time, even during transient condition.  
4. Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5. Recommended Operating Conditions  
The function and operation of the IC are guaranteed within the range specified by the recommended operating  
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical  
characteristics.  
6. Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power  
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and  
routing of connections.  
7. Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may  
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply  
should always be turned off completely before connecting or removing it from the test setup during the inspection  
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during  
transport and storage.  
8. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
9. Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small  
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and  
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the  
power supply or ground line.  
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TSZ22111 15 001  
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BD87007FJ  
Operational Notes continued  
10. Regarding the Input Pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
P+  
N
P+  
P
P+  
N
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
P Substrate  
GND GND  
P Substrate  
GND  
GND  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
Figure 17. Example of Monolithic IC Structure  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Thermal Shutdown Circuit (TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always  
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj  
falls below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from  
heat damage.  
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BD87007FJ  
Ordering Information  
B D 8 7 0 0 7 F J  
-
E 2  
Package  
FJ:  
SOP-J8  
Part Number  
Packaging and forming specification  
E2: Embossed tape and reel  
Marking Diagram  
SOP-J8 (TOP VIEW)  
Part Number Marking  
LOT Number  
8 7 0 0 7  
Pin 1 Mark  
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BD87007FJ  
Physical Dimension and Packing Information  
Package Name  
SOP-J8  
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BD87007FJ  
Revision History  
Date  
Revision  
001  
Changes  
11.Jul.2019  
New Release  
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20/20  
TSZ22111 15 001  
Notice  
Precaution on using ROHM Products  
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,  
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you  
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport  
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car  
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or  
serious damage to property (Specific Applications), please consult with the ROHM sales representative in advance.  
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any  
damages, expenses or losses incurred by you or third parties arising from the use of any ROHMs Products for Specific  
Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are designed and manufactured for use under standard conditions and not under any special or  
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any  
special or extraordinary environments or conditions. If you intend to use our Products under any special or  
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of  
product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PGA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PGA-E  
Rev.004  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  

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BD87581YG-C

BD87581YG-C是输入输出Rail-to-Rail的CMOS运算放大器。具有宽动作电压范围4V~14V、以及高转换速率、低输入偏置电流等特点,尤其适用于传感器放大器、发动机控制单元、EPS、ABS等所有车载用途。并且,EMI耐受力具有优势,便于替换现有产品以及进行EMI设计。
ROHM

BD87582YFVM-C

BD87582YFVM-C是输入输出轨到轨的CMOS运算放大器。具有4V~14V的大动作电压范围、以及高转换速率、低输入偏置电流等特点,尤其适用于传感器放大器、发动机控制单元、EPS、ABS等各种车载用途。并且,EMI耐受力具有优势,便于替换现有产品以及进行EMI设计。
ROHM

BD87584YFV-C

BD87584YFV-C是一款输入输出轨到轨CMOS运算放大器。具有4V~14V的宽工作电压范围、高压摆率、低输入偏置电流等特点,尤其适用于传感器放大器、引擎控制单元、EPS、ABS等各种车载应用。不仅如此,还具有出色的抗EMI性能,可轻松替换现有产品,EMI设计也更容易。
ROHM

BD876

TRANSISTOR | BJT | DARLINGTON | PNP | 45V V(BR)CEO | 1A I(C) | TO-126
ETC

BD877

NPN SILICON PLANAR DARLINGTON TRANSISTORS
INFINEON

BD878

TRANSISTOR | BJT | DARLINGTON | PNP | 60V V(BR)CEO | 1A I(C) | TO-126
ETC

BD879

NPN SILICON PLANAR DARLINGTON TRANSISTORS
INFINEON

BD87A28FVM

Voltage Detector with Watchdog Timer
ROHM