BD8963EFJE2_技术文档

Datasheet

2.7V to 5.5V, 3A 1ch

Synchronous Buck Converter with

Integrated FET

BD8963EFJ

General Description

Key Specifications

The BD8963EFJ is ROHM's high efficiency step-down

switching regulator designed to produce a voltage as

low as 1.0V from a supply voltage of 5.5V/3.3V. It offers

high efficiency by using synchronous switches and

provides fast transient response to sudden load

changes by implementing current mode control.

 Input Voltage Range:

 Output Voltage Range:

 Average Output Current:

 Switching Frequency:

 Pch FET ON-Resistance:

 Nch FET ON-Resistance:

 Standby Current:

2.7V to 5.5V

1.0V to 2.5V

3.0A (Max)

1MHz (Typ)

145mΩ(Typ)

80mΩ(Typ)

5.0μA (Typ)

 Operating Temperature Range:

-25°C to +85°C

Features

 Fast Transient Response because of Current Mode

Control System

 High Efficiency for All Load Ranges because of

Synchronous Switches

Package

W(Typ) x D(Typ) x H(Max)

 Soft-Start Function

 Thermal Shutdown and UVLO Functions

 Short Circuit Current Protection with Time Delay

Function

 Shutdown Function

Applications

Power Supply for LSI including DSP, Microcomputer

and ASIC

HTSOP-J8

4.90mm x 6.00mm x 1.00mm

Typical Application Circuit

L

V_CC

C_IN

VCC

EN

V_OUT

SW

C_O

ADJ

R2

COMP

GND

R_COMP

R1

C_COMP

Figure 1. Typical Application Circuit

○Product structure：Silicon monolithic integrated circuit ○ This product has no designed protection against radioactive rays

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

1/24

TSZ22111･14･001

Datasheet

BD8963EFJ

Pin Configuration

(TOP VIEW)

COMP

ADJ

N.C

GND

EN

SW

VCC

Figure 2. Pin Configuration

Pin Description

Pin No.

Pin Name

Pin Function

GmAmp output pin/connected to phase compensation capacitor

Ground pin

1

2

3

4

5

6

7

8

COMP

GND

EN

Enable pin (Active High, Open Active)

Power supply input pin

VCC

SW

Power switch node

SW

Power switch node

N.C

No connection

ADJ

Output voltage detection pin

Block Diagram

V_CC

VCC

SW

VCC

GND

Figure 3. Block Diagram

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

2/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Absolute Maximum Ratings

Symbol

Rating

Unit

Parameter

VCC Voltage

V_CC

V_EN

-0.3 to +7 ^{(Note 1)}

-0.3 to +7

0.5 ^{(Note 2)}

3.76 ^{(Note 3)}

-25 to +85

-55 to +150

+150

V

EN Voltage

SW,COMP Voltage

V_SW,V_COMP

Pd1

V

Power Dissipation 1

Power Dissipation 2

Operating Temperature Range

Storage Temperature Range

Maximum Junction Temperature

W

°C

Pd2

Topr

Tstg

Tjmax

(Note 1) Pd should not be exceeded.

(Note 2) Reduce by 4.0mW/°C for Ta above 25°C.

(Note 3) When mounted on a 4-layer 70.0mm x 70.0mm x 1.6mm Glass-epoxy PCB. Reduce by 30.0mW/°C for Ta above 25°C.

Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated

over the absolute maximum ratings.

Recommended Operating Conditions (Ta=-25°C to +85°C )

Limit

Parameter

Symbol

Unit

Min

2.7 ^{(Note 5)}

Typ

Max

5.5

Power Supply Voltage

EN Voltage

V_CC

V_EN

V_OUT

I_SW

5.0

V

A

0

1.0

-

V_CC

Output Voltage Range

SW Average Output Current

2.5 ^{(Note 4)}

3.0 ^{(Note 5)}

(Note 4) In case of setting the output voltage to 1.6V or more, V_CCMin= V_OUT+2.25V

(Note 5) Pd should not be exceeded.

Electrical Characteristics

(Unless otherwise specified , Ta=25°C V_CC=5V,V_EN=V_CC, R₁=20kΩ, R₂=7.5kΩ)

Limit

Parameter

Symbol

Unit

Conditions

EN=GND

Min

Typ

5

Max

20

Standby Current

I_STB

I_CC

-

µA

V

Bias Current

-

350

GND

V_CC

1.25

1

600

0.3

-

EN Low Voltage

V_ENL

V_ENH

I_EN

Standby mode

Active mode

V_EN=5V

EN High Voltage

2.0

-

V

EN Current

10

µA

MHz

Oscillation Frequency

Pch FET ON-Resistance

Nch FET ON-Resistance

ADJ Reference Voltage

COMP Sink Current

COMP Source Current

UVLO Threshold Voltage

UVLO Hysteresis Voltage

Soft Start Time

f_OSC

0.8

-

1.2

290

160

0.812

-

R_ONP

R_ONN

V_ADJ

145

80

mΩ V_CC=5V

V

-

0.788

10

0.800

25

I_COMPSI

I_COMPSO

V_UVLO1

V_UVLO2

t_SS

µA

V

V_ADJ=1.0V

10

25

-

V_ADJ=0.6V

2.400

2.425

0.5

1

2.500

2.550

1

2.600

2.700

2

V_CC=5V to 0V

V_CC=0V to 5V

V

ms

Timer Latch Time

t_LATCH

2

4

Output Short Circuit Threshold

Voltage

V_SCP

-

V_OUTX0.5

V_OUTX0.7

V

V_OUT=1.0V to 0V

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

3/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Typical Performance Curves

[V_OUT=1.1V]

[V_OUT=2.5V]

Ta=25°C

V_CC=5.0V

Ta=25°C

I_O=0A

[V_OUT=1.1V]

Ta=25°C

EN Voltage: V_EN[V]

Input Voltage : V_CC[V]

Figure 5. Output Voltage vs EN Voltage

Figure 4. Output Voltage vs Input Voltage

[V_OUT=1.1V]

V_CC=5.0V

I_O=0A

[V_OUT=2.5V]

V_CC=5V

Ta=25°C

[V_OUT=1.1V]

V_CC=5.0V

Ta=25°C

Temperature: Ta[°C]

Output Current: I_OUT[A]

Figure 6. Output Voltage vs Output Current

Figure 7. Output Voltage vs Temperature

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

4/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Typical Performance Curves - continued

V_CC=5.0V

[V[V_OOUTU=_T=11.1.1VV]]

VV ==55.0.0VV

CCC

TTaa==2255°C°C

Output Current: I_OUT[mA]

Temperature: Ta[°C]

Figure 8. Efficiency vs Output Current

Figure 9. Frequency vs Temperature

V_CC=5.0V

PMOS

NMOS

Temperature: Ta[°C]

Figure 11. EN Voltage vs Temperature

Figure 10. ON-Resistance vs Temperature

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

5/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Typical Performance Curves – continued

Ta=25°C

V_CC=5.0V

Temperature: Ta[°C]

Input Voltage :V_CC[V]

Figure 12. Circuit Current vs Temperature

Figure 13. Frequency vs Input Voltage

www.rohm.com

TSZ22111･15･001

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

6/24

Datasheet

BD8963EFJ

Typical Waveforms

[V_OUT=1.1V]

SW

[V_OUT=1.1V]

EN

V_OUT

V_CC=5.0V

Ta=25°C

I_O=0A

V_CC=5.0V

Ta=25°C

Figure 15. SW Waveform

(Io=10mA)

Figure 14. Soft Start Waveform

[V_OUT=1.1V]

V_OUT

I_OUT

V_CC=5.0V

Ta=25°C

V_CC=5.0V

Ta=25°C

Figure 17. Transient Response

(Io=1.5A to 0.5A , 10µs)

Figure 16. Transient Response

(Io=0.5A to1.5A, 10µs)

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

7/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Application Information

1. Operation

(1) Synchronous Rectifier

Integrated synchronous rectification using two MOSFETs reduces power dissipation and increases efficiency when

compared to converters using external diodes. Internal shoot-through current limiting circuit further reduces power

dissipation.

(2) Current Mode PWM Control

PWM control signal of this IC depends on two feedback loops, the voltage feedback and the inductor current

feedback.

(a) PWM (Pulse Width Modulation) Control

The clock signal coming from OSC has a frequency of 1MHz. When OSC sets the RS latch, the P-Channel

MOSFET is turned ON and the N-Channel MOSFET is turned OFF. The opposite happens when the current

comparator (Current Comp) resets the RS latch i.e. the P-Channel MOSFET is turned OFF and the N-Channel

MOSFET is turned ON. Current Comp's output is a comparison of two signals, the current feedback control

signal "SENSE" which is a voltage proportional to the current I_L, and the voltage feedback control signal, FB.

SENSE

Current

Comp

V_OUT

RESET

R

S

Q

I_L

Level

Shift

FB

SET

Driver

Logic

V_OUT

Gm Amp

SW

Load

OSC

R_COMP

Figure 18. Diagram of Current Mode PWM Control

PV_CC

Current

SENSE

Comp

FB

SET

GND

RESET

SW

I_L

I_L(AVE)

V_OUT

V_OUT(AVE)

Figure 19. PWM Switching Timing Chart

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

8/24

TSZ22111･15･001

Datasheet

BD8963EFJ

2. Description of Functions

(1) Soft-Start Function

During start-up, the soft-start circuit gradually establishes the output voltage to limit the input current. This prevents

the overshoot in the output voltage and inrush current.

(2) Shutdown Function

When EN terminal is “Low”, the device switches to Standby Mode, and all the functional blocks including reference

voltage circuit, internal oscillator and drivers are Turned OFF. Circuit current during standby is 5µA (Typ).

(3) UVLO Function

The UVLO circuit detects whether the supplied input voltage is sufficient to obtain the output voltage of this IC. The

UVLO threshold has a hysteresis of 50mV (Typ) to prevent the output from chattering.

Hysteresis 50mV

V_CC

EN

V_OUT

tss

Soft Start

Standby

Mode

Standby

Mode

Standby Mode

Operating Mode

Standby Mode

UVLO

EN

UVLO

Figure 20. Soft-Start, Shutdown, UVLO Timing Chart

(4) Short Circuit Current Protection with Time Delay Function

To protect the IC from breakdown, the short circuit protection turns the output OFF when the internal current limiter is

activated continuously for a fixed time (t_LATCH) or more. The output that is kept OFF may be turned ON again by

restarting EN or by resetting UVLO.

EN

Output OFF

latch

Output Short Circuit

Threshold Voltage

V_OUT

I_LLimit

IL

t1<t_LATCH

Operating Mode

t2=t_LATCH

Operating Mode

Output OFF

EN

Timer Latch

EN

Figure 21. Short Current Protection Circuit with Time Delay Timing Chart

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

9/24

TSZ22111･15･001

Datasheet

BD8963EFJ

3. Information on Advantages

Advantage 1: Fast Transient Response with Current Mode Control System

BD8963EFJ (Load Response I_O= 0.5A to 1.5A)

Conventional Product (Load response I_O= 0.5A to 1.5A)

V_OUT

36mV

75mV

I_OUT

Voltage drop due to sudden change in load was reduced by about 50%.

Figure 22. Comparison of Transient Response

Advantage 2: High Efficiency for all Load Range Because of its Synchronous Rectifier

For heavier load:

This IC utilizes the synchronous rectifying mode and uses low ON-Resistance

MOSFET power transistors.

100

ON-Resistance of P-Channel MOS FET : 145mΩ(Typ)

ON-Resistance of N-Channel MOS FET : 80mΩ(Typ)

90

80

70

60

50

40

30

20

10

0

【V_OUT=1.1V】

V_CC=5.0V

Ta=25°C

10

100

1000

10000

Output Current : I [mA]

OUTPUT CURREN^OT^U:I^TOUT[mA]

Figure 23. Efficiency

Advantage 3:・Smaller Package due to Integration of Small-Sized Power MOSFETs

・Required output capacitor, Co, for current mode control: 10µF ceramic capacitor

・Required inductance, L, for the operating frequency of 1 MHz: 1.5µH inductor

Reduces the required mounting area

V_CC

15mm

C_IN

R_COMP

L

DC/DC

Convertor

Controller

L

V_OUT

10mm

C_COMP

R_COMP

C_COMP

C_O

CO

Figure 24. Example Application

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

10/24

TSZ22111･15･001

Datasheet

BD8963EFJ

4. Switching Regulator Efficiency

Efficiency η may be expressed by the equation shown below:

V_OUT I_OUT

V_IN I_IN

P

OUT

 

100

100

%

 

P

 Pd

IN

OUT

Efficiency may be improved by reducing the switching regulator power dissipation factors Pdα as follows:

Dissipation Factors:

(1) ON-Resistance Dissipation of Inductor and FET：Pd(I²R)

Pd



I ²R



 I_OUT²

R_COIL R_ON



Where:

R_COILis the DC resistance of inductor

R_ONis the ON-Resistance of FET

I_OUTis the output current

(2) Gate Charge/Discharge Dissipation：Pd(Gate)

Pd



Gate

 C_gs f V ²



Where:

C_gsis the gate capacitance of FET

f is the switching frequency

V is the gate driving voltage of FET

(3) Switching Dissipation：Pd(SW)

V_IN²C_RSS I_OUT f

Pd



SW 



I_DRIVE

Where:

C_RSSis the reverse transfer capacitance of FET

I_DRIVEis the peak current of gate

(4) ESR Dissipation of Capacitor：Pd(ESR)

Pd



ESR  I_RMS₂ ESR



Where:

I_RMSis the ripple current of capacitor

ESR is the equivalent series resistance

(5) Operating Current Dissipation of IC：Pd(IC)

Pd



IC V_IN I_CC



Where:

I_CCis the circuit current

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

11/24

TSZ22111･15･001

Datasheet

BD8963EFJ

5. Considerations on Permissible Dissipation and Heat Generation

Since this IC functions with high efficiency without significant heat generation in most applications, no special

consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including

lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat

generation must be carefully considered.

For dissipation, only conduction losses due to DC resistance of inductor and ON-Resistance of FET are considered.

This is because the conduction losses are most significant among other dissipation factors mentioned above including

gate charge/discharge dissipation and switching dissipation.

4

3

2

1

0

① IC only

θj-a=249.5°C/W

②1 layers（copper foil area:0mm x 0mm）

θj-a=153.2°C/W

③2 layers（copper foil area:15mm x 15mm）

θj-a=113.6°C/W

④2 layers（copper foil area:70mm x 70mm）

θj-a=59.2°C/W

⑤4 layers（copper foil area:70mm x 70mm）

θj-a=33.3°C/W

(when mounted on a board 70mm x 70mm x 1.6mm

Glass-epoxy PCB with thermal Via)

⑤3.76W

④2.11W

③1.10W

②0.82W

①0.50W

P  I_OUT² R_ON

R_ON D R_ONP





1 D R_ONN



D is the ON duty (=V_OUT/V_CC

)

R_COILis the DC Resistance of coil

85

0

25

50

75

100

125

150

R_ONPis the ON-Resistance of P-Channel MOS FET

R_ONNis the ON-Resistance of N-Channel MOS FET

I_OUTis the Output Current

Ambient temperature:Ta [℃]

Figure 25. Thermal Derating Curve

(HTSOP-J8)

Ex.)V_CC=5V, V_OUT=1.1V, R_ONP=0.145Ω, R_ONN=0.08Ω

I_OUT=3A, for example,

D=V_OUT/V_CC=1.1/5=0.22

R_ON=0.22x0.145+(1-0.22)x0.08

=0.0319+0.0624

=0.0943[Ω]

P=3²x0.0943=0.8487[W]

Since R_ONPis greater than R_ONNin this IC, the dissipation increases as the on duty becomes greater. Taking into

consideration the dissipation shown above, thermal design must be carried out with allowable sufficient margin.

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

12/24

TSZ22111･15･001

Datasheet

BD8963EFJ

6. Selection of Externally Connected Components

(1) Selection of Inductor (L)

The inductance significantly depends on output ripple current.

As shown in equation (1), the ripple current decreases as the

inductor and/or switching frequency increases.

I_L

ΔI_L



V_CCV_OUT



V_OUT

V_CC

I_L



A

 

・・・(1)

LV_CC f

I_L

Appropriate ripple current at output should be +/-20% of the

maximum output current.

V_OUT

I_L 0.2 I_OUTMax

A

 

L

・・・(2)

C_O



V_CCV_OUT



V_OUT

・・・(3)

L 

H

 

I_LV_CC f

Figure 26. Output Ripple Current

Where:

ΔI_Lis the Output ripple current, and

f is the Switching frequency

Note: Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which

decreases efficiency. The inductor must be selected to allow a sufficient margin with which the peak current

may not exceed its current rating.

If V_CC=5V, V_OUT=1.1V, f=1MHz, ΔI_L=0.2A x 3A=0.6A, for example, (BD8963EFJ)



5 1.1 1.1

0.651M



L 

1.43



1.5



H



Note: Select the inductor with low resistance component (such as DCR and ACR) to minimize dissipation in the

inductor for better efficiency.

(2) Selection of Output Capacitor (C_O)

Output capacitor should be selected with the consideration on the stability region

and the equivalent series resistance required in smoothing the ripple voltage.

V_CC

Output ripple voltage is determined by equation (4):

V_OUT I_L ESR

[V]

・・・(4)

V_OUT

Where:

L

ESR

Co

ΔI_Lis the Output ripple current, and

ESR is the Equivalent series resistance of output capacitor

Note: Rating of the capacitor should be determined to allow a sufficient margin

against output voltage. A 10µF to 100µF ceramic capacitor is recommended.

Less ESR allows reduction in output ripple voltage.

Figure 27. Output Capacitor

(3) Selection of Input Capacitor (C_IN)

Input capacitor to be selected must be a low ESR capacitor with a capacitance

sufficient to cope with high ripple current to prevent high transient voltage.

The ripple current I_RMSis given by equation (5):

V_CC

C_IN

V_OUT



V_CCV_OUT



・・・(5)

 

A

I_RMS I_OUT



V_OUT

V_CC

L

C_O

< Worst case > I_RMSMax

When V_CCis twice the V_OUT

I_OUT

2

I



,

RMS

If V_CC=5V, V_OUT=1.1V, and I_OUTMax= 3A, (BD8963EFJ)

Figure 28. Input Capacitor

1.1 5 1.1





 1.24

I_RMS 3



A_RMS



5

A low ESR 22µF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better

efficiency.

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

13/24

TSZ22111･15･001

Datasheet

BD8963EFJ

(4) Calculating R_COMP, C_COMPfor Phase Compensation

Since the Current Mode Control is designed to limit the inductor current, a pole (phase lag) appears in the low

frequency area due to CR filter consisting of an output capacitor and a load resistance, while a zero (phase lead)

appears in the high frequency area due to the output capacitor and its ESR. Therefore, the phases are easily

compensated by adding a zero to the power amplifier output with C and R as described below to cancel a pole at the

power amplifier.

1

f_P



fp(Min)

2

 R_OC_O

A

0

1

f_Z



ESR 



fp(Max)

Gain

[dB]

2  ESRC_O

f_Z(ESR)

I_{OUT MIN}

I_{OUT MAX}

Pole at Power Amplifier

When the output current decreases, the load resistance Ro

increases and the pole frequency decreases.

0

Phase

[deg]

1

-90





fp Min 

[Hz]  withlighterload

2

R_OMaxCO

1





fp Max 

[Hz]  withheavierload

2

R_OMinCO

Figure 29. Open Loop Gain Characteristics

A

f_Z(Amp)

Gain

[dB]

Zero at Power Amplifier

Increasing the capacitance of the output capacitor lowers the

pole frequency while the zero frequency does not change.

(This is because when the capacitance is doubled, the

capacitor ESR is reduced to half.)

0

Phase

[deg]

1

-90

f_Z



Amp 



2  R_COMPC_COMP

Figure 30. Error Amp Phase Compensation Characteristics

C_IN

L

V_CC

VCC

GND

EN

SW

V_OUT

ADJ

R₂

R₁

C_O

COMP

R_COMP

C_COMP

Figure 31. Typical Application

Stable feedback loop may be achieved by canceling the pole fp (Min) produced by the output capacitor and the load

resistance with CR zero correction by the error amplifier.

f_Z



Amp



 fp



Min



1





2  R_COMPC_COMP2  R_{O Max}C_O

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

14/24

TSZ22111･15･001

Datasheet

BD8963EFJ

(5) Setting the Output Voltage

The output voltage V_OUTis determined by the equation (6):

・・・(6)

V_OUT (R₂/ R₁1)V_ADJ

5

6

Where:

L

Output

R₂

V_ADJis the Voltage at ADJ terminal (0.8V Typ)

SW

C_O

The required output voltage may be determined by adjusting R₁and R₂.

Adjustable output voltage range: 1.0V to 2.5V

8

ADJ

R₁

Figure 32. Determination of Output

Voltage

Use 1 kΩ to 100 kΩ resistor for R₁. When using a resistor having a resistance higher than 100 kΩ, check the setup

carefully for ripple voltage etc.

The lower limit of input voltage depends on the output voltage.

Basically, it is recommended to use the given condition:

4.7

4.2

3.7

3.2

2.7

V_CCMinV_OUT 2.25V

V_O=2.5V

Figure 33. shows the necessary output current value at the lower

limit of input voltage. (DCR of inductor: 0.05Ω)

These data show characteristic value of the IC. It doesn’t

guarantee the operating range.

V_O=2.0V

V_O=1.5V

V_O=1.8V

0

0.5

1

1.5

2

2.5

3

O_Ou_Ut_Tp_Pu_UTt_CC_URu_Rr_Er_Ne_Tn_:t_IO:_UI_T[A][A]

OUT

Figure 33. Minimum Input Voltage in each Output Voltage

www.rohm.com

TSZ22111･15･001

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

15/24

Datasheet

BD8963EFJ

7. BD8963EFJ Cautions on PC Board Layout

V_CC

L₁

5

①

①,③

4

SW

V_OUT

VCC

6

3

2

C₃

①,③

SW

N.C

ADJ

EN

GND

②,④

7

8

②,④

R₂

1

COMP

R₃

C₁

C₂

R₁

⑥

①,③

⑤

Figure 34. Layout Diagram

①

②

③

④

⑤

⑥

To avoid conduction loss, please keep the thick Black lines as short and thick as possible.

Don't place close to the switching current loop.

As close to IC pin as possible.

Keep PCB traces as short as possible.

Use a single point ground structure to connect with Pin2.

As close to R2 and C2 as possible.

Note: HTSOP-J8 (BD8963EFJ) has a thermal PAD on the reverse of the package.

The package thermal performance may be enhanced by bonding the PAD to GND plane which occupies a

large area of PCB.

www.rohm.com

TSZ22111･15･001

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

16/24

Datasheet

BD8963EFJ

Top Silkscreen Overlay

Top Layer

Middle Layer

Bottom Layer

Bottom Silkscreen Overlay

Figure 35. Reference PCB Layout Pattern

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

17/24

TSZ22111･15･001

Datasheet

BD8963EFJ

8. Recommended Components List for above Application

Symbol

L

Part

Coil

Value

1.5µH

Manufacturer

Series

TDK

Kyocera

Murata

Rohm

VLC6045T-1R5N

V_CC-V_OUT>3V

10µF

22µF

CM316X5R106M10A

CM32X5R226M10A

CM316X5R106M10A

GRM18 Series

MCR03 Series

C_IN

C_O

Ceramic Capacitor

V_CC-V_OUT<3V

10µF

V_OUT=1.0V

V_OUT=1.1V

V_OUT=1.2V

V_OUT=1.5V

V_OUT=1.8V

V_OUT=2.5V

V_OUT=1.0V

V_OUT=1.1V

V_OUT=1.2V

V_OUT=1.5V

V_OUT=1.8V

V_OUT=2.5V

330pF

390pF

2kΩ

C_COMP

Ceramic Capacitor

2kΩ

Rohm

2.4kΩ

3.6kΩ

5.6kΩ

Rohm

R_COMP

Resistance

Rohm

Note: The parts list presented above is an example of recommended parts. Although the parts are standard, actual circuit

characteristics should be checked on your application carefully before use. Be sure to allow sufficient margins to

accommodate variations between external devices and this IC when employing the depicted circuit with other circuit

constants modified. Both static and transient characteristics should be considered in establishing these margins.

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

18/24

TSZ22111･15･001

Datasheet

BD8963EFJ

I/O Equivalent Circuit

・SW Pin

・EN Pin

V_CC

1MΩ

1.4MΩ

10kΩ

SW

EN

2.6MΩ

・COMP Pin

・ADJ Pin

V_CC

ADJ

COMP

Figure 36. I/O Equivalent Circuit

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

19/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Operational Notes

1.

2.

Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power

supply pins.

Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the

digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog

block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and

aging on the capacitance value when using electrolytic capacitors.

3.

4.

Ground Voltage

Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.

Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

5.

Thermal Consideration

Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in

deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, increase the board size

and copper area to prevent exceeding the Pd rating.

6.

7.

Recommended Operating Conditions

These conditions represent a range within which the expected characteristics of the IC can be approximately

obtained. The electrical characteristics are guaranteed under the conditions of each parameter.

Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush

current may flow instantaneously due to the internal powering sequence and delays, especially if the IC

has more than one power supply. Therefore, give special consideration to power coupling capacitance,

power wiring, width of ground wiring, and routing of connections.

8.

9.

Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may

subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply

should always be turned off completely before connecting or removing it from the test setup during the inspection

process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during

transport and storage.

10. Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)

and unintentional solder bridge deposited in between pins during assembly to name a few.

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

20/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Operational Notes – continued

11. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small

charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and

cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the

power supply or ground line.

12. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should

be avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

B

E

C

Pin A

B

C

E

P

P⁺

N

P⁺

P

P⁺

N

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Figure 37. Example of monolithic IC structure

13. Thermal Shutdown Circuit(TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction

temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below

the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from

heat damage.

14. Selection of Inductor

It is recommended to use an inductor with a series resistance element (DCR) 0.1Ω or less. Especially, note that use

of a high DCR inductor will cause an inductor loss, resulting in decreased output voltage. Should this condition

continue for a specified period (soft start time + timer latch time), output short circuit protection will be activated and

output will be latched OFF. When using an inductor over 0.1Ω, be careful to ensure adequate margins for variation

between external devices and this IC, including transient as well as static characteristics. Furthermore, in any case, it

is recommended to start up the output with EN after supply voltage is within.

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

21/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Ordering Information

E F

J

B D 8 9 6 3

E 2

Package

EFJ: HTSOP-J8

Packaging and forming specification

E2: Embossed tape and reel

Part Number

Type

Adjustable

(1.0V to 2.5V)

Marking Diagram

HTSOP-J8(TOP VIEW)

Part Number Marking

LOT Number

B D 8 9 6 3

1PIN MARK

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

22/24

TSZ22111･15･001

Datasheet

BD8963EFJ

Physical Dimension Tape and Reel Information

Package Name

HTSOP-J8

www.rohm.com

TSZ22111･15･001

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

23/24

Datasheet

BD8963EFJ

Revision History

Date

Revision

Changes

17.Jan.2012

13.May.2014

02.Oct.2014

001

002

003

New Release

19/24 page I/O Equivalence circuit（EN pin I/O Equivalence Circuit is revised.）

Applied the ROHM Standard Style and improved understandability.

www.rohm.com

TSZ02201-0J3J0AJ00040-1-2

02.Oct.2014 Rev.003

24/24

TSZ22111･15･001

Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

EU

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual

ambient temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice – GE

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

QR code printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,

please consult with ROHM representative in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable

for infringement of any intellectual property rights or other damages arising from use of such information or data.:

2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the information contained in this document.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice – GE

Rev.003


型号：	BD8963EFJE2
厂家：	ROHM
描述：	Synchronous Buck Converter with Integrated FET
文件：	总28页 (文件大小：1897K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BD8963EFJE2 [ROHM]

相关型号：

BD8963EFJ_12

BD8963EFJ_14

BD8964FVM

BD8964FVM-TR

BD8964FVM_12

BD8966FVM

BD8966FVM--TR

BD8966FVM-TR

BD8966FVM_10

BD8966FVM_12

BD8967FVM

BD8967FVM-TR