BD90610UEFJ-C [ROHM]

BD90610UEFJ-C是一款内置高耐压功率MOSFET的开关稳压器,可通过外置电阻灵活设置开关频率。该产品的特点是支持的输入电压范围宽(3.5V ~ 36V,绝对最大额定电压:42V)、工作温度范围宽(-40℃ ~ +125℃),并且可与外部同步输入引脚输入的外部时钟同步工作。本系列产品中的BD90610EFJ-C是为提高生产效率而变更生产线后的型号。在新项目选型时,建议选择该型号。另外,在技术规格书中的保证特性并没有差异。除非另有说明,否则我们还会披露文档和设计模型的 BD90610EFJ-CE2 数据。;
BD90610UEFJ-C
型号: BD90610UEFJ-C
厂家: ROHM    ROHM
描述:

BD90610UEFJ-C是一款内置高耐压功率MOSFET的开关稳压器,可通过外置电阻灵活设置开关频率。该产品的特点是支持的输入电压范围宽(3.5V ~ 36V,绝对最大额定电压:42V)、工作温度范围宽(-40℃ ~ +125℃),并且可与外部同步输入引脚输入的外部时钟同步工作。本系列产品中的BD90610EFJ-C是为提高生产效率而变更生产线后的型号。在新项目选型时,建议选择该型号。另外,在技术规格书中的保证特性并没有差异。除非另有说明,否则我们还会披露文档和设计模型的 BD90610EFJ-CE2 数据。

时钟 开关 生产线 稳压器
文件: 总44页 (文件大小:3832K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Datasheet  
Input Voltage 3.5 V to 36 V  
Output SW Current 4 A / 2.5A / 1.25A  
1ch Step-Down Switching Regulator  
BD906xx-C series  
General Description  
Key Specifications  
BD906xx-C series is a step-down switching regulator  
with integrated POWER MOS FET and have the  
capability to withstand high input voltage, providing a free  
setting function of operating switching frequency with  
external resistor. This switching regulator features a wide  
input voltage range (3.5 V to 36 V, Absolute maximum 42  
V) and operating temperature range (-40 °C to +125 °C).  
Furthermore, an external synchronization input pin  
enables synchronous operation with external clock.  
Input Voltage Range :  
3.5 V to 36 V  
(Initial startup is over 3.9 V)  
0.8 V to VIN  
4 A / 2.5 A / 1.25 A (Max)  
50 kHz to 600 kHz  
Output Voltage Range :  
Output Switch Current :  
Switching Frequency :  
Reference Voltage Accuracy :±2% (-40 °C to +125 °C)  
Shutdown Circuit Current : 0 µA (Typ)  
Operating Temperature Range(Ta) : -40 °C to +125 °C  
Package  
W(Typ) x D(Typ) x H(Max)  
9.395mm x 10.540mm x 2.005mm  
4.90mm x 6.00mm x 1.00mm  
Features  
HRP7  
HTSOP-J8  
AEC-Q100 Qualified (Note 1)  
Integrated Pch POWER MOS FET  
Low Dropout: 100 % ON Duty Cycle  
External Synchronization Function  
Soft Start Function: 1.38 ms (fSW = 500 kHz)  
Current Mode Control  
Over Current Protection  
Low Supply Voltage Error Prevention  
Thermal Shut Down Protection  
Short Circuit Protection  
High power HRP7 package mounted  
Compact and High power HTSOP-J8 package  
mounted  
Load dump up to 42 V.  
HRP7  
HTSOP-J8  
(Note 1 : Grade 1)  
Applications  
Automotive Battery Powered Supplies  
(Cluster Panels, Car Multimedia)  
Industrial / Consumer Supplies  
Other electronic equipment  
Typical Application Circuit  
L1  
PVIN  
SW  
FB  
VC  
VO  
D1  
CO  
R1  
R2  
C2  
VIN  
VIN  
Cbulk  
CIN  
RT  
CRT  
RRT  
VEN / SYNC  
EN / SYNC  
R3  
C1  
GND  
Product structureSilicon monolithic integrated circuit This product has no designed protection against radioactive rays  
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BD906xx-C series  
Lineup  
HRP7  
BD90640HFP-C  
BD90640EFJ-C  
4 A  
BD90620HFP-C  
BD90620EFJ-C  
2.5 A  
-
Product  
Name  
HTSOP-J8  
BD90610EFJ-C  
1.25 A  
Output Switch Current  
Input Maximum Ratings  
42 V  
Input Voltage Range (Note 1)  
POWER MOSFET ON Resistance  
3.5 V to 36 V  
0.16 Ω (Typ)  
6.98 W  
HRP7 (Note 2)  
Power  
Dissipation  
HTSOP-J8 (Note 3)  
3.10 W  
(Note 1) Initial startup is over 3.9 V  
(Note 2) Reduce by 55.8 mW / °C (Above 25°C),  
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /  
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 μm / 35 μm.  
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm )  
(Note 3) Reduce by 24.8 mW / °C (Above 25°C),  
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /  
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 μm / 35 μm.  
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm)  
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BD906xx-C series  
Pin Configuration  
(TOP VIEW)  
(TOP VIEW)  
1. VC  
1. RT  
8. FB  
2. VIN  
3. FB  
7. PVIN  
6. VIN  
5. VC  
2. SW  
4. GND  
5. RT  
FIN  
3. EN / SYNC  
4. GND  
6. SW  
7. EN / SYNC  
HRP7  
HTSOP-J8  
Pin Description  
Pin No.  
Symbol  
Function  
Pin No  
Symbol  
RT  
Function  
Switching Frequency Setting  
Resistor Connection  
1
2
VC  
VIN  
Error Amp Output  
Power Supply Input  
Output Voltage Feedback  
GND  
1
2
3
4
5
6
7
8
SW  
Switching Output  
Enable /  
External Clock Input  
3
FB  
EN / SYNC  
GND  
4
GND  
RT  
GND  
Switching Frequency Setting  
Resistor Connection  
5
VC  
Error Amp Output  
6
SW  
Switching Output  
VIN (Note 1)  
PVIN (Note 1)  
FB  
Power Supply Input  
Power Supply Input  
Output Voltage Feedback  
Enable /  
External Clock Input  
7
EN / SYNC  
-
FIN  
GND  
(Note 1) VIN and PVIN must be shorted.  
HRP7  
HTSOP-J8  
Block Diagram  
PVIN  
7
UVLO  
OCP  
UVLO  
OCP  
VIN  
VIN  
2
UVLO  
OCP  
6
UVLO  
OCP  
VREF  
VREG  
VREF  
VREG  
EN / SYNC  
EN / SYNC  
EN / SYNC  
EN / SYNC  
7
3
SCP_LATCH  
SCP_LATCH  
Current  
Sense  
Current  
Sense  
SCP_  
LATCH  
SCP_  
LATCH  
RT  
RT  
SLOPE  
OSC  
5
SLOPE  
1
OSC  
TSD  
TSD  
OCP  
OCP  
TSD  
TSD  
SCP  
SCP  
CUR  
_COMP  
PWM_LATCH  
S
CUR  
_COMP  
PWM_LATCH  
S
Pch POWER  
MOSFET  
Pch POWER  
MOSFET  
ERROR_AMP  
ERROR_AMP  
FB  
FB  
Q
Q
DRV  
DRV  
+
+
-
R
R
3
8
-
+
+
-
+
+
0.8V  
0.8V  
-
SW  
SW  
6
4
OFF  
OFF  
2
4
EN  
UVLO  
TSD  
EN  
UVLO  
TSD  
GND  
GND  
SOFT_  
START  
SOFT_  
START  
OCP  
OCP  
SCP_LATCH  
SCP_LATCH  
VC  
VC  
1
5
HRP7  
HTSOP-J8  
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Description of Blocks  
1. ERROR_AMP  
The ERROR_AMP block is an error amplifier and its inputs are the reference voltage 0.8 V (Typ) and the FBpin  
voltage. (Refer to recommended examples on p.16 to 17). The output VCpin controls the switching duty, the output  
voltage is set by FBpin with external resistors. Moreover, the external resistor and capacitor are required to COMP pin  
as phase compensation circuit (Refer to phase compensation selection method on p.17 to 18).  
2. SOFT_START  
The function of the SOFT_START block is to prevent the overshoot of the output voltage VO through gradually  
increasing the input of the error amplifier when the power supply turns ON, which also results to the gradual increase of  
the witching duty. The soft start time is set to 1.38 ms (Typ , fSW = 500 kHz).  
The soft start time is changed by setting of the switching frequency. (Refer to p.18)  
3. EN / SYNC  
The IC is in normal operation when the voltage on the “EN / SYNC” pin is more than 2.6 V. The IC is shut down when the  
voltage on the “EN / SYNC” pin is less than 0.8 V. Furthermore, external synchronization is possible when external clock  
are applied to the “EN / SYNC” pin. The switching frequency range of the external synchronization is within ±20 % of the  
switching frequency and is limited by the external resistance connected to the RT pin.  
ex) When RRT is 27 kΩ (f = 500 kHz), the switching frequency range of the external synchronization is 400 kHz to 600  
kHz.  
4. OSC (Oscillator)  
This circuit generates the clock pulses that are input to SLOPE block. The switching frequency is determined by the  
current going through the external resistor RT at constant voltage of ca. 0.8V. The switching frequency can be set in the  
range between 50 kHz to 600 kHz (Refer to p.16 Figure 13). The output of the OSC block send clock signals to  
PWM_LATCH. Moreover the generated pulses of the OSC block are also used as clock of the counter of SS and  
SCP_LATCH blocks.  
5. SLOPE  
This block generates saw tooth waves using the clock generated by the OSC block. The generated saw tooth waves are  
combined with the current sense and sent to the CUR_COMP.  
6. CUR_COMP (Current Comparator)  
The CUR_COMP block compares the signals between the ERROR_AMP and the combined signals from the SLOPE  
block and current sense. The output signals are sent to the PWM_LATCH block.  
7. PWM_LATCH  
The PWM_LATCH block is a LATCH circuit. The OSC block output (set) and CUR_COMP block output (reset) are the  
inputs of this block. The PWM_LATCH block outputs PWM signals.  
8. TSD (Thermal Shut down)  
The TSD block prevents thermal destruction / thermal runaway of the IC by turning OFF the Pch POWER MOSFET  
output when the temperature of the chip reaches more than about 175 °C (Typ). When the chip temperature falls to a  
specified level, the switching will resume. However, since the TSD is designed to protect the IC, the chip temperature  
should be provided with the thermal shutdown detection temperature of less than approximately Tjmax = 150 °C.  
9. OCP (Over Current Protection)  
OCP is activated when the voltage between the drain and source (on-resistance × load current) of the Pch POWER  
MOSFET when it is ON, exceeds the reference voltage which is internally set within the IC. This OCP is a self-return  
type. When OCP is activated, the ON duty will be small, and the output voltage will decrease. However, this protection  
circuit is only effective in preventing destruction from sudden accident. It does not support the continuous operation of  
the protection circuit (e.g. if a load, which significantly exceeds the output current capacitance, is connected).  
10. SCP (Short Circuit Protection) and SCP-LATCH  
While OCP is activated, and if the output voltage falls below 70 %, SCP will be activated. When SCP is active, the output  
will be turned OFF after a period of 1024 pulse. It extends the time that the output is OFF to reduce the average output  
current. In addition, during startup of the IC, this feature is masked until it reaches a certain output voltage to prevent the  
startup failure.  
11. UVLO (Under Voltage Lock-Out)  
UVLO is a protection circuit that prevents low voltage malfunction. It prevents malfunction of the internal circuit from  
sudden rise and fall of power supply voltage. It monitors the VIN power supply voltage and the internal regulator voltage.  
If VIN is less than the threshold voltage 3.24 V (Typ), the Pch POWER MOSFET output is OFF and the soft-start circuit  
will be restarted. This threshold voltage and release voltage have a hysteresis of 280 mV (Typ).  
12. DRV (Driver)  
This circuit drives the gate electrode of the Pch POWER MOSFET output. It reduces the increase of the Pch POWER  
MOSFET’s on-resistance by switching the driving voltage when the power supply voltage drop.  
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Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Input Power Supply Voltage  
EN / SYNC Pin Voltage  
Symbol  
VIN, PVIN  
Rating  
-0.3 to +42  
-0.3 to VIN  
-0.3 to +7  
6.98  
Unit  
V
VEN / SYNC  
V
VRT, VVC, VFB  
V
RT, VC, FB Pin Voltage  
HRP7 (Note2)  
Power Dissipation(Note1)  
Pd  
W
HTSOP-J8 (Note3)  
3.10  
Tstg  
-55 to +150  
150  
Storage Temperature Range  
°C  
°C  
Tjmax  
Maximum Junction Temperature  
(Note 1) Do not however exceed Pd.  
(Note 2) Reduce by 55.8 mW / °C, (Above 25°C),  
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /  
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 µm / 35 µm.  
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm )  
(Note 3) Reduce by 24.8 mW / °C, (Above 25°C),  
(JESD51 -5 / -7 standard FR4 114.3 mm × 76.2 mm × 1.60 mmt 4-layer Top copper foil: ROHM recommended footprint + wiring to measure /  
2,3 inner layers and Copper foil area on the reverse side of PCB 74.2 mm × 74.2 mm, copper (top & reverse side / inner layers) 70 µm / 35 µm.  
Thermal via : pitch 1.2 mm, diameter Φ0.30 mm )  
Caution: Exceeding the absolute maximum rating for supply voltage, operating temperature or other parameters can result in damages to or destruction of the  
chip. In this event it also becomes impossible to determine the cause of the damage (e.g. short circuit, open circuit, etc). Therefore, if any special mode  
is being considered with values expected to exceed the absolute maximum ratings, implementing physical safety measures, such as adding fuses,  
should be considered.  
Recommended Operating Conditions  
Limit  
Parameter  
Symbol  
Unit  
Min  
3.5  
Max  
36  
Operating Power Supply Voltage (Note 1)  
Operating Temperature Range  
VIN, PVIN  
Topr  
V
°C  
A
-40  
+125  
4
BD90640HFP/EFJ-C  
BD90620HFP/EFJ-C  
BD90610EFJ-C  
ISW40  
ISW20  
ISW10  
VO  
-
-
Output Switch Current (Note2)  
2.5  
1.25  
VIN  
-
A
-
A
Output Voltage  
0.8  
250  
50  
V
Min ON Pulse Width  
TON_MIN  
fSW  
ns  
kHz  
kΩ  
kHz  
%
Switching Frequency  
600  
330  
600  
+20  
90  
RRT  
22  
Switching Frequency Set Resistance  
50  
Synchronous Operation Frequency Range  
Synchronous Operation Frequency  
External Clock ON Duty  
fSYNC  
fSYNC_RT  
DSYNC  
CIN  
-20  
10  
%
Capacitance of Input Capacitor  
2.4(Note 3)  
-
µF  
(Note 1) Initial startup is over 3.9 V.  
(Note 2) The Limits include output DC current and output ripple current.  
(Note 3) Ceramic capacitor is recommended. The capacitor value including temperature change, DC bias change, and aging change must be larger than  
minimum value (Refer to p.15). Also, the IC might not function properly when the PCB layout or the position of the capacitor is not good. Please check  
Notes on the PCB Layouton page 30.  
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BD906xx-C series  
Electrical Characteristics (Unless otherwise specified, Ta = - 40 °C to +125 °C, VIN = 13.2 V, VEN / SYNC = 5 V)  
Limit  
Parameter  
Symbol  
Unit  
Conditions  
Min  
Typ  
Max  
Whole chip  
VEN / SYNC = 0 V,  
Ta < 105 °C  
ISDN  
IIN  
-
-
0
5
μA  
Shutdown Circuit Current  
Circuit Current  
2.2  
3.3  
mA  
Io = 0 A, VFB = 2 V  
SW Block  
POWER MOSFET ON Resistance  
RON  
-
0.16  
6.4  
0.32  
Ω
A
A
A
ISW = 30 mA  
BD90640HFP / EFJ-C ISWLIMIT40  
BD90620HFP / EFJ-C ISWLIMIT20  
4.0  
2.5  
1.25  
-
-
-
Operating Output  
Switch Current Of  
Overcurrent  
4.3  
Protection (Note 1)  
BD90610EFJ-C  
ISWLIMIT10  
IOLK  
2.20  
VIN = 36 V,  
VEN / SYNC = 0 V,  
Output Leak Current  
-
0
5
μA  
Ta < 105 °C  
Error Amp Block  
VREF1  
VREF2  
ΔVREF  
IB  
0.792  
0.784  
-
0.800  
0.800  
0.5  
0.808  
0.816  
-
V
V
VVC = VFB, Ta = 25 °C  
VVC = VFB  
Reference Voltage 1  
Reference Voltage 2  
Reference Voltage Input  
Regulation  
%
3.5 V ≤ VIN ≤ 36 V  
Input Bias Current  
VC Sink Current  
-1.0  
-76.5  
31.5  
135  
-
+1.0  
-31.5  
76.5  
540  
μA  
VVC = 1.25 V,  
VFB = 1.3 V  
VVC = 1.25 V,  
VFB = 0.3 V  
IVC = ±10 μA,  
VVC = 1.25 V  
IVCSINK  
IVCSOURCE  
GEA  
-54.0  
54.0  
270  
1.38  
μA  
VC Source Current  
Trans Conductance  
Soft Start Time  
μA  
μA / V  
ms  
TSS  
1.13  
1.63  
RRT = 27 kΩ  
Current Sense Part  
Trans Conductance  
OSC Block  
GCS  
-
5.2  
-
A / V  
fSW  
450  
-
500  
1
550  
-
kHz  
%
RRT = 27 kΩ  
Switching Frequency  
Frequency Input Regulation  
Enable / Sync Input Block  
Threshold Voltage  
SYNC Current  
ΔfSW  
3.5 V ≤ VIN ≤ 36 V  
VEN / SYNC  
IEN / SYNC  
0.8  
-
1.9  
23  
2.6  
50  
V
μA  
VEN / SYNC = 5 V  
UVLO  
UVLO ON Mode Voltage  
UVLO OFF Mode Voltage  
UVLO Hysteresis  
VUVLO_ON  
VUVLO_OFF  
VUVLO_HYS  
-
-
-
3.24  
3.52  
280  
3.50  
3.90  
-
V
V
mV  
(Note 1) The Limit include output DC current and output ripple current.  
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Typical Performance Curves  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
From Top  
Ta = 125 °C  
Ta = 25 °C  
Ta = -40 °C  
From Top  
Ta = 125 °C  
Ta = 25 °C  
Ta = -40 °C  
0
5
10  
15  
20  
25  
30  
35  
40  
0
5
10  
15  
20  
25  
30  
35  
40  
Input Voltage : VIN [V]  
Input Voltage : VIN [V]  
Figure 1. Shutdown Circuit Current vs Input Voltage  
Figure 2. Circuit Current vs Input Voltage  
0.30  
0.25  
0.20  
10  
9
8
7
6
5
4
3
2
1
0
From Top  
BD90640HFP / EFJ-C  
BD90620HFP / EFJ-C  
BD90610EFJ-C  
0.15  
From Top  
VIN = 3.5 V  
VIN = 13.2 V  
0.10  
0.05  
Ta = 25 °C  
0.00  
-40 -20  
0
20 40 60 80 100 120  
0
5
10  
15  
20  
25  
30  
35  
40  
Ambient Temperature : Ta [˚C]  
Input Voltage : VIN [V]  
Figure 3. POWER MOSFET ON Resistance vs  
Ambient Temperature  
Figure 4. Switch Current Limit vs Input Voltage  
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Typical Performance Curves continued  
5.0  
4.0  
3.0  
2.0  
816  
812  
808  
804  
800  
796  
792  
788  
784  
1.0  
VIN = 13.2 V  
VIN = 13.2 V  
0.0  
-40 -20  
0
20 40 60 80 100 120  
-40 -20  
0
20 40 60 80 100 120  
Ambient Temperature : Ta [˚C]  
Ambient Temperature : Ta[˚C]  
Figure 6. Reference Voltage vs Ambient Temperature  
Figure 5. Leak Current vs Ambient Temperature  
1.63  
1.58  
1.53  
1.48  
1.43  
1.38  
1.33  
1.28  
1.23  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
VIN = 13.2 V  
VFB = 0.8 V  
1.18  
1.13  
RRT = 27 kΩ  
-40 -20  
0
20 40 60 80 100 120  
-40 -20  
0
20 40 60 80 100 120  
Ambient Temperature : Ta[˚C]  
Ambient Temperature : Ta [˚C]  
Figure 8. Soft Start Time vs Ambient Temperature  
Figure 7. Input Bias Current vs Ambient Temperature  
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Typical Performance Curves continued  
550  
540  
530  
520  
510  
500  
490  
480  
470  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
VIN = 13.2 V  
460  
RRT = 27 kΩ  
450  
-40 -20  
0
20 40 60 80 100 120  
-40 -20  
0
20  
40  
60  
80 100 120  
Ambient Temperature : Ta [˚C]  
Ambient Temperature : Ta[˚C]  
Figure 10. EN / SYNC Threshold Voltage  
vs Ambient Temperature  
Figure 9. Switching Frequency vs Ambient Temperature  
450  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
400  
From Top  
Ta = 125 °C  
350  
From Top  
VO = 8.8 V  
VO = 5 V  
Ta = 25 °C  
Ta = -40 °C  
300  
VO = 3.3 V  
250  
200  
150  
100  
50  
BD90640HFP / EFJ-C IO<3.79 A  
BD90620HFP / EFJ-C IO<2.29 A  
BD90610EFJ-C IO<1.04 A  
VIN = 13.2 V  
fSW = 500 kHz  
Ta = 25 °C  
0
0
5
10  
EN / SYNC Voltage : VEN / SYNC [V]  
Figure 11. EN / SYNC Current vs EN / SYNC Voltage  
15  
20  
25  
30  
35  
40  
0
1
2
3
Output Current : IO[A]  
Figure 12. Efficiency vs Output Current  
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Timing Chart  
1. Start Up Operation  
VIN  
EN / SYNC  
Threshold Voltage  
EN / SYNC  
SS  
SW  
VO  
Internal slope  
VC  
2. Over Current Protection Operation  
SW  
Normal pulse repetition at  
the following  
Over Current  
Detect Level  
IL  
VO  
FB  
Short Current  
Detect Level  
VC  
*
TSS  
*
Internal SOFT START  
*
*
TOFF TOFF  
TOFF  
TOFF TSS terminal  
,
Output Voltage  
Short to GND  
Output Voltage  
Short Release  
TOFF = 1024 / fSW [s]  
ex) fSW = 500 [kHz] , TOFF = 2.048 [ms]  
tSS = 1.38 [ms] (Typ)  
Auto reset  
(Soft Start Operation)  
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External Synchronization Function  
In order to activate the external synchronization function, connect the frequency-setting resistor to the RT pin and then input  
a synchronizing signal to the EN / SYNC pin.  
The external synchronization operation frequency is limited by the external resistance of RRT pin. The allowable setting limit  
is within ±20 % of the switching frequency.  
ex) When RRT is 27 kΩ (f = 500 kHz), the frequency range of the external synchronization is 400 kHz to 600 kHz.  
Furthermore, the pulse waves LOW voltage should be under 0.8 V and the HIGH voltage over 2.6 V (when the HIGH voltage  
is over 11 V the EN / SYNC input current increases), and the slew rate (rise and fall) under 20 V / µS. The ON Duty of  
External clock should be configured between 10 % and 90 %.  
The frequency will synchronize with the external clock operation frequency after three external sync pulses is sensed.  
L1  
VO  
PVIN  
SW  
FB  
VC  
D1  
CO  
R1  
R2  
C2  
VIN  
VIN  
Cbulk  
CIN  
RT  
CRT  
RRT  
VEN / SYNC  
EN / SYNC  
R3  
C1  
GND  
Eternal SYNC Sample Circuit  
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Selection of Components Externally Connected  
Necessary parameters in designing the power supply are as follows:  
Parameter  
Input Voltage  
Symbol  
VIN  
Specification Case  
6 V to 18 V  
Output Voltage  
VO  
5 V  
Output Ripple Voltage  
Input Range  
ΔVPP  
IO  
20 mVp-p  
Min 1.0 A / Typ 1.5 A / Max 2.0 A  
500 kHz  
Switching Frequency  
Operating Temperature Range  
fSW  
Topr  
-40 °C to +105 °C  
L1  
PVIN  
SW  
FB  
VC  
VO  
D1  
CO  
R1  
R2  
C2  
VIN  
VIN  
Cbulk  
CIN  
RT  
CRT  
RRT  
VEN / SYNC  
EN / SYNC  
R3  
C1  
GND  
Application Sample Circuit  
1. Selection of the inductor L1 value  
When the switching regulator supplies current continuously to the load, the LC filter is necessary for the smoothness of  
the output voltage. The Inductor ripple current ΔIL that flows to the inductor becomes small when an inductor with a large  
inductance value is selected. Consequently, the voltage of the output ripple also becomes small. It is the trade-off  
between the size and the cost of the inductor.  
The inductance value of the inductor is shown in the following equation:  
(푉  
−푉표)×푉표  
퐼푁(푀푎푥)  
퐿 =  
[H]  
×푓 ×∆ꢀ  
푆푊 ꢁ  
퐼푁(푀푎푥)  
Where:  
is the maximum input voltage  
ꢀꢃ (ꢄꢅꢆ)  
ΔIL is set to approximately 30 % of IO. To avoid discontinuous operation, ΔIL shall be set to make SW continuously  
pulsing (IL keeps continuously flowing). The condition of the continuous operation is shown in the following equation:  
(푉  
−푉 )×푉  
ꢈ ꢈ  
퐼푁(푀푎푥)  
>  
[A]  
2×푉  
×푓 ×ꢉ  
푆푊  
퐼푁(푀푎푥)  
Where:  
is the Load Current  
V
V
SW  
SW  
t
t
t
A
IL  
A
IL  
IO  
ΔIL  
IO  
t
Continuous Operation  
Discontinuous Operation  
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The smaller the ΔIL, each the Inductor core loss (iron loss), the loss due to ESR of the output capacitor, and the ΔVPP will  
be reduced. ΔVPP is shown in the following equation.  
∆ꢀ  
푃푃 = ∆ꢇ× 퐸ꢊ푅 + 8×퐶 ×푓  
[V]  
・・・・・(a)  
푆푊  
Where:  
퐸ꢊ푅 is the equivalent series resistance of output capacitor  
is the output condenser capacity  
Generally, even if ΔIL is somewhat large, ΔVPP of the target is satisfied because the ceramic capacitor has super-low  
ESR. In that case, it is also possible to use it by the discontinuous operation. The inductance value can be set small as  
an advantage.  
It contributes to the miniaturization of the application because of the lower rated current, smaller inductor is possible if  
the inductance value is small. The disadvantages are the increase in core losses in the inductor, the decrease in  
maximum output current, and the deterioration of the response. When other capacitors (electrolytic capacitor, tantalum  
capacitor, and electro conductive polymer etc.) are used for output capacitor CO, check the ESR from the manufacturer's  
data sheet and determine the ΔIL to fit within the acceptable range of ΔVPP. Especially in the case of electrolytic  
capacitor, because the capacity decrease at the low temperature is remarkable, ΔVPP increases. When using capacitor  
at the low temperature, it is necessary to note this.  
The maximum output electric current is limited to the overcurrent protection working current as shown in the following  
equation.  
푂(ꢄꢅꢆ) = ꢇꢌꢍꢉꢀꢄꢀ푇(ꢄ푖푛) ∆ꢀ [A]  
2
Where:  
푂(ꢄꢅꢆ) is the maximum output current  
ꢌꢍꢉꢀꢄꢀ푇(ꢄ푖푛) is the OCP operation current (Min)  
A
ISWLIMIT (Min)  
IO  
IL  
t
IL peak  
In current mode control, when the IC is operating in ON Duty 50 % and in the condition of continuous operation,The  
sub-harmonic oscillation may happen. The slope compensation circuit is integrated into the IC in order to prevent  
sub-harmonic oscillation. The sub-harmonic oscillation depends on the rate of increase of output switch current. If the  
inductor value is too small, the sub-harmonic oscillation may happen. And if the inductor value is too large, the feedback  
loop may not achieve stability. The inductor value which prevents sub-harmonic oscillation is shown in the following  
equation.  
−푉  
퐿 ≥ 2(1−퐷) × 푅푠 × 푉  
[H]  
2D−1  
퐼푁 (푀ꢏꢐ)  
푂  
ꢑ =  
ꢀꢃ(ꢄ푖푛)  
ꢒ = 6 × ꢓ × ꢔ0−ꢕ  
ꢌꢍ  
Where:  
is the switching pulse ON Duty.  
is the coefficient of current sense(4.0 µA / A)  
is the slope of slope compensation current  
The shielded type (closed magnetic circuit type) is the recommended type of inductor. Open magnetic circuit type can  
be used for low cost applications if noise issues are not concerned. But in this case, an influence other parts by  
magnetic field radiation is considered. An enough space layout between each parts should be noted.  
For ferrite core inductor type, please note that magnetic saturation may occur. It is necessary not to saturate the core in  
all cases. Precautions must be taken into account on the given provisions of the current rating because it differs  
according to each manufacturer.  
Please confirm the rated current at the maximum ambient temperature of the application to the manufacturer.  
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2. Selection of output Capacitor CO  
The output capacitor is selected on the basis of ESR that is required from the equation (a). ΔVPP can be reduced by  
using a capacitor with a small ESR. The ceramic capacitor is the best option that meets this requirement. The ceramic  
capacitor contributes to the size reduction of the application because it has small ESR. Please confirm frequency  
characteristic of ESR from the datasheet of the manufacturer, and consider ESR value is low in the switching frequency  
being used. It is necessary to consider the ceramic capacitor because the DC biasing characteristic is remarkable. For  
the voltage rating of the ceramic capacitor, twice or more than the maximum output voltage is usually required. By  
selecting these high voltages rating, it is possible to reduce the influence of DC bias characteristics. Moreover, in order  
to maintain good temperature characteristics, the one with the characteristic of X7R or more is recommended. Because  
the voltage rating of a mass ceramic capacitor is low, the selection becomes difficult in the application with high output  
voltage. In that case, please select electrolytic capacitor. Please consider having a voltage rating of 1.2 times or more of  
the output voltage when using electrolytic capacitor. Electrolytic capacitors have a high voltage rating, large capacity,  
small amount of DC biasing characteristic, and are generally cheap. Because main failure mode is OPEN, it is effective  
to use electrolytic capacitor for applications when reliability is required such as in-vehicle. But there are disadvantages  
such as, ESR is relatively high, and decreases capacitance value at low temperatures. In this case, please take note  
that ΔVPP may increase at low temperature conditions. Moreover, consider the lifetime characteristic of this capacitor  
because there is a possibility for it to dry up.  
A tantalum capacitor and a conductive polymer hybrid capacitor have excellent temperature characteristic unlike an  
electrolytic capacitor. Moreover, as these ESR is smaller than an electrolytic capacitor, a ripple voltage is relatively-small  
over wide temperature range. The design is facilitated because there is little DC bias characteristic like an electrolytic  
capacitor. Normally, for voltage rating, a tantalum capacitor is selected twice the output voltage, and for conductive  
polymer hybrid capacitor is selected 1.2 times more than the output voltage. The disadvantage of a tantalum capacitor is  
that the failure mode is SHORT, and the breakdown voltage is low. It is not generally selected in the application that  
reliability such as in automotive is demanded. The failure mode of an electro conductive polymer hybrid capacitor is  
OPEN. Though it is effective for reliability, the disadvantage is generally expensive.  
In case of Pch step-down switching regulator, when the input voltage decreases and the voltage between input and  
output becomes small, switching pulse begin to skip before the Pch MOSFET completely turns on. Because of this the  
output ripple voltage may increase. To improve performance in this condition, following is recommended:  
1. To use low ESR capacitor like ceramic or conductive polymer hybrid capacitor.  
2. Higher value of capacitance.  
These capacitors are rated in ripple current. The RMS values of the ripple current that can be obtained in the following  
equation must not exceed the ratings ripple current.  
∆ꢀ  
퐶푂(ꢗꢄꢌ)  
=
[A]  
12  
Where:  
퐶푂(ꢗꢄꢌ) is the value of the ripple electric current  
In addition, total value of capacitance with output line Co(Max), respect to CO, choose capacitance value less than the  
value obtained by the following equation.  
×(ꢀ  
−ꢀ  
)
)
ꢈ푆ꢘ퐴ꢙꢘ 푀푎푥  
푆푆(푀ꢏꢐ)  
ꢈꢁ퐼푀퐼ꢘ(푀ꢏꢐ)  
(
푂(ꢄꢅꢆ)  
=
[F]  
Where:  
ꢌꢍꢉꢀꢄꢀ푇(ꢄ푖푛) is the OCP operation switch current (Min)  
is the Soft Start Time (Min)  
ꢌꢌ(ꢄ푖푛)  
ꢌꢍꢌ푇ꢛꢗ푇(ꢄꢅꢆ) is the maximum output current during startup  
The startup failure may happen when the limits from the above-mentioned are exceeded. Especially if the capacitance  
value is extremely large, over-current protection may be activated by the inrush current at startup, and the output does  
not start. Please confirm this on the actual application. For stable transient response, the loop is dependent on the CO.  
Please select after confirming the setting of the phase compensation circuit.  
Also, in case of large changing input voltage and load current, select the capacitance in accordance with verifying that  
the actual application meets with the required specification.  
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Selection of Components Externally Connected continued  
3. Selection of capacitor CIN / Cbulk input  
The input capacitor is usually required for two types of decoupling: capacitors CIN and bulk capacitors Cbulk. Ceramic  
capacitors with values more than 2.4 µF are necessary for the decoupling capacitor. Ceramic capacitors are effective by  
being placed as close as possible to the VIN pin. Voltage rating is recommended to more than 1.2 times the maximum  
input voltage, or twice the normal input voltage. The capacitor value including temperature change, DC bias change, and  
aging change must be larger than minimum value. Also, the IC might not function properly when the PCB layout or the  
position of the capacitor is not good. Please check Notes on the PCB Layouton page 24.  
The bulk capacitor is option. The bulk capacitor prevents the decrease in the line voltage and serves a backup power  
supply to keep the input potential constant. The low ESR electrolytic capacitor with large capacity is suitable for the bulk  
capacitor. It is necessary to select the best capacitance value as per set of application. n that case, please consider not to  
exceed the rated ripple current of the capacitor.  
The RMS value of the input ripple electric current is obtained in the following equation.  
푉 ×(푉 −푉 )  
퐼푁  
퐶ꢀꢃ(ꢗꢄꢌ) = ꢇ푂(ꢄꢛ푋)  
[A]  
퐼푁  
Where:  
퐶ꢀꢃ(ꢗꢄꢌ) is the RMS value of the input ripple electric current  
In addition, in automotive and other applications requiring high reliability, it is recommended that capacitors are connected  
in parallel to accommodate a multiple of electrolytic capacitors to minimize the chances of drying up. It is recommended by  
making it into two series + two parallel structures to decrease the risk of ceramic capacitor destruction due to short circuit  
conditions. The line has been improved to the summary respectively by 1pack in each capacitor manufacturer and  
confirms two series and two parallel structures to each manufacturer.  
When impedance on the input side is high because of wiring from the power supply to VIN is long, etc., and then high  
capacitance is needed. In actual conditions, it is necessary to verify that there is no problem when IC operation turns off or  
overshoot the output due to the change in VIN at transient response.  
4. Selection of output voltage setting registance R1, R2  
Output voltage is governed by the following equation.  
= 0.ꢝ × ꢗ1ꢞꢗ2 [V]  
ꢗ2  
Please set feedback resistor R2 below 30 to reduce the error margin by the bias current. In addition, since power  
efficiency is reduced with a small R1 + R2, please set the current flowing through the feedback resistor to be small as  
possible than the output current IO.  
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Selection of Components Externally Connected continued  
5. Selection of the schottky barrier diode D1  
The schottky barrier diode that has small forward voltage and short reverse recovery time is used for D1. The important  
parameters for the selection of the schottky barrier diode are the average rectified current and direct current  
inverse-direction voltage. Average rectified current IF (AVG) is obtained in the following equation:  
−푉  
퐼푁(푀퐴ꢟ)  
퐹(ꢛ푉퐺) = ꢇ푂(ꢄꢛ푋)  
×
[A]  
퐼푁(푀퐴ꢟ)  
Where:  
퐹(ꢛ푉ꢠ) is the average rectified current  
The absolute maximum rating of the schottky barrier diode rectified current average is more than 1.2 times IF(AVG) and  
the absolute maximum rating of the DC reverse voltage is greater than or equal to 1.2 times the maximum input voltage.  
The loss of D1 is obtained in the following equation:  
)
× ꢂꢣ [W]  
(
퐼푁 푀퐴ꢟ ꢢ  
퐷푖 = ꢇ푂(ꢄꢛ푋)  
×
퐼푁(푀퐴ꢟ)  
Where:  
ꢂꢣ is the forward voltage in 푂(ꢄꢛ푋) condition  
Selecting a diode that has small forward voltage, and short reverse recovery time is highly effective. Please select a diode  
with 0.65 V Max of forward voltage. Please note that there is possibility of internal element destruction when a diode with a  
larger VF than this is used. Because the reverse recovery time of the schottky barrier diode is so short, that it is possible to  
disregard, the switching loss can be disregarded. When it is necessary for the diode to endure the state of output  
short-circuit, power dissipation ratings and the heat radiation ability are needed to be considered. The rated current that is  
required is about 1.5 times the overcurrent detection value.  
6. Selection of the switching frequency setting resistance RRT,CRT  
The internal switching frequency can be set by connecting a resistor between RT and GND.  
The range that can be set is 50 kHz to 600 kHz, and the relation between resistance and the switching frequency is decided as  
shown in the figure below. When setting beyond this range, there is a possibility that there is no oscillation and IC operation cannot  
be guaranteed.  
CRT is required to stabilize switching frequency. Typical capacitance value is 100pF. Actually, the changes in the frequency  
characteristic are greatly affected by the type and the condition (temperature, etc.) of parts that are used, the wire  
routing and layout of the PCB.  
700  
RRT [kΩ]  
22  
fSW [kHz]  
599  
555  
500  
455  
418  
386  
359  
329  
303  
281  
258  
235  
216  
197  
182  
165  
RRT [kΩ]  
100  
110  
fSW [kHz]  
151  
139  
128  
119  
104  
98.  
88  
600  
500  
400  
300  
200  
100  
0
24  
27  
120  
130  
150  
160  
180  
200  
220  
240  
270  
300  
330  
30  
33  
36  
39  
43  
80  
47  
73  
51  
68  
56  
61  
62  
55  
0
100  
200  
300  
400  
500  
68  
51  
75  
Switching Frequency Setting  
Resistance : RRT [kΩ]  
82  
91  
Figure 13. Switching Frequency  
vs Switching Frequency Setting Resistance  
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Selection of Components Externally Connected continued  
7. Selection of the phase compensation circuit R3, C1, C2  
A good high frequency response performance is achieved by setting the 0 dB crossing frequency, fc, (frequency at 0 dB  
gain) high. However, you need to be aware of the trade-off correlation between speed and stability. Moreover, DC / DC  
converter application is sampled by switching frequency, so the gain of this switching frequency must be suppressed. It  
is necessary to set the 0 dB crossing frequency to 1 / 10 or less of the switching frequency. In summary, target these  
characteristics as follows:  
When the 0 dB crossing frequency, fc, phase lag is less than or equal to 135 ˚(More than 45 ˚ phase margin).  
0 dB crossing frequency, fc, is 1 / 10 times or less of the switching frequency. To improve the responsiveness, higher  
the phase compensation is set by the capacitor and resistor which are connected in series to the VC pin.  
Achieving stability by using the phase compensation is done by cancelling the fP1 and fP2 (error amp pole and  
power stage pole) of the regulation loop by use of fZ1. fP1, fP2 and fZ1 are determined in the following equations.  
1
ꢓ =  
[Hz]  
[Hz]  
푍1  
2휋×ꢗ3×퐶1  
1
ꢓ =  
푃1  
2휋×퐶 ×ꢗ  
ꢤ퐴  
ꢓ =  
푃2  
[Hz]  
2휋×퐶1×ꢛ  
Also, by inserting a capacitor in C2, phase lead fZ2 can be added.  
1
ꢓ =  
푍2  
[Hz]  
2휋×ꢗ1×퐶2  
Where:  
is the resistance assumed actual load[Ω] = Output Voltage[V] / Output Current[A]、  
ꢠꢛ is the Error Amp trans conductance (270 µA / V)  
is the Error Amp Voltage Gain (78 dB)  
SW  
L1  
Vo  
C2  
Vo  
CO  
RO  
D1  
R1  
R2  
FB  
ERROR_AMP  
VREF  
VC  
R3  
C1  
Setting Phase Compensation Circuit  
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Selection of Components Externally Connected continued  
By setting zero and pole settings to suitable position, stable frequency characteristic can be achieved. The typical  
setting of fZ1, fZ2 is as below.  
1. fZ1 setting is to cancel fP1.  
For instance, application which load current is 500 mA ~ 3.5 A, typical setting of FZ1, FP1 setting in Application  
Examples1 (P.19) is as below.  
0.5 × ꢓ ≤ ꢓ ≤ 5 × ꢓ  
푝1  
푝1  
푍1  
(fP1362 Hz [IO=500 mA], 2.53 kHz [IO =3.5 A] fZ1=1.69 kHz)  
2. fZ2 setting is to shift the 0 dB crossing frequency to higher frequency or to improvephase margin near the 0 dB  
crossing frequency.  
Typical setting of FZ2, FP1 inApplication Examples3 (P.23) is as below.  
0.5 × ꢓ  
≤ ꢓ ≤ ꢨ × ꢓ  
푍2 푧푒푟표  
푧푒푟표  
(fZERO31.6 kHz [IO=400 mA] fZ2=20.6 kHz)  
Actually, the changes in the frequency characteristic are greatly affected by the type and the condition (temperature,  
etc.) of parts that are used, the wire routing and layout of the PCB.  
Please confirm stability and responsiveness in actual equipment.  
To check the actual frequency characteristics, use a FRA or a gain-phase analyzer. Moreover, the method of observing  
the degree of change by the loading response can be performed when these measuring instruments are not available.  
The phase margin degree is said to be low when there are lots of variation quantities after the output is made to change  
under no load to maximum load. It can also be observed that the phase margin degree is low when there is a lot of  
ringing frequencies after the transition of no load to maximum load, usually two times or more ringing than the standard.  
However, a quantitative phase margin degree cannot be confirmed.  
Maximum load  
Load  
IO  
Inadequate phase margin  
Output voltage  
VO  
Adequate phase margin.  
t
0
Measurement of Load Response  
8. Setting of soft start time (TSS)  
The soft start function is necessary to prevent inrush of coil current and output voltage overshoot at startup.  
TSS will be changed by setting the switching frequency.  
The production tolerance of TSS is ±18.1%.TSS can be calculated by using the equation.  
ꢕ9ꢩ.8  
ꢚ =  
ꢌꢌ  
[s]  
푓ꢪ푤  
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TSZ02201-0T1T0AL00130-1-2  
15.Sep.2015 Rev.005  
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TSZ2211115001  
BD906xx-C series  
Application Examples1  
Parameter  
Product Name  
Symbol  
IC  
Specification case  
BD90640HFP / EFJ-C  
6 V to 18 V  
VIN  
Input Voltage  
VO  
5 V  
Output Voltage  
ΔVPP  
IO  
20 mVp-p  
Output Ripple Voltage  
Output Current  
Min 1.0 A / Typ 1.5 A / Max 2.0 A  
500 kHz  
fSW  
Switching Frequency  
Operating Temperature  
Topr  
-40 °C ~ +105 °C  
Specification Example 1  
L1  
VO  
PVIN  
VIN  
RT  
SW  
FB  
R100  
R1  
D1  
CO  
VIN  
C2  
Cbulk  
CIN  
CRT  
RRT  
VEN / SYNC  
R2  
EN / SYNC  
GND  
VC  
R3  
C1  
Reference Circuit 1  
No  
R1  
Package  
1608  
1608  
1608  
-
Parameters  
Part name (series)  
MCR03 series  
MCR03 series  
MCR03 series  
-
Type  
Manufacturer  
43 kΩ, 1 %, 1 / 10 W  
8.2 kΩ, 1 %, 1 / 10 W  
20 kΩ, 1 %, 1 / 10 W  
SHORT  
Chip resistor  
Chip resistor  
Chip resistor  
-
ROHM  
ROHM  
ROHM  
-
R2  
R3  
R100  
RRT  
C1  
27 kΩ, 1 %, 1 / 10 W  
4700 pF, R, 50 V  
OPEN  
1608  
1608  
-
MCR03 series  
GCM series  
-
Chip resistor  
Ceramic capacitor  
-
ROHM  
Murata  
-
C2  
100 pF, CH, 50 V  
4.7 μF, X7R, 50 V  
CRT  
CIN  
1608  
3225  
3225  
-
GCM series  
GCM series  
GCM series  
CD series  
Ceramic capacitor  
Ceramic capacitor  
Ceramic capacitor  
Murata  
Murata  
Murata  
CO  
44 μF (22 μF, X7R, 16 V × 2)  
220 μF, 50 V  
Cbulk  
Electrolytic capacitor NICHICON  
L1 W 9.7 x H 3.8 x L 10 mm3  
15 μH  
CLF10040T-150M-H  
RB095BM-40FH  
Inductor  
TDK  
D1  
CPD  
Average I = 6 A Max  
Schottky Diode  
ROHM  
Parts List 1  
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19/40  
TSZ2211115001  
BD906xx-C series  
Characteristic Data (Application Examples 1)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tektronix DPO5054  
VO 10 mV / divAC  
0.0  
0.5  
1.0  
1.5  
2.0  
Output Current : IO[A]  
Figure 15. Output Ripple Voltage 1  
(VIN = 13.2 V, IO = 1.5 A, 1 μs / div)  
Figure 14. Efficiency vs Output Current  
(Conversion Efficiency 1 VIN = 13.2 V)  
Tektronix DPO5054  
FRA5087  
VO 50 mV / divAC  
Phase  
Gain  
IO 200 mA / divDC offset 1.5A  
Figure 16. Frequency Characteristic 1  
(VIN = 13. 2 V, IO = 1.5 A)  
Figure 17. Load Response 1  
(VIN = 13.2 V, IO = 1.5 A 2.0 A, 200 μs / div)  
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TSZ2211115001  
BD906xx-C series  
Application Examples 2  
Parameter  
Product Name  
Symbol  
IC  
Specification case  
BD90620HFP / EFJ-C  
6 V to 18 V  
Input Voltage  
VIN  
5 V  
Output Voltage  
VO  
20 mVp-p  
Output Ripple Voltage  
Output Current  
ΔVPP  
IO  
Min 0.4 A / Typ 0.8 A / Max 1.5 A  
500 kHz  
Switching Frequency  
Operating Temperature  
fSW  
-40 °C ~ +105°C  
Topr  
Specification Example 2  
L1  
VO  
PVIN  
VIN  
RT  
SW  
R100  
R1  
D1  
CO  
VIN  
C2  
Cbulk  
CIN  
FB  
CRT  
RRT  
VEN / SYNC  
R2  
EN / SYNC  
GND  
VC  
R3  
C1  
Reference Circuit 2  
No  
R1  
Package  
1608  
1608  
1608  
-
Parameters  
Part name (series)  
MCR03 series  
MCR03 series  
MCR03 series  
-
Type  
Manufacturer  
43 kΩ, 1 %, 1 / 10 W  
8.2 kΩ, 1 %, 1 / 10 W  
20 kΩ, 1 %, 1 / 10 W  
SHORT  
Chip resistor  
Chip resistor  
Chip resistor  
-
ROHM  
ROHM  
ROHM  
-
R2  
R3  
R100  
RRT  
C1  
27 kΩ, 1 %, 1 / 10 W  
4700 pF, R, 50 V  
OPEN  
1608  
1608  
-
MCR03 series  
GCM series  
-
Chip resistor  
Ceramic capacitor  
-
ROHM  
Murata  
-
C2  
100 pF, CH, 50 V  
4.7 μF, X7R, 50 V  
CRT  
CIN  
1608  
3225  
3225  
-
GCM series  
GCM series  
GCM series  
CD series  
Ceramic capacitor  
Ceramic capacitor  
Ceramic capacitor  
Murata  
Murata  
Murata  
CO  
44 μF (22 μF, X7R, 16 V × 2)  
220 μF, 50 V  
Cbulk  
Electrolytic capacitor NICHICON  
L1 W 9.7 x H 3.8 x L 10 mm3  
22 μH  
CLF10040T-220M-H  
RB095BM-40FH  
Inductor  
TDK  
D1  
CPD  
Average I = 6 A Max  
Schottky Diode  
ROHM  
Parts List 2  
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TSZ2211115001  
BD906xx-C series  
Characteristic Data (Application Examples 2)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tektronix DPO5054  
VO 10 mV / divAC  
0.0  
0.5  
1.0  
1.5  
Output Current : IO[A]  
Figure 18. Efficiency vs Output Current  
(Conversion Efficiency 2 VIN = 13.2 V)  
Figure 19. Output Ripple Voltage 2  
(VIN = 13.2 V, IO = 0.8 A, 1 μs / div)  
Tektronix DPO5054  
FRA5087  
VO 50 mV / divAC  
Phase  
Gain  
IO 200 mA / divDC  
Figure 20. Frequency Characteristic 2  
(VIN = 13.2 V, IO = 0.8 A)  
Figure 21. Load ResponseResponse 2  
(VIN = 13.2 V, IO = 0.8 A 1.5 A, 200 μs / div)  
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TSZ2211115001  
BD906xx-C series  
Application Examples 3  
Parameter  
Product Name  
Symbol  
IC  
Specification case  
BD90610EFJ-C  
6 V to 18 V  
Input Voltage  
VIN  
5 V  
Output Voltage  
VO  
20 mVp-p  
Output Ripple Voltage  
Output Current  
ΔVPP  
IO  
Min 0.1 A / Typ 0.4 A / Max 0.8 A  
500 kHz  
Switching Frequency  
Operating Temperature  
fSW  
-40 °C ~ +105°C  
Topr  
Specification Example 3  
L1  
VO  
PVIN  
VIN  
RT  
SW  
R100  
R1  
D1  
CO  
VIN  
C2  
Cbulk  
CIN  
FB  
CRT  
RRT  
VEN / SYNC  
R2  
EN / SYNC  
GND  
VC  
R3  
C1  
Reference Circuit 3  
No  
R1  
Package  
1608  
1608  
1608  
-
Parameters  
43 kΩ, 1 %, 1 / 10 W  
8.2 kΩ, 1 %, 1 / 10 W  
33 kΩ, 1 %, 1 / 10 W  
SHORT  
Part name (series)  
MCR03 series  
MCR03 series  
MCR03 series  
-
Type  
Manufacturer  
ROHM  
ROHM  
ROHM  
-
Chip resistor  
Chip resistor  
Chip resistor  
-
R2  
R3  
R100  
RRT  
C1  
27 kΩ, 1 %, 1 / 10 W  
10000 pF, R, 50 V  
180pF,CH,50V  
1608  
1608  
1608  
1608  
3225  
3225  
-
MCR03 series  
GCM series  
GCM series  
GCM series  
GCM series  
GCM series  
CD series  
Chip resistor  
ROHM  
Murata  
Murata  
Murata  
Murata  
Murata  
Ceramic capacitor  
Ceramic capacitor  
Ceramic capacitor  
Ceramic capacitor  
Ceramic capacitor  
C2  
100 pF, CH, 50 V  
4.7 μF, X7R, 50 V  
CRT  
CIN  
CO  
44 μF (22 μF, X7R, 16 V × 2)  
220 μF, 50 V  
Cbulk  
Electrolytic capacitor NICHICON  
L1 W 9.7 x H 3.8 x L 10 mm3  
100 μH  
CLF10040T-101M-H  
RB055L-40TF  
Inductor  
TDK  
D1  
PMDS  
Average I = 3 A Max  
Schottky Diode  
ROHM  
Parts List 3  
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TSZ2211115001  
BD906xx-C series  
Characteristic Data (Application Examples 3)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tektronix DPO5054  
VO 10 mV / divAC  
0.0  
0.2  
0.4  
0.6  
0.8  
Output Current : IO[A]  
Figure 23. Output Ripple Voltage 3  
(VIN = 13.2 V, IO = 0.4 A, 1 μs / div)  
Figure 22. Efficiency vs Output Current  
(Conversion Efficiency 3 VIN = 13.2 V)  
Tektronix DPO5054  
FRA5087  
VO 50 mV / div@  
Phase  
Gain  
IO 200 mA / divDC  
Figure 24. Frequency Characteristic 3  
(VIN = 13.2 V, IO = 0.4 A)  
Figure 25. Load Response 3  
(VIN = 13.2 V, IO = 0.4 A 0.8 A, 200 μs / div)  
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TSZ2211115001  
BD906xx-C series  
Application Examples 4  
Parameter  
Product Name  
Symbol  
IC  
Specification case  
BD90640HFP / EFJ-C  
3.5 V to 18 V  
Input Voltage  
VIN  
Output Voltage  
VO  
3.3 V  
Output Ripple Voltage  
Output Current  
ΔVPP  
IO  
20 mVp-p  
Min 1.0 A / Typ 1.5 A / Max 2.0A  
500 kHz  
Switching Frequency  
Operating Temperature  
fSW  
Topr  
-40 °C ~ +125°C  
Specification Example 4  
L1  
VO  
PVIN  
SW  
FB  
VC  
R100  
R1  
D1  
CO  
VIN  
C2  
VIN  
Cbulk  
CIN  
RT  
CRT  
RRT  
VEN / SYNC  
R2  
EN / SYNC  
R3  
C1  
GND  
Reference Circuit 4  
No  
R1  
Package  
1608  
1608  
1608  
-
Parameters  
Part name (series)  
MCR03 series  
MCR03 series  
MCR03 series  
-
Type  
Manufacturer  
ROHM  
ROHM  
ROHM  
-
47 kΩ, 1 %, 1 / 10 W  
15 kΩ, 1 %, 1 / 10 W  
10 kΩ, 1 %, 1 / 10 W  
SHORT  
Chip resistor  
Chip resistor  
Chip resistor  
-
R2  
R3  
R100  
RRT  
C1  
27 kΩ, 1 %, 1 / 10 W  
6800 pF, R, 50 V  
OPEN  
1608  
1608  
-
MCR03 series  
GCM series  
-
Chip resistor  
ROHM  
Murata  
-
Ceramic capacitor  
-
C2  
100 pF, CH, 50 V  
4.7 μF, X7R, 50 V  
CRT  
CIN  
1608  
3225  
3225  
-
GCM series  
GCM series  
GCM series  
CZ series  
Ceramic capacitor  
Ceramic capacitor  
Ceramic capacitor  
Murata  
Murata  
Murata  
CO  
44 μF (22 μF, X7R, 16 V × 2)  
220 μF,35 V × 2  
Cbulk  
Electrolytic capacitor NICHICON  
L1 W 9.7 x H 3.8 x L 10 mm3  
15 μH  
CLF10040T-150M-D  
RB095BM-40FH  
Inductor  
TDK  
D1  
CPD  
Average I = 6 A Max  
Schottky Diode  
ROHM  
Parts List 4  
www.rohm.com  
TSZ02201-0T1T0AL00130-1-2  
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25/40  
TSZ2211115001  
BD906xx-C series  
Characteristic Data (Application Examples 4)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tektronix DPO5054  
VO 10 mV / divAC  
0.0  
0.5  
1.0  
1.5  
2.0  
Output Current : IO[A]  
Figure 26. Efficiency vs Output Current  
(Conversion Efficiency 4 VIN = 13.2 V)  
Figure 27. Output Ripple Voltage 4  
(VIN = 13.2 V, IO = 1.5 A, 1 μs / div)  
FRA5087  
Tektronix DPO5054  
VO 50 mV / divAC  
Phase  
Gain  
IO 200 mA / divDC offset  
Figure 28. Frequency Characteristic 4  
(VIN = 13.2 V, IO = 1.5 A)  
Figure 29. Load Response 4  
(VIN = 13.2 V, IO = 1.5 A 2.0 A, 200 μs / div)  
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TSZ2211115001  
BD906xx-C series  
Application Examples 5  
Parameter  
Product Name  
Symbol  
IC  
Specification case  
BD90640HFP / EFJ-C  
9 V to 18 V  
Input Voltage  
VIN  
8.8 V  
Output Voltage  
VO  
100 mVp-p  
Output Ripple Voltage  
Output Current  
ΔVPP  
IO  
Min 1.0 A / Typ 1.5 A / Max 2.0 A  
500 kHz  
Switching Frequency  
Operating Temperature  
fSW  
-40 °C ~ +125°C  
Topr  
Specification Example 5  
L1  
VO  
PVIN  
SW  
FB  
VC  
R100  
R1  
D1  
CO  
VIN  
C2  
VIN  
Cbulk  
CIN  
RT  
CRT  
RRT  
VEN / SYNC  
R2  
EN / SYNC  
R3  
C1  
GND  
Reference Circuit 5  
No  
R1  
Package  
Parameters  
Part name (series)  
MCR03 series  
MCR03 series  
MCR03 series  
-
Type  
Manufacturer  
ROHM  
ROHM  
ROHM  
-
1608  
1608  
1608  
-
51 kΩ, 1 %, 1 / 10 W  
5.1 kΩ, 1 %, 1 / 10 W  
91 kΩ, 1 %, 1 / 10 W  
SHORT  
Chip resistor  
Chip resistor  
Chip resistor  
-
R2  
R3  
R100  
RRT  
C1  
27 kΩ, 1 %, 1 / 10 W  
10000 pF, R, 50 V  
OPEN  
1608  
1608  
-
MCR03 series  
GCM series  
-
Chip resistor  
ROHM  
Murata  
-
Ceramic capacitor  
-
C2  
100 pF, CH, 50 V  
4.7 μF, X7R, 50 V  
270 μF, 25 V  
CRT  
CIN  
1608  
3225  
-
GCM series  
GCM series  
HVP series  
CZ series  
Ceramic capacitor  
Ceramic capacitor  
Hybrid capacitor  
Murata  
Murata  
SUNCON  
CO  
Cbulk  
-
220 μF, 35 V × 2  
22 μH  
Electrolytic capacitor NICHICON  
L1 W 9.7 x H 3.8 x L 10 mm3  
CLF10040T-220M-D  
RB095BM-40FH  
Inductor  
TDK  
D1  
CPD  
Average I = 6 A Max  
Schottky Diode  
ROHM  
Parts List 5  
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TSZ02201-0T1T0AL00130-1-2  
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27/40  
TSZ2211115001  
BD906xx-C series  
Characteristic Data (Application Examples 5)  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
Tektronix DPO5054  
VO 10 mV / divAC  
0.0  
0.5  
1.0  
1.5  
2.0  
Output Current : IO[A]  
Figure 31. Output Ripple Voltage 5  
(VIN = 13.2 V, IO = 1.5 A, 1 μs / div)  
Figure 30. Efficiency vs Output Current  
(Conversion5 Efficiency VIN = 13.2 V)  
FRA5087  
Tektronix DPO5054  
VO 50 mV / divAC  
Phase  
Gain  
IO 200 mA / divDC offset  
Figure 32. Frequency Characteristic 5  
(VIN = 13.2 V, IO = 1.5 A)  
Figure 33. Load Response 5  
(VIN = 13.2 V, IO = 1.5 A 2.0 A, 500 μs / div)  
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TSZ2211115001  
BD906xx-C series  
Automotive Power Supply Line Circuit  
Reverse-touching  
protection Diode  
BATTERY  
LINE  
VIN  
BD906xx-C series  
L
D
TVS  
C
C
π type filter  
Figure 34. Filter Circuit  
The input filter circuit for EMC measures is depicted in the above Figure 34.  
The π type filters are the third order LC filters. When the decoupling capacitor for high frequency is insufficient, it uses π  
type filters. An excellent characteristic can be performed as EMI filter by a large attenuation characteristic.  
Components for π type filter shall be closely-placed.  
TVS (Transient Voltage Suppressors) are used for the first protection of the in automotive power supply line. Because it is  
necessary to endure high energy when the load is connected, a general zener diode is insufficient. The following are  
recommended. To protect it when the power supply such as BATTERY is accidentally connected in reverse, reverse polarity  
protection diode is needed.  
Device  
Part name (series)  
CLF series  
Manufacturer  
TDK  
Device  
TVS  
D
Part name (series)  
SM8 series  
Manufacturer  
Vishay  
L
L
XAL series  
Coilcraft  
S3A thru S3M series  
Vishay  
C
CJ series / CZ series  
NICHICON  
Parts of Automotive Power Supply Line Circuit  
Recommended Parts Manufacturer List  
Shown below is the list of the recommended parts manufacturers for reference.  
Type  
Electrolytic capacitor  
Ceramic capacitor  
Inductor  
Manufacturer  
NICHICON  
Murata  
URL  
www.nichicon.com  
www.murata.com  
www.global.tdk.com  
www.coilcraft.com  
www.sumida.com  
www.vishay.com  
www.rohm.com  
TDK  
Inductor  
Coilcraft  
SUMIDA  
Vishay  
Inductor  
Diode  
Diode / Resistor  
ROHM  
www.rohm.com  
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TSZ2211115001  
BD906xx-C series  
Directions for Pattern Layout of PCB  
GND  
R100  
C2  
R1  
L1  
VIN  
VO  
R3  
D1  
Cbulk  
CO1  
CO2  
CIN2 CIN1  
RRT  
CRT  
C1  
R2  
Exposed die pad is needed to be connected to GND.  
Application Circuit (HRP7)  
C2  
R1  
R100  
R2  
1.RT  
CRT  
8.FB  
RRT  
L1  
VIN  
VO  
2.SW  
7.PVIN  
6.VIN  
5.VC  
CO1 CO2  
CIN1 CIN2  
Cbulk  
D1  
3.EN / SYNC  
4.GND  
R3  
C1  
Exposed die pad is needed to be connected to GND.  
Application Circuit (HTSOP-J8)  
1. Arrange the wirings of the wide lines, shown above, as short as possible in a broad pattern.  
2. Locate the input ceramic capacitor CIN as close to the VIN - GND pin as possible.  
3. Locate RRT as close to the RT pin as possible.  
4. Locate R1 and R2 as close to the FB pin as possible, and provide the shortest wiring from the R1 and R2 to the FB pin.  
5. Locate R1 and R2 as far away from the L1 as possible.  
6. Separate Power GND (schottky diode, I/O capacitor`s GND) and Signal GND (RT, VC), so that switching noise does not  
have an effect on SIGNAL GND at all.  
7. The feedback frequency characteristics (phase margin) can be measured using FRA by inserting a resistor at the  
location of R100. However, this should be shorted during normal operation. R100 is option pattern for measuring the  
feedback frequency characteristics.  
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30/40  
TSZ2211115001  
BD906xx-C series  
Reference layout pattern  
HRP7  
EN /  
SYNC  
EN/  
SYNC  
PGND  
PGND  
GND  
GND  
CO  
1
CO2  
R2  
R3  
R1  
C2  
L1  
VIN  
CIN  
1
VIN  
CIN  
2
Cbulk  
VO  
VO  
PGND  
PGND  
Top Layer  
Bottom Layer  
HTSOP-J8  
VIN  
VIN  
PGND  
PGND  
PGND  
PGND  
Cbulk  
CO1  
CO2  
D1  
RRT  
CRT  
R2  
R1  
C2  
RT  
SW  
EN  
FB  
PVIN  
VIN  
VC  
CIN  
2
CIN  
1
GND  
L1  
VO  
VO  
GND  
GND  
C1  
EN /  
SYNC  
EN/  
SYNC  
Top Layer  
Bottom Layer  
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Power Dissipation  
For thermal design, be sure to operate the IC within the following conditions.  
(Since the temperatures described hereunder are all guaranteed temperatures, take margin into account.)  
1. The ambient temperature Ta is to be 125 °C or less.  
2. The chip junction temperature Tj is to be 150 °C or less.  
The chip junction temperature Tj can be considered in the following two patterns:  
To obtain Tj from the package surface center temperature Tt in actual use  
ꢚ푗 = ꢚ푡 + 휓퐽푇 × ꢫ  
To obtain Tj from the ambient temperature Ta  
ꢚ푗 = ꢚꢬ + 휃푗ꢬ × ꢫ  
Reference ValueHRP7  
Reference ValueHTSOP-J8  
θjc  
θjc  
Top : 22 °C / W  
Top : 44 °C / W  
Bottom : 2 °C / W  
θja  
Bottom : 14 °C / W  
θja  
95.3 °C / W 1-layer PCB  
17.9 °C / W 4-layer PCB  
ψJT  
189.4 °C / W 1-layer PCB  
40.3 °C / W 4-layer PCB  
ψJT  
5 °C / W 1-layer PCB  
1 °C / W 4-layer PCB  
PCB Size 114.3 mm x 76.2 mm x 1.60 mmt  
21°C / W 1-layer PCB  
5°C / W 4-layer PCB  
PCB Size 114.3 mmx76.2 mm x 1.60 mmt  
The heat loss W of the IC can be obtained by the formula shown below:  
푂  
2
( )  
+ ꢂ × ꢇꢀꢃ + × ꢚꢭ + ꢚꢓ × ꢂ × ꢇ× ꢓ푠ꢮ  
ꢀꢃ ꢀꢃ  
ꢫ = 푅ON × ꢇ푂  
×
ꢀꢃ  
Where:  
RON is the ON Resistance of IC (Refer to page 7) [Ω]  
IO is the Load Current [A]  
VO is the Output Voltage [V]  
VIN is the Input Voltage [V]  
IIN is the Circuit Current (Refer to page 7) [A]  
Tr is the Switching Rise Time [s] (Typ:17ns)  
Tf is the Switching Fall Time [s] (Typ:17ns)  
fsw is the Switching Frequency [Hz]  
Tr  
(17 ns)  
Tf  
(17 ns)  
VIN  
2
①푅푂ꢃ × ꢇ푂  
SW wave form  
② × (ꢚꢭ + ꢚꢓ) × ꢂ × ꢇ×  
ꢀꢃ  
GND  
= ꢚꢭ × ꢂ × ꢇ× ꢓ푠ꢮ  
ꢀꢃ  
1
fsw  
T=  
SW Wave Form  
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Thermal reduction characteristics  
HRP7  
7.0  
IC mounted on ROHM standard board based on JEDEC51-3  
1 - layer PCB  
Board materials : FR-4  
Board size : 114.3 mm × 76.2 mm × 1.57 mmt  
Top copper foil : footprint + wiring to measure, 70 μm copper.  
6.0  
6.98 W  
5.0  
4.0  
3.0  
2.0  
IC mounted on ROHM standard board based on JEDEC51-5,7  
4 - layer PCB  
Board materials : FR-4  
Board size : 114.3 mm × 76.2 mm × 1.60 mmt  
Thermal via : pitch 1.20 mm, diameter Φ0.30 mm  
Top copper foil : footprint + wiring to measure, 70 μm copper.  
2 inner layers copper foil : 74.2 mm × 74.2 mm, 35um copper.  
Reverse copper foil : 74.2 mm × 74.2 mm, 70um copper.  
1.0  
1.31 W  
0.0  
0
25  
50  
75 100 125 150  
Condition: θja = 95.3 °C / W  
Condition: θja = 17.9 °C / W  
Ambient Temperature : [˚C]  
Figure 35. Power Dissipation vs Ambient Temperature  
(Thermal Reduction Characteristics (HRP7) )  
HTSOP-J8  
IC mounted on ROHM standard board based on JEDEC51-3  
1 - layer PCB  
Board materials : FR-4  
Board size : 114.3 mm × 76.2 mm × 1.57 mmt  
Top copper foil : footprint + wiring to measure, 70 μm copper.  
7.0  
6.0  
5.0  
4.0  
IC mounted on ROHM standard board based on JEDEC51-5,7  
4 - layer PCB  
3.10 W  
3.0  
2.0  
Board materials : FR-4  
Board size : 114.3 mm × 76.2 mm × 1.60 mmt  
Thermal via : pitch 1.20 mm, diameter Φ0.30 mm  
Top copper foil : footprint + wiring to measure, 70 μm copper.  
2 inner layers copper foil : 74.2 mm × 74.2 mm, 35um copper.  
Reverse copper foil : 74.2 mm × 74.2 mm, 70um copper.  
0.66 W  
1.0  
0.0  
Condition: θja = 189.4 °C / W  
Condition: θja = 40.3 °C / W  
0
25 50 75 100 125 150  
Ambient Temperature : [˚C]  
Figure 36. Power Dissipation vs Ambient Temperature  
(Thermal Reduction Characteristics (HTSOP-J8) )  
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I/O Equivalent Circuit  
VIN  
VC  
RT  
Internal  
Supply  
Internal  
Supply  
Internal  
Supply  
30kΩ  
VIN  
1kΩ  
1kΩ  
1kΩ  
VC  
RT  
30kΩ  
1kΩ  
4MΩ  
SW  
VIN  
FB  
Internal  
Supply  
PVIN  
Internal  
Supply  
VIN  
200kΩ  
SW  
30kΩ  
10kΩ  
30kΩ  
FB  
EN / SYNC  
VIN  
1333kΩ  
400kΩ  
EN / SYNC  
100kΩ  
200kΩ  
185kΩ  
250kΩ  
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Operational Notes  
1.  
2.  
Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the ICs power  
supply pins.  
Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the  
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog  
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and  
aging on the capacitance value when using electrolytic capacitors.  
3.  
Ground Voltage  
Ensure that no pins are at a potential below the ground pin at any time, even during transient condition. However, pins  
that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground due to  
back EMF or electromotive force. In such cases, the user should make sure that such voltages going below ground will  
not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions such as  
motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.  
4.  
5.  
Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
Thermal Consideration  
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in  
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when  
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,  
increase the board size and copper area to prevent exceeding the Pd rating.  
6.  
7.  
Recommended Operating Conditions  
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.  
The electrical characteristics are guaranteed under the conditions of each parameter.  
Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush  
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC  
has more than one power supply. Therefore, give special consideration to power coupling capacitance,  
power wiring, width of ground wiring, and routing of connections.  
8.  
9.  
Operation Under Strong Electromagnetic Field  
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.  
Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may  
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply  
should always be turned off completely before connecting or removing it from the test setup during the inspection  
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during  
transport and storage.  
10. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
11. Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small  
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and  
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the  
power supply or ground line.  
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Operational Notes continued  
12. Regarding the Input Pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
P+  
N
P+  
P
P+  
N
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
P Substrate  
GND GND  
P Substrate  
GND  
GND  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
Figure 37. Example of monolithic IC structure  
13. Ceramic Capacitor  
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
14. Area of Safe Operation (ASO)  
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe  
Operation (ASO).  
15. Thermal Shutdown Circuit(TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always  
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction  
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. When the Tj falls below  
the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from  
heat damage.  
16. Over Current Protection Circuit (OCP)  
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
17. Disturbance light  
In a device where a portion of silicon is exposed to light such as in a WL-CSP, IC characteristics may be affected due  
to photoelectric effect. For this reason, it is recommended to come up with countermeasures that will prevent the chip  
from being exposed to light.  
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Ordering Information  
B
D
9
0
6
4
0
H
F
P
- C  
T
R
Package  
HFP : HRP7  
EFJ : HTSOP-J8  
Product Rank  
C : for Automotive  
Tape and Reel Information  
TR : Reel type embossed taping  
E2 : Reel type embossed taping  
Product  
Name  
Output Switch Current  
90640 : 4 A  
90620 : 2.5 A  
90610 : 1.25 A  
Marking Diagram  
HRP7 (TOP VIEW)  
Part Number Marking  
LOT Number  
Part Number Marking  
Output Switch Current  
4 A  
BD90640HFP  
BD90620HFP  
2.5 A  
1PIN MARK  
HTSOP-J8 (TOP VIEW)  
Part Number Marking  
LOT Number  
Part Number Marking  
D90640  
Output Switch Current  
4 A  
2.5 A  
1.25 A  
D90620  
D90610  
1PIN MARK  
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Physical Dimension, Tape and Reel Information  
Package Name  
HRP7  
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Physical Dimension, Tape and Reel Information  
Package Name  
HTSOP-J8  
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Revision History  
Date  
Revision  
Changes  
New Release  
6.Jan.2014  
001  
P.4 Description of OCP remove sentence Furthermore ~”  
P.6 Operating Output Switch Current Of Overcurrent Protection symbol change ISWLIMIT  
P.18 Parts List D1 Package change PMDS”  
.
7.Apr.2014  
002  
P.19 Parts List C2 change open”  
P.21 About Directions for Pattern Layout of PCB  
change and Signal GND (RT, VC,),”  
HRP Package version addition  
P.5 Recommended Operating ConditionsCapacitance of Input Capacitor addition  
P.17 Setting Phase Compensation CircuitChange SBD symbol  
P.28 I/O Equivalent CircuitChange MOS symbol  
17.Oct.2014  
21.Nov.2014  
003  
004  
The whole : Changing format  
Power Dissipation Note : additional detail of board condition  
Selection of the switching frequency setting : additional setting CRT  
Selection of the phase compensation circuit : additional settings to suitable position of the phase  
compensation  
15.Sep.2015  
005  
Marking diagram [HRP7] : delete BD90610HFP.  
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Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHM’s Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of  
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual  
ambient temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
QR code printed on ROHM Products label is for ROHM’s internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice-PAA-E  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2015 ROHM Co., Ltd. All rights reserved.  
Datasheet  
Buy  
BD90610EFJ-C - Web Page  
Distribution Inventory  
Part Number  
Package  
Unit Quantity  
BD90610EFJ-C  
HTSOP-J8  
2500  
Minimum Package Quantity  
Packing Type  
Constitution Materials List  
RoHS  
2500  
Taping  
inquiry  
Yes  

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BD90620UEFJ-C是一款内置高耐压功率MOSFET的开关稳压器,可通过外置电阻灵活设置开关频率。该产品的特点是支持的输入电压范围宽(3.5V ~ 36V,绝对最大额定电压:42V)、工作温度范围宽(-40℃ ~ +125℃),并且可与外部同步输入引脚输入的外部时钟同步工作。本系列产品中的BD90620EFJ-C是为提高生产效率而变更生产线后的型号。在新项目选型时,建议选择该型号。另外,在技术规格书中的保证特性并没有差异。除非另有说明,否则我们还会披露文档和设计模型的 BD90620EFJ-CE2 数据。
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BD90640EFJ-C

Switching Regulator,
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BD90640EFJ-E2

1ch Step-Down Switching Regulator
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BD90640EFJ-TR

1ch Step-Down Switching Regulator
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