BD9215F [ROHM]

Analog Circuit, 1 Func, PDSO28, SOP-28;


型号：	BD9215F
厂家：	ROHM
描述：	Analog Circuit, 1 Func, PDSO28, SOP-28 光电二极管
文件：	总5页 (文件大小：206K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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STRUCTURE

Silicon Monolithic Integrated Circuit

DC-AC Inverter Control IC

NAME OF PRODUCT

TYPE

ＢＤ９２１５Ｆ、ＢＤ９２１５ＦＶ

FUNCTION

・ 36V High voltage process

・ 1ch control with Full-Bridge

・ Lamp current and voltage sense feed back control

・ Sequencing easily achieved with Soft Start Control

・ Short circuit protection with Timer Latch

・ Under Voltage Lock Out

・ Mode-selectable the operating or stand-by mode by stand-by pin

・ For master IC, Synchronous operating with BD9898F/FV

・ BURST mode controlled by PWM and DC input

・ Output liner Control by external DC voltage

○Absolute Maximum Ratings（Ta = 25℃）

Parameter

Supply Voltage

Symbol

VCC

Limits

Unit

BST pin

BST

SW pin

BST-SW voltage difference

Operating Temperature Range

Storage Temperature Range

Maximum Junction Temperature

BST-SW

Topr

Tstg

Tjmax

-40～+85

-55～+150

+150

℃

749^*1(BD9215F)

1062^*2(BD9215FV)

Power Dissipation

^*1Pd derate at 6.0mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)

^*2Pd derate at 8.5mW/℃ for temperature above Ta = 25℃ (When mounted on a PCB 70.0mm×70.0mm×1.6mm)

〇Operating condition

Parameter

Symbol

Limits

16.0～30.0 ※

5.0～37.5

5.0～14.0

30～110

Unit

Supply voltage

VCC

BST

BST voltage

BST-SW voltage difference

DRIVER frequency

BST-SW

FOUT

fBCT

kHz

BCT oscillation frequency

0.05～1.00

※For Operation condition of Supply voltage, Please see NOTE FOR USE(4page), more information.

Status of this document

The Japanese version of this document is the official specification.

Please use the translation version of this document as a reference to expedite understanding of the official version.

If these are any uncertainty in translation version of this document, official version takes priority.

REV. C

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○Electric Characteristics（Ta=25℃、VCC=24V、STB=UVLO=3.0V）

Limits

Parameter

（（WHOLE DEVICE））

Operating current

Symbol

MIN.

TYP.

MAX.

Unit

Conditions

Icc1

Icc2

－

5.0

9.0

FOUT=60kHz, FB=GND, BST=OPEN

Stand-by current

140

μA

（（STAND BY CONTROL））

Stand-by voltage H

VstH

VstL

－

VCC

0.8

System ＯＮ

System ＯＦＦ

Stand-by voltage L

-0.3

（（UVLO BLOCK）））

Operating voltage (UVLO)

Hesteresis width (UVLO)

（（REG BLOCK））

Vuvlo

2.16

2.25

2.34

⊿Vuvlo

0.085

0.110

0.135

REG output voltage

VREG

IREG

7.35

7.50

－

7.65

－

REG source current

（（OSC BLOCK））

RT pin Voltage

VRT

ISS

1.05

1.7

1.50

2.2

1.95

2.7

μA

Soft start current

SS operation start Voltage

SS term END Voltage

SRT ON resistance

VSS_ST

VSS_ED

RSRT

0.18

1.35

－

0.20

1.50

0.22

1.65

170

（（BOSC BLOCK））

BOSC Max voltage

VBCTH

VBCTL

IBCT

1.94

0.4

2.06

0.6

fBCT=0.3kHz

VBCT=0.2V

BOSC Min voltage

0.5

BOSC constant current

BOSC frequency

1.35/BRT 1.5/BRT 1.65/BRT

fBCT

291

300

309

Hz (BRT=37.8kΩ BCT=0.047μF)

（（FEED BACK BLOCK））

IS threshold voltage 1

IS threshold voltage 2

VS threshold voltage

IS source current 1

VIS1

VIS2

1.225

－

1.25

VREFIN

1.25

－

1.275

VIS1

1.28

0.9

VREF applying voltage

VVS

1.22

－

IIS1

μA DUTY=2.2V

μA DUTY=0V IS=1.0V

μA

IS source current 2

IIS2

VS source current

IVS

－

0.9

IS COMP detect voltage 1

IS COMP detect voltage 2

VREF input voltage range

（（DUTY BLOCK））

VISCOMP1

VISCOMP2

VREFIN

0.606

－

0.625

0.50

－

0.644

－

VREFIN≧1.25V

VREFIN= 1V

0.6

1.6

No effect at VREF＞1.25V

High voltage

3.8

－

4.0

4.2

0.5

VDUTY-OUTH

VDUTY-OUTL

RDUTY-OUT_sink

RDUTY-OUT_source

Low voltage

DUTY-OUT sink resistance

DUTY-OUT source resistance

（（OUTPUT BLOCK））

LN output sink resistance

LN output source resistance

HN output sink resistance

HN output source resistance

MAX DUTY

150

300

600

RsinkLN

RsourceLN

RsinkHN

RsourceLN

MAX DUTY

TOFF

1.8

4.5

3.5

9.0

3.5

9.0

48.5

200

7.0

18.0

7.0

1.8

VBST-VSW=7.0V

FOUT=60kHz

4.5

18.0

49.5

400

62.1

46.0

100

57.9

OFF period

Drive output frequency

（（TIMER LATCH BLOCK））

Timer Latch setting voltage

Timer Latch setting current

（（COMP BLOCK））

FOUT

kHz RT=21k Ω

VCP

ICP

3.88

1.6

4.0

2.1

4.12

2.6

μA

VCOMPH

3.88

0.15

4.0

4.12

0.25

VSS＞1.65V

COMP over voltage detect voltage

Hysterisis width (COMP)

((Synchronous Block))

High voltage

⊿VCOMPH

0.20

VCT_SYNCH

VCT_SYNCL

RSYNC_OUT_sink

RSYNC_OUT_source

3.8

－

4.0

－

4.2

0.5

Low voltage

CT_SYNC_OUT sink resistance

CT_SYNC_OUT source resistance

150

300

400

（This product is not designed to be radiation-resistant.）

REV. C

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〇Package Dimensions

Device Mark

BD9215FV

BD9215F

１

Lot No.

SSOP-B28 (Unit:mm)

SOP28 (Unit:mm)

〇Pin Description

PIN No.

PIN NAME

PGND

LN2

FUNCTION

Ground for FET drivers

〇Block Diagram

NMOS FET driver

HN2

Lower rail voltage for HN2 output

Boot-Strap input for HN2 output

BURST signal output pin

SW2

BST2

DUTY_OUT

CT_SYNC_OUT CT synchronous signal output pin

External resistor from SRT to RT for

adjusting the start-up triangle oscillator

External resistor from RT to GND for

SRT

adjusting the triangle oscillator

GROUND

GND

BCT

BRT

DUTY

STB

External capacitor from BCT to GND for

adjusting the BURST triangle oscillator

External resistor from BRT to GND for

adjusting the BURST triangle oscillator

Control PWM mode and BURST mode

Stand-by switch

External capacitor from CP to GND for

Timer Latch

Reference voltage input pin for Error

amplifier

VREF

Error amplifier input

Error amplifier output

External capacitor from SS to GND for Soft

Start Control

Over voltage detect pin

COMP

VCC

UVLO

REG

BST1

SW1

HN1

LN1

Supply voltage input

External Under Voltage Lock Out

Internal regulator output

Boot-Strap input for HN1 output

Lower rail voltage for HN1 output

NMOS FET driver

REV. C

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〇NOTE FOR USE

１. This product is produced with strict quality control, but might be destroyed if used beyond its absolute

maximum ratings. Once IC is destroyed, failure mode will be difficult to determine, like short mode or

open mode. Therefore, physical protection countermeasure, like fuse is recommended in case operating

conditions go beyond the expected absolute maximum ratings.

２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is

within recommended operating range. The standard electrical characteristic values cannot be guaranteed

at other voltages in the operating ranges, however the variation will be small. When it is used in between

STB-UVLO Diode short etc., the IC can operate VCC≧9V. Please refer to a Technical Note in detail.

３. Mounting failures, such as misdirection or miscounts, may harm the device.

４. A strong electromagnetic field may cause the IC to malfunction.

５. The GND pin should be the location within ±0.3V compared with the PGND pin. ALL Pin (except BST1, BST2,

HN1, HN2,) Voltage should be under VCC voltage +0.3V

６. BD9215F, BD9215FV incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown

circuit (TSD circuit) is designed only to shut the IC off to prevent runaway thermal operation. It is not

designed to protect the IC or guarantee its operation of the thermal shutdown circuit is assumed.

７. When modifying the external circuit components, make sure to leave an adequate margin for external

components actual value and tolerance as well as dispersion of the IC.

８. About the external FET, theparasitic Capacitor may cause the gate voltage to change, when the drain voltage

is switching. Make sure to leave adequate margin for this IC variation.

９. Under operating CP charge (under error mode) analog dimming and burst dimming are not operate.

10. Under operating Slow Start Control (SS is less than 1.5V), It does not operate Timer Latch.

11. By STB voltage, BD9215F, BD9215FV are changed to 2 states. Therefore, do not input STB pin voltage between

one state and the other state (0.8～2.0V).

12. The pin connected a connector need to connect to the resistor for electrical surge destruction.

13. This IC is a monolithic IC which (as shown is Fig-1) has P⁺substrate and between the various pins.

A P-N junction is formed from this P layer of each pin. For example, the relation between each potential

is as follows,

○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)

○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)

Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can

result in mutual interference among circuits as well as operation faults and physical damage. Accordingly

you must not use methods by which parasitic diodes operate, such as applying a voltage that is lower than

the GND (P substrate) voltage to an input pin.

Transistor (NPN)

Resistance

(PinA)

(PinB)

Ｃ

GND

P^＋

Ｎ

P substrate

GND

Parasitic diode

P substrate

GND

Parasitic diode

(PinB)

(PinA)

Ｂ

Ｃ

Ｅ

Parasitic diode

GND

Other adjacent components

Parasitic diode

Fig-1 Simplified structure of a Bipolar IC

REV. C

Notice

N o t e s

No copying or reproduction of this document, in part or in whole, is permitted without the

consent of ROHM Co.,Ltd.

The content speciﬁed herein is subject to change for improvement without notice.

The content speciﬁed herein is for the purpose of introducing ROHM's products (hereinafter

"Products"). If you wish to use any such Product, please be sure to refer to the speciﬁcations,

which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein

illustrate the standard usage and operations of the Products. The peripheral conditions must

be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information speciﬁed in this document.

However, should you incur any damage arising from any inaccuracy or misprint of such

information, ROHM shall bear no responsibility for such damage.

The technical information speciﬁed herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or

implicitly, any license to use or exercise intellectual property or other rights held by ROHM and

other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the

use of such technical information.

The Products speciﬁed in this document are intended to be used with general-use electronic

equipment or devices (such as audio visual equipment, ofﬁce-automation equipment, commu-

nication devices, electronic appliances and amusement devices).

The Products speciﬁed in this document are not designed to be radiation tolerant.

While ROHM always makes efforts to enhance the quality and reliability of its Products, a

Product may fail or malfunction for a variety of reasons.

Please be sure to implement in your equipment using the Products safety measures to guard

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The Products are not designed or manufactured to be used with any equipment, device or

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R0039

BD9215F [ROHM]

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