BD9E200FP4-Z [ROHM]

BD9E200FP4-Z是一款内置低导通电阻功率MOSFET的单通道同步整流降压型DC-DC转换器。利用轻负载模式控制,可提高轻负载时的效率,因此非常适用于需要降低待机功耗的设备。;
BD9E200FP4-Z
型号: BD9E200FP4-Z
厂家: ROHM    ROHM
描述:

BD9E200FP4-Z是一款内置低导通电阻功率MOSFET的单通道同步整流降压型DC-DC转换器。利用轻负载模式控制,可提高轻负载时的效率,因此非常适用于需要降低待机功耗的设备。

DC-DC转换器
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中文:  中文翻译
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Datasheet  
4.5 V to 26 V Input, 2.0 A Integrated MOSFET  
Single Synchronous Buck DC/DC Converter  
BD9E200FP4-Z  
General Description  
Key Specifications  
Input Voltage Range:  
Output Voltage Range:  
Output Current:  
BD9E200FP4-Z is a single synchronous buck DC/DC  
converter with built-in low on-resistance power MOSFETs.  
The Light Load Mode control provides excellent efficiency  
characteristics in light-load conditions, which make the  
product ideal for equipment, and devices that demand  
minimal standby power consumption. BD9E200FP4-Z is a  
current mode control DC/DC converter and features good  
transient response. It includes internal phase compensation.  
It achieves the high power density and offers a small  
footprint on the PCB by employing small package.  
4.5 V to 26.0 V  
VINx0.1 or 0.7 V to VINx0.8 V  
2 A (Max)  
Switching Frequency:  
500 kHz (Typ)  
High Side FET ON Resistance:  
Low Side FET ON Resistance:  
Shutdown Current:  
185 mΩ (Typ)  
98 mΩ (Typ)  
4 μA (Typ)  
Operating Quiescent Current:  
95 μA (Typ)  
Package  
TSOT23-6L  
W (Typ) x D (Typ) x H (Max)  
2.8 mm x 2.9 mm x 0.95 mm  
Features  
Single Synchronous Buck DC/DC Converter  
Light Load Mode Control  
Frequency Spread Spectrum  
Internal Phase Compensation  
Over Voltage Protection (OVP)  
Over Current Protection (OCP)  
Short Circuit Protection (SCP)  
Thermal Shutdown Protection (TSD)  
Under Voltage Lockout Protection (UVLO)  
Reduced External Diode  
TSOT23-6L  
TSOT23-6L Package  
Applications  
Home Appliance Products (i.e., Air Conditioner,  
Refrigerator)  
Secondary Power Supply and Adapter Equipment  
Telecommunication Devices  
Typical Application Circuit  
BD9E200FP4  
VEN  
VIN  
EN  
VIN  
BOOT  
SW  
0.1μF  
L
CIN  
VOUT  
RFB2  
CFB  
COUT  
FB  
RFB1  
GND  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
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Pin Configuration  
(TOP VIEW)  
GND  
SW  
1
2
3
6
5
BOOT  
EN  
FB  
VIN  
4
Pin Description  
Pin No. Pin Name  
Function  
1
2
GND  
Ground pins for the control circuit and output stage of the switching regulator.  
Switch pin. This pin is connected to the source of the High Side FET and the drain of the Low  
Side FET. Connect a bootstrap capacitor of 0.1 µF between this pin and the BOOT pin. In  
addition, connect an inductor considering the direct current superimposition characteristic.  
SW  
Power supply pin. Connecting 0.1 µF (Typ) and 10 µF (Typ) ceramic capacitors is  
recommended. The detail of a selection is described in Selection of Components Externally  
Connected 1. Input Capacitor.  
3
VIN  
Output voltage feedback pin. See Selection of Components Externally Connected 3. Output  
Voltage Setting, FB Capacitor for the output voltage setting.  
4
5
6
FB  
EN  
Enable pin. The device starts up with setting VEN to 1.21 V (Typ) or more. The device enters  
the shutdown mode with setting VEN to 1.19 V (Typ) or less. When this pin is open, this pin is  
pull-up to IC internal regulator and the device is enabled.  
Pin for bootstrap. Connect a bootstrap capacitor of 0.1 µF (Typ) between this pin and the SW  
pin. The voltage of this pin is the gate drive voltage of the High Side FET.  
BOOT  
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Block Diagram  
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Description of Blocks  
1. REG  
This block generates the internal regulator voltage.  
2. BOOTREG  
Block creating gate drive voltage.  
3. SOFT START  
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the  
prevention of output voltage overshoot and inrush current. The internal soft start time is 5 ms (Typ).  
4. ERRAMP  
This is the error amplifier. This block compares the FB voltage (VFB) and the internal reference voltage. The output voltage  
is set by the FB external resistors.  
5. On-time Comparator  
The On-time Comparator compares the Error Amplifier output voltage and the reference voltage compensated by SW  
average voltage. When the Error Amplifier output voltage becomes higher than the reference voltage, the output turns  
low and reports to the On-time Circuit that the output voltage has dropped below the control voltage.  
6. On-time Circuit  
This block generates the High Side FET on-time signal. Generates an on-time signal set by the On-time comparator  
output, OSC signal and Current Sense Comparator output.  
7. Current Sense Comparator  
This is a comparator that compares the ERRAMP signal with the current sense signal compensated by ramp signal.  
8. UVLO  
The UVLO block is for under voltage lockout protection. The device is shutdown when input voltage (VIN) falls to 3.9 V  
(Typ) or less. The threshold voltage has the 350 mV (Typ) hysteresis.  
9. TSD  
The TSD block is for thermal protection. The device is shutdown when the junction temperature Tj reaches to 175 °C  
(Typ) or more. The device is automatically restored to normal operation with a hysteresis of 25 °C (Typ) when the Tj goes  
down.  
10. EN  
The EN Block is for enabling or shutting down the IC. The device operate when the EN voltage is 1.21 V (Typ) or more  
and shutdown when EN voltage is 1.19 V (Typ) or less. When this pin is open, this pin is pull-up to IC internal regulator  
and the device is enabled.  
11. OVP  
The OVP block is for over voltage protection. When the FB voltage (VFB) exceeds 120 % (Typ) or more of FB threshold  
voltage VFBTH, the output MOSFETs are turned off. After VFB falls 115 % (Typ) or less of VFBTH, the device is returned to  
normal operation condition.  
12. HOCP  
This block is for over current protection of the High Side FET. When the current that flows through the High Side FET  
reaches the value of over current limit, it turns off the High Side FET and turns on the Low Side FET.  
13. SCP  
This block is for short circuit protection. After soft start is completed and in condition where VFB is 70 % (Typ) of 0.596 V  
or less and remained there for 128 μs (Typ), the device is shutdown for 32.8 ms (Typ) and subsequently initiates a restart.  
14. LS MOSFET Current Limit  
This circuit is a comparator that monitors the inductor current. When inductor current falls below 0 A (Typ) while the Low  
Side FET is on, it turns off the Low Side FET.  
15. OSC  
This block generates the internal oscillation frequency.  
16. Spread Spectrum  
This block introduces Spread Spectrum Operation.  
17. DRIVER LOGIC  
This block controls the switching operation and protection function operation.  
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Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Symbol  
Rating  
Unit  
Input Voltage  
VIN  
VSW  
-0.3 to +30  
-0.3 to VIN+0.3  
-3  
V
V
SW Voltage  
SW Voltage (5 ns pulse width)  
Voltage from GND to BOOT  
Voltage from SW to BOOT  
FB Voltage  
VSWAC  
VBOOT  
ΔVBOOT  
VFB  
V
-0.3 to +35  
-0.3 to +7  
-0.3 to +3  
-0.3 to +3  
2
V
V
V
EN Voltage  
VEN  
V
Output Current  
IOUT  
A
Maximum Junction Temperature  
Tjmax  
150  
°C  
Storage Temperature Range  
Tstg  
-55 to +150  
°C  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2:  
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by  
increasing board size and copper area so as not to exceed the maximum junction temperature rating.  
Thermal Resistance(Note 1)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 3)  
2s2p(Note 4)  
TSOT23-6L  
Junction to Ambient  
Junction to Top Characterization Parameter(Note 2)  
θJA  
229.5  
45  
117.9  
40  
°C/W  
°C/W  
ΨJT  
(Note 1) Based on JESD51-2A (Still-Air), using a BD9E200FP4 Chip.  
(Note 2) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface  
of the component package.  
(Note 3) Using a PCB board based on JESD51-3.  
(Note 4) Using a PCB board based on JESD51-7.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3 mm x 76.2 mm x 1.57 mmt  
Top  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
114.3 mm x 76.2 mm x 1.6 mmt  
2 Internal Layers  
4 Layers  
Top  
Copper Pattern  
Bottom  
Copper Pattern  
74.2 mm x 74.2 mm  
Thickness  
70 μm  
Copper Pattern  
Thickness  
35 μm  
Thickness  
70 μm  
Footprints and Traces  
74.2 mm x 74.2 mm  
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Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Input Voltage  
VIN  
Topr  
IOUT  
4.5  
-40  
0
-
-
-
-
26.0  
+85  
V
°C  
A
Operating Temperature(Note 1)  
Output Current(Note 1)  
Output Voltage Setting(Note 2)  
2
VOUT  
0.7  
VINx0.8  
V
(Note 1) Tj must be 150 °C or less under the actual operating environment. Life time is derated at junction temperature greater than 125 °C.  
(Note 2) Please use within the range of VOUT ≥ VIN × 0.1 [V].  
Electrical Characteristics (Unless otherwise specified Ta = 25 °C, VIN = 12 V, VEN = 3 V)  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
Conditions  
Input Supply  
Shutdown Current  
ISDN  
IQ  
-
-
4
15  
µA  
µA  
VEN = 0 V  
IOUT = 0 A,  
No switching  
Operating Quiescent Current  
95  
175  
UVLO Threshold Voltage  
UVLO Hysteresis Voltage  
Enable  
VUVLO  
3.7  
3.9  
4.1  
V
VIN falling  
VUVLOHYS  
300  
350  
400  
mV  
EN Threshold Voltage High  
EN Threshold Voltage Low  
EN Input Current(Note 3)  
EN Input Hysteresis Current(Note 3)  
VENH  
VENL  
IEN  
-
1.21  
1.19  
0.7  
1.28  
V
V
VEN rising  
1.10  
-
-
-
VEN falling  
VEN = 1 V  
-
-
µA  
µA  
IEN_HYS  
1.50  
IEN_2V – IEN_1V  
Reference Voltage, Error Amplifier, Soft Start  
FB Threshold Voltage  
FB Input Current  
VFBTH  
IFB  
tSS  
0.587  
-
0.596  
-
0.605  
100  
V
nA  
ms  
VFB = 0.7 V  
Soft Start Time  
3.5  
5.0  
6.5  
SW (MOSFET)  
Switching Frequency  
Maximum Duty Ratio  
High Side FET ON Resistance  
Low Side FET ON Resistance  
Protection  
fSW  
390  
500  
-
590  
-
kHz  
%
DMAX  
RONH  
RONL  
80  
-
185  
98  
270  
140  
mΩ  
mΩ  
VBOOT - VSW = 5 V  
No switching  
-
High Side Over Current Limit(Note 3)  
IHOCP  
2.5  
3.2  
3.9  
A
(Note 3) No tested on outgoing inspection.  
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Typical Performance Curves  
16  
14  
12  
10  
8
200  
180  
160  
140  
120  
100  
80  
6
60  
4
40  
2
VIN = 12 V  
VIN = 12 V  
20  
0
0
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 1. Shutdown Current vs Temperature  
Figure 2. Operating Quiescent Current vs Temperature  
4.50  
1.29  
VIN rising  
VIN falling  
VEN rising  
1.27  
4.40  
4.30  
4.20  
4.10  
4.00  
3.90  
3.80  
3.70  
VEN falling  
1.25  
1.23  
1.21  
1.19  
1.17  
1.15  
1.13  
1.11  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 3. UVLO Threshold Voltage vs Temperature  
Figure 4. EN Threshold Voltage vs Temperature  
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Typical Performance Curves – continued  
3.00  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
1.75  
1.40  
1.05  
0.70  
EN = 1 V  
0.35  
0.00  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 5. EN Input Current vs Temperature  
Figure 6. EN Input Hysteresis Current vs Temperature  
0.605  
0.602  
0.599  
0.596  
0.593  
0.590  
0.587  
100  
80  
60  
40  
20  
0
-20  
-40  
-60  
-80  
-100  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 7. FB Threshold Voltage vs Temperature  
Figure 8. FB Input Current vs Temperature  
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Typical Performance Curves – continued  
650  
600  
550  
500  
450  
400  
350  
6.50  
6.00  
5.50  
5.00  
4.50  
4.00  
3.50  
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 10. Switching Frequency vs Temperature  
Figure 9. Soft Start Time vs Temperature  
100  
95  
90  
85  
80  
400  
350  
300  
250  
200  
150  
100  
50  
0
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 11. Maximum Duty Ratio vs Temperature  
Figure 12. High Side FET ON Resistance vs Temperature  
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Typical Performance Curves – continued  
200  
175  
150  
125  
100  
75  
4.20  
3.95  
3.70  
3.45  
3.20  
2.95  
2.70  
2.45  
2.20  
50  
25  
0
-40  
-20  
0
20  
40  
60  
80  
-40  
-20  
0
20  
40  
60  
80  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 13. Low Side FET ON Resistance vs Temperature  
Figure 14. High Side Over Current Limit vs Temperature  
5.100  
5.075  
5.050  
5.025  
5.000  
4.975  
5.100  
5.075  
5.050  
5.025  
5.000  
4.975  
IOUT = 0 A  
4.950  
4.950  
VIN = 24 V  
IOUT = 1 A  
VIN = 12 V  
4.925  
4.925  
IOUT = 2 A  
4.900  
4.900  
6.0  
12.0  
18.0  
24.0  
0.0  
0.5  
1.0  
1.5  
2.0  
INPUT Voltage : VIN [V]  
Output Current : IOUT [A]  
Figure 15. Output Voltage vs Output Current  
Figure 16. Output Voltage vs Input Voltage  
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Typical Performance Curves – continued  
Time: 2 ms/div  
VIN: 10 V/div  
Time: 2 s/div  
VIN: 10 V/div  
VEN: 2 V/div  
VEN: 2 V/div  
VOUT: 2 V/div  
VOUT: 2 V/div  
Figure 17. Start-up at No load: VEN = 0 V to 3 V  
(VIN = 12 V, VOUT = 5 V)  
Figure 18. Shutdown at No Load VEN = 3 V to 0 V  
(VIN = 12 V, VOUT = 5 V)  
Time: 1 ms/div  
Time: 2 ms/div  
VIN: 10 V/div  
VIN: 10 V/div  
VEN: 2 V/div  
VEN: 2 V/div  
VOUT: 2 V/div  
VOUT: 2 V/div  
Figure 20. Shutdown at RLOAD = 2.5 Ω: VEN = 3 V to 0 V  
(VIN = 12 V, VOUT = 5 V)  
Figure 19. Start-up at RLOAD = 2.5 Ω: VEN = 0 V to 3 V  
(VIN = 12 V, VOUT = 5 V)  
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Typical Performance Curves – continued  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
-60 -40 -20  
0
20 40 60 80 100  
-60 -40 -20  
0
20 40 60 80 100  
Temperature : Ta [°C]  
Temperature : Ta [°C]  
Figure 21. Output Current vs Temperature(Note 1)  
Figure 22. Output Current vs Temperature(Note 1)  
Operating Range: Tj < 150 °C (VIN = 12 V, VOUT = 3.3 V)  
Operating Range: Tj < 150 °C (VIN = 12 V, VOUT = 5 V)  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
-60 -40 -20  
0
20 40 60 80 100  
Temperature : Ta [°C]  
Figure 23. Output Current vs Temperature(Note 1)  
Operating Range: Tj < 150 °C (VIN = 24 V, VOUT = 12 V)  
(Note 1) Measured on FR-4 board 67.5 mm x 67.5 mm, Copper Thickness: Top and Bottom 70 μm, 2 Internal Layers 35 μm.  
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BD9E200FP4-Z  
Typical Performance Curves – continued  
2.50  
2.00  
1.50  
2.50  
2.00  
1.50  
1.00  
0.50  
0.00  
1.00  
Ta = -40 °C  
Ta = -40 °C  
Ta = +25 °C  
Ta = +85 °C  
0.50  
Ta = +25 °C  
Ta = +85 °C  
0.00  
0
5
10  
15  
20  
25  
30  
0
5
10  
15  
20  
25  
30  
Input Voltage : VIN [V]  
Input Voltage : VIN [V]  
Figure 24. Output Current vs Input Voltage(Note 1) (Note 2)  
Operating Range: Tj < 150 °C (VOUT = 3.3 V)  
Figure 25. Output Current vs Input Voltage(Note 1) (Note 2)  
Operating Range: Tj < 150 °C (VOUT = 5.0 V)  
(Note 1) Measured on FR-4 board 67.5 mm x 67.5 mm, Copper Thickness: Top and Bottom 70 μm, 2 Internal Layers 35 μm.  
(Note 2) At low input voltage and high output voltage setting, IOUT ability is reduced due to increase in ON resistance losses.  
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Function Explanation  
1. Basic Operation  
(1) DC/DC Converter Operation  
BD9E200FP4-Z is a synchronous rectifying step-down switching regulator that achieves faster transient response by  
employing current mode PWM control system. It utilizes switching operation in PWM (Pulse Width Modulation) mode  
for heavier load, while it utilizes Light Load Mode control for lighter load to improve efficiency.  
Light Load Mode Control  
PWM Control  
Fixed PWM Mode Control  
Output Current [A]  
Figure 26. Efficiency Image between Light Load Mode Control and PWM Mode Control  
(2) Enable Control  
The startup and shutdown can be controlled by the EN voltage (VEN). When VEN becomes 1.21 V (Typ) or more, the  
internal circuit is activated and the device starts up. When VEN becomes 1.19 V (Typ) or less, the device is shutdown.  
To enable shutdown control with the EN pin, the shutdown interval must be set to 100 µs or longer. When this pin is  
open, this pin is pull-up to IC internal regulator and the device is enabled.  
VIN  
0 V  
VEN  
VENH  
VENL  
0 V  
VOUT  
0 V  
Startup  
Shutdown  
Figure 27. Startup and Shutdown with Enable Control Timing Chart  
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1. Basic Operation – continued  
(3) Soft Start  
When VEN goes high, soft start function operates and output voltage gradually rises. This soft start function can prevent  
overshoot of the output voltage and excessive inrush current. The soft start time tSS is 5 ms (Typ).  
Figure 28. Soft Start Timing Chart  
(4) Frequency Spread Spectrum  
When soft start function (SSEND) is completed, Spread Spectrum function activates and then reducing the EMI noise  
level. When the Spread Spectrum function is activated, the switching frequency varies with triangular wave by ±6 %  
(Typ) from center frequency 500 kHz (Typ). The period of the triangular wave is 1.024 ms (Typ).  
Figure 29. Frequency Spread Spectrum  
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Function Explanation – continued  
2. Protection  
The protection circuits are intended for prevention of damage caused by unexpected accidents. Do not use the  
continuous protection.  
(1) Over Current Protection (OCP) / Short Circuit Protection (SCP)  
Over Current Protection (OCP) restricts the flowing current through the High Side FET for every switching period. SW  
switching is masked by 3clock cycles when OCP is detected.  
Short Circuit Protection (SCP) function is a Hiccup mode. When VFB remains VFBTH x 70 % or less for 128 µs (Typ), the  
device stops the switching operation for 32.8 ms (Typ). After that, the device restarts. SCP does not operate during the  
soft start even if the device is in the SCP conditions. Do not exceed the maximum junction temperature (Tjmax = 150 °C)  
during OCP and SCP operation.  
Table 1. The Operating Condition of OCP and SCP  
VEN  
VFB  
Start-up  
OCP  
SCP  
≤ VFBTH x 70 % (Typ)  
> VFBTH x 70 % (Typ)  
≤ VFBTH x 70 % (Typ)  
-
During Soft Start  
Enable  
Enable  
Enable  
Disable  
Disable  
Disable  
Enable  
Disable  
1.21 V (Typ)  
1.19 V (Typ)  
Complete Soft Start  
Shutdown  
Figure 30. OCP and SCP Timing Chart  
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2. Protection - continued  
(2) Under Voltage Lockout Protection (UVLO)  
When input voltage VIN falls to 3.9 V (Typ) or less, the device is shutdown. When VIN becomes 4.25 V (Typ) or more,  
the device starts up. The hysteresis is 350 mV (Typ).  
Figure 31. UVLO Timing Chart  
The under voltage lock-out protection (UVLO) threshold voltages can be set higher than the internal UVLO threshold  
voltage by the resistor divider network connected between the VIN and EN pins.  
Resistor divider network can be computed as follows  
where as  
VSTART, VSTOP : external VIN UVLO setting  
VSTART - VSTOP = 500 mV (Typ)  
VENL = 1.19 V (Typ)  
VENH = 1.21 V (Typ)  
IEN = 0.7 μA (Typ)  
IEN_HYS = 1.5 μA (Typ)  
Figure 32. External UVLO Setting  
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2. Protection - continued  
(3) Thermal Shutdown Protection (TSD)  
Thermal shutdown circuit prevents heat damage to the IC. The device should always operate within the IC’s maximum  
junction temperature rating (Tjmax = 150 °C). However, if it continues exceeding the rating and the junction temperature  
Tj rises to 175 °C (Typ), the TSD circuit is activated and it turns the output MOSFETs off. When the Tj falls below the  
TSD threshold, the circuits are automatically restored to normal operation. The TSD threshold has a hysteresis of 25 °C  
(Typ). Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings. Therefore, under  
no circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from  
heat damage.  
(4) Over Voltage Protection (OVP)  
When the FB voltage VFB exceeds VFBTH x 120 % (Typ) or more, the output MOSFETs are turned off to prevent the  
increase in the output voltage. After the VFB falls VFBTH x 115 % (Typ) or less, the output MOSFETs are returned to  
normal operation condition. Switching operation restarts after VFB falls below VFBTH (Typ).  
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Application Examples  
1. VIN = 9 V to 24 V, VOUT = 3.3 V  
Table 2. Specification of Application  
Parameter  
Input Voltage  
Symbol  
Specification Value  
9 V to 24 V (Typ)  
3.3 V (Typ)  
2 A  
VIN  
VOUT  
IOUTMAX  
Ta  
Output Voltage  
Maximum Output Current  
Temperature  
25 °C  
Figure 33. Application Circuit  
Table 3. Recommended Component Values  
Size Code  
Part No.  
Value  
Part Name  
Manufacturer  
(mm)  
L1  
(Note 1)  
10 μH  
1217AS-H-100M  
8080  
Murata  
Murata  
Murata  
Murata  
-
C1  
0.1 μF (50 V, X5R, ±10 %)  
10 μF (100 V, X7S, ±10 %)  
0.1 μF (50 V, X5R, ±10 %)  
Short  
GRM155R61H104KE14  
GRM32EC72A106KE05  
GRM155R61H104KE14  
-
1005  
3225  
1005  
-
(Note 2)  
C2  
(Note 3)  
C4  
R6  
(Note 4)  
C5  
22 μF (25 V, X7R, ±10 %)  
22 μF (25 V, X7R, ±10 %)  
-
GRM32ER71E226KE15  
GRM32ER71E226KE15  
-
3225  
3225  
-
Murata  
Murata  
-
(Note 4)  
C6  
(Note 4)  
C7  
C8  
R7  
56 pF (50 V, C0G, ±5 %)  
Short  
GRM0335C1H560JA01D  
-
0603  
-
Murata  
-
(Note 5)  
R1  
Short  
-
-
-
R2  
R3  
100 kΩ (1 %, 1/16 W)  
22 kΩ (1 %, 1/16 W)  
510 kΩ (1 %, 1/16 W)  
82 kΩ (1 %, 1/16 W)  
MCR01MZPF1003  
MCR01MZPF2202  
MCR01MZPF5103  
MCR01MZPF8202  
1005  
1005  
1005  
1005  
ROHM  
ROHM  
ROHM  
ROHM  
(Note 6)  
R4  
(Note 6)  
R5  
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin.  
(Note 2) For the input capacitor C2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 3.0 μF.  
(Note 3) For the bootstrap capacitor C4, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of  
no less than 0.022 μF.  
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C5, C6 and  
C7, the loop response characteristics may change. Confirm the actual application.  
(Note 5) R1 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R1, it is possible to measure the frequency response  
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.  
(Note 6) R4 and R5 are used to set VIN UVLO to higher voltage setting. Calculation is explained in page 17.  
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1. VIN = 9 V to 24 V, VOUT = 3.3 V – continued  
100  
95  
90  
85  
80  
75  
70  
65  
60  
Time: 2 µs/div  
VOUT: 10 mV/div (AC coupled)  
VSW: 3 V/div  
VIN = 12 V  
VIN = 24 V  
55  
50  
45  
40  
1.0  
10.0  
100.0  
1000.0  
Output Current : IOUT [mA]  
Figure 34. Efficiency vs Output Current  
Figure 35. Output Ripple Voltage (VIN = 12 V, IOUT = 2 A)  
80  
60  
180  
135  
90  
Time: 200 µs/div  
40  
VOUT: 100 mV/div (AC coupled)  
20  
45  
0
0
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
Gain  
IOUT: 0.5 A/div  
Phase  
1
10  
100  
1000  
Frequency [kHz]  
Figure 37. Load Transient Response  
(VIN = 12 V, IOUT = 0.5 A to 1.5 A)  
Figure 36. Frequency Characteristics  
(VIN = 12 V, IOUT = 2 A)  
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Application Examples – continued  
2. VIN = 9 V to 24 V, VOUT = 5 V  
Table 4. Specification of Application  
Parameter  
Input Voltage  
Symbol  
Specification Value  
9 V to 24 V (Typ)  
5 V (Typ)  
VIN  
VOUT  
IOUTMAX  
Ta  
Output Voltage  
Maximum Output Current  
Temperature  
2 A  
25 °C  
Figure 38. Application Circuit  
Table 5. Recommended Component Values  
Size Code  
Part No.  
Value  
Part Name  
Manufacturer  
(mm)  
L1  
(Note 1)  
15 μH  
1217AS-H-150M  
8080  
Murata  
Murata  
Murata  
Murata  
-
C1  
0.1 μF (50 V, X5R, ±10 %)  
10 μF (100 V, X7S, ±10 %)  
0.1 μF (50 V, X5R, ±10 %)  
Short  
GRM155R61H104KE14  
GRM32EC72A106KE05  
GRM155R61H104KE14  
-
1005  
3225  
1005  
-
(Note 2)  
C2  
(Note 3)  
C4  
R6  
(Note 4)  
C5  
22 μF (25 V, X7R, ±10 %)  
22 μF (25 V, X7R, ±10 %)  
-
GRM32ER71E226KE15  
GRM32ER71E226KE15  
-
3225  
3225  
-
Murata  
Murata  
-
(Note 4)  
C6  
(Note 4)  
C7  
C8  
R7  
75 pF (50 V, C0G, ±5 %)  
Short  
GRM0335C1H750JA01D  
-
0603  
-
Murata  
-
(Note 5)  
R1  
0.82 kΩ (1 %, 1/16 W)  
110 kΩ (1 %, 1/16 W)  
15 kΩ (1 %, 1/16 W)  
510 kΩ (1 %, 1/16 W)  
82 kΩ (1 %, 1/16 W)  
MCR01MZPF8200  
MCR01MZPF1103  
MCR01MZPF1502  
MCR01MZPF5103  
MCR01MZPF8202  
1005  
1005  
1005  
1005  
1005  
ROHM  
ROHM  
ROHM  
ROHM  
ROHM  
R2  
R3  
(Note 6)  
R4  
(Note 6)  
R5  
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin.  
(Note 2) For the input capacitor C2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 3.0 μF.  
(Note 3) For the bootstrap capacitor C4, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of  
no less than 0.022 μF.  
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C5, C6 and  
C7, the loop response characteristics may change. Confirm the actual application.  
(Note 5) R1 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R1, it is possible to measure the frequency response  
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.  
(Note 6) R4 and R5 are used to set VIN UVLO to higher voltage setting. Calculation is explained in page 17.  
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2. VIN = 9 V to 24 V, VOUT = 5 V – continued  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
Time: 2 µs/div  
VOUT: 10 mV/div (AC coupled)  
VSW: 3 V/div  
50  
45  
40  
VIN = 12 V  
VIN = 24 V  
1.0  
10.0  
100.0  
1000.0  
Output Current : IOUT [mA]  
Figure 39. Efficiency vs Output Current  
Figure 40. Output Ripple Voltage (VIN = 12 V, IOUT = 2 A)  
80  
60  
180  
135  
90  
Time: 200 µs/div  
40  
VOUT: 100 mV/div (AC coupled)  
20  
45  
0
0
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
Gain  
IOUT: 0.5 A/div  
Phase  
1
10  
100  
1000  
Frequency [kHz]  
Figure 42. Load Transient Response  
(VIN = 12 V, IOUT = 0.5 A to 1.5 A)  
Figure 41. Frequency Characteristics  
(VIN = 12 V, IOUT = 2 A)  
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Application Examples - continued  
3. VIN = 24 V, VOUT = 12 V  
Table 6. Specification of Application  
Parameter  
Input Voltage  
Symbol  
Specification Value  
24 V (Typ)  
12 V (Typ)  
2 A  
VIN  
VOUT  
IOUTMAX  
Ta  
Output Voltage  
Maximum Output Current  
Temperature  
25 °C  
Figure 43. Application Circuit  
Table 7. Recommended Component Values  
Size Code  
Part No.  
Value  
Part Name  
Manufacturer  
(mm)  
L1  
(Note 1)  
22 μH  
1217AS-H-220M  
8080  
Murata  
Murata  
Murata  
Murata  
-
C1  
0.1 μF (50 V, X5R, ±10 %)  
10 μF (100 V, X7S, ±10 %)  
0.1 μF (50 V, X5R, ±10 %)  
Short  
GRM155R61H104KE14  
GRM32EC72A106KE05  
GRM155R61H104KE14  
-
1005  
3225  
1005  
-
(Note 2)  
C2  
(Note 3)  
C4  
R6  
(Note 4)  
C5  
22 μF (25 V, X7R, ±10 %)  
22 μF (25 V, X7R, ±10 %)  
-
GRM32ER71E226KE15  
GRM32ER71E226KE15  
-
3225  
3225  
-
Murata  
Murata  
-
(Note 4)  
C6  
(Note 4)  
C7  
C8  
R7  
100 pF (50 V, C0G, ±5 %)  
Short  
GRM0335C1H101JA01D  
-
0603  
-
Murata  
-
(Note 5)  
R1  
Short  
-
-
-
R2  
R3  
130 kΩ (1 %, 1/16 W)  
6.8 kΩ (1 %, 1/16 W)  
470 kΩ (1 %, 1/16 W)  
33 kΩ (1 %, 1/16 W)  
MCR01MZPF1303  
MCR01MZPF6801  
MCR01MZPF4703  
MCR01MZPF3302  
1005  
1005  
1005  
1005  
ROHM  
ROHM  
ROHM  
ROHM  
(Note 6)  
R4  
(Note 6)  
R5  
(Note 1) In order to reduce the influence of high frequency noise, connect a 0.1 μF ceramic capacitor C1 as close as possible to the VIN pin and the GND pin.  
(Note 2) For the input capacitor C2, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 3.0 μF.  
(Note 3) For the bootstrap capacitor C4, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of  
no less than 0.022 μF.  
(Note 4) In case of changing the actual capacitance value due to temperature characteristics, DC bias characteristics, etc. of the output capacitor C5, C6 and  
C7, the loop response characteristics may change. Confirm the actual application.  
(Note 5) R1 is an option, used for feedback’s frequency response measurement. By inserting a resistor at R1, it is possible to measure the frequency response  
(phase margin) using a FRA. However, the resistor is not used in actual application, use this resistor pattern in short-circuit mode.  
(Note 6) R4 and R5 are used to set VIN UVLO to higher voltage setting. Calculation is explained in page 17.  
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3. VIN = 24 V, VOUT = 12 V – continued  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
50  
45  
40  
Time: 2 µs/div  
VOUT: 10 mV/div (AC coupled)  
VSW: 10 V/div  
1.0  
10.0  
100.0  
1000.0  
Output Current : IOUT [mA]  
Figure 44. Efficiency vs Output Current  
Figure 45. Output Ripple Voltage (VIN = 24 V, IOUT = 2 A)  
80  
60  
180  
135  
90  
Time: 200 µs/div  
40  
VOUT: 300 mV/div (AC coupled)  
20  
45  
0
0
-20  
-40  
-60  
-80  
-45  
-90  
-135  
-180  
Gain  
IOUT: 0.5 A/div  
Phase  
1
10  
100  
1000  
Frequency [kHz]  
Figure 46. Frequency Characteristics  
Figure 47. Load Transient Response  
(VIN = 24 V, IOUT = 0.5 A to 1.5 A)  
(VIN = 24 V, IOUT = 2 A)  
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Selection of Components Externally Connected  
Contact us if not use the recommended component values in Application Examples.  
1. Input Capacitor  
Use ceramic type capacitor for the input capacitor. The input capacitor is used to reduce the input ripple noise and it is  
effective by being placed as close as possible to the VIN pin. Set the capacitor value so that it does not fall to 3 μF  
considering the capacitor value variances, temperature characteristics, DC bias characteristics, aging characteristics, and  
etc. The PCB layout and the position of the capacitor may lead to IC malfunction. Refer to the notes on the PCB layout on  
PCB Layout Design when designing PCB layout. In addition, the capacitor with value 0.1 μF can be connected as close as  
possible to the VIN pin and the GND pin in order to reduce the high frequency noise.  
2. Output LC Filter  
In order to supply a continuous current to the load, the DC/DC converter requires an LC filter for smoothing the output  
voltage. For recommended inductance, use the values listed in Table 8.  
VIN  
IL  
Inductor saturation current > IOUTMAX + IL/2  
L
VOUT  
Driver  
IL  
Maximum Output Current IOUTMAX  
COUT  
t
Figure 48. Waveform of Inductor Current  
Figure 49. Output LC Filter Circuit  
For example, given that VIN = 12 V, VOUT = 5 V, L = 15 μH, and the switching frequency fSW = 500 kHz, Inductor current  
ΔIL can be represented by the following equation.  
1
(
)
×
∆퐼= 푂푈푇 × 푉 푂푈푇  
= 0.389 [ A ]  
ꢀ푁  
ꢂꢃ  
×푓 ×퐿  
푆푊  
The rated current of the inductor (Inductor saturation current) must be larger than the sum of the maximum output current  
IOUTMAX and 1/2 of the inductor ripple current ΔIL.  
Use ceramic type capacitor for the output capacitor COUT. For recommended actual capacitance, use the values listed in  
Table 8. COUT affects the output ripple voltage. Select COUT so that it must satisfy the required ripple voltage  
characteristics.  
The output ripple voltage can be estimated by the following equation.  
1
푅푃퐿 = ∆퐼× ꢄꢅ퐸ꢆ푅  
+
[V]  
ꢇ×퐶  
×푓  
푆푊  
ꢈꢉꢊ  
where:  
RESR is the Equivalent Series Resistance (ESR) of the output capacitor.  
For example, given that COUT = 44 μF and RESR = 5 mΩ, ΔVRPL can be calculated as below.  
1
푅푃퐿 = 0.389 퐴 × ꢄ5 푚훺 + ꢇ×44 휇퐹×ꢌꢍꢍ 푘퐻푧ꢋ = ꢎ.ꢏ5 [mV]  
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2. Output LC Filter – continued  
In addition, the total capacitance connected to VOUT needs to satisfy the value obtained by the following equation.  
t
∆ꢖ  
L
SSꢐIN  
COUTMAX  
<
× (ꢔOUTꢕꢕ − ꢔOUTMAX  
)
[F]  
V
2
ꢑꢒꢓ  
where:  
tSSMIN is the minimum soft start time.  
VOUT is the output voltage.  
IOUTMAX is the maximum output current.  
ΔIL is the inductor ripple current.  
IOUTSS is the maximum output current during soft start.  
For example, given that VIN = 12 V, VOUT = 5.0 V, L = 15 µH, fSW = 500 kHz (Typ), tSSMIN = 3.5 ms, IOUTMAX = 2 A, and  
IOUTSS = 2.5 A, COUTMAX can be calculated as below.  
ꢗ.ꢌ ms  
COUTMAX  
<
× ꢄꢘ.5 ꢙ − ꢘ ꢙ − ꢍ.ꢗꢇꢚ Aꢋ = ꢘꢏꢎ [µF]  
ꢌ.ꢍ V  
2
If the total capacitance connected to VOUT is larger than COUTMAX, over current protection may be activated by the inrush  
current at startup and prevented to turn on the output. Confirm this on the actual application.  
Table 8. Recommended External Parts Value  
(Note 1)  
Inductor L  
[μH]  
COUT_EFF  
[μF]  
VIN [V]  
VOUT [V]  
R2 [kΩ]  
R3 [kΩ]  
CFB [pF]  
9 to 24  
9 to 24  
24  
3.3  
5
10  
15  
22  
44  
44  
44  
100  
110.82  
130  
22  
15  
56  
75  
12  
6.8  
100  
(Note 1) COUT_EFF is the sum of actual output capacitance.  
3. Output Voltage Setting, FB Capacitor  
The output voltage can be set by the feedback resistance ratio connected to the FB pin. For recommended R2 and R3 use  
the values listed in Table 8.  
The output voltage VOUT can be calculated as below.  
푅 ꢜ푅  
푂푈푇  
=
× 0.596 [V]  
(
)
0.7 ≤ 푂푈푇 ≤ 푉 × 0.8  
[V]  
ꢀ푁  
Figure 50. Feedback Resistor Circuit  
4. Bootstrap Capacitor  
The bootstrap capacitor 0.1 μF is recommended. Connect the capacitor between the SW pin and the BOOT pin. For the  
capacitance, take temperature characteristics, DC bias characteristics, and etc. into consideration to set to the actual  
capacitance of no less than 0.022 μF.  
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PCB Layout Design  
PCB layout design for DC/DC converter is very important. Appropriate layout can avoid various problems concerning power  
supply circuit. Figure 51-a to Figure 51-c show the current path in a buck DC/DC converter circuit. The Loop 1 in Figure 51-a is  
a current path when H-side switch is ON and L-side switch is OFF, the Loop 2 in Figure 51-b is when H-side switch is OFF and  
L-side switch is ON. The thick line in Figure 51-c shows the difference between Loop1 and Loop2. The current in thick line  
change sharply each time the switching element H-side and L-side switch change from OFF to ON, and vice versa. These sharp  
changes induce a waveform with harmonics in this loop. Therefore, the loop area of thick line that is consisted by input capacitor  
and IC should be as small as possible to minimize noise. For more details, refer to application note of switching regulator series  
“PCB Layout Techniques of Buck Converter”.  
Loop1  
VIN  
VOUT  
L
High Side Switch  
CIN  
COUT  
Low Side Switch  
GND  
GND  
Figure 51-a. Current Path when High Side Switch = ON, Low Side Switch = OFF  
VIN  
VOUT  
L
High Side Switch  
CIN  
COUT  
Loop2  
Low Side Switch  
GND  
GND  
Figure 51-b. Current Path when High Side Switch = OFF, Low Side Switch = ON  
VIN  
VOUT  
L
CIN  
COUT  
High Side FET  
Low Side FET  
GND  
GND  
Figure 51-c. Difference of Current and Critical Area in Layout  
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PCB Layout Design – continued  
When designing the PCB layout, pay attention to the following points:  
Connect the input capacitor C1 and C2 as close as possible to the VIN pin and the GND pin on the same plane as the  
IC.  
Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Route the inductor pattern  
L as thick and as short as possible.  
The feedback line connected to the FB pin should be as far away from the SW nodes as possible.  
Place the output capacitor C5, C6 and C7 away from input capacitor C1 and C2 to avoid harmonics noise from the input.  
R1 is provided for the measurement of feedback frequency characteristics (optional). By inserting a resistor into R1, it is  
possible to measure the frequency characteristics of feedback (phase margin) using FRA etc. R1 is short-circuited for  
normal use.  
Figure 52. Application Circuit  
Figure 53. Example of PCB Layout (Silkscreen Overlay)  
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PCB Layout Design – continued  
Top Layer  
Inner 1 Layer  
Inner 2 Layer  
Bottom Layer  
Figure 54. Example of PCB Layout  
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I/O Equivalence Circuits  
5. EN  
4. FB  
FB  
AGND  
2. SW 6. BOOT  
BOOTREG  
BOOT  
VIN  
SW  
REG  
PGND  
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Operational Notes  
1.  
2.  
3.  
Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at  
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,  
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground  
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below  
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions  
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.  
4.  
Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5.  
6.  
Recommended Operating Conditions  
The function and operation of the IC are guaranteed within the range specified by the recommended operating  
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical  
characteristics.  
Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow  
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.  
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing  
of connections.  
7.  
Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
8.  
9.  
Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
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Operational Notes continued  
10. Regarding the Input Pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be  
avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
P+  
N
P+  
P
P+  
N
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
P Substrate  
GND GND  
P Substrate  
GND  
GND  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
Figure 55. Example of Monolithic IC Structure  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Thermal Shutdown Circuit (TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always  
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj  
falls below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat  
damage.  
13. Over Current Protection Circuit (OCP)  
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
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Ordering Information  
B D 9 E 2 0  
0
F
P
4 -  
Z T L  
Package  
TSOT23-6L  
Packaging and forming specification  
TL: Embossed tape and reel  
Marking Diagram  
Part Number Marking  
LOT Number  
TSOT23-6L (TOP VIEW)  
A
A
Pin 1 Mark  
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Physical Dimension and Packing Information  
Package Name  
TSOT23-6L  
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Revision History  
Date  
Revision  
Changes  
25.Mar.2022  
22.Mar.2023  
001  
002  
New Release  
Corrected R5 calculation formula (Page 17).  
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Notice  
Precaution on using ROHM Products  
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,  
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you  
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport  
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car  
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or  
serious damage to property (Specific Applications), please consult with the ROHM sales representative in advance.  
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any  
damages, expenses or losses incurred by you or third parties arising from the use of any ROHMs Products for Specific  
Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are designed and manufactured for use under standard conditions and not under any special or  
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any  
special or extraordinary environments or conditions. If you intend to use our Products under any special or  
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of  
product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
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Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
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General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
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