BD9G500EFJ-LA [ROHM]

本产品面向工业设备市场、可保证长期稳定供货。BD9G500EFJ-LA是内置低导通电阻的上侧功率MOSFET的1ch降压DC/DC转换器。最大可输出5A的电流。是电流模式控制DC/DC转换器,具有高速瞬态响应性能,可轻松设定相位补偿。频率可在100kHz~650kHz之间调节。We recommend BD9G500UEFJ-LA for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.;
BD9G500EFJ-LA
型号: BD9G500EFJ-LA
厂家: ROHM    ROHM
描述:

本产品面向工业设备市场、可保证长期稳定供货。BD9G500EFJ-LA是内置低导通电阻的上侧功率MOSFET的1ch降压DC/DC转换器。最大可输出5A的电流。是电流模式控制DC/DC转换器,具有高速瞬态响应性能,可轻松设定相位补偿。频率可在100kHz~650kHz之间调节。We recommend BD9G500UEFJ-LA for your new development. It uses different production lines for the purpose of improving production efficiency. Electric characteristics noted in Datasheet does not differ between Production Line.

转换器
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Datasheet  
7 V to 76 V Input, 5 A Integrated HighSide  
MOSFET, Single Buck DC/DC Converter  
BD9G500EFJ-LA BD9G500UEFJ-LA  
General Description  
Key Specifications  
This is the product guarantees long time support in  
industrial market.  
Input Voltage Range:  
7 V to 76 V  
80 V  
Input Absolute Maximum Rating:  
BD9G500EFJ-LA BD9G500UEFJ-LA is buck DC/DC  
converter with built-in low on-resistance High-Side power  
MOSFET. It is capable of providing current of up to 5 A.  
Current mode architecture provides fast transient  
response and simple phase compensation setup. The  
operating frequency is adjustable from 100 kHz to 650  
kHz.  
85 V (1 ms pulse , 50 % duty or less)  
Reference Voltage Accuracy:  
1.0 V±1.0 %  
Output Current:  
5 A (Max)  
High-Side MOSFET ON-Resistance: 100 mΩ (Typ)  
Shutdown Current: 0 μA (Typ)  
Operating Temperature Range: -40 °C to +125 °C  
Package  
HTSOP-J8  
W (Typ) x D (Typ) x H (Max)  
4.9 mm x 6.0 mm x 1.0 mm  
Features  
Long Time Support Product for Industrial Applications.  
Wide Input Voltage Range  
Integrated High-Side MOSFET  
Current Mode Control  
Adjustable Frequency  
Soft Start Function  
Over Current Protection (OCP)  
Under Voltage Lockout (UVLO)  
Thermal Shutdown Protection (TSD)  
Over Voltage Protection (OVP)  
HTSOP-J8 package  
Applications  
Industrial Equipment  
Power Supply for FA’s Industrial Device  
Communications Power Systems  
Typical Application Circuits  
VIN  
8
6
VIN  
EN  
BOOT  
SW  
7
1
CBOOT  
BD9G500EFJ-LA  
BD9G500UEFJ-LA  
CIN  
R1  
L
VOUT  
D1  
COUT  
COMP  
RT  
GND  
FB  
R2  
3
5
2
4
R3  
CCOMP  
RCOMP  
RRT  
R4  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
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© 2020 ROHM Co., Ltd. All rights reserved.  
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Pin Configuration  
(TOP VIEW)  
EXP-PAD  
1
2
3
4
8
7
6
5
VIN  
BOOT  
EN  
SW  
GND  
COMP  
FB  
RT  
Pin Descriptions  
Pin No.  
1
Pin Name  
SW  
Function  
Switch pin. This pin is connected to the source of the High-Side MOSFET.  
Connect a schottky barrier diode between this pin and the GND pin.  
2
3
GND  
Ground pin.  
Output pin for the gm error amplifier and input to the PWM comparator.  
Connect phase compensation components to this pin.  
COMP  
Output voltage feedback pin.  
4
5
6
7
8
FB  
RT  
See Selection of Components Externally Connected Output Voltage Set Point for how  
to calculate the resistance of the output voltage setting.  
The internal oscillator frequency set pin. The internal oscillator is set with a single  
resistor connected between this pin and the GND pin. Frequency range is 100 kHz to  
650 kHz.  
Turning this pin signal low (0.4 V or lower) forces the device to enter the shutdown  
mode. Turning this pin signal high (2.5 V or higher) enables the device. This pin must  
be terminated.  
EN  
Bootstrap pin. Connect a bootstrap capacitor of 1 µF between this pin and the SW  
pin.The voltage of this capacitor is the gate drive voltage of the High Side MOSFET.  
BOOT  
VIN  
Power supply pin. This pin for the switching regulator and control circuit.  
Connecting 15 µF and 1 µF ceramic capacitors are recommended.  
A backside heat dissipation pad. Connecting to the internal PCB Ground plane by  
using via provides excellent heat dissipation characteristics.  
-
EXP-PAD  
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Block Diagram  
VIN  
VIN  
VIN  
3V  
5V  
EN  
6
VREF  
VREG  
BOOTREG  
7
8
BOOT  
OCP  
UVLO  
TSD  
OSC  
OVDIS  
VIN  
OVP  
VIN  
1
SW  
ERR  
SLOPE  
DRIVER  
LOGIC  
FB  
4
3
PWM  
SW  
COMP  
SOFT  
START  
5
2
RT  
GND  
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Description of Blocks  
VREF  
Block creating internal reference voltage 3 V (Typ).  
VREG  
Block creating internal reference voltage 5 V (Typ).  
BOOTREG  
Block creating gate drive voltage.  
TSD  
The TSD block is for thermal protection. It shuts down the device when the internal temperature of IC rises to  
175 °C (Typ) or more. Thermal protection circuit resets when the temperature falls. The circuit has a hysteresis of  
25 °C (Typ).  
UVLO  
This is under voltage lockout block. It shuts down the device when the VIN pin voltage falls to 6.4 V (Typ) or less.  
The UVLO threshold voltage has a hysteresis of 200 mV (Typ).  
ERR  
The ERR amplifier is the circuit which compares the feedback voltage of the output voltage with the reference voltage.  
The ERR amplifier output (the COMP pin voltage) determine the switching duty.  
OSC  
Block generating oscillation frequency.  
SLOPE  
Creates delta wave from clock, generated by OSC, and voltage composed by current sense signal of High-Side  
MOSFET.  
PWM  
Settles the switching duty by comparing the output COMP pin voltage of ERR amplifier and signal of SLOPE block.  
DRIVER LOGIC  
This is DC / DC driver control block. Input signal from PWM and drives MOSFET.  
SOFT START  
The Soft Start circuit slows down the rise of output voltage during start-up and controls the current, which allows the  
prevention of output voltage overshoot and inrush current.  
OCP  
Current flowing in High-Side MOSFET is controlled one cycle when over current occurs. If OCP function 4 times  
sequentially, the device stops the operation for 20 ms (Typ) and subsequently initiates a restart.  
OVP  
When the FB pin voltage is 1.2 V (Typ) or more, it turns High-Side MOSFET OFF. After FB pin voltage drops, it returns  
to normal operation with hysteresis. This IC has Discharge MOS. This MOS turns on 100 ns (Typ) at each duty cycle.  
When the FB pin voltage is 2.0 V (Typ) or more, it turns Discharge MOS off also.  
OVDIS  
When the FB pin voltage is 1.0 V (Typ) or more and 2.0 V (Typ) or less and remains in that state for 16 cycle, the  
Discharge MOS On-time is set to 400 ns (Typ) and discharge output voltage.  
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Absolute Maximum Ratings (Ta = 25 °C)  
Parameter  
Symbol  
Rating  
Unit  
-0.3 to +80.0  
-0.3 to +85.0  
-0.3 to +80.0  
-0.3 to +85.0  
-0.3 to +7.0  
-0.3 to + 7.0  
-0.3 to + 7.0  
-0.3 to + 7.0  
-0.5 to VIN + 0.3  
150  
Input Voltage  
VIN  
VINPULSE  
VEN  
V
V
Input Voltage (1 ms pulse , 50 % duty or less)  
EN Pin Voltage  
V
Voltage from GND to BOOT  
Voltage from SW to BOOT(Note 1)  
FB Pin Voltage  
VBOOT  
ΔVBOOT-SW  
VFB  
V
V
V
COMP Pin Voltage  
VCOMP  
VRT  
V
RT Pin Voltage  
V
SW Pin Voltage  
VSW  
V
Maximum Junction Temperature  
Storage Temperature Range  
Tjmax  
Tstg  
°C  
°C  
-55 to +150  
Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is  
operated over the absolute maximum ratings.  
Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the  
properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal resistance taken into consideration by increasing  
board size and copper area so as not to exceed the maximum junction temperature rating.  
(Note 1) Because this IC Voltage from SW to BOOT absolute maximum rating is 7.0 V, Do not short VIN Pin to BOOT Pin after power ON.  
Thermal Resistance(Note 2)  
Thermal Resistance (Typ)  
Parameter  
Symbol  
Unit  
1s(Note 4)  
2s2p(Note 5)  
HTSOP-J8  
Junction to Ambient  
Junction to Top Characterization Parameter(Note 3)  
θJA  
112.8  
6.0  
24.3  
2.0  
°C/W  
°C/W  
ΨJT  
(Note 2) Based on JESD51-2A (Still-Air).  
(Note 3) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside surface  
of the component package.  
(Note 4) Using a PCB board based on JESD51-3.  
(Note 5) Using a PCB board based on JESD51-5, 7.  
Layer Number of  
Measurement Board  
Material  
FR-4  
Board Size  
Single  
114.3 mm x 76.2 mm x 1.57 mmt  
Top  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
Layer Number of  
Measurement Board  
Thermal Via(Note 5)  
Material  
FR-4  
Board Size  
114.3 mm x 76.2 mm x 1.6 mmt  
2 Internal Layers  
Pitch  
Diameter  
4 Layers  
1.20 mm  
Φ0.30 mm  
Top  
Copper Pattern  
Bottom  
Thickness  
70 μm  
Copper Pattern  
Thickness  
35 μm  
Copper Pattern  
Thickness  
70 μm  
Footprints and Traces  
74.2 mm x 74.2 mm  
74.2 mm x 74.2 mm  
(Note 5) This thermal via connects with the copper pattern of all layers.  
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Recommended Operating Conditions  
Parameter  
Symbol  
Min  
Typ  
Max  
Unit  
V
Input Voltage  
VIN  
7
-40  
-
-
-
-
76  
+125(Note 1)  
5
Operating Temperature  
Output Current  
Topr  
°C  
A
IOUT  
0
(Note 3)  
Output Voltage Range  
VRANGE  
1.0(Note 2)  
0.97 × VIN  
V
(Note 1) Tj must be lower than 150 °C under actual operating environment.  
(Note 2) Use it in output voltage setting of which output pulse width does not become 350 ns (Typ) or less.  
(Note 3) When fosc = 200 kHz setting, the maximum Output Voltage is close to 0.97 (Typ) × (VIN - RONH × IOUT).  
Electrical Characteristics ( Unless otherwise specified Tj = -40 °C to +125 °C, VIN = 48 V, VEN = 3 V )  
Parameter  
Symbol  
IOPR  
Min  
-
Typ  
Max  
1.50  
Unit  
mA  
Conditions  
VFB = 3.0 V  
Tj = 25 °C  
Operating Supply Current  
0.75  
VEN = 0 V  
Tj = 25 °C  
Shutdown Current  
ISD  
-
0
10  
µA  
FB Threshold Voltage (Note 4)  
FB Input Current  
VFB  
IFB  
0.99  
-0.1  
1.00  
0
1.01  
+0.1  
V
VFB = 1.1V  
Tj = 25 °C  
µA  
Switching Frequency Range  
Using RT Pin  
fRTOSC  
100  
180  
-
-
650  
220  
140  
-
kHz  
kHz  
mΩ  
A
Tj = 25 °C  
RT = 47 kΩ  
fOSC  
Switching Frequency  
200  
100  
8.0  
High-Side MOSFET  
ON-Resistance  
ISW = -50 mA  
Tj = 25 °C  
RONH  
Without switching  
Open Loop  
Over Current limit(Note5)  
ILIMIT  
6.4  
UVLO Threshold Voltage  
UVLO Hysteresis Voltage  
EN High-Level Input Voltage  
EN Low-Level Input Voltage  
VUVLO  
VUVLOHYS  
VENH  
6.1  
100  
2.5  
0
6.4  
6.7  
300  
-
V
mV  
V
VIN falling  
200  
-
-
VENL  
0.4  
V
VEN = 3 V  
Tj = 25 °C  
IEN  
1.15  
15  
2.30  
20  
4.60  
25  
EN Input Current  
µA  
ms  
tSS  
Soft Start Time  
(Note 4) Only tested Tj = 25 °C on outgoing inspection.  
(Note 5) No tested on outgoing inspection.  
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Typical Performance Curves  
1.5  
10.0  
9.0  
8.0  
7.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
0.0  
VIN = 48 V  
1.4  
1.2  
1.1  
0.9  
0.8  
0.6  
0.5  
0.3  
0.2  
0.0  
VIN = 76 V  
VIN = 48 V  
VIN = 7 V  
-50 -25  
0
25  
50  
75  
100 125  
-50 -25  
0
25  
50  
75  
100 125  
Temperature : Tj []  
Temperature : Tj []  
Figure 1. Operating Supply Current vs Temperature  
Figure 2. Shutdown Current vs Temperature  
0.5  
1.010  
1.005  
1.000  
0.995  
0.990  
VFB = 1.1 V  
0.4  
0.3  
0.2  
0.1  
0.0  
-50  
-25  
0
25  
50  
75  
100 125  
-50 -25  
0
25  
50  
75  
100 125  
Temperature : Tj []  
Temperature : Tj []  
Figure 3. FB Threshold Voltage vs Temperature  
Figure 4. FB Input Current vs Temperature  
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Typical Performance Curves - continued  
300  
250  
200  
150  
100  
50  
220  
210  
200  
190  
180  
0
-50  
-25  
0
25  
50  
75  
100 125  
-50 -25  
0
25  
50  
75 100 125  
Temperature : Tj []  
Temperature : Tj []  
Figure 5. Switching Frequency vs Temperature  
Figure 6. High Side MOSFET ON-Resistance vs Temperature  
15.0  
13.0  
11.0  
9.0  
7
VIN Sweep up  
6.8  
6.6  
6.4  
VIN Sweep down  
7.0  
6.2  
5.0  
6
-50  
-25  
0
25  
50  
75  
100 125  
-50 -25  
0
25  
50  
75 100 125  
Temperature : Tj []  
Temperature : Tj []  
Figure 7. Over Current Limit vs Temperature  
Figure 8. UVLO Threshold Voltage vs Temperature  
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Typical Performance Curves - continued  
2.5  
10.0  
8.0  
6.0  
4.0  
2.0  
0.0  
2.0  
EN Sweep up  
1.5  
1.0  
EN Sweep down  
0.5  
0.0  
-50  
-25  
0
25  
50  
75  
100 125  
-50  
-25  
0
25  
50  
75  
100 125  
Temperature : Tj []  
Temperature : Tj []  
Figure 9. EN Threshold Voltage vs Temperature  
Figure 10. EN Input Current vs Temperature  
30  
25  
20  
15  
10  
650  
575  
500  
425  
350  
275  
200  
125  
50  
-50  
-25  
0
25  
50  
75  
100 125  
10 20 30 40 50 60 70 80 90 100  
Temperature : Tj []  
RT-Resistance : RRT [kΩ]  
Figure 11. Soft Start Time vs Temperature  
Figure 12. Switching Frequency vs RT-Resistance  
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Typical Performance Curves (Application)  
VIN = 7 V  
VIN = 24 V  
VIN = 48 V  
VIN = 12 V  
VIN = 36 V  
VIN = 60 V  
VIN = 7 V  
VIN = 24 V  
VIN = 48 V  
VIN = 12 V  
VIN = 36 V  
VIN = 60 V  
Figure 13. Efficiency vs Output Current  
Figure 14. Efficiency vs Output Current  
VOUT = 5.0 V, fOSC = 100 kHz)  
VOUT = 5.0 V, fOSC = 200 kHz)  
VIN = 7 V  
VIN = 24 V  
VIN = 48 V  
VIN = 12 V  
VIN = 7 V  
VIN = 24 V  
VIN = 48 V  
VIN = 12 V  
VIN = 36 V  
VIN = 60 V  
VIN = 36 V  
VIN = 60 V  
Figure 15. Output Voltage Deviation vs Output Current  
(Load Regulation, VOUT = 5 V, fOSC = 100 kHz)  
Figure 16. Output Voltage Deviation vs Output Current  
(Load Regulation VOUT = 5 V, fOSC = 200 kHz)  
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Typical Performance Curves (Application) - continued  
VIN : 30 V/div  
VOUT : 2 V/div  
VIN : 30 V/div  
VOUT : 2 V/div  
VSW : 30 V/div  
VSW : 30 V/div  
Time : 10 ms/div  
Time : 10 ms/div  
Figure 17. Start-up Waveform  
Figure 18. Shutdown Waveform  
(VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A)  
(VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A)  
VIN : 30 V/div  
VOUT : 2 V/div  
VIN : 30 V/div  
VOUT : 2 V/div  
VSW : 30 V/div  
VSW : 30 V/div  
Time : 10 ms/div  
Time : 10 ms/div  
Figure 19. Start-up Waveform  
Figure 20. Shutdown Waveform  
(VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A)  
(VIN = VEN, VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A)  
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Typical Performance Curves (Application) - continued  
VOUT : 50 mV/div  
VIN : 500 mV/div  
Time : 0.2 ms/div  
Time : 0.2 ms/div  
VSW : 30 V/div  
VSW : 30 V/div  
Figure 22. VOUT Ripple  
Figure 21. VIN Ripple  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A)  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0 A)  
VIN : 500 mV/div  
VOUT : 50 mV/div  
Time : 10 µs/div  
Time : 10 µs/div  
VSW : 30 V/div  
VSW : 30 V/div  
Figure 24. VOUT Ripple  
Figure 23. VIN Ripple  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0.3 A)  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 0.3 A)  
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Typical Performance Curves (Application) - continued  
VIN : 500 mV/div  
VOUT : 50 mV/div  
Time : 5 µs/div  
Time : 5 µs/div  
VSW : 30 V/div  
VSW : 30 V/div  
Figure 25. VIN Ripple  
Figure 26. VOUT Ripple  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A)  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, IOUT = 5 A)  
VSW : 5 V/div  
VSW : 20 V/div  
Time : 10 ms/div  
Time : 10 ms/div  
IL : 5 A/div  
IL : 5 A/div  
Figure 27. Switching Waveform  
Figure 28. Switching Waveform  
(VIN = 12 V, VOUT = 5 V, fOSC = 200 kHz, VOUT short to GND)  
(VIN = 48 V, VOUT = 5 V, fOSC = 200 kHz, VOUT short to GND)  
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Typical Performance Curves (Application) - continued  
Operating Range: Tj < 150 °C  
Operating Range: Tj < 150 °C  
Figure 29. Temperature vs Output Current  
(VIN = 48 V, VOUT = 5 V, ROHM Board )  
Figure 30. Temperature vs Output Current  
(VIN = 48 V, VOUT = 12 V, ROHM Board )  
IOUT = 1 A  
IOUT = 3 A  
IOUT = 5 A  
Figure 31. Maximum Duty Ratio vs Switching Frequency  
VIN = 12 V)  
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Function Description  
Enable Control  
The IC shutdown can be controlled by the voltage applied to the EN pin. When the EN pin voltage reaches 2.5 V  
(Min), the internal circuit is activated and the IC starts up. When EN pin voltage becomes 0.4 V (Max) , the device is  
shutdown. To enable shutdown control with the EN Pin, set the shutdown interval (Low level interval of EN) must be  
set to 100 µs or more.  
VEN  
VENH  
EN Pin  
VENL  
0
t
t
VOUT  
Output Voltage  
VOUT×0.95  
0
tSS  
Figure 32. Timing Chart with Enable Control  
Protective Functions  
The protective circuits are intended for prevention of damage caused by unexpected accidents.  
Do not use them for continuous protective operation.  
2.1 Over Current Protection (OCP)  
Current flowing in High-Side MOSFET is controlled one cycle when over current occurs. If OCP function 4 times  
sequentially, the device stops the operation for 20 ms (Typ) and subsequently initiates a restart.  
Soft Start  
20 ms (Typ)  
VOUT  
VOUT × 0.95  
SW  
LOW  
LOW  
4 times sequentially  
< 4 times  
IC internal  
OCP signal  
OCP Threshold  
8 A(Typ)  
Inductor  
Current  
IC internal  
SCP signal  
20 ms (Typ)  
SCP reset  
Figure 33. Over Current Protection Timing Chart  
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2.  
Protective Functions - coutinued  
2.2 Under Voltage Lockout Protection Function (UVLO)  
This is under voltage lockout block. It shuts down the device when the VIN pin voltage falls to 6.4 V (Typ) or less.  
The UVLO threshold voltage has a hysteresis of 200 mV (Typ).  
VIN  
UVLO  
ON  
UVLO  
OFF  
hys  
0V  
VOUT  
VOUT×0.95  
Soft Start  
Normal operation  
UVLO  
Normal operation  
Figure 34. UVLO Timing Chart  
2.3 Over Voltage Discharge Function (OVDIS)  
When the FB pin voltage is 1.0 V (Typ) or more and 2.0 V (Typ) or less and remains in that state for 16 cycle, the  
Discharge MOS On-time is set to 400 ns (Typ) and discharge output voltage.  
16/fOSC (Typ)  
VFB  
Reference Voltage  
1.0 V(Typ)  
OVDIS  
IOUT  
(Over Voltage Discharge)  
Discharge MOS  
GATE  
100 ns(Typ)  
400 ns(Typ)  
Figure 35. OVDIS Timing Chart  
2.4 Over Voltage Protection Function (OVP)  
When the FB pin voltage is 1.2 V (Typ) or more, it turns High-Side MOSFET OFF. After FB pin voltage drops, it  
returns to normal operation with hysteresis. This IC has Discharge MOS. This MOS turns on 100 ns (Typ) at each  
duty cycle. When the FB pin voltage is 2.0 V (Typ) or more, it turns Discharge MOS off also.  
2.5 Thermal Shutdown Function (TSD)  
This is the thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always be  
within the IC’s power dissipation rating. However, if the rating is exceeded for a continued period and the junction  
temperature (Tj) rises to 175 °C (Typ) or more, the TSD circuit will operate and turn OFF the output MOSFET.  
When the Tj falls below the TSD threshold, the circuits are automatically restored to normal operation. Note that  
the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC  
from heat damage.  
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Application Examples  
1
VOUT = 5.0 V  
Table 1. Specification of Application  
Symbol  
Parameter  
Specification Value  
7 V 48 V  
5.0 V  
Input Voltage  
VIN  
VOUT  
Output Voltage  
Switching Frequency  
Maximum Output Current  
fOSC  
200 kHz (Typ)  
5 A  
IOUTMAX  
VOUT_S  
C3  
VOUT_F  
L1  
R5  
VIN_S  
U1  
RS  
CS  
C7  
C6  
VIN_F  
1
8
7
6
5
D1  
SW  
VIN  
C9  
C4  
C5  
2
3
GND  
COMP  
FB  
BOOT  
C1  
C2  
GND_F  
EN  
RT  
EN  
R4  
GND_S  
R6  
R1  
R2  
4
GND_F  
GND_S  
BD9G500EFJ-LA  
BD9G500UEFJ-LA  
R3  
C10  
Figure 36. Application Circuit  
Table 2. Recommended Component Values(Note 1) (VOUT = 5.0 V)  
Part No.  
Value  
15 µF / 100 V  
1 µF / 100 V  
1 µF / 10 V  
6800 pF / 50 V  
47 µF / 25 V  
220 µF / 50 V Aluminum  
62 kΩ  
Part Name  
KRM55WR72A156MH01L  
GRM21BC72A105KE01L  
GRM155C71A105KE11D  
GRM1555C1H682JE01D  
KRM55WR71E476MH01L  
UBT1H221M  
Manufacturer  
MURATA  
MURATA  
MURATA  
MURATA  
MURATA  
NICHICON  
ROHM  
(Note 2)  
C4  
(Note 3)  
C9  
(Note 4)  
C3  
C2  
C6  
C7  
R1  
R2  
R3  
R4  
R5  
R6  
MCR03 series  
0.75 kΩ  
MCR03 series  
ROHM  
3 kΩ  
MCR03 series  
ROHM  
47 kΩ  
MCR03 series  
ROHM  
0 Ω  
MCR03 series  
ROHM  
0 Ω  
MCR03 series  
ROHM  
STPS15H100C  
ST  
D1  
L1  
100 V / 10 A  
RB088BM100TL  
7443551331  
ROHM  
33 µH  
WURTH  
(Note 1) These recommended component values for small output voltage ripple and improved transient response setting, please confirm on the actual equipment  
considering variations of the characteristics of the product and external components. Component not in table all for open conditions  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum value of  
no less than 4.7 μF.  
(Note 3) In order to reduce the influence of high frequency noise, connect a 1 μF ceramic capacitor as close as possible to the VIN pin and the GND pin.  
(Note 4) For the bootstrap capacitor C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 0.047 μF.  
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1
VOUT = 5.0 V – continued  
VIN = 7 V  
VIN = 12 V  
VIN = 36 V  
VIN = 60 V  
VIN = 24 V  
VIN = 48 V  
Figure 38. Frequency Characteristics  
( IOUT = 5.0 A )  
Figure 37. Efficiency vs Output Current  
Time: 0.2 ms/div  
Time: 5 µs/div  
VOUT: 50 mV/div  
VOUT: 50 mV/div  
VSW: 30 V/div  
VSW: 30 V/div  
Figure 40. VOUT Ripple  
( IOUT = 5.0 A )  
Figure 39. VOUT Ripple  
( IOUT = 0 A )  
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1
VOUT = 5.0 V – continued  
Time: 0.1 ms/div  
Time: 0.1 ms/div  
VOUT: 200 mV/div  
VOUT: 200 mV/div  
IOUT: 1 A/div  
IOUT: 1 A/div  
Figure 41. Load Transient Response  
( IOUT = 1.25 A – 3.75 A )  
Figure 42. Load Transient Response  
( IOUT = 0 A – 3.75 A )  
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Application Examples - coutinued  
2
VOUT = 3.3 V  
Table 3. Specification of Application  
Symbol  
Parameter  
Specification Value  
7 V 36 V  
3.3 V  
Input Voltage  
VIN  
VOUT  
Output Voltage  
Switching Frequency  
Maximum Output Current  
fOSC  
200 kHz (Typ)  
5 A  
IOUTMAX  
VOUT_S  
C3  
VOUT_F  
L1  
R5  
VIN_S  
U1  
RS  
CS  
C7  
C6  
VIN_F  
1
8
7
6
5
D1  
SW  
VIN  
C9  
C4  
C5  
2
3
GND  
COMP  
FB  
BOOT  
C1  
C2  
GND_F  
EN  
RT  
EN  
R4  
GND_S  
R6  
R1  
R2  
4
GND_F  
GND_S  
BD9G500EFJ-LA  
BD9G500UEFJ-LA  
R3  
C10  
Figure 43. Application Circuit  
Table 4. Recommended Component Values(Note 1) ( VOUT = 3.3 V )  
Part No.  
Value  
Part Name  
Manufacturer  
(Note 2)  
C4  
C9  
C3  
15 µF / 100 V  
1 µF / 100 V  
1 µF / 10 V  
6800 pF / 50 V  
47 µF / 25 V  
220 µF / 50 V Aluminum  
43 kΩ  
KRM55WR72A156MH01L  
GRM21BC72A105KE01L  
GRM155C71A105KE11D  
GRM1555C1H682JE01D  
KRM55WR71E476MH01L  
UBT1H221M  
MURATA  
MURATA  
MURATA  
MURATA  
MURATA  
NICHICON  
ROHM  
ROHM  
ROHM  
ROHM  
ROHM  
(Note 3)  
(Note 4)  
C2  
C6  
C7  
R1  
R2  
R3  
R4  
R5  
R6  
MCR03 series  
MCR03 series  
MCR03 series  
MCR03 series  
MCR03 series  
MCR03 series  
2.7 kΩ  
6.2 kΩ  
47 kΩ  
0 Ω  
10 Ω  
ROHM  
STPS15H100C  
RB088BM100TL  
7443551331  
ST  
ROHM  
WURTH  
D1  
L1  
100 V / 10 A  
33 µH  
(Note 1) These recommended component values for small output voltage ripple and improved transient response setting, please confirm on the actual equipment  
considering variations of the characteristics of the product and external components. Component not in table all for open conditions  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum value of  
no less than 4.7 μF.  
(Note 3) In order to reduce the influence of high frequency noise, connect a 1 μF ceramic capacitor as close as possible to the VIN pin and the GND pin.  
(Note 4) For the bootstrap capacitor C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 0.047 μF.  
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2
VOUT = 3.3 V – continued  
VIN = 7 V  
VIN = 24 V  
VIN = 12 V  
VIN = 36 V  
Figure 44. Efficiency vs Output Current  
Figure 45. Frequency Characteristics IOUT = 5.0 A  
Time: 0.2 ms/div  
Time: 5 µs/div  
VOUT: 50 mV/div  
VOUT: 50 mV/div  
VSW: 30 V/div  
VSW: 30 V/div  
Figure 47. VOUT Ripple  
( IOUT = 5.0 A )  
Figure 46. VOUT Ripple  
( IOUT = 0 A )  
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2
VOUT = 3.3 V – continued  
Time: 0.1 ms/div  
Time: 0.1 ms/div  
VOUT: 200 mV/div  
VOUT: 200 mV/div  
IOUT: 1 A/div  
IOUT: 1 A/div  
Figure 49. Load Transient Response  
(VIN = 36 V, IOUT = 0 A – 3.75 A )  
Figure 48. Load Transient Response  
(VIN = 36 V, IOUT = 1.25 A – 3.75 A )  
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Application Examples - coutinued  
3
VOUT = 12 V  
Table 5. Specification of Application  
Symbol  
Parameter  
Specification Value  
18 V 60 V  
12 V  
Input Voltage  
VIN  
VOUT  
Output Voltage  
Switching Frequency  
Maximum Output Current  
fOSC  
200 kHz (Typ)  
5 A  
IOUTMAX  
VOUT_S  
C3  
VOUT_F  
L1  
R5  
VIN_S  
U1  
RS  
CS  
C7  
C6  
VIN_F  
1
8
7
6
5
D1  
SW  
VIN  
C9  
C4  
C5  
2
3
GND  
COMP  
FB  
BOOT  
C1  
C2  
GND_F  
EN  
RT  
EN  
R4  
GND_S  
R6  
R1  
R2  
4
GND_F  
GND_S  
BD9G500EFJ-LA  
BD9G500UEFJ-LA  
R3  
C10  
Figure 50. Application Circuit  
Table 6. Recommended Component Values(Note 1) (VOUT = 12 V)  
Part No.  
Value  
Part Name  
Manufacturer  
(Note 2)  
C4  
C9  
C3  
15 µF / 100 V  
1 µF / 100 V  
1 µF / 10 V  
6800 pF / 50 V  
47 µF / 25 V  
220 µF / 50 V Aluminum  
150 kΩ  
KRM55WR72A156MH01L  
GRM21BC72A105KE01L  
GRM155C71A105KE11D  
GRM1555C1H682JE01D  
KRM55WR7YA476MH01L  
UBT1H221M  
MURATA  
MURATA  
MURATA  
MURATA  
MURATA  
NICHICON  
ROHM  
ROHM  
ROHM  
ROHM  
ROHM  
(Note 3)  
(Note 4)  
C2  
C6  
C7  
R1  
R2  
R3  
R4  
R5  
R6  
MCR03 series  
MCR03 series  
MCR03 series  
MCR03 series  
MCR03 series  
MCR03 series  
0.3 kΩ  
3.3 kΩ  
47 kΩ  
0 Ω  
0 Ω  
ROHM  
STPS15H100C  
RB088BM100TL  
7443551331  
ST  
ROHM  
WURTH  
D1  
L1  
100 V / 10 A  
33 µH  
(Note 1) These recommended component values for small output voltage ripple and improved transient response setting, please confirm on the actual equipment  
considering variations of the characteristics of the product and external components. Component not in table all for open conditions  
(Note 2) For the capacitance of input capacitor, take temperature characteristics, DC bias characteristics, etc. into consideration to set to a minimum value of  
no less than 4.7 μF.  
(Note 3) In order to reduce the influence of high frequency noise, connect a 1 μF ceramic capacitor as close as possible to the VIN pin and the GND pin.  
(Note 4) For the bootstrap capacitor C3, take temperature characteristics, DC bias characteristics, etc. into consideration to set to the actual capacitance of no  
less than 0.047 μF.  
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3
VOUT = 12 V – continued  
VIN = 18 V  
VIN = 24 V  
VIN = 48 V  
VIN = 60 V  
VIN = 36 V  
VIN = 55 V  
Figure 51. Efficiency vs Output Current  
Figure 52. Frequency Characteristics  
( IOUT = 5.0 A )  
Time: 5 µs/div  
Time: 0.2 ms/div  
VOUT: 50 mV/div  
VOUT: 100 mV/div  
VSW: 30 V/div  
VSW: 30 V/div  
Figure 54. VOUT Ripple  
( IOUT = 5.0 A )  
Figure 53. VOUT Ripple  
( IOUT = 0 A )  
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3
VOUT = 12 V – continued  
Time: 0.5 ms/div  
Time: 0.5 ms/div  
VOUT: 200 mV/div  
VOUT: 200 mV/div  
IOUT: 1 A/div  
IOUT: 1 A/div  
Figure 55. Load Transient Response  
( IOUT = 1.25 A – 3.75 A )  
Figure 56. Load Transient Response  
( IOUT = 0 A – 3.75 A )  
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Selection of Components Externally  
Contact us if not use the recommended component values in Application Examples.  
1. Switching Frequency  
BD9G500EFJ-LA can setup arbitrary internal oscillator frequency by connecting RT resistance. Recommended  
frequency setting range is 100 kHz to 650 kHz, For setting frequency fOSC [kHz] , RRT [kΩ], That can be used is  
calculated as follows. When RRT (kΩ) = 47 kΩ the frequency closed to 200 kHz (Typ) operation.  
18423  
푂푆(푘퐻푧)ꢁ.ꢁꢂ7  
(
)
ꢀ푇 푘훺 =  
6093.5  
ꢀ푇(푘훺)ꢃ.ꢄꢄ7  
푂푆(푘퐻푧) =  
Figure 57. Switching Frequency vs RT-Resistance  
2. Output LC Filter  
Figure 58. RT-Resistance vs Switching Frequency  
The DC/DC converter requires an LC filter for smoothing the output voltage in order to supply a continuous current to  
the load. Selecting an inductor with a large inductance causes the ripple current ΔIL that flows into the inductor to be  
small, decreasing the ripple voltage generated in the output voltage, but it is not advantageous in terms of the load  
transient response characteristic. Selecting an inductor with a small inductance improves the transient response  
characteristic but causes the inductor ripple current to be large, which increases the ripple voltage in the output voltage,  
showing a trade-off relationship.  
IL  
Inductor saturation current > IOUTMAX + IL/2  
IL  
Maximum Output Current IOUTMAX  
t
Figure 59. Waveform of Inductor Current  
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2. Output LC Filter – Connected  
Computation ∆IL. with VIN = 48 V, VOUT = 5 V, L = 33 µH, and switching frequency fOSC = 200 kHz, the method is as  
below.  
1
[mA]  
= 6ꢇ9  
(
)
×
∆퐼= 푂푈푇 × 푉 푂푈푇  
ꢅ푁  
푉 × 푓 × ꢆ  
ꢅ푁  
푂푆퐶  
Also for saturation current of inductor, select the one with larger current than the total of maximum output current and  
1/2 of inductor ripple current ∆IL.Output capacitor COUT affects output ripple voltage characteristics. Select output  
capacitor COUT so that necessary ripple voltage characteristics are satisfied.  
Output ripple voltage can be expressed in the following method.  
1
ꢀ푃퐿 = ∆퐼× ꢈ푅퐸푆ꢀ  
+
[V]  
8 × ꢉ푂푈푇 × 푓  
푂푆퐶  
RESR is the serial equivalent series resistance here.  
With COUT = 267 µF, RESR = 30 mΩ the output ripple voltage is calculated as below.  
1
[mV]  
ꢊ = 21.96  
ꢀ푃퐿 = 0.6ꢇ9 × ꢈ30푚훺 +  
8 × 26ꢇ휇 × 200푘  
Be careful of total capacitance value, when additional capacitor CLOAD is connected to output capacitor COUT  
Use maximum additional capacitor CLOAD (Max) condition which satisfies the following method.  
Maximum starting inductor ripple current IL_START must smaller than over current limit 6.4 A (Min).  
.
Maximum starting inductor ripple current IL_START can be expressed in the following method.  
퐿_푆푇퐴ꢀ푇 = 퐼푂푈푇푀퐴푋 + () + 퐼퐶퐴푃  
[A]  
2
Charge current to output capacitor ICAP can be expressed in the following method.  
(
)
푂푈푇 + ꢉ퐿푂퐴퐷 × 푂푈푇  
[A]  
퐶퐴푃  
=
푆푆  
Computation with VIN = 48 V, VOUT = 5 V, L = 33 µH, IOUTMAX = 5 A (Max), switching frequency fOSC = 180 kHz (Min),  
Output capacitor COUT = 267 µF, Soft Start Time tSS = 15 ms (Min), the method is as below.  
∆퐼  
2
ꢌ6.4 − 퐼푂푈푇푀퐴푋  
ꢍ × 푡푆푆  
(
)
퐿푂퐴퐷 ꢋ푎푥 ≤  
− ꢉ푂푈푇 = 2801 [µF]  
푂푈푇  
3. Catch Diode  
BD9G500EFJ-LA should be taken to connect external catch diode between the SW pin and the GND pin. The diode  
require adherence to absolute maximum ratings of application. Opposite direction voltage should be higher than  
maximum voltage of the VIN pin. Also for saturation current of diode, select the one with larger current than the total  
of maximum output current and 1/2 of inductor ripple current ∆IL.  
4. Bootstrap capacitor  
Bootstrap capacitor C3 shall be 1 μF. Connect a bootstrap capacitor between the SW pin and the BOOT pin.  
For capacitance of Bootstrap capacitor, take temperature characteristics, DC bias characteristics, etc. into  
consideration to set minimum value to no less than 0.047 μF.  
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Selection of Components Externally – Connected  
5. Output Voltage Set Point  
The output voltage value can be set by the feedback resistance ratio.  
+ 푅+ 푅ꢏ  
VOUT  
[V]  
푂푈푇  
=
ꢂ  
R6  
R3  
FB  
ERR  
R2  
1.0V  
Figure 60. Feedback Resistor Circuit  
6. Input capacitor configuration  
For input capacitor, use a ceramic capacitor. For normal setting, 15 μF is recommended, but with larger value, input  
ripple voltage can be further reduced. Also, for capacitance of input capacitor, take temperature characteristics, DC  
bias characteristics, etc. into consideration to set minimum value to no less than 4.7 μF.  
7. Phase Compensation  
A current mode control buck DC/DC converter is a two-pole, one-zero system. Two-pole formed by an error amplifier  
and load and one zero point added by phase compensation. The phase compensation resistor R1 determines the  
crossover frequency fCRS where the total loop gain of the DC/DC converter is 0 dB. High value for this crossover  
frequency fCRS provides a good load transient response characteristic but inferior stability. Conversely, specifying a  
low value for the crossover frequency fCRS greatly stabilizes the characteristics but the load transient response  
characteristic is impaired.  
7.1 Selection of Phase Compensation Resistor R1  
The phase compensation resistance R1 can be determined by using the following equation.  
2 × 휋 × 푂푈푇 × 푓 × ꢉ푂푈푇  
퐶ꢀ푆  
=  
[Ω]  
퐹퐵 × 퐺푀푃 × 퐺푀퐴  
Where:  
VOUT is the output voltage  
fCRS is the crossover frequency  
COUT is the output capacitance  
VFB is the feedback reference voltage (1.0 V (Typ))  
GMP is the current sense gain (14 A / V (Typ))  
GMA is the error amplifier transconductance (200 µA/V (Typ))  
7.2 Selection of phase compensation capacitance C2  
For stable operation of the DC/DC converter, inserting a zero point under 1/9 of the zero crossover frequency  
cancels the phase delay due to the pole formed by the load often provides favorable characteristics.  
The phase compensation capacitance C2 can be determined by using the following equation.  
1
=  
[F]  
2 × 휋 × 푅× 푓  
Where:fz is Zero point inserted  
7.3 Loop stability  
In order to secure stability of DC/DC converter, confirm there is enough phase margin on actual equipment.  
Under the worst condition, it is recommended to secure phase margin more than 45°.  
In practice, the characteristics may vary depending on PCB layout, routing of wiring, types of parts to use and  
operating environments (temperature, etc.).  
Use gain-phase analyzer or FRA to confirm frequency characteristics on actual equipment. Contact the  
manufacturer of each measuring equipment to check its measuring method, etc.  
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PCB Layout Design  
PCB layout design for DC/DC converter power supply IC is as important as the circuit design. Appropriate layout can avoid  
various problems caused by power supply circuit. Figure 66-a to 66-c show the current path in a buck DC/DC converter circuit.  
The Loop1 in Figure 66-a is a current path when High Side switch is ON, the Loop2 in Figure 66-b is when High Side switch  
is OFF. The thick line in Figure 66-c shows the difference between Loop1 and Loop2. The current in thick line changes sharply  
each time the switching element change from OFF to ON, and vice versa. These sharp changes induce several harmonics  
in the waveform. Therefore, the loop area of thick line that is consisted by input capacitor and IC should be as small as  
possible to minimize noise. For more detail, refer to application note of switching regulator series “PCB Layout Techniques of  
Buck Converter”.  
Loop1  
VIN  
VOUT  
L
High Side switch  
CIN  
COUT  
GND  
GND  
Figure 61-a. Current path when High Side switch = ON  
VIN  
VOUT  
L
High Side switch  
CIN  
COUT  
Loop2  
GND  
GND  
Figure 61-b. Current Path when High Side switch = OFF  
VIN  
VOUT  
L
High Side FET  
CIN  
COUT  
GND  
GND  
Figure 61-c. Difference of Current and Critical Area in Layout  
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PCB Layout Design - continued  
Accordingly, design the PCB layout with particular attention paid to the following points.  
·Provide the input capacitor close to the VIN pin of the IC as possible on the same plane as the IC.  
·If there is any unused area on the PCB, provide a copper foil plane for the ground node to assist heat dissipation from the IC  
and the surrounding components.  
·Switching nodes such as SW are susceptible to noise due to AC coupling with other nodes. Trace to the coil and catch diode  
as thick and short as possible.  
·Provide lines connected to the FB pin and the COMP pin as far from the SW node.  
·Provide the output capacitor away from the input capacitor in order to avoid the effect of harmonic noise from the input.  
Bottom Layer  
Top Layer  
Figure 62. Example of Sample Board Layout Pattern  
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I/O Equivalence Circuit  
1. SW 7. BOOT  
3. COMP  
BOOTREG  
VREG  
BOOT  
VIN  
SW  
COMP  
GND  
GND  
GND  
5. RT  
GND  
4. FB  
FB  
RT  
GND  
GND GND  
6. EN  
EN  
GND  
GND  
GND  
GND  
GND  
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Operational Notes  
1.  
2.  
3.  
Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power  
supply pins.  
Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at  
all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic  
capacitors.  
Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition. However,  
pins that drive inductive loads (e.g. motor driver outputs, DC-DC converter outputs) may inevitably go below ground  
due to back EMF or electromotive force. In such cases, the user should make sure that such voltages going below  
ground will not cause the IC and the system to malfunction by examining carefully all relevant factors and conditions  
such as motor characteristics, supply voltage, operating frequency and PCB wiring to name a few.  
4.  
Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5.  
6.  
Recommended Operating Conditions  
The function and operation of the IC are guaranteed within the range specified by the recommended operating  
conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical  
characteristics.  
Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may  
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power  
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring,  
and routing of connections.  
7.  
Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may  
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply  
should always be turned off completely before connecting or removing it from the test setup during the inspection  
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during  
transport and storage.  
8.  
9.  
Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result  
in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)  
and unintentional solder bridge deposited in between pins during assembly to name a few.  
Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
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Operational Notes – continued  
10. Regarding the Input Pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a  
parasitic diode or transistor. For example (refer to figure below):  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to  
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should  
be avoided.  
Resistor  
Transistor (NPN)  
Pin A  
Pin B  
Pin B  
B
E
C
Pin A  
B
C
E
P
P+  
P+  
N
P+  
P
P+  
N
N
N
N
N
N
N
Parasitic  
Elements  
Parasitic  
Elements  
P Substrate  
GND GND  
P Substrate  
GND  
GND  
Parasitic  
Elements  
Parasitic  
Elements  
N Region  
close-by  
Figure 63. Example of Monolithic IC Structure  
11. Ceramic Capacitor  
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with  
temperature and the decrease in nominal capacitance due to DC bias and others.  
12. Thermal Shutdown Circuit (TSD)  
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always  
be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the  
junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj  
falls below the TSD threshold, the circuits are automatically restored to normal operation.  
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no  
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from  
heat damage.  
13. Over Current Protection Circuit (OCP)  
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This  
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should  
not be used in applications characterized by continuous operation or transitioning of the protection circuit.  
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Ordering Information  
B D 9 G  
5
0
0
x
E F  
J
-
LAE2  
Production Line  
NONE:  
Production Line A  
“U”:  
Package  
EFJ: HTSOP-J8  
Product Class  
LA: For Industrial Applications  
Packaging and forming specification  
E2: Embossed tape and reel  
Production Line B  
Package  
HTSOP-J8  
HTSOP-J8  
Part Number  
Remarks  
BD9G500EFJ-LAE2  
BD9G500UEFJ-LAE2  
Production Line A(Note 1)  
Production Line B(Note 1)  
(Note 1) For the purpose of improving production efficiency, Production Line A and B have a multi-line configuration.  
Electrical characteristics noted in Datasheet does not differ between Production Line A and B.  
Production Line B is recommended for new product.  
Marking Diagram  
HTSOP-J8 (TOP VIEW)  
Part Number Marking  
LOT Number  
D 9 G 5 0 0  
Pin 1 Mark  
HTSOP-J8 (TOP VIEW)  
Part Number Marking  
LOT Number  
9 G 5 0 0 U  
Pin 1 Mark  
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Physical Dimension and Packing Information  
Package Name  
HTSOP-J8  
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Revision History  
Date  
Revision  
Changes  
11.Jun.2020  
20.May.2022  
001  
002  
New Release  
Add BD9G500UEFJ-LA  
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Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (Specific Applications), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHMs Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.  
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble  
cleaning agents for cleaning residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in  
the range that does not exceed the maximum junction temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must  
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,  
please consult with the ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice-PAA-E  
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Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
A two-dimensional barcode printed on ROHM Products label is for ROHMs internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign  
trade act, please consult with ROHM in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data.  
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the  
Products with other articles such as components, circuits, systems or external equipment (including software).  
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM  
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to  
manufacture or sell products containing the Products, subject to the terms and conditions herein.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
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Daattaasshheeeett  
General Precaution  
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.  
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this document is current as of the issuing date and subject to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales  
representative.  
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
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BD9G500UEFJ-LA

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BD9P135EFV-C

BD9P系列是兼顾高速响应和高效率的42V耐压车载一次DC/DC转换器IC。其特点是通过Nano Pulse Control™实现的稳定且较大的降压比、通过扩频功能实现的低EMI(低噪声)、在电池刚启动时也能稳定供电的高速响应性能,有助于降低系统功耗和降低BOM成本。包括ADAS的传感器、摄像头、雷达,以及车载信息娱乐、仪表盘、 BCM(车身控制模块)在内,适用于汽车中要求小型化、高效率化、高可靠性的应用。a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM

BD9P135EFV-CE2

3.5 V to 40 V Input, 1 A Single 2.2 MHz Buck DC/DC Converter For Automotive
ROHM

BD9P135MUF-C

BD9P系列是兼顾高速响应和高效率的42V耐压车载一次DC/DC转换器IC。其特点是通过Nano Pulse Control™实现的稳定且较大的降压比、通过扩频功能实现的低EMI(低噪声)、在电池刚启动时也能稳定供电的高速响应性能,有助于降低系统功耗和降低BOM成本。包括ADAS的传感器、摄像头、雷达,以及车载信息娱乐、仪表盘、 BCM(车身控制模块)在内,适用于汽车中要求小型化、高效率化、高可靠性的应用。a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM

BD9P135MUF-CE2

3.5 V to 40 V Input, 1 A Single 2.2 MHz Buck DC/DC Converter For Automotive
ROHM

BD9P155EFV-C

BD9P系列是兼顾高速响应和高效率的42V耐压车载一次DC/DC转换器IC。其特点是通过Nano Pulse Control™实现的稳定且较大的降压比、通过扩频功能实现的低EMI(低噪声)、在电池刚启动时也能稳定供电的高速响应性能,有助于降低系统功耗和降低BOM成本。包括ADAS的传感器、摄像头、雷达,以及车载信息娱乐、仪表盘、 BCM(车身控制模块)在内,适用于汽车中要求小型化、高效率化、高可靠性的应用。a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;}
ROHM

BD9P155EFV-CE2

3.5 V to 40 V Input, 1 A Single 2.2 MHz Buck DC/DC Converter For Automotive
ROHM