BH30MA3WHFV-TR [ROHM]
Standard CMOS LDO Regulators; 标准CMOS LDO稳压器
| 型号： | BH30MA3WHFV-TR |
| 厂家： | 
ROHM |
| 描述： | Standard CMOS LDO Regulators |
| 文件： | 总9页 (文件大小：823K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS LDO Regulator Series for Portable Equipments
Standard CMOS LDO Regulators
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series
Large Current 300mA
CMOS LDO Regulators
BH □□MA3WHFV Series
No.09020EBT02
Description
The BH□□FB1W, BH□□LB1W and BH□□MA3W series are low dropout CMOS regulators with 150 mA and 300 mA
output that have ±1% high accuracy output voltage.
The BH□□FB1W series combines 40µA low current consumption and a 70 dB high ripple rejection ratio by utilizing output
level CMOS technology. The components can be easily mounted into the small standard SSOP5 and the ultra-small
HVSOF5/HVSOF6 packages.
Features
1) High accuracy output voltage: ±1%
2) High ripple rejection ratio: 70 dB (BH□□FB1WHFV/WG, BH□□LB1WHFV/WG)
3) Low dropout voltage: 60 mV (when current is 100 mA) (BH□□MA3WHFV)
4) Stable with ceramic output capacitors
5) Low Bias current : 40µA (IO = 50 mA) (BH□□FB1WHFV/WG)
6) Output voltage ON/OFF control
7) Built-in over-current protection and thermal shutdown circuits
8) Ultra-small power package: HVSOF5 (BH□□FB1WHFV, BH□□LB1WHFV)
9) Ultra-small power package: HVSOF6 (BH□□MA3WHFV)
Applications
Battery-driven portable devices and etc.
Line up
150mA BH□□FB1W and BH□□LB1W Series
Part Number
1.5 1.8 1.85 2.5 2.8 2.9 3.0 3.1 3.3
Package
SSOP5
BH□□FB1WG
- - -
HVSOF5
SSOP5
BH□□FB1WHFV - - -
BH□□LB1WG
- - - - - - -
- - - - - -
HVSOF5
BH□□LB1WHFV
300mA BH□□MA3WHFV series
Part Number
1.5 1.8 2.5 2.8 2.9 3.0 3.1 3.3
Package
BH□□MA3WHFV
HVSOF6
Part Number: B H □□ F B 1 W □ , B H □□ L B 1 W □
Part Number: B H □□ M A 3 W □
a
b
a
b
a
b
Symbol
Details
Output Voltage Designation
Symbol
Details
Output Voltage Designation
□□
15
18
1J
25
Output Voltage (V)
1.5V (Typ.)
1.8V (Typ.)
1.85V (Typ.)
2.5V (Typ.)
2.8V (Typ.)
Output Voltage (V)
2.9V (Typ.)
3.0V (Typ.)
3.1V (Typ.)
3.3V (Typ.)
□□
15
18
25
28
Output Voltage (V)
1.5V (Typ.)
1.8V (Typ.)
2.5V (Typ.)
2.8V (Typ.)
HFV : HVSOF6
Output Voltage (V)
2.9V (Typ.)
3.0V (Typ.)
3.1V (Typ.)
3.3V (Typ.)
□□
29
30
31
33
□□
29
30
31
33
a
b
a
b
Package:
28
Package:
G : SSOP5 HFV : HVSOF5
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© 2009 ROHM Co., Ltd. All rights reserved.
2009.11 - Rev. B
1/8
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VMAX
Limits
Unit
V
+
~
-0.3
6.5
Applied supply voltage
680 (HVSOF6)
410 (HVSOF5)
540 (SSOP5)
Pd
mW
Power dissipation
+
Topr
Tstg
-
40
~
~
°C
°C
85
Operating temperature range
Storage temperature range
+
125
-55
Recommended operating range
Parameter
Symbol
Min.
2.5
-
Typ.
-
Max.
5.5
Unit
V
Power supply voltage
BH□□MA3W
VIN
-
300
150
150
mA
mA
mA
BH□□FB1W
-
-
Output current
IOUT
BH□□LB1W
-
-
Recommended operating conditions
Parameter
Input capacitor
Symbol
CIN
Min.
0.1
Typ.
-
Max.
-
Unit
µF
Conditions
Ceramic capacitor recommended
Ceramic capacitor recommended
Ceramic capacitor recommended
Co
1.0
-
-
µF
Output capacitor
Noise decrease capacitor
Cn
-
0.01
0.22
µF
BH□□FB1WHFV/WG , BH□□LB1WHFV/WG
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
VOUT
VOUT
I GND
I STBY
RR
-
-
-
-
-
40
-
70
1.0
-
µA
µA
dB
mV
mV
mV
mV
mV
mA
mA
kΩ
V
70
50
50
250
2
LTV1
LTV2
-
-
-
-
450
20
30
-
VSAT
VDL1
VDL01
ILMAX
I SHORT
RSTB
-
-
-
10
250
50
-
Vo=0V
550
1100
-
-
2200
VIN
0.3
VSTBH
VSTBL
1.5
ON
STBY
control voltage
-
0.3
V
OFF
BH□□MA3WHFV
Parameter
Symbol
VOUT
Min.
Typ.
VOUT
65
-
Max.
Unit
Conditions
IOUT=1mA
V
I GND
-
-
-
-
-
-
-
-
-
-
95
1.0
-
µA
IOUT=1mA
µA
STBY=0V
I STBY
RR
60
60
2
dB
VRR=-20dBv, fRR=1kHz, IOUT=10mA
90
20
30
mV
VIN=0.98 X VOUT, IOUT=100mA
VIN=VOUT+0.5V to 5.5V
IOUT=1mA to 100mA
VSAT1
VDL1
VDL01
VDL02
mV
6
mV
18
mV
IOUT=1mA to 300mA
90
-
+
ppm/°C IOUT=1mA, Ta=-40 to 85°C
±
100
mA
mA
600
100
-
-
Vo=VOUT X 0.85
Vo=0V
ILMAX
I SHORT
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© 2009 ROHM Co., Ltd. All rights reserved.
2/8
2009.11 - Rev. B
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
Typ i cal ch aract eri st i cs
• Output voltage-input voltage
4
3
2
1
0
4
3
2
1
0
2
1.5
1
BH15LB1WHFV
~ Condition ~
BH28FB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1µF
BH30MA3WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=1.0µF
VIN=0 to 5.5V
Cin=0.1µF
Co=1.0µF
Co=1.0µF
Co=1.0µF
Cn=none
ROUT= 1.5k Ω
Ta= 2 5 °C
ROUT= 2.8k Ω
Ta= 2 5 °C
ROUT= 3.0k Ω
Ta= 2 5 °C
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
Input Voltage VIN[V]
Input Voltage VIN[V]
Input Voltage VIN[V]
Fig.3
Fig.1
Fig.2
• GND current
-input voltage
60
50
40
30
20
10
0
100
80
60
40
20
0
60
BH15LB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1µF
BH28FB1WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=0.1µF
BH30MA3WHFV
~ Condition ~
VIN=0 to 5.5V
Cin=1.0µF
Co=1.0µF
50
40
30
20
10
Co=1.0µF
Co=1.0µF
Cn=none
ROUT= 2.8k
Ta= 2 5 °C
Ω
ROUT= 1.5k
Ta= 2 5 °C
Ω
ROUT= 3.0k
Ta= 2 5 °C
Ω
0
0ꢁ 0.5
1
1.5
2
2.5
3
3.5 ꢁ4ꢁꢀ4.5 5ꢁ5.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5 5ꢀꢀꢀꢀ5.5
Input Voltage VIN[V]
Input Voltage VIN[V]
Input Voltage VIN[V]
Fig.4
Fig.6
Fig.5
• Output voltage-output current
2
3.5
3
3.5
3
BH15LB1WHFV
~ Condition ~
BH28FB1WHFV
~ Condition ~
BH30MA3WHFV
~ Condition ~
VIN=3.5V
VIN=3.8V
VIN=4.0V
VOUT=1.53V to 0V
Cin=0.1µF
Co=1.0µF
VOUT=2.83V to 0V
Cin=0.1µF
VOUT=3.03V to 0V
Cin=1.0µF
Co=1.0µF
1.5
2.5
2
2.5
2
Co=1.0µF
Ta=25°C
Ta=25°C
Cn=none
Ta=25°C
1
0.5
0
1.5
1
1.5
1
0.5
0
0.5
0
0
50
100
150
200
250
300
0
100
200
300 400
500 600
700
0
100
200
300
400
Output Current IOUT[mA]
Output Current IOUT[mA]
Output Current IOUT[mA]
Fig.9
Fig.7
Fig.8
• Dropout voltage-output current
500
300
250
200
150
100
50
BH28FB1WHFV
~ Condition ~
BH30MA3WHFV
~ Condition ~
VIN=2.74V
IOUT=0 to 150mA
Cin=0.1µF
VIN=2.940V
IOUT=0 to 300mA
Cin=1.0µF
Co=1.0µF
400
300
200
100
Co=1.0µF
Ta= 2 5 °C
Cn=none
Ta= 2 5 °C
0
0
0
50
100
150
0
50
100
150
200
250
300
Output Current IOUT[mA]
Output Current IOUT[mA]
Fig.11
Fig.10
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© 2009 ROHM Co., Ltd. All rights reserved.
3/8
2009.11 - Rev. B
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
Typical Characteristics
• Output voltage-temperature
Ω
Ω
Ω
°
°
°
°
°
°
• Ripple reflection-frequency
Ω
Ω
Ω
°
°
°
• Load response characteristics (CO = 1.0 µF)
°
°
°
• Output voltage startup time
°
°
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© 2009 ROHM Co., Ltd. All rights reserved.
4/8
2009.11 - Rev. B
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
Block diagrams
Power supply input
Ground
Output voltage ON/OFF control
(High: ON, Low: OFF)
NO CONNECT
Voltage output
Output voltage ON/OFF control
(High: ON, Low: OFF)
Ground
Power supply input
Voltage output
NO CONNECT
Terminal No. Terminal Name Function
Power supply input
Voltage output
Voltage output
Noise reducing capacitor
ground terminal
Ground
Output voltage ON/OFF control
(High: ON, Low: OFF)
Power dissipation Pd
1. Power dissipation
Power dissipation calculation include estimates of power dissipation characteristics and internal IC power consumption
and should be treated as guidelines. In the event that the IC is used in an environment where this power dissipation is
exceeded, the attendant rise in the junction temperature will trigger the thermal shutdown circuit, reducing the current
capacity and otherwise degrading the IC's design performance. Allow for sufficient margins so that this power dissipation
is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
Input voltage
Output voltage
Output current
2. Power dissipation characteristics (Pd)
Board: 70 mm X 70 mm X 1.6 mm
Material: Glass epoxy PCB
Board: 70 mm X 70 mm X 1.6 mm
Material: Glass epoxy PCB
Board: 70 mm X 70 mm X 1.6 mm
Material: Glass epoxy PCB
°
°
°
Fig. 27: HVSOF5
Fig. 28: SSOP5
Power Dissipation/
Power Dissipation Reduction (Example)
Fig. 26: HVSOF6
Power Dissipation/
Power Dissipation Reduction (Example)
Power Dissipation/
Power Dissipation Reduction (Example)
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© 2009 ROHM Co., Ltd. All rights reserved.
5/8
2009.11 - Rev. B
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
Input capacitor
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring routes are used, so
they should be checked once the IC has been mounted.
Ceramic capacitors generally have temperature and DC bias characteristics. When selecting ceramic capacitors, use X5R or
X7R or better models that offer good temperature and DC bias characteristics and high torelant voltages.
Examples of ceramic capacitor characteristics
100
95
90
85
80
75
70
120
100
80
60
40
20
0
120
100
80
60
40
20
0
50V torelance
50V torelance
16V torelance
X7R
X5R
16V torelance
Y5V
10V torelance
10V torelance
0
1
2
3
4
-
25
0
25
50
75
0
1
2
3
4
DC bias Vdc (V)
Temperature (°C)
DC bias Vdc (V)
Fig. 29: Capacitance
-bias characteristics (Y5V)
Fig. 30: Capacitance
-
bias characteristics (X5R, X7R)
Fig. 31: Capacitance–temperature characteristics
(X5R, X7R, Y5V)
Output capacitor
To prevent oscillation at the output, it is recommended that the IC be operated at the stable region show in below Fig. It
operates at the capacitance of more than 1.0µF. As capacitance is larger, stability becomes more stable and characteristic of
output load fluctuation is also improved.
BH□□LB1WHFV/WG
BH□□FB1WHFV/WG
BH□□MA3WHFV
Cout=1.0µF
+
Cout=2.2µF
+
Cout=1.0µF
Cin=1.0µF
+
Ta= 25°C
Ta= 25°C
Ta= 25°C
100
100
100
10
1
10
1
10
1
Stable region
Stable region
Stable region
0.1
0.1
0.01
0.1
0.01
0.01
0
50
100
150
0
50
Output current IOUT(mA)
Fig. 33 BH□□FB1WHFV/WG
Stable operating region characteristics (Example)
100
150
0
100
Output current IOUT(mA)
Fig. 34 BH□□MA3WHFV
Stable operating region characteristics (Example)
200
300
Output current IOUT(mA)
Fig. 32 BH□□LB1WHFV/WG
Stable operating region characteristics (Example)
Other precautions
• Over current protection circuit
The IC incorporates a built-in over current protection circuit that operates according to the output current capacity. This circuit
serves to protect the IC from damage when the load is shorted. The protection circuits use fold-back type current limiting and
are designed to limit current flow by not latching up in the event of a large and instantaneous current flow originating from a
large capacitor or other component. These protection circuits are effective in preventing damage due to sudden and
unexpected accidents. However, the IC should not be used in applications characterized by the continuous operation or
transitioning of the protection circuits.
• Thermal shutdown circuit
This system has a built-in thermal shutdown circuit for the purpose of protecting the IC from thermal damage. As shown
above, this must be used within the range of power dissipation, but if the power dissipation happens to be continuously
exceeded, the chip temperature increases, causing the thermal shutdown circuit to operate. When the thermal shutdown
circuit operates, the operation of the circuit is suspended. The circuit resumes operation immediately after the chip
temperature decreases, so the output repeats the ON and OFF states. There are cases in which the IC is destroyed due to
thermal runaway when it is left in the overloaded state. Be sure to avoid leaving the IC in the overloaded state.
• Actions in strong magnetic fields
Use caution when using the IC in the presence of a strong magnetic field as such environments may occasionally cause the chip
to malfunction.
• Back current
In applications where the IC may be exposed to back current flow, it is recommended to create a route t dissipate this current
by inserting a bypass diode between the VIN and VOUT pins.
• GND potential
Ensure a minimum GND pin potential in all operating conditions.
In addition, ensure that no pins other than the GND pin carry a voltage less than or equal to the GND pin, including during
actual transient phenomena.
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© 2009 ROHM Co., Ltd. All rights reserved.
6/8
2009.11 - Rev. B
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
Noise terminal (BH□□MA3WHFV)
The terminal is directly connected to inward normal voltage source. Because this has low current ability, load exceeding
100nA will cause some instability at the output. For such reasons, we urge you to use ceramic capacitors which have less
leak current. When choosing noise the current reduction capacitor, there is a trade-off between boot-up time and stability. A
bigger capacitor value will result in lesser oscillation but longer boot-up time for VOUT.
100
BH30MA3WHFV
~ Condition ~
VIN=4.0V
Cin=1.0µF
10
Co=1.0µF
ROUT=3.0kΩ
Ta=25°C
1
0.1
0.01
100P
1000P
0.01µ
0.1µ
noise-filtering capacitor capacitance Cn (F)
Fig. 35: VOUT startup time vs. noise-filtering capacitor capacitance characteristics (Example)
Regarding input pin of the IC
+ isolation and P substrate layers between adjacent
This monolithic IC contains P
elements in order to keep them isolated. P/N junctions are formed at the intersection of
these P layers with the N layers of other elements to create a variety of parasitic elements.
For example, when a resistor and transistor are connected to pins as shown in Fig.37
The P/N junction functions as a parasitic diode when GND > (Pin A) for the resistor or
GND > (Pin B) for the transistor (NPN).
back current
VCC
OUT
Similarly, when GND > (Pin B) for the transistor (NPN), the parasitic diode described
above combines with the N layer of other adjacent elements to operate as a parasitic
NPN transistor.
CTL
GND
The formation of parasitic elements as a result of the relationships of the potentials of
different pins is an inevitable result of the IC's architecture. The operation of parasitic
elements can cause interference with circuit operation as well as IC malfunction and
damage. For these reasons, it is necessary to use caution so that the IC is not used in a
way that will trigger the operation of parasitic elements, such as by the application of
voltage lower than the GND (P substrate) voltage to input pins.
Fig. 36: Example of bypass
diode connection
Transistor (NPN)
(Terminal B)
B
Resistor
(Terminal B)
(Terminal A)
C
E
E
O
B
GND
N
N
Other adjacent elements
(Terminal A)
GND
Parasitic elements
+
+
P
P
P
+
+
P
P
P
N
N
P
N
N
N
P
P-board
Parasitic element
GND
Parasitic element
GND
Parasitic elements
GND
Fig.37
Part number selection
B H
3 0
F B 1
W
H F V - T R
Package
HFV : HVSOF6
HVSOF5
ROHM
part number voltage
Output
Current capacity Shutdown
Package specification
TR : Embossed taping
MA3 : 300mA
FB1 : 150mA
LB1 : 150mA
switch
W : With switch
G : SSOP5
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© 2009 ROHM Co., Ltd. All rights reserved.
7/8
2009.11 - Rev. B
BH□□FB1WG series, BH□□FB1WHFV series,
BH□□LB1WG series, BH□□LB1WHFV series, BH□□MA3WHFV series,
Technical Note
(Unit:mm)
(Unit:mm)
(Unit:mm)
(1.8MAX.)
+6°
- 4°
2.9±0.2
1.6±0.05
1.6±
0.1
4°
5
4
0.8
6
5
4
0.3
1.0±0.05
4
5
5
4
(1.2)
(1.4)
1
2
3
0.13±0.05
1
2
3
3 2 1
1
2
3
0.145±0.05
0.13 +-0.053
S
0.42 +0.05
-0.04
0.95
0.1 S
0.22±0.05
0.1
0.22±0.05
0.5
0.5
SSOP5
HVSOF5
HVSOF6
(Package Specification) HVSOF6
(Package Specification) SSOP5, HVSOF5
Package Form
Embossed taping
3000pcs
Embossed taping
3000pcs
Package Form
Package Quantity
Package Quantity
Package
Orientation
TR
Package
Orientation
TR
(When the reel is held with the left hand and the tape is drawn out with the right hand,
the No. 1 pin of the product faces the upper right direction.)
(When the reel is held with the left hand and the tape is drawn out with the right hand,
the No. 1 pin of the product faces the upper right direction.)
No. 1 pin
Pulling side
Reel
* Please make orders in multiples of the package quantity.
* Please make orders in multiples of the package quantity.
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© 2009 ROHM Co., Ltd. All rights reserved.
8/8
2009.11 - Rev. B
Notice
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consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
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Please be sure to implement in your equipment using the Products safety measures to guard
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scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller,
fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of
any of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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