BH31PB1WHFV-TR [ROHM]
1ch 150mA CMOS LDO Regulators; 1路150毫安CMOS LDO稳压器
| 型号： | BH31PB1WHFV-TR |
| 厂家： | 
ROHM |
| 描述： | 1ch 150mA CMOS LDO Regulators |
| 文件： | 总11页 (文件大小：346K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□PB1WHFV Series
No.11020EBT05
●Description
The BH□□PB1WHFV regulator series can respond to changes in output current by switching to a state in which regulator
characteristics are ideal. The regulators cut power consumption by lowering their own current consumption to approximately
2 A when the application is operating in the standby state. During normal-current operation it will automatically switch to
high-speed operating mode. The IC's soft start function reduce the rush current that flows to the output capacitors during
startup. The HVSOF5 package, which features excellent heat dissipation, contributes to space-saving application designs.
●Features
1) Automatic switching between low-consumption and high-speed modes
2) Built-in rush current prevention circuit
3) Low-voltage 1.7 V operation
4) High accuracy output voltage: ± 1%
5) Circuit current during low-consumption operation: 2 A
6) Stable with a ceramic capacitor (0.47 µF)
7) Built-in temperature and overcurrent protection circuits
8) Built-in output discharge during standby operation function
9) Ultra-small HVSOF5 power package
●Applications
Battery-driven portable devices, etc.
●Product lineup
□□
150 mA BH
PB1WHFV Series
Product name
1.2
1.5
1.8
2.5
2.8
2.9
3.0
3.1
3.3
Package
HVSOF5
BH□□PB1WHFV
√
√
√
√
√
√
√
√
√
□□
PB1W
a
□
b
Model name: BH
Symbol
Description
Output voltage specification
□□
□□
29
Output voltage (V)
Output voltage (V)
2.9 V (Typ.)
12
15
18
25
28
1.2 V (Typ.)
1.5 V (Typ.)
1.8 V (Typ.)
2.5 V (Typ.)
2.8 V (Typ.)
30
3.0 V (Typ.)
a
31
3.1 V (Typ.)
33
3.3 V (Typ.)
b
Package HFV: HVSOF5
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2011.01 - Rev.B
1/10
© 2011 ROHM Co., Ltd. All rights reserved.
Technical Note
BH□□PB1WHFV Series
●Absolute maximum ratings (Ta = 25°C)
Parameter
Power supply voltage
Power dissipation
Symbol
Ratings
−0.3 to +6.5
410 *1
Unit
V
VMAX
Pd
mW
°C
Operating temperature range
Storage temperature range
Junction temperature
Topr
Tslg
−40 to +85
−55 to +125
125
°C
Tjmax
°C
*1: Reduced by 4.1 mW/°C over 25°C, when mounted on a glass epoxy board (70 mm 70 mm 1.6 mm)
●Recommended operating ranges (not to exceed Pd)
Parameter
Power supply voltage
Output MAX current
Symbol
VIN
Ratings
1.7 to 5.5
0 to 150
Unit
V
IMAX
mA
●Recommended operating conditions
Ratings
Typ.
Parameter
Symbol
Unit
Conditions
Min.
Max.
The use of ceramic capacitors is
recommended.
The use of ceramic capacitors is
recommended.
Input capacitor
CIN
CO
0.33 *2
0.47
−
µF
µF
Output capacitor
0.33 *2
0.47
−
*2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value can not change as time progresses.
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.B
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Technical Note
BH□□PB1WHFV Series
●Electrical characteristics
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V, STBY = 1.5 V, SEL = 0 V, CIN = 0.47 µF, CO = 0.47 µF)
Limits
Parameter
【Regulator】
Symbol
Unit
Conditions
Min.
Typ.
Max..
VOUT1
×0.99
VOUT1
-0.025
VOUT2
×0.97
VOUT1
×1.01
-
-
VOUT≧2.5V,IOUT=0.1mA,SEL=1.5V
VOUT≦1.8V,IOUT=0.1mA,SEL=1.5V
VOUT≧2.5V,IOUT=0.1mA,SEL=0V
VOUT≦1.8V,IOUT=0.1mA,SEL=0V
V
Output voltage
(high-speed mode)
VOUT1
VOUT2
VOUT1
+0.025
VOUT2
×1.038
VOUT2
×1.043
V
-
V
Output voltage
(low-consumption mode)
VOUT2
×0.967
-
V
Circuit current
(high-speed mode)
Circuit current
(low-consumption mode)
IOUT=0mA, VIN pin
monitor,SEL=1.5V
-
-
20
2
40
4
ICC1
ICC2
μA
μA
μA
dB
mV
mV
mV
mV
mV
mV
IOUT=0mA, VIN pin monitor, SEL=0V
STBY=0V
Circuit current (STBY)
-
-
1.0
-
ISTBY
RR1
Ripple rejection ratio
(high-speed mode)
VRR=-20dBv, fRR=1kHz,
IOUT=10mA, SEL=1.5V
42
-
60
100
210
315
2
Dropout voltage 1 *1
Dropout voltage 2 *1
Dropout voltage 3 *1
200
400
600
20
20
40
VIN=VOUT×0.98,IOUT=50mA
VIN=VOUT×0.98,IOUT=100mA
VIN=VOUT×0.98,IOUT=150mA
VIN=VOUT+1V to 5.5V,IOUT=10mA
VIN=VOUT+1V to 5.5V,IOUT=100μA
IOUT=10mA to 100mA
VSAT1
VSAT2
VSAT3
VDL1
VDL2
VDLO
-
-
Line regulation 1
(high-speed mode)
Line regulation 2
(low-consumption mode)
-
-
2
Load regulation
-
10
【Mode switch】
Current threshold
(low-consumption mode)
Current threshold
(high-speed mode)
0.09
-
0.3
1.2
-
SEL=0V IOUT=3mA⇒0mA sweep
SEL=0V IOUT=0mA⇒3mA sweep
ITH1
ITH2
mA
mA
2.2
【Over Current Protection 1】
Limit Current
160
20
300
50
500
100
Vo=VOUT×0.90
Vo=0V
ILMAX
mA
mA
Short current
ISHORT
【Stand-by block】
STBY pin sink current
-
2
4
STBY=1.5V
STBY=0V
ISTB
μA
1.5
-0.3
-
-
VIN
0.3
ON VSTBH
OFF VSTBL
V
V
STBY control voltage
Discharge resistance at standby
【SEL PIN】
1.5
2.2
3.0
RDCG
kΩ
Pull-down resistance of SEL pin
0.5
1.0
2.0
RSEL
MΩ
1.5
-0.3
-
-
VIN
0.3
Fixed high speed mode
Automatic switch mode
ON
VSELH
V
V
SEL control voltage
OFF VSELL
* Note: This IC is not designed to be radiation-resistant.
*3: Except at VOUT ≤ 1.5 V.
●Electrical characteristics of each output voltage
Output Voltage
Parameter
Min.
Typ.
120
−
Max.
Unit
Conditions
VCC = 1.7 V
70
150
50
−
−
−
−
−
−
1.2 V
VCC = 2.0 V
100
−
VCC = 1.8 V
Max. output
current
1.5 V
mA
150
75
VCC = 2.2 V
143
−
VCC = VOUT + 0.3 V
VCC = VOUT + 0.6 V
1.8 V ≤ VOUT
150
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2011.01 - Rev.B
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Technical Note
BH□□PB1WHFV Series
●Typical characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IO = 10 mA
0.5
IO = 10 mA
IO = 10 mA
0.0
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
Input Voltage VIN [V]
Input Voltage VIN [V]
Input Voltage VIN [V]
Fig.1 Output Voltage vs Input Voltage
(BH12PB1WHFV)
Fig.2 Output Voltage vs Input Voltage
(BH30PB1WHFV)
Fig.3 Output Voltage vs Input Voltage
(BH33PB1WHFV)
3.5
70
400
IO = no load
60
IO = no load
IO = no load
3.0
2.5
2.0
1.5
1.0
0.5
0.0
300
50
40
200
30
SEL = 1.5 V
SEL = 1.5 V
20
100
10
SEL = 0 V
300 400
SEL = 0 V
0
0
0
100
200
0
1
2
3
4
5
0
50
100
150
Input Voltage VIN [V]
Output Current IOUT [mA]
Output Current IOUT [mA]
(BH33PB1WHFV)
Fig.6 GND Current vs－Input Voltage
(BH30PB1WHFV)
(BH12PB1WHFV)
(BH33PB1WHFV)
(BH30PB1WHFV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
0
100
200
300
400
0
100
200
300
400
Output Current IOUT [mA]
(BH30PB1WHFV)
(BH12PB1WHFV)
Output Current IOUT [mA]
Output Current IOUT [mA]
Fig.8 Output Voltage vs Output Current
(BH30PB1WHFV)
Fig.9 Output Voltage vs Output Current
(BH33PB1WHFV)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
400
300
200
100
0
400
300
200
100
0
0
100
200
300
400
0
50
100
150
0
50
100
150
Output Current IOUT [mA]
Output Current IOUT [mA]
Output Current IOUT [mA]
Fig.10 Dropout voltage vs Output Current
(BH18PB1WHFV)
Fig.12 Dropout voltage vs Output Current
(BH33PB1WHFV)
Fig.11 Dropout voltage vs Output Current
(BH30PB1WHFV)
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2011.01 - Rev.B
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Technical Note
BH□□PB1WHFV Series
4
3
2
1
0
3.2
3.1
3.0
2.9
2.8
6
5
4
3
2
1
0
0.0
1.0
2.0
VSTBY[V]
3.0
4.0
5.0
0.0
0.5
1.0
VSTBY[V]
1.5
2.0
-50
-25
0
25
Temp[
50
75
100
]
℃
Fig.14 Standby Pin Threshold
(BH30PB1WHFV)
Fig.13 Output Voltage vs Temperature
(BH30PB1WHFV)
Fig.15 Standby Pin Sink Current
(BH30PB1WHFV)
80
70
60
50
40
30
80
70
60
50
40
30
20
10
SEL
1 V / div
SEL = 0 V 1.5
VOUT
50 mV / div
10 ms / div
Co = 0.47 µF
IO = 10 mA
Co = 0.47 µF
IO = 10 mA
20
IO = no load
10
100
100
1 k
10 k
100
1 M
1 k
10 k
100
1 M
Frequency f[Hz]
Frequency f[Hz]
Fig.17 Ripple Rejection
(BH30PB1WHFV)
Fig.16 Ripple Rejection
(BH12PB1WHFV)
Fig.18 Output Voltage Waveform
During SEL Switching
(BH30PB1WHFV)
IOUT = 0 mA 10 mA
IOUT = 1 mA 30 mA
IOUT = 1 mA 100
50 mV / div
50 mV / div
100 mV / div
VOUT
VOUT
VOUT
SEL = 0 V
200 s / div
100 s / div
200 s / div
SEL = 1.5 V
(power-saving operation)
Fig.20 Load Response (Co=1.0 µF)
(BH30PB1WHFV)
Fig.21 Load Response (Co=1.0 µF)
(BH30PB1WHFV)
Fig.19 Load Response (Co = 1.0 µF)
(BH30PB1WHFV)
100 m
Rss = 10 k,
IO = no load
1 V / div
1 V / div
STBY
STBY
10 m
VOUT
1 V / div
Co = 0.47 µF
Co = 2.2 µF
Co = 1 µF
1.0µ
Co = 0.47 µF
Co = 10 µF
VOUT
1 V / div
10 ms / div
200 s / div
100 µ
0.01µ
0.1 µ
1.0µ
Slow start capacitance Css (F)
Fig.22 Output Voltage Rise Time
(BH30PB1WHFV)
Fig.23 Output Voltage Fall Time
(BH30PB1WHFV)
Fig.24 Soft Start Rise Time
(BH30PB1WHFV)
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Technical Note
BH□□PB1WHFV Series
●Block diagram, recommended circuit diagram, and pin assignment table
BH□□PB1WHFV
PIN No.
Symbol
STBY
GND
Function
1
2
3
4
Output voltage on/off control(High: ON, Low: OFF)
Ground
VIN
Power supply input
Voltage output
VOUT
Mode switching
5
SEL
(High: Fix in high-speed mode
Low: Automatic low-consumption mode switching)
VIN
3
CH1
-
-
+
Cin
THERMAL &
OVER CURRENT
PROTECTION
VOLTAGE
REFERENCE
VOUT
GND
4
2
Co
-
-
+
CH2
DISCHARGE
SOFFT
START
Cin … 0.47 µF
Co … 0.47 µF
CURRENT
MONITOR
STBY
Rss
SEL
CONTROL
BLOCK
1
5
(
)
(
)
Css
Fig.25
●Auto Power-saving Function
The IC incorporates a built-in auto power-saving function that
continuously monitors the output current and switches
automatically between a low current consumption regulator
and a high-speed operation regulator. This function reduces
the regulator's own current consumption to approximately 1/10
or lower of normal levels when the output current falls below
approximately 300 A.
30
20
10
0
Measurement conditions
BH12PB1WHFV
VCC = 2.2 V
High-speed mode
VSEL = open,
VSTBY = 1.5 V
Low-consumption mode
To operate only the high-speed operation regulator without
0
0.5
1
1.5
2
2.5
3
using the auto power-saving function, fix the SEL pin to high.
Output current
IOUT [mA]
ꢀ
Fig.26 Auto Power-Saving Function (Example)
●Power Dissipation (Pd)
1. Power Dissipation (Pd)
2. Power Dissipation/Heat Reduction (Pd)
Power dissipation calculations include estimates of power
dissipation characteristics and internal IC power consumption, and
should be treated as guidelines. In the event that the IC is used in
an environment where this power dissipation is exceeded, the
attendant rise in the junction temperature will trigger the thermal
shutdown circuit, reducing the current capacity and otherwise
degrading the IC's design performance. Allow for sufficient margins
so that this power dissipation is not exceeded during IC operation.
HVSOF5
0.6
*Circuit design
should allow a
sufficient
margin for the
temperature
410 mW
0.4
0.2
0
range so that
PMAX < Pd.
Calculating the maximum internal IC power consumption (PMAX)
0
25
50
Ta[
75
100
125
]
℃
Fig.27 HVSOF5 Power Dissipation
vs Heat Reduction (Example)
VIN : Input voltage
PMAX = (VIN - VOUT) IOUT (MAX.)
VOUT : Output voltage
IOUT (MAX) : Max. output current
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2011.01 - Rev.B
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Technical Note
BH□□PB1WHFV Series
●Input Output capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors will be used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. When selecting ceramic capacitors, use X5R or X7R, or better models that offer good temperature and DC
bias characteristics and high tolerant voltages.
Typical ceramic capacitor characteristics
120
100
80
60
40
20
0
100
95
90
85
80
75
70
120
100
80
60
40
20
0
50 V rated voltage
16 V rated voltage
50 V rated voltage
X7R
X5R
Y5V
10V
rated voltage
16 V rated voltage
10 V
rated voltage
-25
0
25
Temp[℃]
50
75
0
1
2
3
4
0
1
2
3
4
DC bias Vdc (V)
DC bias Vdc (V)
Fig.28 Capacitance vs Bias
(Y5V)
Fig.29 Capacitance vs Bias
(X5R, X7R)
Fig.30 Capacitance vs Temperature
(X5R, X7R, Y5V)
●Output capacitors
Mounting input capacitor between input pin and GND(as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value goes
lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers.
BH□□PB1WHFV
100
10
Stable region
1
COUT = 0.47 µF
Ta = +25°C
0.1
0.01
0
50
100
mA)
150
Output Current
Ｉｏ （
Fig.31 Stable Operation Region (Example)
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Technical Note
BH□□PB1WHFV Series
●Notes for use
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break
down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any over rated
values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Ground wiring patterns
The power supply and ground lines must be as short and thick as possible to reduce line impedance. Fluctuating voltage
on the power ground line may damage the device.
6. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures.
7. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to
malfunction.
8. Back current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
OUT
STBY GND
Fig.32 Example Bypass Diode Connection
9. I/O voltage difference
Using the IC in automatic switching mode when the I/O voltage differential becomes saturated (VIN - VOUT < 150 mV)
may result in a large output noise level. If the noise level becomes problematic, use the IC with the SEL pin in the high
state when the voltage differential is saturated.
10.GND Voltage
The potential of GND pin must be minimum potential in all operating conditions.
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Technical Note
BH□□PB1WHFV Series
11. Preventing Rush Current
By attaching the Rss and Css time constants to the STBY pin, sudden rises in the regulator output voltage can be
prevented, dampening the flow of rush current to the output capacitors. The larger the time constant used, the greater the
resulting reduction. However, large time constants also result in longer startup times, so the constant should be selected
after considering the conditions in which the IC is to be used.
100
Rss = 10 k
IO = no load
10
1.0 m
100
0.01
0.1
1.0
Slow start capacitance Css (F)
Fig.33 VOUT Startup Time vs CSS Capacitance (Reference)
12.Regarding input Pin of the IC (Fig.34)
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
B
Pin A
Pin B
Pin B
C
E
Pin A
B
C
E
N
N
N
P+
P+
P+
P+
N
P
P
Parasitic
element
N
N
Parasitic
element
P substrate
P substrate
GND GND
GND
GND
Parasitic element
Parasitic element
Other adjacent elements
Fig.34
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2011.01 - Rev.B
9/10
Technical Note
BH□□PB1WHFV Series
●Ordering part number
B H
3 0
P B 1
W
H F V - T R
Part No.
Output voltage Series
Shutdown
switch
W : Includes
switch
Package
HFV : HVSOF5
Packaging and forming specification
TR: Embossed tape and reel
12: 1.2 V
15: 1.5 V
18: 1.8 V
25: 2.5 V
28: 2.8 V
29: 2.9 V
30: 3.0 V
31: 3.1 V
33: 3.3 V
PB1:Auto power-
saving type
HVSOF5
<Tape and Reel information>
1.6 0.05
(0.8)
(0.3)
Tape
Embossed carrier tape
3000pcs
Quantity
1.0 0.05
TR
Direction
of feed
5
1
4
3
4
5
The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
3
2 1
2
1pin
0.13 0.05
S
0.1
0.22 0.05
S
0.5
M
Direction of feed
Order quantity needs to be multiple of the minimum quantity.
0.08
Reel
(Unit : mm)
∗
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Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
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