BH33RB1WGUT-E2 [ROHM]
1ch 150mA CMOS LDO Regulators; 1路150毫安CMOS LDO稳压器
| 型号： | BH33RB1WGUT-E2 |
| 厂家： | 
ROHM |
| 描述： | 1ch 150mA CMOS LDO Regulators |
| 文件： | 总9页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CMOS LDO Regulators for Portable Equipments
1ch 150mA
CMOS LDO Regulators
BH□□RB1WGUT series
No.11020ECT03
●Description
The BH□□RB1WGUT series is a line of 150 mA output CMOS regulators that deliver a highly stable precision (± 1%) output
voltage. Proprietary ROHM technology enables a small load regulation of 2 mV and a dropout voltage of 100 mV.
At just 1.0 mm 1.04 mm, the new VCSP60N1 package is extremely compact, and the IC's enhanced protection circuits
contribute to improved end products characteristics.
●Features
1) High accuracy output voltage: ± 1%
2) Dropout voltage: 100 mV (at 100 mA)
3) Stable with ceramic capacitors
4) Low bias current: 34 μA
5) High ripple rejection ratio: 63 dB (Typ., 1 kHz)
6) Output voltage on/off control
7) Built-in overcurrent and thermal shutdown circuits
8) VCSP60N1 WL-CSP package : (1.0×1.04×0.6mm)
●Applications
Battery-driven portable devices, etc.
●Product line
150 mA BH□□RB1WGUT Series
Product name
1.5
1.8
2.5
2.8
2.9
3.0
3.1
3.3
Package
BH□□RB1WGUT
√
√
√
√
√
√
√
√
VCSP60N1
Model name: BH□□RB1W□
a
b
Symbol
Description
Output voltage specification
□□
15
Output voltage (V)
1.5 V (Typ.)
□□
29
Output voltage (V)
2.9 V (Typ.)
a
18
1.8 V (Typ.)
30
3.0 V (Typ.)
25
2.5 V (Typ.)
31
3.1 V (Typ.)
28
2.8 V (Typ.)
33
3.3 V (Typ.)
b
Package GUT: VCSP60N1
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.C
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Technical Note
BH□□RB1WGUT series
●Absolute maximum ratings
Symbol
Ratings
Unit
Parameter
VMAX
Pd
-0.3 to +6.5
530*1
V
mW
°C
Applied supply voltage
Power dissipation
Topr
-40 to +85
Operating temperature range
Tstg
-55 to +125
°C
Storage temperature range
*1: Reduce by 5.3 mW/C over 25C, when mounted on a glass epoxy PCB (7 mm 7 mm 0.8 mm).
●Recommended operating ranges (not to exceed Pd)
Symbol
Ratings
Unit
Parameter
VIN
2.5 to 5.5
0 to 150
V
Power supply voltage
Output current
IOUT
mA
●Recommended operating conditions
Ratings
Typ.
Symbol
Unit
Parameter
Conditions
Min.
0.7*2
Max.
—
The use of ceramic capacitors is
recommended.
Input capacitor
CIN
CO
1.0
1.0
µF
µF
The use of ceramic capacitors is
recommended.
Output capacitor
0.7*2
—
*2: Make sure that the output capacitor value is not kept lower than this specified level across a variety of temperature, DC bias characteristic.
And also make sure that the capacitor value cannot change as time progresses.
●Electrical characteristics
(Unless otherwise specified, Ta = 25°C, VIN = VOUT + 1.0 V*5, STBY = 1.5 V, CIN = 1 µF, CO = 1 µF)
Limits
Symbol
Unit
Parameter
Conditions
Min.
Typ.
Max.
VOUT
0.99
VOUT
- 25 mV
VOUT
1.01
VOUT
+ 25 mV
IOUT = 1 mA, Ta = 25°C,
BH25RB1WGUT or higher
Output voltage 1
VOUT1
VOUT
V
IOUT = 1mA, Ta = 25°C,
BH15, 18RB1WGUT
VOUT
0.97
VOUT
1.03
IOUT = 1 mA
Output voltage 2
VOUT2
IGND
ICCST
RR
VOUT
34
V
Ta = -40°C to 85°C*3
IOUT = 0 mA
Circuit current
—
—
—
—
—
—
—
—
0.5
72
1.0
—
µA
µA
dB
Ta = -40°C to 85°C*3
Circuit current (STBY)
Ripple rejection ratio
Dropout voltage
—
STBY = 0 V
VRR = -20 dBV, fRR = 1 kHz,
IOUT = 10 mA
63
VIN = 0.98 VOUT, IOUT = 100 mA
(Excluding BH15, 18RB1WGUT)
VSAT
VDLI
100
2
150
20
mV
mV
mV
mA
mA
µA
IOUT = 10 mA
Line regulation
VIN = VOUT + 0.5 V to 5.5 V*4
Load regulation
VDLO
ILMAX
ISHORT
ISTBY
2
30
IOUT = 1 mA to 100 mA
VO = VOUT 0.98
VO = 0 V
Overcurrent protection limit current
Short current
300
40
—
—
STBY pin current
1.3
3.6
Ta = -40°C to 85°C*3
ON
STBY control voltage
OFF
VSTBH
VSTBL
1.2
—
—
VIN
0.2
V
V
Ta = -40°C to 85°C*3
Ta = -40°C to 85°C*3
-0.2
* This IC is not designed to be radiation-resistant.
*3: These specifications are guaranteed by design.
*4: For BH15, 18RB1WGUT, VIN = 3.0 V to 5.5 V.
*5: For BH15, 18RB1WGUT, VIN = 3.5 V.
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.01 - Rev.C
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Technical Note
BH□□RB1WGUT series
●Typical characteristics
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
Input Voltage VIN[V]
Input Voltage VIN[V]
Input Voltage VIN[V]
Fig. 2 Output Voltage vs Input Voltage
(BH28RB1WGUT)
Fig. 1 Output Voltage vs Input Voltage
(BH15RB1WGUT)
Fig. 3 Output Voltage vs Input Voltage
(BH33RB1WGUT)
60
50
40
30
20
10
0
60
50
40
30
20
10
0
60
50
40
30
20
10
0
0
1
2
3
4
5
0
1
2
3
4
5
0
1
2
3
4
5
Input Voltage VIN[V]
Input Voltage VIN[V]
Input Voltage VIN[V]
Fig. 4 GND Current vs Input Voltage
(BH15RB1WGUT)
Fig. 6 GND Current vs Input Voltage
(BH33RB1WGUT)
Fig. 5 GND Current vs Input Voltage
(BH28RB1WGUT)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
0
100
200
300
400
0
100
200
300
400
Output Current IOUT[mA]
Output Current IOUT[mA]
Output Current IOUT[mA]
Fig. 8 Output Voltage vs Output Current
(BH28RB1WGUT)
Fig. 7 Output Voltage vs Output Current
(BH15RB1WGUT)
Fig. 9 Output Voltage vs Output Current
(BH33RB1WGUT)
200
150
100
50
0.5
0.4
0.3
0.2
0.1
0.0
0
0
50
100
150
0
50
100
150
Output Current IOUT[mA]
Output Current IOUT[mA]
Fig. 11 Dropout Voltage vs Output Current
(BH33RB1WGUT)
Fig. 10 Dropout Voltage vs Output Current
(BH28RB1WGUT)
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2011.01 - Rev.C
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© 2011 ROHM Co., Ltd. All rights reserved.
Technical Note
BH□□RB1WGUT series
2.90
2.85
2.80
2.75
2.70
3.40
3.35
3.30
3.25
3.20
1.60
1.55
1.50
1.45
IOUT=1mA
IOUT=1mA
IOUT=1mA
1.40
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
-50
-25
0
25
50
75
100
Temp[ ]
℃
Temp[ ]
℃
Temp[ ]
℃
Fig. 14 Output Voltage vs Temperature
(BH33RB1WGUT)
Fig. 13 Output Voltage vs Temperature
(BH28RB1WGUT)
Fig. 12 Output Voltage vs Temperature
(BH15RB1WGUT)
80
70
60
50
40
80
70
60
50
40
30
80
70
60
50
40
30
30
Co=1.0μF
Io=10mA
Co=1.0μF
Io=10mA
Co=1.0μF
Io=10mA
20
20
20
10
10
10
100
1 k
10 k
100 k
1M
100
1 k
10 k
100 k
1M
100
1 k
10 k
Frequency f[Hz]
100 k
1M
Frequency f[Hz]
Frequency f[Hz]
Fig. 16 Ripple Rejection
(BH28RB1WGUT)
Fig. 15 Ripple Rejection
(BH15RB1WGUT)
Fig. 17 Ripple Rejection
(BH33RB1WGUT)
IOUT = 1 mA → 30 mA
VOUT
50 mV/div
VOUT
50 mV/div
VOUT
50 mV/div
50 μs/div
50 μs/div
50 μs/div
Fig, 20 Load Response (Co = 1.0 μF)
Fig. 18 Load Response (Co = 1.0 μF)
Fig. 19 Load Response (Co = 1.0 μF)
(BH33RB1WGUT)
(BH15RB1WGUT)
(BH28RB1WGUT)
1 V/div
1 V/div
1 V/div
STBY
STBY
STBY
1 V/div
1 V/div
Co = 1 μF
Co = 1 μF
RL = 3.3 kΩ
RL = 2.8 kΩ
Co = 1 μF
1 V/div
RL = 1.5 kΩ
Co = 2.2 μF
100 μs/div
Co = 2.2 μF
100 μs/div
VOUT
VOUT
VOUT
Co = 2.2 μF
100 μs/div
Fig. 22 Output Voltage Rise
Time
Fig. 21 Output Voltage Rise Time
(BH15RB1WGUT)
Fig. 23 Output Voltage Rise Time
(BH33RB1WGUT)
(BH28RB1WGUT)
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© 2011 ROHM Co., Ltd. All rights reserved.
Technical Note
BH□□RB1WGUT series
●Block Diagram, Recommended Circuit Diagram, and Pin Assignment Diagram
BH□□RB1WGUT
Pin No.
Symbol
VIN
Function
B2
Power supply input
VIN
VIN
B2
B1
VOUT
GND
Voltage output
Ground
VOLTAGE
REFERENCE
VOUT
Cin
VOUT
B1
A1
A2
Output voltage on/off control
(High: ON, Low: OFF)
THERMAL
PROTECTION
A1
A2
GND
STBY
Co
OVER CURRENT
PROTECTION
1PIN MARK
2
1
VSTBY
CONTROL
BLOCK
STBY
A
B
Cin: 1.0 µF
Co: 1.0 µF
Fig. 24
TOP VIEW (Mark side)
●Power Dissipation (Pd)
1. Power dissipation (Pd)
Power dissipation calculations include output power dissipation characteristics and internal IC power consumption. In
the event that the IC is used in an environment where this power dissipation is exceeded, the attendant rise in the
junction temperature will trigger the thermal shutdown circuit, reducing the current capacity and otherwise degrading the
IC's design performance. Allow for sufficient margins so that this power dissipation is not exceeded during IC operation.
Calculating the maximum internal IC power consumption (PMAX)
PMAX = (VIN - VOUT) IOUT (MAX.)
VIN: Input voltage
VOUT: Output voltage
IOUT (MAX): Output current
2. Power dissipation/power dissipation reduction (Pd)
VCSP60N1
0.6
530 mW
Board: 7 mm 7 mm 0.8 mm
Material: Glass epoxy PCB
0.4
0.2
0
0
25
50
Ta[
75
100
125
]
℃
*Circuit design should allow a sufficient margin for the temperature range for PMAX < Pd.
Fig. 25 VCSP60N1 Power Dissipation/Power Dissipation Reduction (Example)
●Input Output Capacitors
It is recommended to insert bypass capacitors between input and GND pins, positioning them as close to the pins as
possible. These capacitors are used when the power supply impedance increases or when long wiring paths are used, so
they should be checked once the IC has been mounted. Ceramic capacitors generally have temperature and DC bias
characteristics. Use X5R or X7R ceramic capacitors, which offer good temperature and DC bias characteristics as well as
stable high voltages.
Typical ceramic capacitor characteristics
120
00
80
60
40
20
0
100
95
90
85
80
75
70
120
100
80
60
40
20
0
50 V torelance
50 V
torelance
X7R
X5R
16 V torelance
Y5V
10 V torelance
16 V torelance
10 V torelance
0
1
2
3
4
-25
0
25
Temp[
50
75
0
1
2
3
4
DC bias Vdc (V)
]
DC bias Vdc (V)
℃
Fig. 28 Capacitance vs Temperature
(X5R, X7R, Y5V)
Fig.27 Capacitance vs Bias
(X5R, X7R)
Fig. 26 Capacitance vs Bias (Y5V)
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Technical Note
BH□□RB1WGUT series
●Output capacitors
Mounting input capacitor between input pin and GND (as close to pin as possible), and also output capacitor between output
pin and GND(as close to pin as possible) is recommended. The input capacitor reduces the output impedance of the voltage
supply source connected to the VCC. The higher value the output capacitor goes the more stable the whole operation
becomes. This leads to high load transient response. Please confirm the whole operation on actual application board.
Generally, ceramic capacitor has wide range of tolerance, temperature coefficient, and DC bias characteristic. And also its value
goes lower as time progresses. Please choose ceramic capacitors after obtaining more detailed data by asking capacitor makers.
BH□□RB1WGUT
100
COUT = 1.0 µF
Ta = +25°C
10
1
Stable region
0.1
0.01
0
50
100
150
Output Current Iout [mA]
Fig. 29 Stable Operating Region Characteristics (Example)
●Operation Notes
1. Absolute maximum ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can
break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open circuit. If any
over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection devices, such as
fuses.
2. Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating conditions.
3. Inter-pin shorts and mounting errors
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any
connection error or if pins are shorted together.
4. Thermal shutdown circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit is designed only to shut
the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation. Do not
continue to use the IC after operating this circuit or use the IC in an environment where the operation of this circuit is
assumed.
5. Overcurrent protection circuit
The IC incorporates a built-in overcurrent protection circuit that operates according to the output current capacity. This
circuit serves to protect the IC from damage when the load is shorted. The protection circuit is designed to limit current
flow by not latching in the event of a large and instantaneous current flow originating from a large capacitor or other
component. These protection circuits are effective in preventing damage due to sudden and unexpected accidents.
However, the IC should not be used in applications characterized by the continuous operation or transitioning of the
protection circuits. At the time of thermal designing, keep in mind that the current capability has negative characteristics to
temperatures.
6. Actions in strong electromagnetic field
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to malfunction.
7. Ground wiring patterns
When using both small signal and large current GND patterns, it is recommended to isolate the two ground patterns,
placing a single ground point at the ground potential of application so that the pattern wiring resistance and voltage
variations caused by large currents do not cause variations in the small signal ground voltage. Be careful not to change the
GND wiring pattern of any external components, either.
8. Influence of strong light
Exposure of the IC to strong light sources such as infrared light from a halogen lamp may cause the IC to malfunction.
When it is necessary to use the IC in such environments, implement measures to block exposure to light from the light
source. During testing, exposure to neither fluorescent lighting nor white LEDs had a significant effect on the IC.
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2011.01 - Rev.C
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Technical Note
BH□□RB1WGUT series
9. GND voltage
The potential of GND pin must be minimum potential in all operating conditions.
10.Back Current
In applications where the IC may be exposed to back current flow, it is recommended to create a path to dissipate this
current by inserting a bypass diode between the VIN and VOUT pins.
Back current
VIN
OUT
STBY
GND
Fig. 30 Example Bypass Diode Connection
11.Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic
measure. Use similar precaution when transporting or storing the IC.
12.Regarding Input Pin of the IC (Fig.31)
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic diode
or transistor. For example, the relation between each potential is as follows:
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be used.
Resistor
Transistor (NPN)
B
Pin A
Pin B
Pin B
B
C
E
Pin A
C
E
N
N
N
P+
P+
P+
P+
N
P
P
Parasitic
element
N
N
Parasitic
element
P substrate
P substrate
GND
GND
GND
GND
Parasitic element
Parasitic element
Other adjacent elements
Fig. 31 Example of IC structure
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2011.01 - Rev.C
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Technical Note
BH□□RB1WGUT series
●Ordering part number
B H
1 5
R B 1
W
G U T - E 2
Part No.
Output voltage Series
Shutdown
switch
W : Includes
switch
Package
GUT: VCSP60N1
Packaging and forming specification
E2: Embossed tape and reel
15: 1.5 V
18: 1.8 V
25: 2.5 V
28: 2.8 V
29: 2.9 V
30: 3.0 V
31: 3.1 V
33: 3.3 V
RB1 : High ripple
rejection
VCSP60N1
1Pin MARK
<Tape and Reel information>
Embossed carrier tape
Tape
3000pcs
E2
Quantity
1.00 0.1
Direction
of feed
(The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand.)
S
0.08
S
4-φ0.3 0.05
A
1234
1234
1234
1234
1234
1234
0.05 A B
B
B
A
Direction of feed
1Pin
Reel
1
2
0.25 0.1
0.5
(Unit:mm)
※When you order , please order in times the amount of package quantity.
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2011.01 - Rev.C
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Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
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obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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