BM1R00178F [ROHM]

BM1R00178F是用于二次测输出段的同步整流控制器。内置低功耗高精度分流稳压器，可减少待机功耗。分流稳压器由完全独立芯片构成，因此即使在High Side使用时，也可作为GND基准工作。连续模式工作时，可以不输入一次侧开关同步信号进行动作，有助于进一步节省空间。工作电源电压范围广，为2.7V～32V，可应对各种输出的应用。采用高耐压120V(Max)处理器，可直接监视漏极电压。;


型号：	BM1R00178F
厂家：	ROHM
描述：	BM1R00178F是用于二次测输出段的同步整流控制器。内置低功耗高精度分流稳压器，可减少待机功耗。分流稳压器由完全独立芯片构成，因此即使在High Side使用时，也可作为GND基准工作。连续模式工作时，可以不输入一次侧开关同步信号进行动作，有助于进一步节省空间。工作电源电压范围广，为2.7V～32V，可应对各种输出的应用。采用高耐压120V(Max)处理器，可直接监视漏极电压。开关控制器稳压器
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中文：	中文翻译
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Datasheet

Built-in Low Consumption and High Accuracy Shunt Regulator

High Efficiency, Low Standby Power and

CCM Corresponding

Secondary Side Synchronous Rectification

Controller IC

BM1R00178F

General Description

Key Specifications

BM1R00178F is synchronous rectification controller to be

used in the secondary side output. It has a built-in low

consumption and high accuracy shunt regulator, which

reduces standby power. Since the shunt regulator is

made up of completely independent chips, it can operate

as a GND reference even when it is used with High Side.

At continuous conduction mode (CCM) operation, further

space saving can be realized when operating without the

input switching synchronizing signal of the primary side.

BM1R00178F also feature a wide operating supply

voltage of 2.7V to 32V for various output applications.

In addition, by adopting the high voltage 120V (Max)

process, it is possible to monitor the drain voltage directly.

 Supply Voltage

 Circuit Current (No Switching):

 DRAIN Monitor Pin Absolute Voltage: 120V(Max)

 Operating Temperature Range: -40°C to +105°C

2.7V to 32V

800µA(Typ)

Package

W(Typ) x D(Typ) x H(Max)

5.00mm x 6.20mm x 1.71mm

SOP8

Features

 Built-in Low Consumption and High Accuracy Shunt

Regulator, which Reduces Standby Power

 Synchronous Rectification FET Layout: High/Low

Side

 120V (Max) High Voltage Process DRAIN Monitor Pin

 Wide Supply Voltage Range of 2.7V to 32V

 Supports Drive Type: PWM, QR and LLC Controller

etc.

Applications

 No Input Required on the Primary-Side at CCM

 Built-in Over Voltage Protection for SH_IN and

SH_OUT Pin



AC/DC Output Power Conversion Applications:

Charger, Adapter, TV, Rice Cooker, Humidifier, Air

Conditioning, Vacuum Cleaner, etc.

 Built-in Thermal Shutdown Function

Typical Application Circuits

D₂

M₁

C_VCC

V_OUT

C_VCC

R_DRAIN1

DRAIN

VCC

R_DRAIN2

L_FB1

DRAIN

VCC

Primary

Controler

D₁

SR_GND

D₁

SH_IN

SR_GND

SH_IN

C_OUT

Primary

Controler

GATE

SH_OUT

SH_GND

C_OUT

GATE

SH_OUT

SH_GND

R_{MAX_TON}

R₁C₁

MAX_TON

GND

R₁

C₁

R_{MAX_TON}

GND

M₁

Figure 1. Flyback Application Circuit (Low side FET)

Figure 2. Flyback Application Circuit (High side FET)

〇Product structure : Silicon monolithic integrated circuit 〇This product has no designed protection against radioactive rays

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Pin Configuration

(TOP VIEW)

VCC

SH_IN

DRAIN

SR_GND

SH_OUT

SH_GND

GATE

MAX_TON

Pin Description

Pin No.

Pin Name

VCC

Function

Power supply input

Shunt regulator reference input

SH_IN

SH_OUT

SH_GND

MAX_TON

GATE

Shunt regulator power supply / output

Shunt regulator GND

Set maximum on time

Secondary side FET GATE drive

Synchronous rectification GND

Secondary side FET DRAIN monitor

SR_GND

DRAIN

Block Diagram

V_OUT

GND

Primary

Side

Controller

SHUNT

LDO BLOCK

REGULATOR

DRAIN COMP

0.800V

(Typ)

PROTECTION BLOCK

・SH_IN_OVP

・SH_OUT_OVP

・TSD

Timer

Auto

Restart

V_CCx1.4

SET COMP

-100mV

(Typ)

MAX_TON

SR_GND

MAX_TON

BLOCK

RESET COMP

Compulsion

OFF Time

-6mV

(Typ)

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Description of Block

1. SET_COMP Block

Monitors the DRAIN pin voltage, and outputs a signal to turn on the FET if the DRAIN pin voltage is less than or equal to

-100mV (Typ).

2. RESET_COMP Block

Monitors the DRAIN pin voltage and outputs a signal to turn off the FET if the DRAIN pin voltage is more than or equal

to -6mV (Typ).

3. Compulsion OFF Time Block

When the FET is turned OFF due to RESET COMP detection, resonance waveforms appear on the DRAIN pin. To

prevent the resonance waveforms from turning on the FET, an OFF state should be forced for a certain time.

Operation sequence of each block is shown on the figure below.

V_OUT

Secondary Side

DRAIN

-6mV

-100mV

-6mV

-100mV

-6mV

-100mV

SET COMP

RESET

RESET COMP

OFF

Secondary side

GATE

Compulsion

OFF Time

OFF

Time

OFF

Time

Figure 3. Operation sequence

About Maximum Input Frequency

The Maximum Operating Frequency of the IC depends on the Compulsion OFF Time. For example, BM1R00178F

Compulsion OFF Time is equal to 3.000μs. Considering a variation of 9%, the maximum input frequency is given by the

following:

푓_푀퐴푋

= ꢀꢁ5

[kHz]

(

)

3.000 µ푠 ×1.09

However, because the frequency largely fluctuates depending on the input voltage, load conditions, etc., it will be different

for each application.

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Description of Block – continued

4. MAX_TON Block

MAX_TON block sets the maximum ON time. The rising edge whose DRAIN pin voltage is equal to or more than the

output voltage V_CCx 1.4 V (Typ) is detected and counting is started. In addition, the synchronous rectification FET will be

forced OFF after the set time has elapsed.

The relationship between the resistance value (R_{MAX_TON}) and set time (t_{MAX_ON}) is described as follows:

푡_{푀퐴푋_푇푂푁}[ꢂs] × ꢃꢁ [kΩ/ꢂs] = 푅_{푀퐴푋_푇푂푁}[kΩ]

Calculation Example:

If you want to set the maximum ON time to 10µs, the value of R_{MAX_TON}is as follows:

ꢃꢁ [ꢂs] × ꢃꢁ [kΩ/ꢂs] = ꢃꢁꢁ [kΩ]

However, the formula above is for an ideal approximation only. It is strongly advised that the operation of the actual

application should be verified.

By setting this time, it becomes possible to prevent the simultaneous ON operation of the primary side and the secondary

side in CCM.

The drive sequence in CCM operation is shown in the figure below:

V_OUT

(3)

(1)

I₂

V_F

I₁

GND

V_G1

L_FB

R_DRAIN2

V_G1

V_G2

Primary

Side

Controller

R_DRAIN1

D₁

I₁

V_DS2

I₂

LDO BLOCK

V_CC×1.4

DRAIN COMP

V_CCx1.4

SET COMP

V_DS2

C₁R₁

-100mV

(Typ)

-V_F

(6)

MAX_TON

BLOCK

(4)

R_{MAX_TON}

V_G2

t_{MAX_ON}

RESET COMP

MAX_TON

timer

Compulsion

OFF Time

Period allotted for V_G1and V_G2

to avoid concurrent ON state

at CCM.

-6mV

(Typ)

(5)

(2)

Figure 4. The drive sequence in CCM operation

(1) Primary side FET = ON. Current I₁flows to the primary side FET. Secondary side drain voltage V_DS2rises.

(2) The V_DS2= V_CC×1.4 detects the rise edge of the threshold, MAX_TON timer start.

(3) Primary side FET=OFF. Current I₂flows through the Body Diode of the secondary side FET (OFF state).

(4) Secondary side drain voltage V_DS2≤-100mV by current I₂, Secondary side FET=ON.

(5) Elapsed the set time in MAX_TON pin, the secondary side FET = compulsion OFF.

(6) Since the I₂current flows through the Body Diode, V_Fvoltage occurs.

In order to reduce the influence of the switching noise as much as possible, capacitor C₁and resistor R₁in series should

be connected to the MAX_TON pin. It is recommended that the capacitance be about 1000pF and the resistance value

be about 1kΩ. This also serves as phase compensation of MAX_TON pin and therefore should be connected.

For quasi-resonance(QR), LLC application, this function is unnecessary because it basically does not operate in CCM.

The setting method of the MAX_TON pin is invalidated by pulling up to the VCC pin.

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Description of Block – continued

5. SHUNT REGULATOR Block

It is a low consumption, high accuracy shunt regulator that controls the AC/DC output voltage. Since it is a built-in

completely separate chip from the synchronous rectification chip, GND insulation is possible. Therefore, if the FET is

placed on the high side, the synchronous rectification application can also make the shunt regulator the secondary side

GND reference. It can also be used as a protection comparator.

6. PROTECTION Block

When protection is detected, the timer starts counting. After completion, drive the photo coupler from the SH_OUT pin to

stop the primary side drive operation.

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Absolute Maximum Ratings (Ta = 25°C)

Parameter

Symbol

Rating

Unit

-0.3 to +40^{(Note 1)}

V_{MAX_VCC}

V_{MAX_MAX_TON}

V_{MAX_SH_IN}

V_{MAX_SH_OUT}

V_{MAX_GATE}

V_{MAX_DRAIN}

Tjmax

VCC Input Voltage

(Note 1)

MAX_TON Output Voltage

SH_IN Input Voltage

-0.3 to +V_{MAX_VCC}

-0.3 to +40^{(Note 2)}

-0.3 to +15.5^{(Note 1)}

SH_OUT Input/Output Voltage

Gate Output Voltage

Drain Input Voltage

120 ^{(Note 1) (Note 3)}

+150

°C

Maximum Junction Temperature

Storage Temperature

-55 to +150

°C

Tstg

Caution 1: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit

between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is

operated over the absolute maximum ratings.

Caution 2: Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result in deterioration of the

properties of the chip. In case of exceeding this absolute maximum rating, design a PCB boards with thermal resistance taken into consideration by

increasing board size and copper area so as not to exceed the maximum junction temperature rating.

(Note 1) Reference SR_GND.

(Note 2) Reference SH_GND.

(Note 3) When a negative voltage is applied, current flows through the ESD protection device. This current value is about 6mA or less and will require a current

limiting resistor to the DRAIN pin.

Thermal Resistance ^{(Note 4)}

Thermal Resistance (Typ)

Parameter

Symbol

Unit

1s ^{(Note 6)}

2s2p ^{(Note 7)}

SOP8

Junction to Ambient

Junction to Top Characterization Parameter ^{(Note 5)}

θ_JA

197.4

109.8

°C/W

Ψ_JT

(Note 4) Based on JESD51-2A(Still-Air)

(Note 5) The thermal characterization parameter to report the difference between junction temperature and the temperature at the top center of the outside

surface of the component package.

(Note 6) Using a PCB board based on JESD51-3.

(Note 7) Using a PCB board based on JESD51-7.

Layer Number of

Measurement Board

Material

FR-4

Board Size

Single

114.3mm x 76.2mm x 1.57mmt

Top

Copper Pattern

Thickness

70µm

Footprints and Traces

Layer Number of

Measurement Board

Material

FR-4

Board Size

114.3mm x 76.2mm x 1.6mmt

2 Internal Layers

4 Layers

Top

Copper Pattern

Bottom

Copper Pattern

74.2mm x 74.2mm

Thickness

70µm

Copper Pattern

Thickness

35µm

Thickness

70µm

Footprints and Traces

74.2mm x 74.2mm

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Recommended Operating Conditions

Parameter

Symbol

Min

Typ

Max

Unit

V_CC

Topr

2.7

-40

+25

+105

300

Supply Voltage

°C

kΩ

Operating Temperature

MAX_TON R_{MAX_TON}Resistor Range

R_{MAX_TON}

R₁

MAX_TON R₁

MAX_TON C₁

0.5

680

C₁

1000

2200

Electrical Characteristics (Unless otherwise specified V_CC=20V V_{SH_OUT}=20V Ta=25°C)

Spec

Parameter

Circuit Current

Symbol

Unit

Conditions

Min

Typ

Max

f_SW=50kHz at Switching Mode

(GATE=OPEN)

Circuit Current1

I_ON

0.5

Circuit Current2

I_ACT

I_OFF

350

800

1400

µA

Switching Stop Mode

V_CC=1.9V, UVLO Mode

Circuit Current3

VCC Item

VCC UVLO Threshold Voltage1

VCC UVLO Threshold Voltage2

SR Controller BLOCK

GATE Turn ON Threshold

GATE Turn OFF Threshold

Compulsion OFF Time

MAX_TON BLOCK

V_UVLO1

V_UVLO2

2.00

1.95

2.30

2.25

2.65

2.60

V_CCSweep Up

V_CCSweep Down

V_GON

V_GOFF

t_COFF

-150

-10

-100

-6

-50

-1

µs

V_DRAIN=+300mV to -300mV

V_DRAIN=-300mV to +300mV

2.730 3.000 3.270

MAX_TON Timer Start Threshold

Voltage

V_CC=20V

Pulse Input to DRAIN Pin

V_{MAX_ON_START}

R_{MAX_TON}=100kΩ

V_CC=3V, V_DRAIN=-0.3V↔+7V

MAX_TON Timer

t_{MAX_ON}

9.4

10.6

0.56

µs

MAX_TON Output Voltage

Drain Monitor BLOCK

Drain Pin Sink Current

Drain Pin Source Current1

Drain Pin Source Current2

Driver BLOCK

V_{MAX_ON}

0.24

0.40

I_{D_SINK}

130

-23

250

-11

-1

550

-5

µA

V_DRAIN=120V

V_DRAIN=0.1V

V_DRAIN=-0.2V

I_{DRAIN_SO1}

I_{DRAIN_SO2}

-3.0

-0.3

GATE Pin High Voltage

V_{GATE_H1}

R_HIONR1

R_HIONR2

12.0

6.0

4.0

1.1

0.9

23.0

12.0

9.0

2.2

1.8

50.0

24.0

18.0

4.4

3.6

V_CC=20V

High Side FET ON-Resistance1

High Side FET ON-Resistance2

High Side FET ON-Resistance3

Low Side FET ON-Resistance1

Low Side FET ON-Resistance2

Delay Time GATE Pin Turn ON

Delay Time GATE Pin Turn OFF

V_CC=2.7V, I_OUT= -10mA

V_CC=5.0V, I_OUT= -10mA

V_CC=10V, I_OUT= -10mA

V_CC=2.7V, I_OUT= +10mA

V_CC=5.0V, I_OUT= +10mA

V_DRAIN=+300mV to -300mV

V_DRAIN=-300mV to +300mV

R_HIONR3

R_LOWONR1

R_LOWONR2

t_{DELAY_ON}

t_{DELAY_OFF}

100

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Electrical Characteristics - continued

Spec

Typ

Parameter

Shunt Regulator BLOCK

Reference Voltage

Symbol

Unit

Conditions

Min

Max

V_{SH_OUT}=5V

SH_OUT Sink Current=100µA

V_SHREF

∆V_SHEMP

∆V_SHREF1

0.796 0.800 0.804

V_{SH_OUT}=5V

SH_OUT Sink Current=100µA

Ta=+25°C to +105°C

Reference Voltage

Changing Ratio by Temperature

-4

SH_OUT Coefficient

of the Reference Voltage1

V_{SH_OUT}=2.7V to 5V

SH_OUT Sink Current=100µA

SH_OUT Coefficient

of the Reference Voltage2

V_{SH_OUT}=5V to 20V

SH_OUT Sink Current=100µA

∆V_SHREF2

µA

Reference Input Current

I_{SH_IN}

-0.2

0.0

+0.2

V_{SH_IN}=2V

SH_OUT Sink Current

=100µA to 300µA

(V_{SH_OUT}=2.7V)

SH_OUT Sink Current

=100µA to 300µA

(V_{SH_OUT}=20V)

Dynamic Impedance1

R_{SH_OUT1}

0.3

0.2

Dynamic Impedance2

R_{SH_OUT2}

SH_OUT Current at SH_IN=Low

SH_OUT Regulation Current

I_{SH_OUT}

µA

V_{SH_IN}=0V, V_{SH_OUT}=5V

I_{SH_OUT_REG}

V_{SH_IN}=0.85V, V_{SH_OUT}=5V

SH_IN OVP Detection Voltage1

SH_IN OVP Detection Voltage2

SH_OUT OVP Detection Voltage1

SH_OUT OVP Detection Voltage2

V_{SHI_OVP1}

V_{SHI_OVP2}

V_{SHO_OVP1}

V_{SHO_OVP2}

t_PROTECTION

0.90

0.85

32.5

31.5

100

1.00

0.95

1.10

1.05

37.5

36.5

300

V_{SH_IN}Sweep Up

V_{SH_IN}Sweep Down

V_{SH_OUT}Sweep Up

V_{SH_OUT}Sweep Down

200

Protection Detect Timer

SH_OUT Pull Down Current

at Protection Detect Mode

µs

I_PROTECTION

1.3

2.5

5.0

V_{SH_IN}=0V, V_{SH_OUT}=5V

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Typical Performance Curves

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

Ta=+105°C

1.2

Ta=+25°C

Ta=+105°C

1.0

0.8

0.6

0.4

0.2

0.0

Ta=+25°C

Ta=-40°C

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

Supply Voltage : V_CC[V]

Figure 5. Circuit Current2 vs Supply Voltage

(Switching Stop Mode)

Figure 6. Circuit Current2 vs Supply Voltage

(Switching Stop Mode V_CCZoom)

Ta=+105°C

Ta=+25°C

Ta=-40°C

Ta=+105°C

SH_OUT Voltage : V_{SH_OUT}[V]

Figure 7. SH_OUT Regulation Current vs SH_OUT Voltage

(V_{SH_IN}=0.85V)

Figure 8. SH_OUT Current at SH_IN=L vs SH_OUT Voltage

(V_{SH_IN}=0V)

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Typical Performance Curves - continued

0.820

0.815

11.0

10.8

10.6

10.4

10.2

10.0

9.8

V_{SH_OUT}=20V

V_CC=20V

V_CC=5V

0.810

0.805

0.800

0.795

0.790

0.785

0.780

V_{SH_OUT}=5V

V_CC=3V

V_{SH_OUT}=3V

9.6

9.4

9.2

9.0

-40 -20

80 100

-40 -20

80 100

Temperature : Ta [°C]

Figure 9. Reference Voltage vs Temperature

Figure 10. MAX_TON Timer vs Temperature

(SH_OUT Sink Current=100µA)

(R_{MAX_TON}=100kΩ, V_DRAIN=-0.3V↔+7V)

-1

-90

-2

-95

-3

V_{SH_OUT}=3V

V_{SH_OUT}=20V

-4

-5

-100

V_{SH_OUT}=5V

V_{SH_OUT}=20V

-6

V_{SH_OUT}=3V

-7

V_{SH_OUT}=5V

-105

-110

-8

-9

-10

-40 -20

80 100

-40 -20

80 100

Temperature : Ta [°C]

Figure 11. GATE Turn On Threshold vs Temperature

(DRAIN Sweep Down)

Figure 12. GATE Turn Off Threshold vs Temperature

(DRAIN Sweep Up)

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Typical Performance Curves - continued

5000

4000

300

250

200

150

100

Ta=+105°C

3000

Ta=+105°C

Ta=+25°C

Ta=-40°C

2000

Ta=-40°C

1000

740

760

780

800

820

840

860

740

760

780

800

820

840

860

SH_IN Voltage : V_{SH_IN}[mV]

Figure 14. SH_OUT Current vs SH_IN Voltage

(V_{SH_OUT}=5V, I_{SH_OUT}ZOOM UP)

Figure 13. SH_OUT Current vs SH_IN Voltage

(V_{SH_OUT}=5V)

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Timing Chart

The startup sequence is shown below.

DRAIN

2.3V

V_OUT(VCC)

V_CC=2.3V

0.4V

VCC UVLO

MAX_TON

DRAIN

9COUNT

GATE

Figure 15. Startup Sequence

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Application Examples

V_OUT

C_VCC

PC₁

R_DRAIN2

L_FB

DRAIN

VCC

R_FB1

D₁

R_DRAIN1

SR_GND

SH_IN

C_OUT

C_FB1

R_FB2

GATE

SH_OUT

SH_GND

C_FB2

R_{MAX_TON}

MAX_TON

R₁C₁

GND

M₁

Figure 16. Flyback Application Circuit

(Low Side FET)

D₂

M₁

V_OUT

C_VCC

R_FB1

PC₁

DRAIN

VCC

C_OUT

SR_GND

SH_IN

R_FB2C_FB2

C_FB1

SH_OUT

SH_GND

GATE

R_{MAX_TON}

MAX_TON

R₁C₁

GND

Figure 17. Flyback Application Circuit

(High Side FET)

The built-in shunt regulator block is separated in the IC from the synchronous rectification controller. Therefore, if the FET is

placed on the high side, the synchronous rectification application can also make the shunt regulator the secondary side GND

reference.

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Application Examples - continued

M₂

N O T _ X A M

E T A G

D N G _ H S

T U O _ H S

LFB2

DRAIN3

FB3

N I _ H S

C C V

D N G _ R S

N I A R D

DRAIN4

SH_IN pin Shunt regulator is used for OVP.

VCC2

PC₂

RSH_OUT3

V_OUT

For QR, LLC application, this function is

unnecessary because it basically does not operate

in CCM. The setting method of the MAX_TON pin is

invalidated by pulling up to the VCC pin.

VCC1

PC₁

DRAIN

SR_GND

GATE

VCC

FB1

FB2

SH_IN

COUT

CFB1

SH_OUT

SH_GND

CFB2

MAX_TON

Shunt regulator used in feedback operation

FB1

GND

M₁

Figure 18. Resonant half-bridge application circuit

Regarding Protection Applications

The built-in shunt regulator is high voltage, low current consumption and high accuracy, and also suitable as a comparator

for protection application. On the above LLC application, the shunt regulator is used as an overvoltage protection circuit.

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Selection of Components Externally Connected

1. MAX_TON Pin Setting

A resistance value which is connected to the MAX_TON pin is used to set the timer to force the GATE output OFF. (For

detailed operation, please see "Description of Block Operation / MAX_TON Block")

Set timer is proportional to the resistance value which can be set in the range of 56kΩ to 300kΩ. This IC is capable of

an accuracy of 10μs ± 6% at 100kΩ. However, accuracy deteriorates as the resistance value gets further away from

100kΩ. For example, 5.6µs ±0.9µs at 56kΩ, 30µs ±4.5µs at 300kΩ. (See graph below)

34.5µ

30µ

t_P

25.5µ

Jitter

G₁

Set the MAX_TON timer so that

the FET of the primary side (G₁)

and the secondary side (G₂) is not

simultaneously ON

10.6µ

10.0µ

9.4µ

G₂

6.5µ

5.6µ

4.7µ

t_{MAX_ON}

MAX_TON

timer

56k

100k

300k

MAX_TON Resistor(R_{MAX_TON}) [Ω]

Figure 20. Primary FET and secondary FET

Sequence at CCM

Figure 19. MAX_TON Timer vs MAX_TON Resistor

To prevent destruction due to surge current in CCM, set the MAX_TON timer before turning on the primary side FET (G₁)

to forcibly OFF the secondary side FET (G₂). Including such variations, select a resistance value of MAX_TON Pin

(R_{MAX_TON}) so that the MAX_ON timer setting time is less than one cycle in the primary side (t_P> t_{MAX_ON}).

ꢄ

10×10

푅_{푀퐴푋_푇푂푁}

[kΩ]

ꢅ1+훥ꢆ

+훥ꢌ+훥ꢍ

ꢎ×ꢅꢍ

+ꢍ

ꢎ

퐽퐼ꢏꢏ퐸ꢐ

ꢇꢈꢉ_ꢊꢋ

ꢇꢈꢉ

Frequency Variation Ratio

Maximum Frequency Value

where:

f_MAXis the primary side of the maximum frequency [kHz]

∆f_MAXis the primary side of the maximum frequency accuracy [%]

f_JITTERis the primary side of the jitter frequency [kHz]

∆t_{MAX_ON}is Secondary side MAX_TON timer time accuracy [%]

∆R is Secondary side MAX_TON When the connection resistance accuracy [%]

2. Calculation Example

ꢄ

10×10

푅_{푀퐴푋_푇푂푁}

= ꢒ2.ꢓ7

)

1+0.06+0.01+0.0ꢑ × 100+8

[kΩ]

(

)

(

f_MAXis the primary side of the maximum frequency 100[kHz]

∆f_MAXis the primary side of the maximum frequency accuracy 5[%]

f_JITTERis the primary side of the jitter frequency 8[kHz]

∆t_{MAX_ON}is Secondary side MAX_TON timer time accuracy 6[%]

∆R is Secondary side MAX_TON When the connection resistance accuracy 1[%]

With these conditions, MAX_TON Resistor(R_{MAX_TON}) should be set to 82kΩ or less. In addition, it is recommended that

the temperature characteristics of each component should also be taken into account.

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I/O Equivalence Circuits

Pin 1: VCC / Pin 6: GATE / Pin 7: SR_GND

Pin 8: DRAIN

Internal

REG

1.VCC

8.DRAIN

6.GATE

block

7.SR_GND

Pin 2: SH_IN / Pin 3: SH_OUT / Pin 4: SH_GND

Pin 5: MAX_TON

1.VCC

Internal

REG

3.SH_OUT

2.SH_IN

4.SH_GND

5.MAX_TON

7.SR_GND

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Notes on the Layout

V_OUT

(5)

(1)

VCC

PC₁

(6)

(2)

DRAIN

VCC

FB1

SR_GND

SH_IN

OUT

C_FB1

R_FB2

SH_OUT

GATE

C_FB2

MAX_TON

SH_GND

MAX_TON

(5)

R₁

C₁

M₁

(3)

FB1

(8)

R_snb

C_snb

GND

(7)

(4)

Figure 21. Flyback Application Circuit

(Low Side FET)

(1) VCC line may malfunction under the influence of switching noise.

Therefore, it is recommended to insert a capacitor C_VCCbetween the VCC and SR_GND pin.

(2) SH_IN pin is a high impedance line. To avoid crosstalk, electrical wiring should be as short as possible and not in parallel

with the switching line.

(3) MAX_TON pin has a 0.4V output. Therefore, there is a possibility that compulsion OFF time may be affected by the

switching operation, we recommend connecting R_{MAX_TON}, R₁, C₁just before MAX_TON pin output as much as possible

and connecting to SR_GND pin with independent wiring as much as possible. It is also recommended to use an

independent electrical wiring in connection with SR_GND pin.

(4) The synchronous rectification controller IC must accurately monitor the V_DSgenerated in the FET. Accordingly, the

electrical wiring between the DRAIN to DRAIN and SR_GND to SOURCE of the IC and FET respectively should be

connected independently.

(5) The feedback resistors of V_OUTare recommended to be connected to the GND of the output with an independent

electrical wiring.

(6) The DRAIN pin is a switching line. Use a narrow wiring and connect as short as possible.

(7) Use an independent wiring if connecting a snubber circuit between the DS of the FET. The connection of the transformer

output and the SOURCE of the FET should be thick and short as possible.

(8) Due to the DRAIN pin detects the small voltage, a malfunction which the switch turns ON/OFF caused by the surge

voltage may occur. So that, the filters such as the ferrite bead are recommended for alleviating the surge voltage.

Configuration example^{(Note 8)}

L_FB1(a ferrite bead for suppressing the surge voltage): MMZ1608S202ATA00(TDK)

D₁(a schottky barrier diode): RB751G-40(ROHM)

R_DRAIN1(a filter resistor for the FET turn off): 0.3kΩ to 2kΩ

R_DRAIN2(a current limiting resistor to the DRAIN pin): 150Ω

(Note 8) The value is not a guaranteed value, but for reference. Please choose the optimum values of the components after sufficient evaluations based on the

actual application.

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Operational Notes

Reverse Connection of Power Supply

Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when

connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply

pins.

Power Supply Lines

Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to ground at

all power supply pins. Consider the effect of temperature and aging on the capacitance value when using electrolytic

capacitors.

Ground Voltage

Except for pins the output and the input of which were designed to go below ground, ensure that no pins are at a

voltage below that of the ground pin at any time, even during transient condition.

Ground Wiring Pattern

When using both small-signal and large-current ground traces, the two ground traces should be routed separately but

connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal

ground caused by large currents. Also ensure that the ground traces of external components do not cause variations

on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.

Recommended Operating Conditions

The function and operation of the IC are guaranteed within the range specified by the recommended operating

conditions. The characteristic values are guaranteed only under the conditions of each item specified by the electrical

characteristics.

Inrush Current

When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow

instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.

Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing

of connections.

Operation Under Strong Electromagnetic Field

Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.

Testing on Application Boards

When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject

the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should

always be turned off completely before connecting or removing it from the test setup during the inspection process. To

prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and

storage.

Inter-pin Short and Mounting Errors

Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in

damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.

Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and

unintentional solder bridge deposited in between pins during assembly to name a few.

10. Unused Input Pins

Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and

extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge

acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause

unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power

supply or ground line.

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Operational Notes – continued

11. Regarding the Input Pin of the IC

This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them

isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a

parasitic diode or transistor. For example (refer to figure below):

When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.

When GND > Pin B, the P-N junction operates as a parasitic transistor.

Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual

interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to

operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be

avoided.

Resistor

Transistor (NPN)

Pin A

Pin B

Pin A

P⁺

Parasitic

Elements

Parasitic

Elements

P Substrate

GND GND

P Substrate

GND

Parasitic

Elements

Parasitic

Elements

N Region

close-by

Figure 22. Example of monolithic IC structure

12. Ceramic Capacitor

When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with

temperature and the decrease in nominal capacitance due to DC bias and others.

13. Area of Safe Operation (ASO)

Operate the IC such that the output voltage, output current, and the maximum junction temperature rating are all within

the Area of Safe Operation (ASO).

14. Thermal Shutdown Circuit (TSD)

This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always

be within the IC’s maximum junction temperature rating. If however the rating is exceeded for a continued period, the

junction temperature (Tj) will rise which will activate the TSD circuit that will turn OFF power output pins. When the Tj

falls below the TSD threshold, the circuits are automatically restored to normal operation.

Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no

circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from heat

damage.

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Ordering Information

B M 1 R 0

E 2

Part Number

Package

F:SOP8

Packaging and forming specification

E2: Embossed tape and reel

Marking Diagram

SOP8(TOP VIEW)

Part Number Marking

LOT Number

0 0 1 7 8

Pin 1 Mark

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Physical Dimension and Packing Information

Package Name

SOP8

(Max 5.35 (include.BURR))

(UNIT: mm)

PKG: SOP8

Drawing No.: EX112-5001-1

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Revision History

Date

Revision

001

Changes

06.Feb.2018

New Release

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Notice

Precaution on using ROHM Products

1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,

OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you

intend to use our Products in devices requiring extremely high reliability (such as medical equipment ^{(Note 1)}, transport

equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car

accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or

serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.

Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any

damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific

Applications.

(Note1) Medical Equipment Classification of the Specific Applications

JAPAN

USA

CHINA

CLASSⅢ

CLASSⅣ

CLASSⅡb

CLASSⅢ

2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor

products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate

safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which

a failure or malfunction of our Products may cause. The following are examples of safety measures:

[a] Installation of protection circuits or other protective devices to improve system safety

[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure

3. Our Products are designed and manufactured for use under standard conditions and not under any special or

extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way

responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any

special or extraordinary environments or conditions. If you intend to use our Products under any special or

extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of

product performance, reliability, etc, prior to use, must be necessary:

[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents

[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust

[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,

H2S, NH3, SO2, and NO2

[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves

[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items

[f] Sealing or coating our Products with resin or other coating materials

[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of

flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning

residue after soldering

[h] Use of the Products in places subject to dew condensation

4. The Products are not subject to radiation-proof design.

5. Please verify and confirm characteristics of the final or mounted products in using the Products.

6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,

confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power

exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect

product performance and reliability.

7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in

the range that does not exceed the maximum junction temperature.

8. Confirm that operation temperature is within the specified range described in the product specification.

9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in

this document.

Precaution for Mounting / Circuit board design

1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product

performance and reliability.

2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must

be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,

please consult with the ROHM representative in advance.

For details, please refer to ROHM Mounting specification

Notice-PGA-E

Rev.003

Precautions Regarding Application Examples and External Circuits

1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the

characteristics of the Products and external components, including transient characteristics, as well as static

characteristics.

2. You agree that application notes, reference designs, and associated data and information contained in this document

are presented only as guidance for Products use. Therefore, in case you use such information, you are solely

responsible for it and you must exercise your own independent verification and judgment in the use of such information

contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses

incurred by you or third parties arising from the use of such information.

Precaution for Electrostatic

This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper

caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be

applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,

isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).

Precaution for Storage / Transportation

1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:

[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2

[b] the temperature or humidity exceeds those recommended by ROHM

[c] the Products are exposed to direct sunshine or condensation

[d] the Products are exposed to high Electrostatic

2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period

may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is

exceeding the recommended storage time period.

3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads

may occur due to excessive stress applied when dropping of a carton.

4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of

which storage time is exceeding the recommended storage time period.

Precaution for Product Label

A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.

Precaution for Disposition

When disposing Products please dispose them properly using an authorized industry waste company.

Precaution for Foreign Exchange and Foreign Trade act

Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign

trade act, please consult with ROHM in case of export.

Precaution Regarding Intellectual Property Rights

1. All information and data including but not limited to application example contained in this document is for reference

only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any

other rights of any third party regarding such information or data.

2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the

Products with other articles such as components, circuits, systems or external equipment (including software).

3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any

third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM

will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to

manufacture or sell products containing the Products, subject to the terms and conditions herein.

Other Precaution

1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.

2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written

consent of ROHM.

3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the

Products or this document for any military purposes, including but not limited to, the development of mass-destruction

weapons.

4. The proper names of companies or products described in this document are trademarks or registered trademarks of

ROHM, its affiliated companies or third parties.

Notice-PGA-E

Rev.003

Daattaasshheeeett

General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales

representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001

BM1R00178F [ROHM]

相关型号：

BM1Z001FJ

BM1Z002FJ

BM1Z003FJ

BM1Z012FJ

BM1Z101FJ

BM1Z102FJ

BM1Z103FJ

BM2-020

BM2-025

BM2-46

BM2-5

BM2-8