BM2P161W-ZA [ROHM]
AC-DC用PWM方式DC-DC转换器BM2P161W，可为带插座的所有产品提供理想的系统。使用该产品可轻松设计出非隔离型专用的高效率转换器。内置650V耐压启动电路，有助于降低功耗。内置电流检测电阻，可实现小型电源设计。采用电流模式控制，可实现逐周期电流限制，带宽表现和瞬态响应性能优异。开关频率采用固定方式（65kHz）。轻负载时能够降低频率，实现高效率。内置跳频功能，有助于实现更低EMI。内置650V耐压超级结MOSFET，使设计更容易。提供支持各种功率段和拓扑的评估板。a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;};
| 型号： | BM2P161W-ZA |
| 厂家： | 
ROHM |
| 描述： | AC-DC用PWM方式DC-DC转换器BM2P161W，可为带插座的所有产品提供理想的系统。使用该产品可轻松设计出非隔离型专用的高效率转换器。内置650V耐压启动电路，有助于降低功耗。内置电流检测电阻，可实现小型电源设计。采用电流模式控制，可实现逐周期电流限制，带宽表现和瞬态响应性能优异。开关频率采用固定方式（65kHz）。轻负载时能够降低频率，实现高效率。内置跳频功能，有助于实现更低EMI。内置650V耐压超级结MOSFET，使设计更容易。提供支持各种功率段和拓扑的评估板。a.productlink{color: #dc2039; text-decoration: underline !important;}a.productlink:hover {opacity: 0.6;} 开关 DC-DC转换器 插座 |
| 文件： | 总24页 (文件大小：852K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
AC/DC Convertor IC
PWM type DC/DC converter IC
Integrated Switching MOSFET for non-Isolated type
BM2P161W-Z
General Description
Basic Specification
The PWM type DC/DC converter series for AC/DC
provides an optimum system for all products that
include an electrical outlet. It enables simpler design of
a high effective converter specializing in non-isolated
devices.
■Power Supply Voltage Operation Range:
VCC:
DRAIN:
8.00V to 18.16V
to 650V
■Normal Operation Current
■Burst Operation Current
■Oscillation Frequency
■Operation Temperature Range
■MOSFET ON resistor:
1.50mA (Typ.)
0.35mA(Typ.)
65kHz(Typ.)
This series has a built-in HV starter circuit that
tolerates 650V, and it contributes to low power
consumption. With a current detection resistor as
internal device, it can be designed as small power
supply. Since current mode control is utilized, current
is restricted in each cycle and excellent performance is
demonstrated in bandwidth and transient response.
The switching frequency is fixed to 65 kHz. At light
load, the switching frequency is reduced and high
efficiency is achieved. A frequency hopping function is
also on chip, and it contributes to low EMI. In addition,
a built-in super junction MOSFET which tolerates 650V
makes the design easy.
- 40 oC to +105 oC
1.9Ω (Typ.)
Package
DIP7K
W (Typ) x D (Typ) x H (Max)
9.27 mm x 6.35 mm x 8.63 mm
Pitch 2.54 mm
DIP7WF
9.35mm x 6.35mm x 8.10mm
Pitch 2.54mm
Features
◼ PWM frequency: 65kHz
◼ PWM current mode method
◼ Frequency hopping function
◼ Burst operation at light load
◼ Frequency reduction function
◼ Built-in 650V start circuit
◼ Built-in 650V switching MOSFET
◼ VCC pin under voltage protection
◼ VCC pin over voltage protection
◼ Over current limiter function per cycle
◼ Soft start function
Application
Households such as LED lights, air conditioners, and
cleaners, etc.).
Application circuit
D2
5
4
3
VCC
L
GND_IC
VOUT
2
1
6
DRAIN
7
AC
Input
Filter
DRAIN
D1
GND
○Product structure : Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
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Pin Descriptions
ESD Diode
VCC GND_IC
NO.
端子名
I/O
機能
1
2
3
4
5
6
7
-
-
-
-
-
-
-
-
-
✔
-
-
-
GND_IC
-
I/O
-
GND pin
-
-
VCC
DRAIN
DRAIN
I
Power Supply input pin
MOSFET DRAIN pin
MOSFET DRAIN pin
-
✔
✔
✔
I/O
I/O
-
-
Block Diagram
VCC
DRAIN
5
6,7
Starter
VCC UVLO
+
-
Thermal
Internal
Regulator
Protection
100us
Filter
+
-
VCC OVP
Internal Block
Super
Junction
MOSFET
OLP
64ms
/512ms
Timer
+
-
S
R
Q
DRIVER
Burst
Comparator
+
-
Dynamic Current
-
+
PWM Control
Logic
&
Timer
Limitter
+
PWM
Comparator
Reference
Voltage
-
-
Reference
Voltage
Current
Limitter
+
Current
Sensing
Leading-Edge
Blanking Time
+
-
Reference
Voltage
Soft Start
3
MAX
DUTY
GND_IC
Frequency
Hopping
OSC
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Absolute Maximum Ratings (Ta=25 °C)
Parameter
Symbol
Rating
Unit
Conditions
Maximum applied voltage 1
Maximum applied voltage 2
DRAIN current DC 2
Vmax1
Vmax2
IDD2
Pd
Topr
Tjmax
Tstr
-0.3 to 650
-0.3 to 32.0
10.40
1.00
-40 to +105
+150
V
V
A
W
oC
oC
oC
DRAIN
VCC
Consecutive operation
Allowable dissipation
Operating temperature range
Maximum Junction Temperature
Storage temperature range
Surrounding temperature
-55 to +150
(Note1) Derate by 8mW/°C when operating above Ta = 25°C when mounted (on 70 mm × 70 mm, 1.6 mm thick, glass epoxy on single-layer substrate).
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over the
absolute maximum ratings.
Recommended operating condition (Ta=25 °C)
Parameter
Symbol
Rating
Unit
Conditions
Power supply voltage range 1
Power supply voltage range 2
VDRAIN
VCC
~650
8.00 to 18.16
V
V
DRAIN
VCC
Electrical Characteristics in MOSFET part (Unless otherwise noted, Ta=25 °C VCC=15V)
Specifications
Minimum Standard Maximum
Parameter
Symbol
Unit
Conditions
Voltage between DRAIN and
SOURCE
V(BR)DDS
650
-
-
V
ID=1mA / VGS=0V
DRAIN leak current
ON resistor2
IDSS
RDS(ON)2
-
-
0
1.9
100
2.6
uA
Ω
VDS=650V / VGS=0V
ID=0.25A / VGS=10V
Electrical Characteristics in Start circuits part (Unless otherwise noted, Ta=25 °C VCC=15V)
Specifications
Minimum Standard Maximum
Parameter
Symbol
Unit
Conditions
Start current 1
Start current 2
OFF current
Start current switching voltage
ISTART1
ISTART2
ISTART3
VSC
0.150
1.000
-
0.300
3.000
10
2.800
6.000
20
mA
mA
uA
V
VCC= 0V
VCC=10V
After UVLO is released
0.400
0.800
1.300
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Electrical Characteristics in Control IC part (Unless otherwise noted, Ta=25 °C VCC=15V)
Specifications
Parameter
[Circuit current]
Symbol
Unit
Conditions
Minimum
Standard Maximum
At pulse operation
Drain = open
Circuit current (ON) 1b
Circuit current (ON) 2
ION1b
ION2
-
1500
350
2100
450
μA
μA
200
At burst operation
[VCC pin protection function]
VCC UVLO voltage 1
VCC UVLO voltage 2
VCC UVLO hysteresis
VCC recharge start voltage
VCC recharge stop voltage
VCC recharge hysteresis
VCC control voltage
VCC OVP voltage 1
VCC OVP voltage 2
VCC OVP hysteresis
VCC OVP timer
VUVLO1
VUVLO2
VUVLO3
VCHG1
VCHG2
VCHG3
VCNT
VOVP1
VOVP2
VOVP3
TCOMP
8.10
6.60
-
7.00
7.40
0.20
16.63
18.16
17.37
-
8.80
7.30
1.50
7.70
8.10
0.40
16.80
19.32
18.48
0.84
100
9.50
8.00
-
8.40
8.80
0.70
16.97
20.48
19.59
-
V
V
V
V
V
V
V
V
V
V
us
At VCC rising
At VCC dropping
VUVLO3= VUVLO1- VUVLO2
At VCC rising
At VCC dropping
50
150
Control IC part
At temperature rising
Control IC part
Over temperature protection 1
Over temperature protection 2
TSD1
TSD2
TSD3
120
150
85
-
-
-
C
C
C
-
-
At temperature dropping
Over temperature protection
hysteresis
65
[PWM type DC/DC driver block]
Oscillation frequency 1
Oscillation frequency 2
Frequency hopping width
Maximum duty
FB OLP ON detection timer
FB OLP OFF detection timer
Soft Start Time1
FSW1
FSW2
FDEL
Dmax
TFOLP1
TFOLP2
SS1
60
18
65
25
70
32
KHz
KHz
KHz
%
ms
ms
ms
ms
ms
-
35
40
332
2.8
5.6
11.2
4.0
40
64
512
4.0
8.0
16.0
-
45
88
692
5.2
10.4
20.8
Soft Start Time2
Soft Start Time3
SS2
SS3
[Over current detection block]
Over current detection current
Over current detection
in SS1
Over current detection
in SS2
IPEAK
1.310
-
1.460
1.095
1.610
-
A
A
IPEAK1
*1
*1
*1
IPEAK2
IPEAK3
-
-
0.730
0.365
-
-
A
A
Over current detection
in SS3
Dynamic over current detection
current
Dynamic over current detection
in SS1
Dynamic over current detection
in SS2
IDPEAK
IDPEAK1
IDPEAK2
IDPEAK3
3.600
4.015
3.011
2.008
1.004
4.430
A
A
A
A
-
-
-
-
-
-
*1
*1
*1
Dynamic over current detection
in SS3
Dynamic over current enforced
OFF time
TDPEAK
64
128
170
us
Leading Edge Blanking time
TLEB
-
-
(150)
(400)
-
-
ns
ns
*1
*1
MIN ON width
TMINON
*1 Design guarantee data
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Description of Blocks
(1)Back converter
This is the IC for exclusive use of non-isolated type back converter.
<Basic operation of back converter>
(1-1) when the MOSFET for switching is ON
When the MOSFET turns ON, current IL flows to coil L and energy is stored. At this moment, the voltage of
GND_IC becomes the voltage near DRAIN pin, and the diode D1 is OFF.
IL = (VIN-VOUT) / L * Ton
D2
5
4
3
VCC
L
GND_IC
VOUT
ON
DRAIN
2
1
6
7
Curent
IL
AC
Input
Filter
DRAIN
D1
GND
Figure 1. Back converter operation (MOSFET=ON)
(1-2) when the MOSFET for switching is OFF
When the MOSFET turns OFF, the energy stored in coil is output via diode. At the moment, the MOSFET is
OFF.
IL = (VOUT) / L * Toff
D2
5
4
3
VCC
L
GND_IC
VOUT
OFF
2
1
6
7
Curent
DRAIN
IL
AC
Input
Filter
DRAIN
D1
GND
Figure 2. Back converter operation (MOSFET=OFF)
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(2) Start sequences (start-up operation, light load operation, over load protection function)
Start sequences are shown in Figure 3. See the sections below for detailed descriptions.
DRAIN-GND
VUVLO1
VCHG2
VCHG1
VUVLO2
VCC - GND_IC
Internal 64ms
VOUT - GND
OVER
LOAD
OVER
LOAD
NORMAL
LOAD
OLP setting
LIGHT
LOAD
512ms
64ms
64ms
IOUT
BURST
MODE
SWITCHING
C
A
B
D
E
F
G
H I
Figure 3. Start sequences timing chart
A: Input voltage is applied to the DRAIN pin and the VCC pin voltage rises.
J
K
B: If the VCC pin voltage exceeds VUVLO1, the IC starts to operate. And if the IC judges the other protection functions
as normal condition, it starts switching operation. The soft start function limits the over current limiter value to
prevent any excessive voltage or current rising. When the switching operation starts, the VOUT rises.
C: Till the secondary input voltage becomes constant value from starting-up, the VCC pin voltage drops by the VCC
pin consumption current.
D: After switching starts, it is necessary that the output voltage is set to rating voltage within TFOLP (64ms typ.).
E: At light load, the IC starts burst operation to restrict the consumption power.
F: When the load exceeds a certain electric power, the IC starts over load operation.
G: If the setting over load status lasts for T FOLP (64ms typ.), switching is turned OFF.
H: When the VCC pin voltage becomes less than VCHG1, recharge operation is started.
I: When the VCC pin voltage becomes more than VCHG2, recharge operation is stopped.
J: After T OLPST (512ms typ.), the over load protection circuit starts switching.
K: Same as G
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(3) Stop sequences
Stop sequences are shown in Figure 4.
0.0V
AC VOLTAGE
DRAIN-GND
VOUT-GND
VUVLO1
VCHG2
VCHG1
VCC-GND_IC
VUVLO2
OVER
LOAD
NORMAL
LOAD
64ms
IOUT
SWITCHING
A
B
C
D E
F
Figure 4. Stop sequences timing chart
A: Normal operation
B: The input AC voltage is stopped. The DRAIN voltage starts to drop.
C: If the DRAIN voltage drops below a certain voltage, it becomes MAX duty and over load protection operates.
D: If the output voltage drops, the VCC pin voltage, too. And recharge operation is started.
E: The recharge operation is stopped.
F: If the DRAIN voltage drops below a certain voltage, the VCC pin voltage lowers below UVLO in order to stop
recharge operation.
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(4) Start circuit
This IC enables low standby electric power and high-speed startup because it has a built-in start circuit. The
consumption current after startup is only idling current IDSS (typ=10uA). The startup current flows from the DRAIN pin.
D2
VCC
VCC UVLO
5
4
3
+
-
L
GND_IC
VOUT
2
1
6
7
AC
Input
Filter
DRAIN
D1
GND
Figure 5. Start circuit
Start Up Current[A]
ISTART2
ISTART1
ISTART3
VCC[V]
VUVLO1
Vsc
Figure 6. Start up current vs. VCC voltage
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(5) VCC pin protection function
This IC has the internal protection function at the VCC pin shown in below.
1) Under voltage protection function UVLO (Under Voltage Locked Out)
2) Over voltage protection function VCC OVP (Over Voltage Protection)
3) VCC recharge function
(5-1) VCC UVLO / VCC OVP function
VCC UVLO function and VCC OVP function are auto recovery type comparators that have voltage hysteresis.
VCC OVP has an internal mask time. If the condition that the VCC pin voltage is higher than VOVP1 lasts for
TCOMP (100us typ.), it performs detection. The recovery requirements are that the VCC pin voltage is lower than
VOVP2
.
(5-2)VCC recharge function
If the VCC pin drops to VCHC1 after once the VCC pin becomes more than VUVLO1 and the IC starts to operate,
the VCC charge function operates. At that time, the VCC pin is charged from DRAIN pin through start circuit.
When the VCC pin voltage raises to VCHG2 or above, charge is stopped.
DRAIN
VOVP1
VOVP2
VCNT
100us
V
UVLO1
UVLO2
VCHG2
VCHG1
V
VCC
VOUT
ON
ON
VCC
UVLO
ON
VCC
OVP
VCC
Recharge
Function
ON
ON
SWITCHING
C
I
J
A
B
D
E
F
G
H
Figure 7. VCC UVLO / VCC OVP / VCC Recharge Function timing chart
A: Input voltage is applied to the DRAIN pin and the VCC pin voltage rises.
B: When the VCC pin voltage becomes higher than VUVLO1, the IC starts operating. And if the IC judges the
other protection functions as normal condition, it starts switching operation. The soft start function limits the
over current limiter value to prevent any excessive voltage or current rising. When the switching operation
starts, the VOUT rises.
C: When the VCC pin voltage becomes higher than VOVP1, VCC OVP timer operates.
D: When the condition that the VCC pin voltage is higher than VOVP1 lasts for TLATCH (typ=100us), the IC detects
VCC OVP and stops switching.
E: When the VCC pin voltage becomes higher than VOVP2, VCC OVP is released.
F: When the input power supply is turned OFF, the DRAIN pin voltage drops.
G: When the VCC pin voltage becomes less than VCHG1, recharge function is started.
H: When the VCC pin voltage becomes higher than VCHG2, recharge function is stopped.
I: When the VCC pin voltage becomes lower than VCHG1, recharge function is started. However the supply to the
VCC pin decrease and the VCC pin voltage drops because of low DRAIN voltage.
J: When the VCC pin voltage becomes lower than VUVLO2, VCC UVLO function starts operating.
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(6) DC/DC driver
This performs current mode PMW control. An internal oscillator sets a fixed switching frequency FSW (typ=65kHz).
This IC has a built-in switching frequency hopping function. The maximum duty is Dmax (40% typ). To achieve the low
consumption power at light load, it also has an internal burst mode circuit and a frequency reduction circuit.
(6-1) Setting of the output voltage
Adopting the non-isolated type without photo coupler, the VCC voltage should be set to rating value.
The VCC voltage means the voltage between the VCC pin and GND_IC pin. The output voltage VOUT is
defined by the formula below. The voltage when the MOSFET is OFF is shown in Figure 8.
VOUT = VCNT + VFD2 – VFD1
VFD1: Forward voltage of diode D1 VFD2: Forward voltage of diode D2
D2
[ Vcnt-VFD1 ]
5
4
3
VCC
L
GND_IC
VOUT
[ -VFD1 ]
[ Vcnt-VFD1 + VFD2]
2
1
6
7
DRAIN
DRAIN
AC
Input
Filter
D1
[ 0V ]
GND
Figure 8. Back converter circuit (At MOSFET turned OFF)
At light load, the output voltage may rise because the VCC voltage is difference from the output voltage. In this
case, it is necessary that the output pin is connected to resistor and the voltage should be lowered. The circuit
diagram is shown in Figure 9.
D2
5
4
3
VCC
L
GND_IC
VOUT
2
1
6
7
DRAIN
DRAIN
AC
Input
Filter
R1
D1
GND
Figure 9. Voltage rising measure circuit at light load
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This IC has a few external parts by fixing the VCC voltage and it enables simpler design. If you adjust the output
voltage which is out of lineup, it can become the variable voltage by adding zener diodes. However it is
necessary to consider the dispersion of the diodes.
The output voltage VOUT is defined by the formula below. The voltage when the MOSFET is OFF is shown in
Figure 10.
VOUT = VCNT + VFD2 – VFD1 + VZD1
VFD1: Forward voltage of diode D1
VFD2: Forward voltage of diode D2
VZD1: Zener diode ZD1 voltage
[ Vcnt-VFD1 +VZD1]
[ Vcnt-VFD1 ]
ZD1
D2
5
4
3
VCC
L
GND_IC
VOUT
[ -VFD1 ]
[ Vcnt-VFD1 + VFD2 +VZD1]
2
1
6
7
DRAIN
DRAIN
AC
Input
Filter
D1
[ 0V ]
GND
Figure 10. Back converter output dispersion circuit (MOSFET is OFF)
(6-2) Frequency reduction circuit
mode1: burst operation
mode2: frequency reduction operation (It reduces the frequency)
mode3: fixed frequency operation (It operates in max frequency)
mode4: over load operation (pulse operation is stopped and burst operation is started.)
Switching
Frequency
[kHz]
mode2
mode1
mode3
mode4
65kHz
25kHz
Pulse OFF
Output
Power
[W]
Figure 11. State transition of switching frequency
(6-3) Frequency hopping function
Frequency hopping function achieves low EMI by change the frequency at random. The wave width of
frequency’s upper limit is +-6% for basic frequency,
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(6-4) PWM error amplifier and PWM comparator
The internal error amplifier achieves the reduction of external parts. In addition, this IC adopts current mode
method. It makes the design easy.
(6-5) Over current limiter
This IC has an internal over current limiter per switching cycle. This function monitors the coil current and if it
exceeds a certain current, the IC stops switching. Additionally, an internal current detection resistor contributes
to reduction of parts and improvement of efficiency. The peak current by which the IC switches to the over load
mode is determined by the formula below.
Peak current = IPEAK + (VDRAIN –VOUT) / L * Tdelay
IPEAK: Over current limiter internal the IC
VDRAIN: DRAIN voltage
VOUT: Output voltage
L: Coil value
Tdelay: Delay time after detection of over current limiter
(6-6) Dynamic over current limiter
This IC has a built-in dynamic over current limiter circuit. When the coil current exceeds IDPEAK1 (4.015A typ.) in
succession twice, it stops pulse operation for TDPEAK (128us typ.).
2 Count
Currnet Limitter2 Ith
2
1
IL
Typ=128us
DC/DC ON
DC/DC
DC/DC OFF
C
A
B
Figure 12. State transition of switching frequency
A: Normal operation
B: When the condition that IL is higher than IDPEAK1 is detected in succession twice, the IC stops DC/DC
operation.
C: After TDPEAK (typ=128us), the IC restarts DC/DC operation.
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(6-7) Soft start operation
At starting up, this function controls the over current limiter value in order to prevent any excessive voltage or
current rising. The details are shown in Figure 13. The IC enables the soft start operation by changing the over
current limiter value with time.
Coil Current[A]
PEAK
I
DPEAK
I
DPEAK
I
*0.75
DPEAK
I
DPEAK *0.50
I
PEAK
I
DPEAK *0.25
I
PEAK
I
*0.75
PEAK
I
*0.50
PEAK
I
*0.25
16.0
8.0
4.0
Time [ms]
Figure 13. Soft start operation
(7) Output over load protection function (OLP comparator)
Output over protection function monitors load status and stops switching at over load. In the over load condition, the
output voltage lowers, so the IC stops switching by judging the status as over load, if a state with more than of
electric power set in the IC inside continues for TFOLP1 (64ms typ). The recovery after detection of FBOLP is TFOLP2
(512ms typ) later.
(8) Temperature protection circuit
Temperature protection circuit stops the oscillation of DC/DC if the IC becomes more than a certain temperature.
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Operation mode of protection circuits
The operation mode of protection functions are shown in Table 1.
Table 1. The operation mode of protection functions
VCC pin
Under voltage
protection
VCC pin
Over voltage
protection
Over temperature
protection
Over power
protection
Function
Detection
more than the
current detected
by over current
detection
150 °C
(at rising
temperature)
19.32V
(at rising voltage)
7.30V
(at rising voltage)
85 oC
(at falling
temperature)
18.48 V
(at falling voltage)
8.80V
(at falling voltage)
under over current
detection
Release
Detection timer
Release timer
Type
-
100us
100us
64ms
512ms
-
-
-
Auto recovery
Auto recovery
Auto recovery
Auto recovery
Timer reset
condition 1
VCC UVLO
detection
VCC UVLO
detection
VCC UVLO
detection
-
-
<Detection>
release condition
<Release>
<Detection>
release condition
<Release>
<Detection>
release condition
<Release>
Timer reset
condition 2
detection condition detection condition detection condition
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Thermal loss
The thermal design should set operation for the following conditions.
1. The ambient temperature Ta must be 105 oC or less.
2. The IC’s loss must be within the allowable dissipation Pd.
The thermal abatement characteristics are as follows.
(PCB: 70mm×70mm×1.6mm mounted on glass epoxy substrate)
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
Ta[℃]
Figure 14. Thermal Abatement Characteristics
I/O Equivalent Circuit Diagram
7
DRAIN
DRAIN
6
DRAIN
DRAIN
5
VCC
VCC
Internal
Internal
MOSFET
MOSFET
GND_IC
GND_IC
1
Non Connection
2
Non Connection
3
GND_IC
GND_IC
4
Non Connection
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Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power
supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and
aging on the capacitance value when using electrolytic capacitors.
3. Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5. Thermal Consideration
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum
rating, increase the board size and copper area to prevent exceeding the Pd rating.
6. Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may
flow instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power
supply. Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and
routing of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may
subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply
should always be turned off completely before connecting or removing it from the test setup during the inspection
process. To prevent damage from static discharge, ground the IC during assembly and use similar precautions during
transport and storage.
10. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment)
and unintentional solder bridge deposited in between pins during assembly to name a few.
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Operational Notes – continued
11. Unused Input Pins
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and
cause unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the
power supply or ground line.
12. Regarding the Input Pin of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should
be avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin B
B
E
C
Pin A
B
C
E
P
P+
P+
N
P+
P
P+
N
N
N
N
N
N
N
Parasitic
Elements
Parasitic
Elements
P Substrate
GND GND
P Substrate
GND
GND
Parasitic
Elements
Parasitic
Elements
N Region
close-by
Figure Example of monolithic IC structure
13. Ceramic Capacitor
When using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
14. Area of Safe Operation (ASO)
Operate the IC such that the output voltage, output current, and power dissipation are all within the Area of Safe
Operation (ASO).
15. Thermal Shutdown Circuit(TSD)
This IC has a built-in thermal shutdown circuit that prevents heat damage to the IC. Normal operation should always
be within the IC’s power dissipation rating. If however the rating is exceeded for a continued period, the junction
temperature (Tj) will rise which will activate the TSD circuit that will turn OFF all output pins. The IC should be
powered down and turned ON again to resume normal operation because the TSD circuit keeps the outputs at the
OFF state even if the TJ falls below the TSD threshold.
Note that the TSD circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no
circumstances, should the TSD circuit be used in a set design or for any purpose other than protecting the IC from
heat damage.
16. Over Current Protection Circuit (OCP)
This IC incorporates an integrated overcurrent protection circuit that is activated when the load is shorted. This
protection circuit is effective in preventing damage due to sudden and unexpected incidents. However, the IC should
not be used in applications characterized by continuous operation or transitioning of the protection circuit.
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Ordering Information
B M 2 P 1
6
1 W -
x
Outsourced Package
Z: DIP7K
ZA: DIP7WF
Making Diagram
DIP7K (TOP VIEW)
Part Number Marking
LOT Number
BM2P161W
DIP7WF (TOP VIEW)
Part Number Marking
LOT Number
BM2P161W
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Physical Dimension and Packing Information
Package Name
DIP7K
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Physical Dimension and Packing Information
Package Name
DIP7WF
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Revision History
date
Rev. NO.
Revision Point
11.Jul.2016
19.Oct.2016
001
002
New release
P3. Start Current1 limit change
P4. Over current detection current limit change
P4. Dynamic over current detection current limit change
P12. Modify Dynamic over current limiter
P1. Modify the figure and size of package
P4. Add parameters to electrical characteristics
P18. Modify the marking diagram
22.Mar.2019
003
P19. Modify the packing information
Delete the product number (BM2P163W-Z)
P1 Add the package variation
P18 Add the package variation
30.July.2019
26.Oct.2021
004
005
P20 Add the physical dimension
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Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipment (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.) ; or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PGA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PGA-E
Rev.004
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Daattaasshheeeett
General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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