BR25H040F-WCE2 [ROHM]

EEPROM, 512X8, Serial, CMOS, PDSO8, SOP-8;
BR25H040F-WCE2
型号: BR25H040F-WCE2
厂家: ROHM    ROHM
描述:

EEPROM, 512X8, Serial, CMOS, PDSO8, SOP-8

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 时钟 光电二极管 内存集成电路
文件: 总32页 (文件大小:1026K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Datasheet  
Automotive Series Serial EEPROMs  
125°C SPI BUS ICs BR25xxxxFamily  
BR25Hxxx-WC Series  
(1K 2K 4K 8K 16K 32K)  
Description  
BR25Hxxx-WC series is a serial EEPROM of SPI BUS interface method.  
Features  
Packages W(Typ) x D(Typ) x H(Max)  
„ High Speed Clock Action Up to 5MHz (Max)  
„ Wait Function by HOLDB Terminal.  
„ Part or Whole of Memory Arrays Settable as Read  
Only Memory Area by Program.  
„ 2.5 to 5.5V single power source action most suitable  
for battery use.  
„ Page Write Mode Useful for Initial Value Write at  
Factory Shipment.  
„ Highly Reliable Connection by Au Pad and Au Wire.  
„ For SPI Bus Interface (CPOL, CPHA)=(0, 0), (1, 1)  
„ Auto Erase and Auto End Function at Data Rewrite.  
„ Low Current Consumption  
SOP8  
5.00mm x 6.20mm x 1.71mm  
¾
¾
¾
At Write Action (5V)  
At Read Action (5V)  
At Standby Action (5V) : 0.1µA (Typ)  
: 1.5mA (Typ)  
: 1.0mA (Typ)  
„ Address Auto Increment Function at Read Action  
„ Write Mistake Prevention Function  
SOP-J8  
4.90mm x 6.00mm x 1.65mm  
¾
¾
¾
¾
Write Prohibition at Power on.  
Write Prohibition by Command Code (WRDI).  
Write Prohibition by WPB Pin.  
Write Prohibition Block Setting by Status  
Registers (BP1, BP0)  
¾
Write Mistake Prevention Function at Low  
Voltage.  
TSSOP-B8  
3.00mm x 6.40mm x 1.20mm  
„ Data at Shipment Memory Array: FFh, Status  
Register WPEN, BP1, BP0 : 0  
„ Data Kept for 40 Years.  
„ Data Rewrite Up to 1,000,000 Times.  
„ AEC-Q100 Qualified  
Page Write  
Number of pages  
16 Byte  
32 Byte  
BR25H010-WC  
BR25H020-WC  
BR25H040-WC  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
Product Number  
BR25Hxxx-WC Series  
Capacity  
Bit Format  
Type  
Power Source Voltage  
2.5 to 5.5V  
SOP8  
SOP-J8  
TSSOP-B8  
1Kbit  
128×8  
256×8  
512×8  
1K×8  
2K×8  
4Kx8  
BR25H010-WC  
2Kbit  
BR25H020-WC  
BR25H040-WC  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
2.5 to 5.5V  
4Kbit  
2.5 to 5.5V  
8Kbit  
2.5 to 5.5V  
16Kbit  
32Kbit  
2.5 to 5.5V  
2.5 to 5.5V  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
V
Remarks  
Impressed Voltage  
VCC  
-0.3 to +6.5  
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C  
When using at Ta=25°C or higher, 4.5mW to be reduced per 1°C  
When using at Ta=25°C or higher, 3.3mW to be reduced per 1°C  
0.56 (SOP8)  
0.56 (SOP-J8)  
0.41 (TSSOP-B8)  
-65 to +150  
Permissible  
Dissipation  
Pd  
W
Storage Temperature Range  
Tstg  
Topr  
-
°C  
°C  
V
Operating Temperature  
Range  
-40 to +125  
Terminal Voltage  
-0.3 to VCC+0.3  
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit  
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over  
the absolute maximum ratings.  
Memory Cell Characteristics (VCC=2.5V to 5.5V)  
Limits  
Parameter  
Unit  
Condition  
Ta85°C  
Min  
1,000,000  
500,000  
300,000  
40  
Typ  
Max  
-
-
-
-
-
-
-
-
-
-
Times  
Times  
Times  
Years  
Years  
Number of Data Rewrite Times (Note1)  
Ta105°C  
Ta125°C  
Ta25°C  
Data Hold Years (Note1)  
20  
Ta125°C  
(Note1) Not 100% TESTED  
Recommended Operating Ratings  
Parameter  
Power Source Voltage  
Input Voltage  
Symbol  
Limits  
Unit  
V
VCC  
VIN  
2.5 to 5.5  
0 to VCC  
Input / Output Capacity (Ta=25°C, Frequency=5MHz)  
Parameter  
Input Capacity (Note1)  
Output Capacity (Note1)  
Symbol  
Min  
Max  
8
Unit  
pF  
Conditions  
CIN  
-
-
VIN=GND  
COUT  
8
VOUT=GND  
(Note1) Not 100% TESTED  
Electrical Characteristics (Unless otherwise specified, Ta=-40°C to +125°C, VCC=2.5V to 5.5V)  
Limits  
Parameter  
Symbol  
Unit  
Conditions  
Min  
0.7xVCC  
-0.3  
Typ  
Max  
VCC+0.3  
0.3xVCC  
0.4  
2.5VVCC5.5V  
2.5VVCC5.5V  
IOL=2.1mA  
“H” Input Voltage  
VIH  
VIL  
VOL  
VOH  
ILI  
-
-
-
-
-
-
V
V
“L” Input Voltage  
“L” Output Voltage  
“H” Output Voltage  
Input Leak Current  
Output Leak Current  
0
V
IOH=-0.4mA  
VCC-0.5  
-10  
VCC  
V
VIN=0 to VCC  
10  
µA  
µA  
VOUT=0 to VCC, CSB=VCC  
ILO  
-10  
10  
VCC=2.5V, fSCK=5MHz, tE/W=5ms  
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN  
Byte write, Page write, Write status register  
VCC=5.5V, fSCK=5MHz, tE/W=5ms  
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN  
Byte write, Page write, Write status register  
VCC=2.5V, fSCK=5MHz  
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN  
Read, Read status register  
VCC=5.5V, fSCK=5MHz  
VIH/VIL=0.9VCC/0.1VCC, SO=OPEN  
Read, Read status register  
VCC=5.5V  
CSB=HOLDB=WPB=VCC, SCK=SI=VCC or =GND,  
SO=OPEN  
ICC1  
ICC2  
ICC3  
ICC4  
ISB  
-
-
-
-
-
-
-
-
-
-
2.0  
3.0  
1.5  
2.0  
10  
mA  
mA  
mA  
mA  
µA  
Current Consumption at Write  
Action  
Current Consumption at Read  
Action  
Standby Current  
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Operating Timing Characteristics  
(Ta=-40°C to +125°C, unless otherwise specified, load capacity CL1=100pF)  
2.5VCC5.5V  
Parameter  
Symbol  
Unit  
Min  
-
Typ  
-
Max  
SCK Frequency  
SCK High Time  
SCK Low Time  
CSB High Time  
CSB Setup Time  
CSB Hold Time  
SCK Setup Time  
SCK Hold Time  
SI Setup Time  
SI Hold Time  
fSCK  
tSCKWH  
tSCKWL  
tCS  
5
MHz  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
ns  
ns  
ms  
85  
85  
85  
90  
85  
90  
90  
20  
30  
-
-
-
-
-
-
-
-
tCSS  
tCSH  
tSCKS  
tSCKH  
tDIS  
-
-
-
-
-
-
-
-
-
tDIH  
-
-
Data Output Delay Time1  
Data Output Delay Time2 (CL2=30pF)  
Output Hold Time  
tPD1  
tPD2  
tOH  
-
70  
55  
-
-
-
0
-
Output Disable Time  
tOZ  
-
-
100  
-
HOLDB Setting Setup Time  
HOLDB Setting Hold Time  
HOLDB Release Setup Time  
HOLDB Release Old Time  
Time from HOLDB to Output High-Z  
Time from HOLDB To Output Change  
SCK Rise Time (Note1)  
tHFS  
tHFH  
tHRS  
tHRH  
tHOZ  
tHPD  
tRC  
0
-
40  
0
-
-
-
-
70  
-
-
-
-
100  
70  
1
-
-
-
-
SCK Fall Time (Note1)  
tFC  
-
-
1
OUTPUT Rise Time (Note1)  
OUTPUT Fall Time (Note1)  
tRO  
-
-
50  
50  
5
tFO  
-
-
Write Time  
tE/W  
-
-
(Note1) NOT 100% TESTED  
Sync Data Input / Output Timing  
tCSS  
tCS  
tCS  
CSB  
SCK  
tSCKH  
CSB  
tSCKS  
tCSH  
tRC  
tFC  
tSCKWH  
tSCKWL  
tDIS  
SCK  
SI  
tDIH  
tPD  
tOH  
SI  
tRO,tFO  
tOZ  
High-Z  
SO  
High-Z  
SO  
Figure 1. Input Timing  
Figure 2. Input / Output Timing  
SI is taken into IC inside in sync with data rise  
edge of SCK. Input address and data from the  
most significant bit MSB.  
SO is output in sync with data fall edge of SCK.  
Data is output from the most significant bit MSB.  
AC Measurement Conditions  
CSB "H"  
"L"  
Limits  
Parameter  
Symbol  
Unit  
tHFS tHFH  
tHRS tHRH  
Min  
Typ  
Max  
100  
30  
SCK  
SI  
tDIS  
Load Capacity 1  
Load Capacity 2  
Input Rise Time  
Input Fall Time  
Input Voltage  
CL1  
-
-
-
-
-
-
-
-
pF  
pF  
ns  
ns  
V
n
n+1  
n-1  
CL2  
tHOZ  
Dn  
tHPD  
High-Z  
SO  
Dn+1  
Dn  
Dn-1  
-
-
-
50  
50  
HOLDB  
0.2VCC/0.8VCC  
0.3VCC/0.7VCC  
Figure 3. HOLD timing  
Input / Output  
Judgment Voltage  
-
V
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Block Diagram  
VOLTAGE  
DETECTION  
CSB  
SCK  
INSTRUCTION DECODE  
CONTROL CLOCK  
GENERATION  
(Note1) 7bit: BR25H010-WC  
8bit: BR25H020-WC  
HIGH VOLTAGE  
GENERATOR  
WRITE  
INHIBITION  
9bit: BR25H040-WC  
10bit: BR25H080-WC  
11bit: BR25H160-WC  
12bit: BR25H320-WC  
SI  
INSTRUCTION  
REGISTER  
STATUS REGISTER  
(Note1)  
(Note1)  
ADDRESS  
HOLDB  
ADDRESS  
712bit  
712bit  
REGISTER  
DECODER  
132K  
EEPROM  
DATA  
READ/WRITE  
AMP  
WPB  
SO  
8bit  
8bit  
REGISTER  
Figure 4. Block diagram  
HOLDB SCK  
Pin Configuration  
Vcc  
SI  
BR25H010-WC  
BR25H020-WC  
BR25H040-WC  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
CSB  
SO  
WPB  
GND  
Figure 5. Pin Configuration  
Pin Description  
Terminal name  
Input/Output  
Function  
Power source to be connected  
VCC  
GND  
CSB  
SCK  
SI  
-
-
All input / output reference voltage, 0V  
Chip select input  
Input  
Input  
Input  
Output  
Serial clock input  
Start bit, ope code, address, and serial data input  
SO  
Serial data output  
Hold input  
HOLDB  
WPB  
Input  
Input  
Command communications may be suspended temporarily (HOLD  
status)  
Write protect input  
Write command is prohibited (Note1)  
Write status register command is prohibited.  
(Note1) BR25H010/020/040-WC  
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© 2012 ROHM Co., Ltd. All rights reserved.  
TSZ2211115001  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
4/29  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Typical Performance Curves  
Figure 6. “H” Input Voltage vs Supply Voltage  
Figure 7. “L” Input Voltage vs Supply Voltage  
Figure 8. “L” Output Voltage vs Output Current (Vcc=2.5V)  
Figure 9. "H" Output Voltage vs Output Current (Vcc=2.5V)  
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TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Typical Performance Curves - continued  
Figure 10. Input Leak Current vs Supply Voltage  
Figure 11. Output Leak Current vs Output Voltage (Vcc=5.5V)  
Figure 13. Consumption Current at READ Operation  
vs Supply Voltage  
Figure 12. Current Consumption at WRITE Operation  
vs Supply Voltage  
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TSZ2211115001  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Typical Performance Curves - continued  
Figure 15. SCK Frequency vs Supply Voltage  
Figure 14. Standby Current vs Supply Voltage  
Figure 17. SCK Low Time vs Supply Voltage  
Figure 16. SCK High Time vs Supply Voltage  
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TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
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TSZ2211115001  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Typical Performance Curves - continued  
Figure 19. CSB Setup Time vs Supply Voltage  
Figure 18. CSB High Time vs Supply Voltage  
Figure 21. SI Setup Time vs Supply Voltage  
Figure 20. CSB Hold Time vs Supply Voltage  
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Typical Performance Curves - continued  
Figure 23. Data Output Delay Time vs Supply Voltage  
(CL1=100pF)  
Figure 22. SI Hold Time vs Supply Voltage  
Figure 24. Data Output Delay Time vs Supply Voltage  
(CL2=30pF)  
Figure 25. Output Disable Time vs Supply Voltage  
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TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
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TSZ2211115001  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Typical Performance Curves - continued  
Figure 27. HOLDB Release Hold Time vs Supply Voltage  
Figure 26. HOLDB Setting Hold Time vs Supply Voltage  
Figure 29. Time from HOLDB to Output Change  
vs Supply Voltage  
Figure 28. Time from HOLDB to Output High-Z  
vs Supply Voltage  
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31.Oct.2013 Rev.002  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Typical Performance Curves - continued  
Figure 31. Output Fall Time vs Supply Voltage  
Figure 30. Output Rise Time vs Supply Voltage  
Figure 32. Write Cycle Time vs Supply Voltage  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Features  
1. Status Registers  
This IC has status registers. The status registers are of 8 bits and express the following parameters.  
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore  
are valid even when power source is turned off.  
Rewrite characteristics and data hold time are same as characteristics of the EEPROM.  
WEN can be set by write enable command and write disable command. WEN becomes write disable status when  
power source is turned off. R/B is for write confirmation, therefore cannot be set externally.  
The value of status register can be read by read status command.  
Status Registers  
Product number  
bit 7  
1
bit 6  
1
bit 5  
1
bit 4  
1
bit 3  
BP1  
bit 2  
BP0  
bit 1  
bit 0  
BR25H010-WC  
BR25H020-WC  
BR25H040-WC  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
WEN  
R/B  
WPEN  
0
0
0
BP1  
BP0  
WEN  
R/B  
Memory  
location  
bit  
Function  
Contents  
WPB pin enable / disable designation bit  
WPEN=0=invalid  
This enables / disables the functions  
of WPB pin.  
WPEN  
EEPROM  
EEPROM  
WPEN=1=valid  
This designates the write disable  
area of EEPROM. Write  
designation areas of product  
numbers are shown below.  
BP1  
BP0  
EEPROM write disable block designation bit  
Write and write status register write enable  
This confirms prohibited status or  
permitted status of the write and  
the write status register.  
/ disable status confirmation bit  
WEN  
Register  
Register  
WEN=0=prohibited  
WEN=1=permitted  
Write cycle status (READY / BUSY) status confirmation bit  
――  
This confirms READY status or  
BUSY status of the write cycle.  
R/B=0=READY  
R/B  
――  
R/B=1=BUSY  
Write Disable Block Setting  
BP  
1
Write disable block  
BP0  
BR25H010-WC BR25H020-WC BR25H040-WC BR25H080-WC  
BR25H160-WC BR25H320-WC  
0
0
1
0
1
None  
None  
None  
None  
None  
None  
0
1
1
60h-7Fh  
40h-7Fh  
00h-7Fh  
C0h-FFh  
80h-FFh  
00h-FFh  
180h-1FFh  
100h-1FFh  
000h-1FFh  
300h-3FFh  
200h-3FFh  
000h-3FFh  
600h-7FFh  
400h-7FFh  
000h-7FFh  
C00h-FFFh  
800h-FFFh  
000h-FFFh  
1. WPB Pin  
By setting WPB=LOW, write command is prohibited. As for BR25H080/160/320-WC, only when WPEN bit is set “1”, the  
WPB pin functions become valid. And the write command to be disabled at this moment is WRSR. As for BR25H010/  
020/040-WC, both WRITE and WRSR commands are prohibited.  
However, when write cycle is in execution, no interruption can be made.  
Product number  
BR25H010-WC  
BR25H020-WC  
BR25H040-WC  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
WRSR  
WRITE  
Prohibition  
possible  
Prohibition  
possible  
Prohibition possible  
but WPEN bit “1”  
Prohibition  
impossible  
2. HOLDB Pin  
By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to  
EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted.  
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TSZ02201-0R1R0G100060-1-2  
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TSZ2211115001  
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BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Command Mode  
Ope Code  
BR25H080-WC  
BR25H040-WC BR25H160-WC  
BR25H320-WC  
Command  
Contents  
BR25H010-WC  
BR25H020-WC  
WREN Write Enable  
WRDI Write Disable  
READ Read  
Write Enable Command  
Write Disable Command  
Read Command  
0000  
0000  
0000  
0000  
0000  
0000  
*110  
*100  
*011  
*010  
*101  
*001  
0000  
0000  
0000  
0000  
0000  
0000  
*110  
*100  
0000  
0000  
0000  
0000  
0000  
0000  
0110  
0100  
0011  
0010  
0101  
0001  
A8011  
A8010  
*101  
WRITE Write  
Write Command  
RDSR Read Status Register Status Register Read Command  
WRSR Write Status Register Status Register Write Command  
*001  
*=Don’t Care Bit.  
Timing Chart  
1. Write Enable (WREN) / Disable (WRDI) Cycle  
WREN (WRITE ENABLE): Write Enable  
CSB  
SCK  
SI  
0
1
2
3
4
5
6
7
0
0
0
0
*
1
1
0
High-Z  
SO  
* BR25H010/020/040-WC= Don’t care  
BR25H080/160/320-WC= “0” input  
Figure 33. Write Enable Command  
WRDI (WRITE DISABLE): Write Disable  
CSB  
SCK  
SI  
0
1
2
3
4
5
6
7
0
0
0
0
1  
*
1
0
0
High-Z  
SO  
* BR25H010/020/040-WC= Don’t care  
BR25H080/160/320-WC= “0” input  
Figure 34. Write Disable  
This IC has write enable status and write disable status. It is set to write enable status by write enable command, and  
it is set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the  
respective ope codes. The respective commands accept command at the 7-th clock rise. Even with input over 7 clocks,  
command becomes valid.  
When to carry out write and write status register command, it is necessary to set write enable status by the write  
enable command. If write or write status register command is input in the write disable status, commands are cancelled.  
And even in the write enable status, once write and write status register command is executed, it gets in the write  
disable status. After power on, this IC is in write disable status.  
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TSZ02201-0R1R0G100060-1-2  
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2. Read Command (READ)  
CSB  
~~  
~  
~  
Product  
number  
BR25H010-WC  
BR25H020-WC  
BR25H040-WC  
Address  
length  
A6-A0  
A7-A0  
A8-A0  
~  
0
1
2
3
4
5
6
7
8
9
10  
11  
15  
16  
22  
SCK  
SI  
~  
~  
0
0
0
0
0
1
1
A7 A6 A5  
A4  
A1 A0  
~  
~  
~  
High-Z  
SO  
D7 D6  
D2 D1 D0  
* BR25H010/020-WC=Don’t care  
BR25H040-WC=A8  
Figure 35. Read Command  
(BR25H010/020/040-WC)  
CSB  
SCK  
~  
~  
Product  
number  
Address  
length  
~  
~  
0
1
2
3
4
5
6
7
8
12  
23  
24  
30  
~  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
A9-A0  
A10-A0  
A11-A0  
~  
~  
0
0
0
0
0
0
1
1
A11  
A1 A0  
~  
SI  
~  
~  
~  
~  
~  
High-Z  
D7 D6  
D2 D1 D0  
SO  
*=Don’t Care  
Figure 36. Read Command (BR25H080/160/320-WC)  
By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input address after read  
ope code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15/23(Note1)  
clock, and from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by  
continuing input of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM.  
After reading data of the most significant address, by continuing increment read, data of the most insignificant address  
is read.  
(Note1) BR25H010/020/040-WC=15 clocks  
BR25H080/160/320-WC=23 clocks  
3. Write Command (WRITE)  
CSB  
Product  
number  
BR25H010-WC  
BR25H020-WC  
BR25H040-WC  
Address  
length  
A6-A0  
A7-A0  
A8-A0  
~~  
~~  
0
1
2
3
4
5
6
7
8
15  
16  
22  
23  
SCK  
~  
~  
~  
0
0
0
0
0
1
0
A7  
A6  
A5  
A4  
A1  
A0  
D7 D6  
D2  
~~  
D1 D0  
SI  
~  
~  
High-Z  
SO  
* BR25H010/020-WC=Don’t care  
BR25H040-WC=A8  
Figure 37. Write Command (BR25H010/020/040-WC)  
CSB  
SCK  
~  
~  
~  
~  
Product  
number  
BR25H080-WC  
BR25H160-WC  
BR25H320-WC  
Address  
length  
A9-A0  
A10-A0  
A11-A0  
~  
0
1
2
3
4
5
6
7
8
12  
23  
24  
30  
31  
~  
~  
~  
~  
0
0
0
0
0
0
1
0
A11  
A1  
A0  
D7 D6  
D2  
~  
D1  
D0  
SI  
~  
High-Z  
~  
~  
SO  
=Don't Care  
*
Figure 38. Write Command  
(BR25H080/160/320-WC)  
By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data  
after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires  
time of tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CSB after taking the last  
data (D0), and before the next SCK clock starts. At other timing, write command is not executed, and this write  
command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data  
input without starting CSB, data up to 16/32(Note1)bytes can be written for one tE/W. In page write, the insignificant  
4/5(Note2) bit of the designated address is incremented internally at every time when data of 1 byte is input and data is  
written to respective addresses. When data of the maximum bytes or higher is input, address rolls over, and previously  
input data is overwritten.  
(Note1) BR25H010/020/040-WC=16 bytes at maximum  
BR25H080/160/320-WC=32 bytes at maximum  
(Note2) BR25H010/020/040-WC=Insignificant 4 bits  
BR25H080/160/320-WC=Insignificant 5 bits  
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4. Status Register Write / Read Command  
CSB  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
SCK  
bit7  
bit6  
bit5  
bit4  
bit3  
bit2  
bit1  
bit0  
0
0
0
0
0
0
1
BP1 BP0  
SI  
High-Z  
SO  
=Don't care  
Figure 39. Status Register Write Command (BR25H010/020/040-WC)  
CSB  
SCK  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
bit7  
WPEN  
bit6  
bit5  
bit4  
bit3  
bit2  
bit1  
bit0  
0
0
0
0
0
0
0
1
BP1 BP0  
SI  
High-Z  
SO  
=Don't care  
Figure 40. Status Register Write Command (BR25H080/160/320-WC)  
Write status register command can write status register data. The data can be written by this command are 2 bits (Note1)  
,
that is, BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of EEPROM can  
be set. As for this command, set CSB LOW, and input ope code of write status register, and input data. Then, by  
making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as write. As for CSB rise, start  
CSB after taking the last data bit (bit0), and before the next SCK clock starts. At other timing, command is cancelled.  
Write disable block is determined by BP1 and BP0, and the block can be selected from 1/4 of memory array, 1/2, and  
entire memory array. (Refer to the write disable block setting table.)  
To the write disabled block, write cannot be made, and only read can be made.  
(Note1) 3bits including BR25H080/160/320-WC WPEN (bit7)  
CSB  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
SCK  
SI  
0
0
0
0
1
0
1
bit7  
bit6  
bit5  
bit4  
bit3  
bit2  
bit1  
WEN  
bit0  
R/B  
High-Z  
1
1
1
BP1 BP0  
SO  
1
=Don’t care  
Figure 41. Status Register Read Command (BR25H010/020/040-WC)  
CSB  
SCK  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
0
0
0
0
1
0
1
SI  
0
bit7  
WPEN  
bit6  
bit5  
bit4  
bit3  
bit2  
bit1  
WEN  
bit0  
R/B  
High-Z  
0
0
0
BP1 BP0  
SO  
Figure 42. Status Register Read Command (BR25H080/160/320-WC)  
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At Standby  
1. Current at Standby  
Set CSB “H”, and be sure to set SCK, SI, WPB, HOLDB input “L” or “H”. Do not input intermediate electric potantial.  
2. Timing  
As shown in Figure 43., at standby, when SCK is “H”, even if CSB is fallen, SI status is not read at fall edge. SI status is  
read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status.  
Even if CSB is fallen at SCK=SI=”H”,  
SI status is not read at that edge.  
CSB  
Command start here. SI is read.  
SCK  
SI  
0
1
2
Figure 43. Operating Timing  
WPB Cancel Valid Area  
WPB is normally fixed to “H” or “L” for use, but when WPB is controlled so as to cancel write status register command and  
write command, pay attention to the following WPB valid timing.  
While write or write status register command is executed, by setting WPB = “L” in cancel valid area, command can be  
cancelled. The area from command ope code before CSB rise at internal automatic write start becomes the cancel valid  
area. However, once write is started, any input cannot be cancelled. WPB input becomes Don’t Care, and cancellation becomes  
invalid.  
SCK  
6
7
15  
16  
tE/W  
Ope Code  
Data  
Data write time  
Valid  
(WEN is reset by WPB=L)  
(BR25H010/020/040-WC)  
(BR25H080/160/320-WC)  
Invalid  
Invalid  
Invalid  
Valid  
Figure 44. WPB Valid Timing (WRSR)  
(Note2)  
(Note1)  
24/32  
SCK  
6
7
8
15/23  
tE/W  
Data  
Ope Code  
Address  
Va lid  
Data write time  
(BR25H010/020/040-WC)  
(BR25H080/160/320-WC)  
Invalid  
Invalid  
(WEN is reset by WPB=L)  
Invalid  
Invalid  
Invalid  
(Note1) BR25H010/020/040-WC = 15  
BR25H080/160/320-WC = 23  
(Note2) BR25H010/020/040-WC = 24  
BR25H080/160/320-WC = 32  
Figure 45. WPB Valid Timing (WRITE)  
HOLDB Pin  
By HOLDB pin, command communication can be stopped temporarily (HOLD status). The HOLDB pin carries out command  
communications normally when it is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the  
HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high impedance (High-Z). To release  
the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point  
before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD  
status, by starting A4 address input, read can be restarted. When in HOLD status, leave CSB LOW. When it is set  
CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.  
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Method to Cancel Each Command  
1. READ, RDSR  
Method to cancel : cancel by CSB = “H”  
Data  
Ope code  
8 bits  
Ope code  
8 bits  
Address  
Data  
8 bits  
8 bits/16bits  
8 bits  
Cancel available in all  
areas of rdsr mode  
Cancel available in all areas of read mode  
Figure .46 READ Cancel Valid Timing  
Figure .47 RDSR Cancel Valid Timing  
2. WRITE, PAGE WRITE  
aOpe code, address input area.  
Address  
Data  
tE/W  
Ope code  
8bits  
Cancellation is available by CSB=”H”  
bData input area (D7 to D1 input area)  
Cancellation is available by CSB=”H”  
8bits/16bits  
8bits  
b
a
d
cData input area (D0 area)  
c
When CSB is started, write starts.  
After CSB rise, cancellation cannot be made by any means.  
dtE/W area.  
SCK  
SI  
Cancellation is available by CSB = “H”. However, when  
write starts (CSB is started) in the area c, cancellation  
cannot be made by any means. And by inputting on  
SCK clock, cancellation cannot be made. In page write  
mode, there is write enable area at every 8 clocks.  
D7 D6 D5 D4 D3 D2 D1 D0  
c
b
Figure 48. WRITE Cancel Valid Timing  
Note 1) If VCC is made OFF during write execution, designated address data is not guaranteed, therefore write it once again  
Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,  
therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.  
3. WRSR  
14 15  
16  
17  
aFrom ope code to 15 rise.  
SCK  
SI  
Cancel by CSB =”H”.  
bFrom 15 clock rise to 16 clock rise (write enable area).  
When CSB is started, write starts.  
D1  
a
D0  
b
c
After CSB rise, cancellation cannot be made by any means.  
cAfter 16 clock rise.  
tE/W  
Ope code  
8 bits  
Data  
8 bits  
Cancel by CSB=”H”. However, when write starts (CSB is started)  
in the area b, cancellation cannot be made by any means.  
And, by inputting on SCK clock, cancellation cannot be made.  
a
c
b
Figure 49. WRSR Cancel Valid Timing  
Note 1) If VCC is made OFF during write execution, designated address data is not guaranteed, therefore write it once again  
Note 2) If CSB is started at the same timing as that of the SCK rise, write execution / cancel becomes unstable,  
therefore, it is recommended to fall in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or higher.  
4. WREN, WRDI  
aFrom ope code to 7-th clock rise, cancel by CSB = “H”.  
7
8
9
SCK  
bCancellation is not available when CSB is started after 7-th clock.  
Ope code  
8 bits  
a
b
Figure 50. WREN/WRDI Cancel Valid Timing  
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High Speed Operation  
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.  
1. Input Pin pull up, pull down Resistance  
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller  
VOL, IOL from VIL characteristics of this IC.  
2. Pull up Resistance  
VCC -VOLM  
・・・①  
RPU ≥  
IOLM  
・・・②  
V
OLM VILE  
Microcontroller  
VOLM  
“L” output  
IOLM  
EEPROM  
VILE  
RPU  
Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA,  
from the equation ,  
“L” input  
5 -0.4  
RPU ≥  
-3  
VILE :EEPROM VIL specifications  
VOLM :Microcontroller VOL specifications  
IOLM :Microcontroller IOL specifications  
2×10  
RPU 2.3 ꢁ kΩ ꢀ  
With the value of RPU to satisfy the above equation, VOLM  
becomes 0.4V or lower, and with VILE (=1.5V), the equation is  
also satisfied.  
Figure 51. Pull up Resistance  
And, in order to prevent malfunction, mistake write at power ON/OFF, be sure to make CSB pull up.  
3. Pull down Resistance  
VOHM  
RPD ≥  
・・・③  
IOHM  
Microcontroller  
VOHM  
EEPROM  
VIHE  
・・・④  
VOHM VIHE  
RPD  
“H” output  
“H” input  
Example) When VCC=5V, VOHM=VCC-0.5V, IOHM0.4mA,  
IOHM  
V
IHE=VCC×0.7V, from the equation,  
5 -0.5  
RPD ≥  
-3  
Figure 52. Pull down Resistance  
0.4×10  
RPU 11.3 ꢁ kΩ ꢀ  
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting signal of amplitude  
of VCC / GND level to input, more stable high speed operations can be realized. On the contrary, when amplitude of  
0.8VCC / 0.2VCC is input, operation speed becomes slow. (Note1)  
In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as  
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.  
(Note1) At this moment, operating timing guaranteed value is guaranteed.  
tPD_VIL characteristics  
80  
Spec  
70  
60  
50  
40  
30  
Vcc=2.5V  
20  
Ta=25  
VIH=Vcc  
10  
0
CL=100pF  
0
0.2  
0.4  
0.6  
0.8  
1
VIL[V]  
Figure 53. Data Output Delay Time vs “L” Input Voltage  
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4. SO Road Capacity Condition  
Load capacity of SO output pin affects upon delay characteristic of SO output. (Data output delay time, time from  
HOLDB to High-Z) In order to make output delay characteristic into higher speed, make SO load capacity small. In  
concrete, “Do not connect many devices to SO bus”, “Make the wire between the controller and EEPROM short”, and  
so forth.  
tPD-CL characteristics  
80  
Spec  
Vcc=2.5V Ta=25  
70  
60  
50  
40  
30  
20  
VIH/VIL=0.8Vcc/0.2Vcc  
EEPROM  
SO  
Spec  
CL  
0
20  
40  
60  
80  
100  
120  
CL[pF]  
Figure 54. Data Output Delay Time vs SO Load  
5. Other Cautions  
Make the wire length from the microcontroller to EEPROM input signal same length, in order to prevent setup / hold  
violation to EEPROM, owing to difference of wire length of each input.  
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Input / Output Circuit  
1. Output Circuit  
SO  
OEint.  
Figure 55. SO Output Equivalent Circuit  
2. Input Circuit  
RESETint.  
CSB  
Figure 56. CSB Input Equivalent Circuit  
SCK  
SI  
Figure 57. SCK Input Equivalent Circuit  
Figure 58. SI Input Equivalent Circuit  
HOLDB  
WPB  
Figure 59. HOLDB Input Equivalent Circuit  
Figure 60. WPB Input Equivalent Circuit  
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Notes on Power ON/OFF  
1. At Power ON/OFF, Set CSB “H” (=VCC).  
When CSB is “L”, this IC gets in input accept status (active). If power is turned on in this status, noises and the likes  
may cause malfunction, mistake write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status,  
all inputs are canceled.)  
(Good example) CSB terminal is pulled up to VCC.  
At power OFF, take 10ms or higher before supply. If power is turned on without observing this condition, the IC  
internal circuit may not be reset, which please note.  
(Bad example)  
CSB terminal is “L” at power ON/OFF.  
In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction, mistake write owing to  
noises and the likes.  
Even when CSB input is High-Z, the status becomes like this case, which please note.  
2. LVCC Circuit  
LVCC (VCC-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.  
At LVCC voltage (Typ =1.9V) or below, it prevent data rewrite.  
3. P.O.R. Circuit  
This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disable  
status. The POR circuit is valid only when power is ON, and does not work when power is OFF. When power is ON, if  
the recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status  
owing to noises and the likes.  
Recommended conditions of tR, tOFF, Vbot  
tR  
tOFF  
Vbot  
10ms or below  
100ms or below  
10ms or higher  
10ms or higher  
0.3V or below  
0.2V or below  
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Noise Countermeasures  
1. VCC Noise (bypass capacitor)  
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is  
recommended to attach a bypass capacitor (0.1µF) between IC VCC and GND. At that moment, attach it as close to IC  
as possible. And, it is also recommended to attach a bypass capacitor between board VCC and GND.  
2. SCK Noise  
When the rise time (tR) of SCK is long, and a certain degree or more of noise exists, malfunction may occur owing to  
clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysterisis width of this circuit is  
set about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or below. And it is recommended to set the  
rise time (tR) of SCK 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise  
countermeasures. Make the clock rise, fall time as small as possible.  
3. WPB Noise  
During execution of write status register command, if there exist noises on WPB pin, mistake in recognition may occur  
and forcible cancellation may result, which please note. To avoid this, a Schmitt trigger circuit is built in WPB input. In  
the same manner, a Schmitt trigger circuit is built in CSB input, SI input and HOLDB input too.  
Operational Notes  
1. Reverse Connection of Power Supply  
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when  
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply  
pins.  
2. Power Supply Lines  
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the  
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog  
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and  
aging on the capacitance value when using electrolytic capacitors.  
3. Ground Voltage  
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.  
4. Ground Wiring Pattern  
When using both small-signal and large-current ground traces, the two ground traces should be routed separately but  
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal  
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations  
on the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.  
5. Thermal Consideration  
Should by any chance the power dissipation rating be exceeded the rise in temperature of the chip may result in  
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when  
the IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,  
increase the board size and copper area to prevent exceeding the Pd rating.  
6. Recommended Operating Conditions  
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.  
The electrical characteristics are guaranteed under the conditions of each parameter.  
7. Inrush Current  
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush  
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC  
has more than one power supply. Therefore, give special consideration to power coupling capacitance,  
power wiring, width of ground wiring, and routing of connections.  
8. Operation Under Strong Electromagnetic Field  
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.  
9. Testing on Application Boards  
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject  
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should  
always be turned off completely before connecting or removing it from the test setup during the inspection process. To  
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and  
storage.  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
22/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Operational Notes – continued  
10. Unused Input Pins  
Input pins of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance and  
extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small charge  
acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause  
unexpected operation of the IC. So unless otherwise specified, unused input pins should be connected to the power  
supply or ground line.  
11. Regarding the Input Pin of the IC  
In the construction of this IC, P-N junctions are inevitably formed creating parasitic diodes or transistors. The operation  
of these parasitic elements can result in mutual interference among circuits, operational faults, or physical damage.  
Therefore, conditions which cause these parasitic elements to operate, such as applying a voltage to an input pin lower  
than the ground voltage should be avoided. Furthermore, do not apply a voltage to the input pins when no power  
supply voltage is applied to the IC. Even if the power supply voltage is applied, make sure that the input pins have  
voltages within the values specified in the electrical characteristics of this IC.  
12. Inter-pin Short and Mounting Errors  
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in  
damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power supply and output pin.  
Inter-pin shorts could be due to many reasons such as metal particles, water droplets (in very humid environment) and  
unintentional solder bridge deposited in between pins during assembly to name a few.  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
23/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Ordering Information  
B R  
2 5  
H
x x x  
x - W C  
E 2  
Bus type  
25 : SPI  
Operating  
Temperature  
H : -40°C to +125°C  
Capacity  
010=1K  
080=8K  
Package  
F
020=2K  
040=4K  
160=16K 320=32K  
:SOP8  
FJ  
:SOP-J8  
FVT  
:TSSOP-B8  
W : Double Cell  
C : For Automotive Application  
Packaging and forming specification  
E2  
:Embossed tape and reel  
Lineup  
Package  
Quantity  
Capacity  
Orderable Part Number  
Type  
SOP8  
Reel of 2500  
Reel of 2500  
Reel of 3000  
Reel of 2500  
Reel of 2500  
Reel of 3000  
Reel of 2500  
Reel of 2500  
Reel of 3000  
Reel of 2500  
Reel of 2500  
Reel of 3000  
Reel of 2500  
Reel of 2500  
Reel of 3000  
Reel of 2500  
Reel of 2500  
BR25H010F-WCE2  
BR25H010FJ-WCE2  
BR25H010FVT-WCE2  
BR25H020F-WCE2  
BR25H020FJ-WCE2  
BR25H020FVT-WCE2  
BR25H040F-WCE2  
BR25H040FJ-WCE2  
BR25H040FVT-WCE2  
BR25H080F-WCE2  
BR25H080FJ-WCE2  
BR25H080FVT-WCE2  
BR25H160F-WCE2  
BR25H160FJ-WCE2  
BR25H160FVT-WCE2  
BR25H320F-WCE2  
BR25H320FJ-WCE2  
1K  
2K  
4K  
8K  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
TSSOP-B8  
SOP8  
16K  
32K  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
24/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Physical Dimension, Tape and Reel Information  
Package Name  
SOP8  
(Max 5.35 (include.BURR)  
<Tape and Reel information>  
Tape  
Embossed carrier tape  
2500pcs  
Quantity  
E2  
Direction  
of feed  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
(
)
Direction of feed  
1pin  
Reel  
Order quantity needs to be multiple of the minimum quantity.  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
25/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Physical Dimensions Tape and Reel Information - continued  
Package Name  
SOP-J8  
<Tape and Reel information>  
Tape  
Embossed carrier tape  
2500pcs  
Quantity  
E2  
Direction  
of feed  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
(
)
Direction of feed  
1pin  
Reel  
Order quantity needs to be multiple of the minimum quantity.  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
26/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Physical Dimensions Tape and Reel Information - continued  
Package Name  
TSSOP-B8  
<Tape and Reel information>  
Tape  
Embossed carrier tape  
3000pcs  
Quantity  
E2  
Direction  
of feed  
The direction is the 1pin of product is at the upper left when you hold  
reel on the left hand and you pull out the tape on the right hand  
(
)
Direction of feed  
1pin  
Reel  
Order quantity needs to be multiple of the minimum quantity.  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
27/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Marking Diagrams (TOP VIEW)  
SOP8 (TOP VIEW)  
SOP-J8 (TOP VIEW)  
Part Number Marking  
LOT Number  
Part Number Marking  
LOT Number  
1PIN MARK  
1PIN MARK  
TSSOP-B8 (TOP VIEW)  
Part Number Marking  
LOT Number  
1PIN MARK  
Marking Information  
Product Name  
Marking  
Package  
Type  
Capacity  
SOP8  
1K  
H010  
H020  
H040  
H080  
SOP-J8  
TSSOP-B8  
SOP8  
2K  
4K  
8K  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
TSSOP-B8  
SOP8  
16K  
32K  
H160  
H320  
SOP-J8  
TSSOP-B8  
SOP8  
SOP-J8  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
28/29  
TSZ2211115001  
Daattaasshheeeett  
BR25Hxxx-WC Series (1K 2K 4K 8K 16K 32K)  
Revision History  
Date  
Revision  
Changes  
23.May.2012  
31.Oct.2013  
001  
002  
New Release  
All Page Document converted to new format.  
www.rohm.com  
TSZ02201-0R1R0G100060-1-2  
31.Oct.2013 Rev.002  
© 2012 ROHM Co., Ltd. All rights reserved.  
29/29  
TSZ2211115001  
Daattaasshheeeett  
Notice  
Precaution on using ROHM Products  
(Note 1)  
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment  
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,  
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales  
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way  
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any  
ROHM’s Products for Specific Applications.  
(Note1) Medical Equipment Classification of the Specific Applications  
JAPAN  
USA  
EU  
CHINA  
CLASS  
CLASSⅣ  
CLASSb  
CLASSⅢ  
CLASSⅢ  
CLASSⅢ  
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor  
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate  
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which  
a failure or malfunction of our Products may cause. The following are examples of safety measures:  
[a] Installation of protection circuits or other protective devices to improve system safety  
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure  
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.  
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the  
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our  
Products under any special or extraordinary environments or conditions (as exemplified below), your independent  
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:  
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents  
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust  
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,  
H2S, NH3, SO2, and NO2  
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves  
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items  
[f] Sealing or coating our Products with resin or other coating materials  
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of  
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning  
residue after soldering  
[h] Use of the Products in places subject to dew condensation  
4. The Products are not subject to radiation-proof design.  
5. Please verify and confirm characteristics of the final or mounted products in using the Products.  
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,  
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power  
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect  
product performance and reliability.  
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual  
ambient temperature.  
8. Confirm that operation temperature is within the specified range described in the product specification.  
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in  
this document.  
Precaution for Mounting / Circuit board design  
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product  
performance and reliability.  
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the  
ROHM representative in advance.  
For details, please refer to ROHM Mounting specification  
Notice - SS  
Rev.002  
© 2014 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
Precautions Regarding Application Examples and External Circuits  
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the  
characteristics of the Products and external components, including transient characteristics, as well as static  
characteristics.  
2. You agree that application notes, reference designs, and associated data and information contained in this document  
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely  
responsible for it and you must exercise your own independent verification and judgment in the use of such information  
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses  
incurred by you or third parties arising from the use of such information.  
Precaution for Electrostatic  
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper  
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be  
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,  
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).  
Precaution for Storage / Transportation  
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:  
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2  
[b] the temperature or humidity exceeds those recommended by ROHM  
[c] the Products are exposed to direct sunshine or condensation  
[d] the Products are exposed to high Electrostatic  
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period  
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is  
exceeding the recommended storage time period.  
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads  
may occur due to excessive stress applied when dropping of a carton.  
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of  
which storage time is exceeding the recommended storage time period.  
Precaution for Product Label  
QR code printed on ROHM Products label is for ROHM’s internal use only.  
Precaution for Disposition  
When disposing Products please dispose them properly using an authorized industry waste company.  
Precaution for Foreign Exchange and Foreign Trade act  
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,  
please consult with ROHM representative in case of export.  
Precaution Regarding Intellectual Property Rights  
1. All information and data including but not limited to application example contained in this document is for reference  
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any  
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable  
for infringement of any intellectual property rights or other damages arising from use of such information or data.:  
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any  
third parties with respect to the information contained in this document.  
Other Precaution  
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.  
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written  
consent of ROHM.  
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the  
Products or this document for any military purposes, including but not limited to, the development of mass-destruction  
weapons.  
4. The proper names of companies or products described in this document are trademarks or registered trademarks of  
ROHM, its affiliated companies or third parties.  
Notice - SS  
Rev.002  
© 2014 ROHM Co., Ltd. All rights reserved.  
Daattaasshheeeett  
General Precaution  
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.  
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny  
ROHM’s Products against warning, caution or note contained in this document.  
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior  
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s  
representative.  
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all  
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or  
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or  
concerning such information.  
Notice – WE  
Rev.001  
© 2014 ROHM Co., Ltd. All rights reserved.  

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