BSM080D12P2C008 [ROHM]
本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC MOSFET模块。;
| 型号： | BSM080D12P2C008 |
| 厂家： | 
ROHM |
| 描述： | 本品是使用ROHM生产的SiC-DMOSFET和SiC肖特基势垒二极管的斩波结构的SiC MOSFET模块。 二极管 |
| 文件： | 总12页 (文件大小：1366K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiC Power Module
Datasheet
BSM080D12P2C008
Application
Circuit diagram
Motor drive
1
Inverter, Converter
10
Photovoltaics, wind power generation.
Induction heating equipment.
9
8(N.C)
3,4
5
6
7(N.C)
Features
2
*Do not connnect to NC pin.
1) Low surge, low switching loss.
2) High-speed switching possible.
3) Reduced temperature dependence.
Construction
This product is a half bridge module consisting of SiC-DMOS and SiC SBD from ROHM.
Dimensions & Pin layout (Unit : mm)
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© 2019 ROHM Co., Ltd. All rights reserved.
8.Jul.2019 - Rev.001
1/10
Datasheet
BSM080D12P2C008
Absolute maximum ratings (Tj = 25°C)
Parameter
Conditions
Limit
1200
22
Symbol
VDSS
Unit
V
Drain-source voltage
Gate-source voltage()
Gate-source voltage()
G - S voltage (tsurge<300ns)
G-S short
D-S short
D-S short
VGSS
6
VGSSsurge
ID
IDRM
IS
10 to 26
80
DC(Tc=60°C)
Pulse (Tc=60°C) 1msꢀ*2
Drain current *1
160
A
DC(Tc = 60°C) VGS=18V
80
Source current *1
ISRM
Ptot
Tjmax
Tjop
160
Pulse (Tc=60°C) 1ms VGS=18V
Tc=25°C
Total power disspation *3
Max junction temperature
Junction temperature
Storage temperature
600
W
175
°C
40 to150
40 to125
Tstg
Terminals to baseplate,
f=60Hz AC 1min.
Isolation voltage
Mounting torque
Visol
2500
Vrms
N · m
4.5
3.5
Main Terminals : M6 screw
Mounting to heat shink : M5 screw
(*1) Case temperature (Tc) is defined on the surface of base plate just under the chips.
(*2) Repetition rate should be kept within the range where temperature rise if die should not exceed Tjmax.
(*3) Tj is less than 175°C
Example of acceptable VGS waveform
26V
tsurge
22V
0V
tsurge
6V
10V
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8.Jul.2019 - Rev.001
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Datasheet
BSM080D12P2C008
Electrical characteristics (Tj=25°C)
Parameter
Conditions
Symbol
Min. Typ. Max.
Unit
V
Tj=25°C
Tj=125°C
Tj=150°C
2.8
4.2
4.8
3.5
5.5
On-state static
VDS(on) ID=80A, VGS=18V
IDSS VDS=1200V, VGS=0V
Drain-Source Voltage
Drain cutoff current
1.2
mA
V
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
1.7
2.1
2.3
1.4
1.7
1.8
2.0
3.3
4
0.5
1.6
VGS=0V, IS=80A
VSD
Source-drain voltage
VGS=18V, IS=80A
VDS=10V, ID=13.2mA
VGS=22V, VDS=0V
VGS= 6V, VDS=0V
VGS(th)
IGSS
Gate-source threshold voltage
Gate-source leak current
V
A
0.5
td(on) VGS(on)=18V, VGS(off)=0V
20
30
35
80
40
8
tr
trr
td(off)
tf
VDS=600V
ID=80A
Switching characteristics
ns
RG=0.82
inductive load
VDS=10V, VGS=0V, f=1MHz
Input capacitance
Gate Registance
Stray Inductance
Ciss
RGint Tj=25°C
Ls
nF
nH
mm
mm
mm
mm
3.0
25
11.5
19.0
9.5
13.0
0.25
0.32
Terminal to heat sink
Creepage distance
Clearance distance
Terminal to terminal
Terminal to heat sink
Terminal to terminal
DMOSFET (1/2 module) *4
SBD (1/2 module) *4
Case to heat sink, per 1 module,
Thermal grease applied *5
Junction-to-case thermal
resistance
Case-to-heat sink
Thermal resistance
Rth(j-c)
Rth(c-f)
°C/W
0.035
(*4) Measurement of Tc is to be done at the point just under the chip.
(*5) Typical value is measured by using thermally
conductive grease of λ=0.9W/(m・K).
＜Wavelength for Switching Test＞
Eon=Id×Vds
Eoff=Id×Vds
(*6) SiC devices have lower short cuicuit
trr
withstand capability due to high current density.
Vsurge
Please be advised to pay careful attention
to short cuicuit accident and try to
VDS
90%
90%
adjust protection time to shutdown them
as short as possible.
10%
10%
10%
2%
2%
2%
2%
ID
(*7) If the Product is used beyond absolute maximum
ratings defined in the Specifications, as its internal
structure may be dameged, please replace
such Product with a new one.
90%
10%
V
GS
td(off)
tr
tf
td(on)
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© 2019 ROHM Co., Ltd. All rights reserved.
8.Jul.2019 - Rev.001
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.2 Drain-Source Voltage vs. Drain Current
Fig.1 Typical Output Characteristics
[ Tj=25ºC ]
160
8
VGS=18V
VGS=16V
7
VGS=18V
120
6
Tj=125ºC
VGS=20V
5
Tj=150ºC
VGS=14V
4
80
Tj=25ºC
3
VGS=12V
ꢀ2
40
VGS=10V
1
0
0
0
40
80
120
160
0
2
4
6
8
Drain-Source Voltage : VDS [V]
Drain Current : ID [A]
Fig.4 Static Drain - Source On-State Resistance
Fig.3 Drain-Source Voltage vs.
vs. Junction Temperature
Gate-Source Voltage [ Tj=25ºC ]
8
0.1
Tj=25ºC
7
VGS=12V
0.08
VGS=14V
6
5
4
VGS=16V
0.06
VGS=18V
VGS=20V
0.04
3
ID=80A
2
ID=60A
0.02
ID=40A
ID=20A
1
0
ID=80A
200
Junction Temperature : Tj [ºC]
0
12
14
16
18
20
22
24
0
50
100
150
250
Gate-Source Voltage : VGS [V]
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© 2019 ROHM Co., Ltd. All rights reserved.
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.5 Forward characteristic of Diode
Fig.6 Forward characteristic of Diode
1000
160
120
80
40
0
Tj=25ºC
Tj=150ºC
Tj=125ºC
Tj=125ºC
100
Tj=150ºC
Tj=25ºC
Tj=150ºC
Tj=125ºC
Tj=25ºC
Tj=125ºC
Tj=25ºC
10
Tj=150ºC
VGS=0V
VGS=18V
VGS=0V
VGS=18V
1
0
1
2
3
4
0
1
2
3
4
Source-Drain Voltage : VSD [V]
Source-Drain Voltage : VSD [V]
Fig.7 Drain Current vs. Gate-Source Voltage
Fig.8 Drain Current vs. Gate-Source Voltage
160
1.0E+03
VDS=20V
VDS=20V
Tj=150ºC
1.0E+02
120
80
40
0
Tj=150ºC
1.0E+01
Tj=125ºC
1.0E+00
Tj=125ºC
1.0E-01
Tj=25ºC
Tj=25ºC
1.0E-02
1.0E-03
1.0E-04
0
5
10
15
0
5
10
15
Gate-Source Voltage : VGS [V]
Gate-Source Voltage : VGS [V]
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.10 Switching Characteristics [ Tj=125ºC ]
Fig.9 Switching Characteristics [ Tj=25ºC ]
1000
1000
100
10
100
td(off)
tr
td(off)
tr
tf
td(on)
tf
td(on)
10
VDS=600V
VDS=600V
VGS(on)=18V
V
GS(on)=18V
VGS(off)= 0V
VGS(off)= 0V
RG=0.82
INDUCTIVE LOAD
RG=0.82
INDUCTIVE LOAD
1
1
0
50
100
150
200
0
50
100
150
200
Drain Current : ID [A]
Drain Current : ID [A]
Fig.11 Switching Characteristics [ Tj=150ºC ]
Fig.12 Switching Loss vs. Drain Current
[ Tj=25ºC ]
3
1000
VDS=600V
GS(on)=18V
Eon
V
VGS(off)= 0V
RG=0.82
INDUCTIVE
LOAD
2
1
0
100
td(off)
tr
tf
td(on)
10
Eoff
VDS=600V
V
GS(on)=18V
VGS(off)= 0V
RG=0.82
Err
INDUCTIVE LOAD
1
0
50
100
150
200
0
50
100
150
200
Drain Current : ID [A]
Drain Current : ID [A]
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.13 Switching Loss vs. Drain Current
[ Tj=125ºC ]
Fig.14 Switching Loss vs. Drain Current
[ Tj=150ºC ]
3
3
VDS=600V
VDS=600V
V
GS(on)=18V
VGS(on)=18V
VGS(off)= 0V
Eon
Eon
VGS(off)= 0V
RG=0.82
INDUCTIVE
LOAD
RG=0.82
INDUCTIVE
LOAD
2
1
0
2
1
0
Eoff
Eoff
Err
Err
0
50
100
150
200
0
50
100
150
200
Drain Current : ID [A]
Drain Current : ID [A]
Fig.16 Recovery Characteristics vs.
Fig.15 Recovery Characteristics vs.
Drain Current [ Tj=125ºC ]
Drain Current [ Tj=25ºC ]
100
100
100
100
Irr
Irr
trr
trr
10
10
10
10
VDS=600V
GS(on)=18V
VDS=600V
VGS(on)=18V
V
VGS(off)= 0V
VGS(off)= 0V
RG=0.82
INDUCTIVE
LOAD
RG=0.82
INDUCTIVE
LOAD
1
1
1
1
0
50
100
150
200
0
50
100
150
200
Drain Current : ID [A]
Drain Current : ID [A]
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8.Jul.2019 - Rev.001
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.18 Switching Characteristics vs. Gate
Fig.17 Recovery Characteristics vs.
Drain Current [ Tj=150ºC ]
100
Resistance [ Tj=25ºC ]
100
10
1
1000
100
10
td(off)
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
Irr
tf
trr
tr
td(on)
10
VDS=600V
V
GS(on)=18V
VGS(off)= 0V
RG=0.82
INDUCTIVE
LOAD
1
0
50
100
150
200
0.1
1
10
100
Drain Current : ID [A]
Gate Resistance : RG []
Fig.19 Switching Characteristics vs. Gate
Fig.20 Switching Characteristics vs. Gate
Resistance [ Tj=125ºC ]
Resistance [ Tj=150ºC ]
1000
1000
VDS=600V
ID=80A
VDS=600V
ID=80A
td(off)
td(off)
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
tf
tf
tr
tr
100
100
td(on)
td(on)
10
10
0.1
1
10
100
0.1
1
10
100
Gate Resistance : RG []
Gate Resistance : RG []
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© 2019 ROHM Co., Ltd. All rights reserved.
8.Jul.2019 - Rev.001
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.21 Switching Loss vs. Gate Resistance
[ Tj=25ºC ]
Fig.22 Switching Loss vs. Gate Resistance
[ Tj=125ºC ]
10
10
VDS=600V
ID=80A
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
8
8
Eon
Eoff
6
6
4
2
0
Eon
Eoff
4
2
Err
Err
0
0.1
1
10
100
0.1
1
10
100
Gate Resistance : RG []
Gate Resistance : RG []
Fig.23 Switching Loss vs. Gate Resistance
[ Tj=150ºC ]
10
VDS=600V
ID=80A
VGS(on)=18V
VGS(off)= 0V
INDUCTIVE
LOAD
8
6
4
2
0
Eon
Eoff
Err
0.1
1
10
100
Gate Resistance : RG []
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Datasheet
BSM080D12P2C008
Electrical characteristic curves (Typical)
Fig.24 Typical Capacitance vs. Drain-Source
Fig.25 Gate Charge Characteristics
Voltage
[ Tj=25ºC ]
25
1.E-07
20
15
10
Ciss
1.E-08
Coss
1.E-09
1.E-10
Crss
5
Tj=25ºC
ID=80A
VGS=0V
Tj=25ºC
VDS=600V
200kHz
0
1.E-11
0.01
0
100
200
300
400
500
0.1
1
10
100
1000
Drain-Source Voltage : VDS [V]
Total Gate charge : Qg [nC]
Fig.26 Normalized Transient Thermal
Impedance
1
0.1
Single Pulse
TC=25ºC
Per unit base
DMOS part : 0.25K/W
SBD part : 0.32K/W
0.01
0.0001 0.001
0.01
0.1
1
10
Pulse Width : Pw [s]
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Notice
N o t e s
1) The information contained herein is subject to change without notice.
2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions.
3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.
4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.
5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.
6) The Products specified in this document are not designed to be radiation tolerant.
7) For use of our Products in applications requiring a high degree of reliability (as exemplified
below), please contact and consult with a ROHM representative : transportation equipment (i.e.
cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety
equipment, medical systems, and power transmission systems.
8) Do not use our Products in applications requiring extremely high reliability, such as aerospace
equipment, nuclear power control systems, and submarine repeaters.
9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.
10) ROHM has used reasonable care to ensure the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.
11) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting
non-compliance with any applicable laws or regulations.
12) When providing our Products and technologies contained in this document to other countries,
you must abide by the procedures and provisions stipulated in all applicable export laws and
regulations, including without limitation the US Export Administration Regulations and the Foreign
Exchange and Foreign Trade Act.
13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of
ROHM.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2012 ROHM Co., Ltd. All rights reserved.
R1107
S
Daattaasshheeeett
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall not be in an y way responsible or liable for failure, malfunction or accident arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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