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BSM300C12P3E201 [ROHM]

Power Field-Effect Transistor,;

BSM300C12P3E201


元器件型号：	BSM300C12P3E201
生产厂家：	ROHM
描述和应用：	Power Field-Effect Transistor,
PDF文件：	总11页 (文件大小：1462K)
下载文档：	下载PDF数据表文档文件
型号参数：BSM300C12P3E201参数

BSM300C12P3E301

Power Field-Effect Transistor,

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0 ROHM

BSM300GA100D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 300A I(C)

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55 ETC

BSM300GA120D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 300A I(C)

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75 ETC

BSM300GA120DLC

IGBT-Modules

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70 EUPEC

BSM300GA120DLC

Insulated Gate Bipolar Transistor, 570A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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3 INFINEON

BSM300GA120DN2

IGBT Module

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253 ETC

BSM300GA120DN2

IGBT Power Module

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100 EUPEC

BSM300GA120DN2

Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, SINGLE SWITCH 1, 4 PIN

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9 INFINEON

BSM300GA120DN2E3166

IGBT Power Module (Single switch Including fast free-wheeling diodes Enlarged diode area)

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97 INFINEON

BSM300GA120DN2S

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 430A I(C)

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112 ETC

BSM300GA120DN2S

IGBT Power Module

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42 EUPEC

BSM300GA120DN2S

Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN

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5 INFINEON

BSM300GA120DN2SHOSA1

Insulated Gate Bipolar Transistor, 430A I(C), 1200V V(BR)CES, N-Channel, SSW SENSE 1, 4 PIN

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0 INFINEON

BSM300GA160D

TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 400A I(C)

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73 ETC

BSM300GA170DLC

IGBT Module

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114 ETC

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