BSM400D12P2G003_技术文档

SiC Power Module

Datasheet

BSM400D12P2G003

òApplication

òCircuit diagram

ñ Motor drive

1

7

ñ Inverter, Converter

ñ Photovoltaics, wind power generation.

ñ Induction heating equipment.

9

8

3,4

òFeatures

6

5

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

2

10

NTC

11

òConstruction

This product is a half bridge module consisting of SiC-DMOSFET and SiC-SBD from ROHM.

òDimensions & Pin layout (Unit : mm)

D1

SS1 G1

TH1 TH2

8

9

7

10 11

4

3

1

2

6

5

G2 SS2

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BSM400D12P2G003

Datasheet

òAbsolute maximum ratings (T_j= 25°C)

Symbol

V_DSS

V_GSS

V_GSSsurge

I_D

Parameter

Conditions

G-S short

Ratings

Unit

V

1200

22

Drain - Source Voltage

Gate - Source Voltage (+)

Gate - Source Voltage (-)

G - S Voltage (t_surge<300nsec)

D-S short

-6

D-S short

-10 to 26

397

DC(Tc=60°C) VGS=18V

DC(Tc=59℃) VGS=18V

Pulse (Tc = 60°C） 1ms VGS=18V

DC(Tc=60°C) VGS=18V

DC(Tc=60°C) VGS=0V

Pulse (Tc = 60°C） 1ms VGS=18V

Pulse (Tc = 60°C） 1ms VGS=0V

Tc = 25°C

I_D

Drain Current _{Note 1)}

400

I_DRM

I_S

800

Note 2)

418

A

I_S

418

Source Current _{Note 1)}

I_SRM

800

Note 2)

800

Total Power Dissipation _{Note 3)}

Max Junction Temperature

Junction Temperature

Storage Temperature

Isolation Voltage

Ptot

Tjmax

Tjop

2450

175

W

-40 to 150

-40 to 125

2500

4.5

°C

Tstg

Visol

Terminals to baseplate f = 60Hz AC 1 min.

Main Terminals : M6 screw

Vrms

-

N ・m

Mounting Torque

Mounting to heat sink M5 screw

3.5

Note 1) Case temperature (Tc) is defined on the surface of base plate just under the chips.

Note 2) Repetition rate should be kept within the range where temperature rise if die should not

exceed Tjmax.

Note 3) Tj is less than 175°C.

Example of acceptable VGS waveform

+26V

+22V

0V

-6V

-10V

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BSM400D12P2G003

Datasheet

òElectrical characteristics (T_j=25°C)

Ratings

Min. Typ. Max.

Parameter

Symbol

VDS(on)

IDSS

Conditions

Unit

Tj=25°C

－

2.3

3.3

3.8

3.2

On-state static

Drain-Source

Voltage

ID=400A,VGS=18V

Tj=125°C

Tj=150°C

－

V

4.6

VDS=1200V,VGS=0V

－

4

mA

Drain Cutoff Current

Tj=25°C

－

1.8

2.3

2.4

1.4

1.7

1.8

2.1

－

VGS=0V,IS=400A

Tj=125°C

Tj=150°C

Tj=25°C

3.4

－

Souce-Drain

Voltage

VSD

V

VGS=18V,IS=400A

Tj=125°C

Tj=150°C

－

Gate-Source

Threshold Voltage

Gate-Source

VDS=10V,ID=85mA

VGS(th)

IGSS

1.6

－

4

V

VGS=22V,VDS=0V

VGS=-6V,VDS=0V

－

-0.5

－

0.5

－

61

80

µA

Leak Current

td(on)

tr

60

VGS(on)=18V、VGS(off)=0V

VDS=600V

ID=400A

RG(on)=0.2 ohm, RG(off)=0.2 ohm

Inductive load

50

Switching

Characteristics

trr

70

ns

td (off)

tf

240

75

VDS=10V,VGS=0V,200kHz

Tj=25°C

Ciss

RGint

R25

38

nF

Ω

Input Capacitance

Gate Registance

NTC Rated Resistance

NTC B Value

1.4

5.0

3370

10.0

16.7

12.0

11.0

－

kΩ

K

B50/25

Ls

nH

mm

Stray Inductance

Terminal to heat sink

Terminal to terminal

-

Creepage Distance

Clearance Distance

Terminal to heat sink

-

Terminal to terminal

DMOSFET（1/2 module） Note 4)

SBD（1/2 module） Note 4)

Junction-to -Case

Thermal Resistance

Case-to -heat sink

Thermal Resistance

Rth(j-c)

Rth(c-f)

－

°C/kW

Case to heat sink, per 1 module. Thermal grease

－

15

－

applied. Note 5）

Note 4) Measurement of Tc is to be done at the

point just under the chip.

＜Wavelength for Switching Test＞

Eon=Id×Vds

Eoff=Id×Vds

trr

Note 5) Typical value is measured by using

Vsurge

thermally conductive grease of λ=0.9W/(m・K).

VDS

90%

If the Product is used beyond absolute maximum

ratings defined in the Specifications, as its

internal structure may be dameged, please

replace such Product with a new one.

Note 6)

10%

2%

ID

90%

10%

VGS

td(off)

td(on)

tr

tf

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.2 Drain source voltage characteristic

Fig.1 Output characteristic 25°Cꢀ(TYP)

(TYP)

6

5

4

3

2

1

0

800

VGS=16V

700

Tj=150℃

VGS=18V

600

VGS=20V

500

VGS=14V

Tj=125℃

Tj=25℃

400

300

200

100

0

VGS=12V

VGS=10V

0

2

4

6

8

0

100 200 300 400 500 600 700 800

Drain current ID (A)

Drain source voltage VDS (V)

Fig.3 Drain source voltage characteristic

Fig.4 Ron vs Tj characteristic (TYP)

25°C (TYP)

5

16

14

12

10

8

VGS=12V

VGS=14V

4

VGS=16V

VGS=18V

3

2

1

0

Tj=25℃

VGS=20V

ID=400A

ID=300A

6

ID=400A

ID=200A

ID=100A

4

2

0

50

100

150

200

250

12

14

16

18

20

22

24

Gate source voltage VGS (V)

Junction temperature Tj (°C)

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.5 Forward characteristic of Diode

Fig.6 Forward characteristic of Diode

(TYP)

1000

800

700

600

500

400

300

200

100

0

Tj=25℃

VGS=18V

Tj=150℃

VGS=18V

Tj=125℃

100

Tj=150℃

VGS=0V

Tj=25℃

Tj=125℃

VGS=0V

10

0

1

2

3

4

0

1

2

3

4

5

Source drain voltage VSD (V)

Fig.7 Drain Current vs Gate Voltage (TYP)

800

Fig.8 Drain Current vs Gate Voltage (TYP)

1.0E+03

700

Tj=150℃

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

Tj=150℃

600

Tj=125℃

VDS=20V

500

Tj=125℃

400

Tj=25℃

VDS=20V

300

Tj=25℃

200

100

0

5

10

15

0

5

10

15

Gate Source Voltage VGS (V)

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.9 Switching time vs drain current at

Fig.10 Switching time vs drain current at

125°C (TYP)

25°C (TYP)

1000

100

10

1000

td(off)

tf

tr

100

td(on)

tf

td(on)

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=0.2Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

10

1

RG(on)=0.2Ω

RG(off)=0.2Ω

VDS=600V

VGS(on)=18V

VGS(off)=0V

INDUCTIVE LOAD

1

0

200

400

600

800

1000

0

200

400

600

800

1000

Drain current ID (A)

Fig.11 Switching time vs drain current at

Fig.12 Switching loss vs drain current at

150°C (TYP)

1000

25°C (TYP)

40

VDS=600V

VGS(on)=18V

35

Eon

td(off)

VGS(off)=0V

30

tf

RG(on)=0.2Ω

100

RG(off)=0.2Ω

INDUCTIVE LOAD

tr

25

20

15

10

5

Eoff

td(on)

RG(on)=0.2Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

VDS=600V

10

1

VGS(on)=18V

VGS(off)=0V

Err

800

0

200

400

600

1000

0

200

400

600

800

1000

Drain current ID (A)

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.13 Switching loss vs drain current at

125°C (TYP)

Fig.14 Switching loss vs drain current at

150°C (TYP)

40

35

30

25

20

15

10

5

40

VDS=600V

VGS(on)=18V

VGS(off)=0V

VDS=600V

VGS(on)=18V

VGS(off)=0V

35

30

25

20

15

10

5

Eon

RG(on)=0.2Ω

RG(off)=0.2Ω

Eon

RG(on)=0.2Ω

RG(off)=0.2Ω

INDUCTIVE LOAD

Eoff

INDUCTIVE LOAD

Eoff

Err

800

0

200

400

600

1000

0

200

400

600

800

1000

Drain current ID (A)

Fig.15 Recovery characteristic vs drain

current at 25°C (TYP)

Fig.16 Recovery characteristic vs drain

current at 125°C (TYP)

100

1000

100

1000

100

10

trr

Irr

10

100

10

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2Ω

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2Ω

INDUCTIVE LOAD

1

10

1

0

200

400

600

800

0

200

400

600

800

Drain current ID (A)

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.17 Recovery characteristic vs drain

current at 150°C (TYP)

Fig.18 Switching time vs gate resistance

at 25°C (TYP)

10000

1000

100

10

1

1000

V_DS=600V

I_D=400A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

trr

Irr

td(off)

tf

100

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=0.2Ω

td(on)

INDUCTIVE LOAD

tr

10

0.1

1

10

0

200

400

600

800

Drain current ID (A)

Gate resistance RG (Ω)

Fig.19 Switching time vs gate resistance

at 125°C (TYP)

Fig.20 Switching time vs gate resistance

at 150°C (TYP)

10000

V_DS=600V

I_D=400A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=600V

I_D=400A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

td(off)

tf

td(off)

tf

1000

100

10

1000

100

10

td(on)

tr

0.1

1

10

0.1

1

10

Gate resistance RG (Ω)

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.21 Switching loss vs gate resistance

at 25°C (TYP)

100

Fig.22 Switching loss vs gate resistance

at 125°C (TYP)

100

80

60

40

20

0

V_DS=600V

I_D=400A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=600V

I_D=400A

V_GS(on)=18V

V_GS(off)=0V

80

60

40

20

0

Eon

INDUCTIVE LOAD

Eoff

Err

0.1

1

10

0.1

1

10

Gate resistance RG (Ω)

Fig.23 Switching loss vs gate resistance

at 150°C (TYP)

100

V_DS=600V

I_D=400A

V_GS(on)=18V

V_GS(off)=0V

Eon

80

60

40

20

0

INDUCTIVE LOAD

Eoff

Err

0.1

1

10

Gate resistance RG (Ω)

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BSM400D12P2G003

Datasheet

òElectrical characteristic curves (Typical)

Fig.24 Capacitance vs Drain source

Fig.25 Gate charge characteristic (TYP)

voltage (TYP)

1.E-07

25

20

15

10

5

Ciss

1.E-08

Tj=25℃

VGS=0V

200kHz

Coss

Crss

ID=400A

V_DS=600V

Tj=25℃

1.E-09

1.E-10

0

0.01

0.1

1

10

100

1000

0

500

1000 1500 2000 2500

Drain source voltage VDS (V)

Gate charge QG (nC)

Fig.26 Transient thermal impedance (TYP)

1

Single Pulse

Tc=25℃

0.1

Per unit base

DMOS part : 61℃/kW

SBD part :80℃/kW

0.01

0.0001 0.001 0.01

0.1

1

10

Time (s)

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13.Feb.2018 - Rev.001

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensur the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1102

S


型号：	BSM400D12P2G003
厂家：	ROHM
描述：	BSM400D12P2G003是由SiC-DMOSFET和SiC-SBD构成的半桥功率模块。适合电机驱动、逆变器、转换器、光发电、风力发电及IH装置等用途。 SiC支持页面评估板应用实例罗姆SiC器件什么是SiC？电子基础电子电机驱动装置转换器
文件：	总11页 (文件大小：787K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSM400D12P2G003 [ROHM]

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