BSM600D12P4G103 (新产品)

SiC Power Module

Datasheet

BSM600D12P4G103

lApplication

lCircuit diagram

 Motor drive

 Inverter, Converter

 Photovoltaics, wind power generation.

 Induction heating equipment.

lFeatures

1) Low surge, low switching loss.

2) High-speed switching possible.

3) Reduced temperature dependence.

lConstruction

This product is a half bridge module consisting of SiC-UMOSFET from ROHM.

lDimensions & Pin layout (Unit : mm)

D1

SS1 G1

TH1 TH2

8

9

7

10 11

4

3

1

2

6

5

G2 SS2

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22.Aug.2022 - Rev.001

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BSM600D12P4G103

Datasheet

lAbsolute maximum ratings (T_j= 25°C)

Symbol

V_DSS

V_GSS

V_GSSsurge

I_D

Parameter

Conditions

G-S short

D-S short

Ratings

Unit

V

1200

21

Drain - Source Voltage

Gate - Source Voltage (+)

Gate - Source Voltage (-)

G - S Voltage (t_surge<300nsec)

D-S short

-4

D-S short

-4 to 23

567

Note 1)

DC(Tc=60°C) V_GS=18V

Pulse (Tc = 60°C） 1ms V_GS=18V

DC(Tc=60°C) V_GS=18V

Drain Current _{Note 2)}

I_DRM

1200

567

Note 3)

I_S

A

I_SRM

Pulse (Tc = 60°C） 1ms V_GS=18V

Pulse (Tc = 60°C） 1.5μs V_GS=0V

Tc = 25°C

Source Current _{Note 2)}

1200

1780

175

Note 3)

I_SRM

Note 3) 4)

Total Power Dissipation _{Note 5)}

Max Junction Temperature

Junction Temperature

Storage Temperature

Isolation Voltage

Ptot

Tjmax

Tjop

W

-40 to 150

-40 to 125

2500

4.5

°C

Tstg

Visol

Terminals to baseplate f = 60Hz AC 1 min.

Main Terminals : M6 screw

Vrms

-

N ・m

Mounting Torque

Mounting to heat sink M5 screw

3.5

Note 1) Please note especially when using driver source that V_GSSsurgemust be in the range of

absolute maximum rating.

Note 2) Case temperature (Tc) is defined on the surface of base plate just under the chips.

Note 3) Repetition rate should be kept within the range where temperature rise if die should not

exceed Tjmax.

Note 4) Repititive pulse, PW≦1.5μs, PW≦5%

Note 5) Tj is less than 175°C.

Example of acceptable V_GSwaveform

＜Wavelength for Switching Test＞

+23V

+21V

Eon=Id×Vds

Eoff=Id×Vds

tsurge

trr

Vsurge

VDS

90%

10%

2%

ID

90%

10%

VGS

td(off)

td(on)

tr

tf

-4V

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BSM600D12P4G103

Datasheet

lElectrical characteristics (T_j=25°C)

Ratings

Min. Typ. Max.

Parameter

Symbol

VDS(on)

IDSS

Conditions

I_D=600A,V_GS=18V

V_DS=1200V, V_GS=0V

Unit

Tj=25°C

－

1.6

2.4

2.7

2.0

On-state static

Drain-Source

Voltage

Tj=125°C

Tj=150°C

－

V

3.3

－

1

mA

Drain Cutoff Current

Tj=25°C

－

4.3

4.7

1.5

2.4

2.7

－

VGS=0V, IS=600A

Tj=125°C

Tj=150°C

Tj=25°C

Souce-Drain

Voltage

V_SD

V

V_GS=18V, I_S=600A

V_DS=10V, I_D=291.2mA

Tj=125°C

Tj=150°C

Gate-Source

Threshold Voltage

Gate-Source

VGS(th)

IGSS

2.8

－

4.8

V

Note 6)

V_GS=21V, V_DS=0V

V_GS=-4V, V_DS=0V

－

-0.5

－

0.5

－

μA

Leak Current

td(on)

tr

135

110

35

V_GS(on)=18V, V_GS(off)=0V

V_DS=600V

Switching

Characteristics

trr

I_D=600A

ns

R_G(on)=4.7 ohm, R_G(off)=2.7 ohm

Inductive load

td (off)

tf

435

90

V_DS=10V, V_GS=0V, 200kHz

Tj=25°C

Ciss

RGint

R²⁵

59

nF

ꢀ

Input Capacitance

Gate Registance

NTC Rated Resistance

NTC B Value

0.13

5.0

kꢀ

K

B25/50

Ls

3370

14.1

16.7

12.0

11.0

nH

mm

Stray Inductance

Terminal to heat sink

Terminal to terminal

Terminal to heat sink

Terminal to terminal

-

Creepage Distance

Clearance Distance

-

Junction-to -Case

Thermal Resistance

Case-to -heat sink

Thermal Resistance

UMOSFET（1/2 module） _{Note 7)}

Rth(j-c)

Rth(c-f)

－

84.1

°C/kW

Case to heat sink, per 1 module. Thermal grease

applied. _{Note 8）}

15

－

Tested after applying V_GS= 21V for 100ms.

Note 6)

Note 7)

Measurement of Tc is to be done at the point just under the chip.

Note 8) Typical value is measured by using thermally conductive grease of λ=0.9W/(m・K).

Note 9) SiC devices have lower short cuicuit withstand capability due to high current density.

Please be advised to pay careful attention to short cuicuit accident and try to adjust

protection time to shutdown them as short as possible.

If the Product is used beyond absolute maximum ratings defined in the Specifications,

as its internal structure may be dameged, please replace such Product with a new one.

Note 10)

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.2 Drain source voltage characteristic

(TYP)

Fig.1 Output characteristic 25°Cꢀ(TYP)

4

3.5

3

1200

V_GS=18V

Tj=150℃

V_GS=14V

1000

V_GS=16V

800

V_GS=18V

2.5

2

V_GS=12V

Tj=125℃

600

400

200

0

V_GS=20V

1.5

1

V_GS=10V

0.5

0

Tj=25℃

0

1

2

3

4

0

200 400 600 800 1000 1200

Drain current I_D(A)

Drain source voltage V_DS(V)

Fig.3 Drain source voltage characteristic

25°C (TYP)

2.5

Fig.4 Ron vs Tj characteristic (TYP)

6

VGS=12V

5.5

5

VGS=14V

2

VGS=16V

VGS=18V

VGS=20V

ID=600A

4.5

4

1.5

ID=500A

1

ID=400A

3.5

3

ID=300A

ID=600A

0.5

2.5

2

0

50

100

150

200

250

12

14

16

18

20

22

24

Gate Source Voltage V_GS(V)

Junction temperature Tj (°C)

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.5 Forward characteristic of Diode

Fig.6 Forward characteristic of Diode

(TYP)

1000

1200

1000

800

600

400

200

0

Tj=25℃

100

V_GS=0V

V_GS=18V

10

Tj=150℃

Tj=125℃

1

Tj=150℃

Tj=125℃

V_GS=0V

Tj=25℃

0.1

0

1

2

3

4

0

1

2

3

4

5

Source drain voltage V_SD(V)

Fig.7 Drain Current vs Gate Voltage (TYP)

900

Fig.8 Drain Current vs Gate Voltage (TYP)

1.0E+03

800

Tj=150℃

1.0E+02

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

V_DS=20V

700

600

Tj=125℃

500

Tj=150℃

400

300

V_DS=20V

200

Tj=125℃

100

Tj=25℃

0

5

10

0

2

4

6

8

10

Gate Source Voltage V_GS(V)

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22.Aug.2022 - Rev.001

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.9 Switching time vs drain current at

Fig.10 Switching time vs drain current at

125°C (TYP)

25°C (TYP)

1000

100

10

1000

td(off)

tf

td(off)

td(on)

tf

100

tr

RG(on)=4.7ꢀ

VGS(on)=18V RG(off)=2.7ꢀ

VDS=600V

RG(on)=4.7ꢀ

VDS=600V

VGS(on)=18V RG(off)=2.7ꢀ

VGS(off)=0V

INDUCTIVE LOAD

VGS(off)=0V

INDUCTIVE LOAD

10

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

Fig.11 Switching time vs drain current at

150°C (TYP)

1000

Fig.12 Switching loss vs drain current at

25°C (TYP)

80

Eoff

td(off)

VDS=600V

70

VGS(on)=18V

VGS(off)=0V

RG(on)=4.7ꢀ

60

RG(off)=2.7ꢀ

Eon

tf

50

40

30

20

10

0

INDUCTIVE LOAD

td(on)

100

tr

RG(on)=4.7ꢀ

VDS=600V

VGS(on)=18V RG(off)=2.7ꢀ

VGS(off)=0V

INDUCTIVE LOAD

Err

10

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

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22.Aug.2022 - Rev.001

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.13 Switching loss vs drain current at

Fig.14 Switching loss vs drain current at

150°C (TYP)

125°C (TYP)

80

70

60

50

40

30

20

10

0

80

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=4.7ꢀ

RG(off)=2.7ꢀ

INDUCTIVE LOAD

VDS=600V

VGS(on)=18V

VGS(off)=0V

RG(on)=4.7ꢀ

RG(off)=2.7ꢀ

INDUCTIVE LOAD

Eoff

Eon

Err

70

60

50

40

30

20

10

0

Eon

Err

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

0

200 400 600 800 1000 1200 1400

Drain current I_D(A)

Fig.15 Recovery characteristic vs drain

current at 25°C (TYP)

Fig.16 Recovery characteristic vs drain

current at 125°C (TYP)

100

1000

100

1000

100

10

trr

Irr

10

100

10

V_DS=600V

V_GS(on)=18V

V_GS(off)=0V

R_G=4.7ꢀ

V_GS(on)=18V

V_GS(off)=0V

R_G=4.7ꢀ

INDUCTIVE LOAD

1

10

1

0

200 400 600 800 100012001400

Drain current I_D(A)

0

200 400 600 800 100012001400

Drain current I_D(A)

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22.Aug.2022 - Rev.001

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.17 Recovery characteristic vs drain

current at 150°C (TYP)

Fig.18 Switching time vs gate resistance

at 25°C (TYP)

10000

1000

100

10

1

1000

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

trr

Irr

td(off)

100

td(on)

V_DS=600V

tf

tr

V_GS(on)=18V

V_GS(off)=0V

R_G=4.7ꢀ

INDUCTIVE LOAD

10

1

10

0

200 400 600 800 100012001400

Drain current I_D(A)

Gate resistance R_G(ꢀ)

Fig.19 Switching time vs gate resistance

at 125°C (TYP)

Fig.20 Switching time vs gate resistance

at 150°C (TYP)

10000

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

td(off)

1000

100

10

1000

100

10

tf

td(on)

tr

td(on)

tr

1

10

1

10

Gate resistance R_G(ꢀ)

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.21 Switching loss vs gate resistance

at 25°C (TYP)

Fig.22 Switching loss vs gate resistance

at 125°C (TYP)

80

70

60

50

40

30

20

10

0

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

V_DS=600V

I_D=600A

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

70

60

50

40

30

20

10

0

Eoff

Eon

Err

Eon

Err

1

10

1

10

Gate resistance R_G(ꢀ)

Fig.23 Switching loss vs gate resistance

at 150°C (TYP)

80

V_DS=600V

I_D=600A

70

V_GS(on)=18V

V_GS(off)=0V

INDUCTIVE LOAD

60

50

40

30

20

10

0

Eoff

Eon

Err

1

10

Gate resistance R_G(ꢀ)

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BSM600D12P4G103

Datasheet

lElectrical characteristic curves (Typical)

Fig.24 Capacitance vs Drain source

Fig.25 Gate charge characteristic (TYP)

voltage (TYP)

1.E-06

25

20

15

10

5

Ciss

1.E-07

1.E-08

1.E-09

1.E-10

1.E-11

Tj=25℃

VGS=0V

200kHz

Coss

Crss

ID=600A

V_DS=600V

Tj=25℃

0

0.1

1

10

100

1000

0

1000

2000

3000

Drain source voltage V_DS(V)

Gate charge Q_G(nC)

Fig.26 Transient thermal impedance (TYP)

1

Single Pulse

Tc=25℃

0.1

Per unit base

UMOS part:84.1℃/kW

0.01

0.0001 0.001 0.01

0.1

1

10

Time (s)

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Notice

N o t e s

1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-

tions.

3) Although ROHM is continuously working to improve product reliability and quality, semicon-

ductors can break down and malfunction due to various factors.

Therefore, in order to prevent personal injury or fire arising from failure, please take safety

measures such as complying with the derating characteristics, implementing redundant and

fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no

responsibility for any damages arising out of the use of our Poducts beyond the rating specified by

ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are

provided only to illustrate the standard usage and operations of the Products. The peripheral

conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and

examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,

any license to use or exercise intellectual property or other rights held by ROHM or any other

parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of

such technical information.

6) The Products specified in this document are not designed to be radiation tolerant.

7) For use of our Products in applications requiring a high degree of reliability (as exemplified

below), please contact and consult with a ROHM representative : transportation equipment (i.e.

cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety

equipment, medical systems, and power transmission systems.

8) Do not use our Products in applications requiring extremely high reliability, such as aerospace

equipment, nuclear power control systems, and submarine repeaters.

9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with

the recommended usage conditions and specifications contained herein.

10) ROHM has used reasonable care to ensure the accuracy of the information contained in this

document. However, ROHM does not warrants that such information is error-free, and ROHM

shall have no responsibility for any damages arising from any inaccuracy or misprint of such

information.

11) Please use the Products in accordance with any applicable environmental laws and regulations,

such as the RoHS Directive. For more details, including RoHS compatibility, please contact a

ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting

non-compliance with any applicable laws or regulations.

12) When providing our Products and technologies contained in this document to other countries,

you must abide by the procedures and provisions stipulated in all applicable export laws and

regulations, including without limitation the US Export Administration Regulations and the Foreign

Exchange and Foreign Trade Act.

13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of

ROHM.

Thank you for your accessing to ROHM product informations.

More detail product informations and catalogs are available, please contact us.

ROHM Customer Support System

http://www.rohm.com/contact/

www.rohm.com

R1107

S

Daattaasshheeeett

General Precaution

1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.

ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any

ROHM’s Products against warning, caution or note contained in this document.

2. All information contained in this document is current as of the issuing date and subject to change without any prior

notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales

representative.

3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all

information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or

liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or

concerning such information.

Notice – WE

Rev.001


型号：	BSM600D12P4G103 (新产品)
厂家：	ROHM
描述：	BSM600D12P4G103 is a half bridge module consisting of SiC-UMOSFET, suitable for motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
文件：	总12页 (文件大小：871K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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