BU4011B/BF/BFV [ROHM]
Standard LSIs ; 标准的LSI\n
| 型号： | BU4011B/BF/BFV |
| 厂家： | 
ROHM |
| 描述： | Standard LSIs
|
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Standard ICs
Quad 2-input NAND gate
BU4011B / BU4011BF / BU4011BFV
The BU4011B, BU4011BF, and BU4011BFV are dual-input positive logic NAND gates.
Four circuits are contained on a single chip. An inverter-based buffer has been added to the gate output, enabling
improved input / output propagation characteristics, and an increased load capacitance minimizes fluctuation in prop-
agation time.
Features
1) Low power dissipation.
•
4) High fan-out.
2) Wide range of operating power supply voltage.
3) High input impedance.
5) Direct drive of 2 L-TTL inputs and 1 LS-TTL input.
Block diagram
•
A1
B1
1
2
3
4
5
6
7
14 VDD
13 A4
12 B4
11 O4
10 O3
O1
O2
B2
A2
9
8
B3
A3
VSS
Absolute maximum ratings (VSS = 0V, Ta = 25°C)
•
Parameter
Symbol
VDD
Limits
Unit
V
Power supply voltage
– 0.3 ~ + 18
1000 (DIP), 450 (SOP)
350 (SSOP-B14)
Power dissipation
Pd
mW
Operating temperature
Storage temperature
Input voltage
Topr
Tstg
VIN
– 40 ~ + 85
°C
°C
V
– 55 ~ + 150
– 0.3 ~ VDD + 0.3
1
Standard ICs
BU4011B / BU4011BF / BU4011BFV
Electrical characteristics
•
DC characteristics (unless otherwise noted, VSS = 0V, Ta = 25°C)
Measurement
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
—
circuit
VDD (V)
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
3.5
7.0
Input high-level voltage
VIH
V
V
10
15
5
Fig. 1
—
11.0
—
1.5
3.0
4.0
0.3
– 0.3
—
—
—
Input low-level voltage
VIL
10
15
15
15
5
Fig. 1
—
—
Input high-level current
Input low-level current
IIH
IIL
µA
µA
VIH = 15V
Fig. 1
Fig. 1
—
VIL = 0V
4.95
9.95
14.95
—
Output high-level voltage
Output low-level voltage
Output high-level current
Output low-level current
Static current dissipation
VOH
VOL
IOH
IOL
—
V
10
15
5
IO = 0mA
Fig. 1
Fig. 1
Fig. 1
Fig. 1
—
—
0.05
0.05
0.05
—
—
V
10
15
5
IO = 0mA
—
– 0.16
– 0.4
– 1.2
0.44
1.1
VOH = 4.6V
VOH = 9.5V
VOH = 13.5V
VOL = 0.4V
VOL = 0.5V
VOL = 1.5V
—
mA
mA
µA
10
15
5
—
—
—
10
15
5
—
3.0
—
1
—
IDD
2
10
15
VI = VDD or GND
—
4
2
Standard ICs
BU4011B / BU4011BF / BU4011BFV
Switching characteristics (unless otherwise noted, Ta = 25°C, Vss = 0V, CL = 50pF)
Measurement
circuit
Parameter
Symbol
tTLH
Min.
Typ.
Max.
Unit.
ns
Conditions
—
VDD (V)
5
—
—
—
—
—
—
—
—
—
—
—
—
—
180
90
65
100
50
40
90
50
40
90
50
40
5
360
180
130
200
100
80
Output rise time
10
15
5
Fig. 2
Fig. 2
Fig. 2
—
—
Output fall time
tTHL
ns
ns
10
15
5
180
100
80
“L” to “H”
Propagation delay time
tPLH
10
15
5
180
100
80
“H” to “L”
Propagation delay time
—
—
tPHL
ns
10
15
—
Fig. 2
—
—
Input capacitance
CIN
pF
Measurement circuits
•
VDD
A
V
GND
Fig. 1 DC characteristics
20ns
20ns
VDD
90%
50%
Input waveform
10%
tPHL
tPLH
90%
50%
Output waveform
CL = 50pF
GND
10%
P.G
tTHL
tTLH
Fig. 2 Switching characteristics
3
Standard ICs
BU4011B / BU4011BF / BU4011BFV
Electrical characteristic curve
•
1200
1000
800
DIP14
600
400
200
0
SOP14
SSOP - B14
0
25
50
75
100
125
150
AMBIENT TEMPERATURE: Ta (°C)
Fig. 3 Power dissipation vs. Ta
External dimensions (Units: mm)
•
BU4011B
BU4011BF
8.7 ± 0.2
19.4 ± 0.3
14
1
8
7
8
14
1
7.62
7
1.27
0.4 ± 0.1
0.3Min.
2.54
0.5 ± 0.1
0° ~ 15°
0.15
DIP14
SOP14
BU4011BFV
5.0 ± 0.2
14
8
7
1
0.65
0.22 ± 0.1
0.3Min.
0.1
SSOP - B14
4
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