BU90002GWZ_11 [ROHM]

Output 1.0A High-efficiency Step-down Switching regulators with Built-in Power MOSFET; 输出1.0A高效率降压开关稳压器具有内置功率MOSFET
BU90002GWZ_11
型号: BU90002GWZ_11
厂家: ROHM    ROHM
描述:

Output 1.0A High-efficiency Step-down Switching regulators with Built-in Power MOSFET
输出1.0A高效率降压开关稳压器具有内置功率MOSFET

稳压器 开关
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中文:  中文翻译
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Single-chip Type with Built-in FET Switching Regulator Series  
Output 1.0A High-efficiency  
Step-down Switching regulators with  
Built-in Power MOSFET  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ,  
No.11xxxEATxx  
Description  
The BU9000XGWZ are a high efficiency 6MHz synchronous step-down switching regulator with ultra low current PFM  
mode.  
It provides up to 1.0A load current and an input voltage range from 3.0V to 5.5V, optimized for battery powered portable  
applications.  
BU9000XGWZ has a mode control pin that allows the user to select Forced PWM(Pulse Width Modulation)mode or  
PFM(Pulse Frequency Modulation) and PWM auto change mode utilized power save operation at light load current.  
Features  
1) 93% peak efficiency  
2) 4 to 6 MHz switching frequency  
3) Input voltage VIN=2.3V to 5.5V(BU90003BU90006), VIN=4.0V to 5.5V (BU90002)  
4) 45uA typical quiescent current  
5) Fast transient response  
6) Automatic PFM/PWM operation  
7) Forced PWM operation  
8) Internal Soft Start  
9) Under voltage lockout  
10) Over current protection  
11) Thermal shutdown  
12) Ultra small and low profile WLCSP (1.3mm×0.9mm t=0.40mm MAX) (UCSP35L1 )  
Applications  
Cell phones, Smart phones, Portable applications and Micro DC/DC modules, USB accessories  
Operating range  
Part No.  
Output voltage  
3.30V  
Input voltage  
4.0V to 5.5V  
2.3V to 5.5V  
2.3V to 5.5V  
2.3V to 5.5V  
BU90002GWZ  
BU90003GWZ  
BU90004GWZ  
BU90005GWZ  
1.20V  
1.80V  
2.50V  
BU90006GWZ  
3.00V  
2.3V to 5.5V  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
Target spec. ver.1.7  
1/14  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Absolute maximum ratings  
Parameter  
Symbol  
VIN  
Rating  
7
Unit  
V
Maximum input power supply voltage  
VEN, VFB,  
VLX, VMODE  
Maximum voltage at EN, FB, LX, MODE  
7
V
Power dissipation  
Pd  
Topr  
Tstg  
0.39(*1)  
-40 +85  
-55 +125  
+125  
W
Operating temperature range  
Storage temperature range  
Junction temperature  
Tjmax  
(*1) When mounted on the specified PCB (55mm x 63mm), Deducted by 3.9m W/c when used over Ta=25c  
Operating conditions Ta=25c, VIN=3.6V(BU90003GWZBU90006GWZ),VIN=5.0V(BU90002GWZ)  
Rating  
Typ.  
Item  
Symbol  
Unit  
Condition  
Min.  
Max.  
Switching regulator】  
MODE:H(PWM Operation)  
-2  
-2  
-
-
+2  
+3  
VOUTA  
%
MODE:L(PWM/PFM Operation)  
Output voltage accuracy  
3.0VVIN5.5V  
2.7VVIN3.0V  
2.3VVIN2.7V  
IoutMax1  
IoutMax2  
IoutMax3  
-
-
-
-
-
-
1.0  
0.8  
0.6  
A
A
A
Soft start】  
Soft start time  
Frequency control】  
Tss  
65  
120  
6.0  
240  
6.6  
usec  
MHz  
No load  
5.4  
BU90002GWZ,BU90005GWZ  
BU90006GWZ  
No load  
BU90004GWZ  
No load  
Switching frequency  
fosc  
4.8  
3.6  
5.4  
4.0  
6.0  
4.4  
MHz  
MHz  
BU90003GWZ  
Driver】  
RonP1  
RonP2  
RonN1  
RonN2  
-
-
250  
300  
220  
250  
400  
450  
350  
380  
mOhm VIN=5.0V  
mOhm VIN=3.6V  
mOhm VIN=5.0V  
mOhm VIN=3.6V  
PchFET on resistance  
NchFET on resistance  
Control】  
EN pin  
control  
voltage  
Operation  
VENH  
VENL  
1.4  
0
-
-
-
VIN  
0.4  
V
V
Non Operation  
Operation  
MODE pin  
control  
voltage  
VMODEH  
1.4  
VIN  
V
V
Forced PWM  
Non Operation  
VMODEL  
0
-
0.4  
Automatic PFM/PWM  
UVLO】  
Protect threshold voltage  
Hysteresis  
Uvth  
1.95  
50  
2.05  
100  
2.15  
150  
V
Uvhy  
mV  
Current limit】  
PMOS current detect,  
Open loop  
Current limit threshold  
ILIMIT  
DRES  
1.5  
55  
1.7  
1.9  
A
Output discharge】  
Output discharge resistance  
Circuit current】  
110  
220  
Ohm  
EN=0V  
EN:H, MODE:L,  
VOUT=3.6V forced  
Not switching  
Operating quiescent current  
Shutdown current  
IINS  
SHD  
-
-
45  
0
65  
1
uA  
uA  
EN=0V  
No design for durability against radiation  
www.rohm.com  
Target spec. ver.1.7  
2/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Electrical characteristic curves (Reference data)  
L:LQM21MPN1R0NG0 (2.0mm×1.6mm×1.0mm Murata)  
COUT:GRM155R60J475M(1.0mm×0.5mm×0.5mm Murata)  
BU90002GWZ3.3V OUTPUT)  
EN  
2V/div  
EN  
2V/div  
VOUT  
2V/div  
VOUT  
1V/div  
20us  
IL  
500mA/div  
100us  
Fig.1 Start up  
Fig.2 Shut down  
Vout  
50mV/div  
ac coupled  
Vout  
50mV/div  
ac coupled  
10us  
4us  
IOUT  
IOUT  
200mA/div  
50mA/div  
Fig.3 Load transient response 5mA to 50mA  
tr=tf=100ns, Mode :Low  
Fig.4 Load transient response 50mA to 350mA  
tr=tf=100ns, Mode :Low  
Vout  
20mV/div  
ac coupled  
Vout  
50mV/div  
ac coupled  
400ns  
4us  
LX  
5V/div  
IOUT  
200mA/div  
IL  
500mA/div  
Fig.5 Load transient response 150mA to 500mA  
tr=tf=100ns, Mode :High  
Fig.6 PFM mode Operation  
Iout=40mA  
www.rohm.com  
Target spec. ver.1.7  
3/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Electrical characteristic curves (Reference data) – Continued  
BU90002GWZ3.3V OUTPUT)  
MODE  
1V/div  
4us  
Vout  
20mV/div  
ac coupled  
80ns  
LX  
5V/div  
Vout  
20mV/div  
ac coupled  
IL  
LX  
500mA/div  
500mA/div  
Fig.7 PFM mode Operation  
Iout=100mA  
Fig.8 Mode Change Response  
MODE High to Low  
100  
4us  
95  
90  
85  
80  
75  
70  
65  
60  
MODE  
2V/div  
Vout  
20mV/div  
ac coupled  
LX  
500mA/div  
1
10  
100  
1000  
Load current[mA]  
Fig.9 Mode Change Response  
MODE Low to High  
Fig.10 Efficiency vs Load current  
VIN=5V PWM/PFM Auto Mode  
3.38  
30  
3.37  
3.36  
3.35  
3.34  
3.33  
3.32  
3.31  
25  
20  
15  
10  
5
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
Load current[mA]  
Load current[mA]  
Fig.11 Load regulation  
VIN=5V PWM/PFM Auto mode  
Fig.12 Vout Ripple Voltage  
VIN=5V PWM/PFM Auto Mode  
www.rohm.com  
Target spec. ver.1.7  
4/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Electrical characteristic curves (Reference data)  
BU90003GWZ(1.2V OUTPUT)  
EN  
2V/div  
EN  
2V/div  
VOUT  
500mV/div  
VOUT  
1V/div  
40us  
100us  
IL  
200mA/div  
Fig.13 Start up  
Fig.14 Shut down  
Vout  
50mV/div  
1.2V offset  
Vout  
50mV/div  
1.2V offset  
10us  
4us  
IOUT  
200mA/div  
IOUT  
200mA/div  
Fig.15 Load transient response 5mA to 200mA  
tr=tf=100ns, Mode :Low  
Fig.16 Load transient response 50mA to 350mA  
tr=tf=100ns, Mode :Low  
Vout  
20mV/div  
4us  
Vout  
ac coupled  
50mV/div  
ac coupled  
400ns  
LX  
2V/div  
IOUT  
500mA/div  
IL  
500mA/div  
Fig.17 Load transient response 400mA to 1000mA  
tr=tf=100ns, Mode :Low  
Fig.18 PFM mode Operation Iout=50mA  
www.rohm.com  
Target spec. ver.1.7  
5/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Electrical characteristic curves (Reference data) – Continued  
BU90003GWZ(1.2V OUTPUT)  
MODE  
2V/div  
Vout  
50mV/div  
2us  
ac coupled  
80ns  
Vout  
50mV/div  
ac coupled  
LX  
2V/div  
LX  
IL  
200mA/div  
500mA/div  
Fig.19 PWM mode Operation Iout=100mA  
Fig.20 Mode Change Response  
MODE High to Low  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
2us  
MODE  
2V/div  
Vout  
50mV/div  
ac coupled  
VIN=2.7V  
VIN=3.6V  
VIN=4.2V  
LX  
200mA/div  
0.1  
1
10  
100  
1000  
Load current[mA]  
Fig.21 Mode Change Response  
MODE Low to High  
Fig.22 Efficiency vs Load current  
VIN=3.6V PWM/PFM Auto Mode  
1.224  
1.212  
1.2  
VIN=2.7V  
VIN=3.6V  
VIN=4.2V  
1.188  
1.176  
1
10  
100  
1000  
Iout[mA]  
Fig.23 Load regulation  
PWM/PFM Auto mode  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
Target spec. ver.1.7  
6/14  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Electrical characteristic curves (Reference data)  
BU90004GWZ(1.80V OUTPUT)  
EN  
5V/div  
EN  
5V/div  
VOUT  
1V/div  
VOUT  
1V/div  
40us  
100us  
IL  
200mA/div  
Fig.25 Shut down  
Fig.24 Start up  
Vout  
Vout  
50mV/div  
ac coupled  
50mV/div  
ac coupled  
4us  
4us  
IOUT  
IOUT  
200mA/div  
200mA/div  
Fig. 26 Load transient response 5mA to 200mA  
tr=tf=100ns, Mode :Low  
Fig.27 Load transient response 50mA to 350mA  
tr=tf=100ns, Mode :Low  
4us  
Vout  
Vout  
50mV/div  
ac coupled  
50mV/div  
ac coupled  
400ns  
LX  
2V/div  
IOUT  
200mA/div  
Fig.28 Load transient response 200mA to 600mA  
tr=tf=100ns, Mode :Low  
Fig.29 PFM mode Operation Iout=50mA  
www.rohm.com  
Target spec. ver.1.7  
7/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Electrical characteristic curves (Reference data) – Continued  
BU90004GWZ(1.80V OUTPUT)  
MODE  
5V/div  
4us  
80ns  
Vout  
20mV/div  
ac couple
Vout  
50mV/div  
ac coupled  
LX  
2V/div  
LX  
200mA/div  
Fig.30 PWM mode Operation Iout=100mA  
Fig.31 Mode Change Response  
MODE High to Low  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
MODE  
5V/div  
2us  
Vout  
50mV/div  
ac coupled  
VIN=2.7V  
VIN=3.6V  
VIN=4.2V  
LX  
200mA/div  
0.1  
1
10  
Load current[mA]  
100  
1000  
Fig.32 Mode Change Response  
MODE Low to High  
Fig.33 Efficiency vs Load current  
VIN=3.6V PWM/PFM Auto Mode  
1.836  
1.818  
1.8  
VIN=3.6V  
VIN=2.7V  
VIN=4.2V  
1.782  
1.764  
0.1  
1
10  
100  
1000  
Load Current[mA]  
Fig.34 Load regulation  
PWM/PFM Auto mode  
www.rohm.com  
© 2011 ROHM Co., Ltd. All rights reserved.  
Target spec. ver.1.7  
8/14  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Block diagram /Application circuit  
L :ꢀPWM/PFM MODE  
H :ꢀPWM MODE  
MODE  
B1  
VIN  
A1  
2.3~5.5V  
PWM/PFM  
control  
TSD  
UVLO  
EN  
FB  
B3  
VOUT  
1.5~0.47uH  
Switching  
Control Logic  
and  
-
+
B2  
VOUT  
4.7uF  
LX  
ERROR COMP  
Gate Driver  
VREF  
EN  
Frequency  
control  
H :ꢀON  
L :ꢀOFF  
SHUTDOWN  
A2  
GND  
A3  
External dimensions  
Pin layout (BOTTOM VIEW)  
B1  
MODE  
B2  
LX  
B3  
FB  
A1  
VIN  
A2  
EN  
A3  
GND  
Pin number/Name/Functions  
Pin No.  
A1  
Name  
VIN  
Function  
Power supply input pin  
Enable pin  
A2  
EN  
A3  
GND  
MODE  
LX  
GND pin  
B1  
Forced PWM mode pin  
Inductor connection pin  
B2  
B3  
FB  
Feedback voltage input pin  
www.rohm.com  
Target spec. ver.1.7  
9/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Functional descriptions  
The BU9000XGWZ are a synchronous step-down DC/DC converter that achieves fast transient response from light load to  
heavy load by hysteretic PWM control system and current constant PFM control system.  
PWM control  
BU9000XGWZ operates by hysteretic PWM control. This scheme ensures fast switching, high efficiency, and fast transient  
response.  
When the output voltage is below the VREF voltage, the error comparator output is low to high and turning on P-channel  
MOSFET until above the VREF voltage and minimum on time.  
PFM control  
At light load the regulator and MODE=low, the regulator operates with reduced switching frequency and improves the efficiency.  
During PFM operation, the output voltage slightly higher than typical output voltage.  
output PWM mode voltage  
PFM (constant current)Threshold. turn off Pch FET  
PFM Threshold. turn on PFET  
PFM Mode at Light Load  
PWM Mode at Moderate to Heavy Loads  
Fig. Operation of PFM mode and PWM mode  
www.rohm.com  
Target spec. ver.1.7  
10/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Description of operations  
1) Shutdown  
If the EN input pin set to low (<0.4V), all circuit are shut down and the regulator is standby mode.  
Do not leave the EN pin floating.  
2) Soft start function  
The regulator has a soft start circuit that reduces in-rush current at start-up. Typical start up times with a 4.7uF output capacitor  
is 120usec.  
3) Current limit  
The BU9000XGWZ has a current limit circuit that protects itself and external components during overload condition.  
4) UVLO  
The BU9000XGWZ has a Under Voltage Lock Out circuit that turn off device when VIN>2.05V(typ.)  
5) FORCED PWM MODE  
Setting MODE pin high (>1.4V) places the regulator in forced PWM.  
6) TSD  
The BU9000XGWZ has a thermal shutdown feature to protect the device if the junction temperature exceeds 150.In thermal  
shutdown, the DRIVER is disabled.  
www.rohm.com  
Target spec. ver.1.7  
11/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
PC Board layout  
The suggested PCB layout for the BU9000XGWZ are shown in Figure. The following guidelines should be used to ensure a  
proper layout.  
1) The input capacitor CIN should be connect as closely possible to VIN pin and GND pin.  
2) From the output voltage to the FB pin line should be as separate as possible.  
3) COUT and L should be connected as closely as possible. The connection of L to the LX pin should be as short as possible.  
Fig. PCB layout  
External parts selection  
1) Inductor selection  
The inductance significantly depends on output ripple current. As shown by following equation, the ripple current decreases as  
the inductor and/or switching frequency increase.  
(VIN-VOUT)×VOUT  
IL=  
L×VIN×f  
f: switching frequency  
L: inductance  
IL: inductor current ripple  
As a minimum requirement, the DC current rating of the inductor should be equal to the maximum load current plus half of the  
inductor current ripple as shown by the following equation.  
IL  
ILPEAK= IOUTMAX +  
2
Recommended inductor selection  
LQM21MPN1R0NG0 (2.0mm×1.6mm×1.0mm Murata) Iout1A  
LQM21PN1R0NGC (2.0mm×1.2mm×1.0mm Murata)  
Iout0.6A  
2)Recommended input capacitor(CIN) selection  
GRM155R60J225M(1.0mm×0.5mm×0.5mm Murata)  
GRM188R60J475ME84(1.6mm×0.8mm×0.8mm Murtata)  
3)Recommended output capacitor(COUT) selection  
GRM155R60J475M(1.0mm×0.5mm×0.5mm Murata)  
GRM155R60G106ME44(1.0mm×0.5mm×0.5mm Murata)  
GRM188R60J475ME84(1.6mm×0.8mm×0.8mm Murtata)  
www.rohm.com  
Target spec. ver.1.7  
12/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Caution of use  
1) Absolute maximum ratings  
An excess in the absolute maximum rating, such as supply voltage, temperature range of operating conditions, etc.,  
can break down the devices, thus making impossible to identify breaking mode, such as a short circuit or an open  
circuit. If any over rated values will expect to exceed the absolute maximum ratings, consider adding circuit protection  
devices, such as fuses.  
2) GND voltage  
The potential of GND pin must be minimum potential in all condition. As an exception, the circuit design allows voltages  
up to -0.3 V to be applied to the IC pin.  
3) Thermal design  
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating  
conditions.  
4) Inter-pin shorts and mounting errors  
Use caution when positioning the IC for mounting on printed circuit boards. The IC may be damaged if there is any  
connection error or if pins are shorted together.  
5) Actions in strong electromagnetic field  
Use caution when using the IC in the presence of a strong electromagnetic field as doing so may cause the IC to  
malfunction.  
6) Mutual impedance  
Power supply and ground wiring should reflect consideration of the need to lower mutual impedance and minimize  
ripple as much as possible (by making wiring as short and thick as possible or rejecting ripple by incorporating  
inductance and capacitance).  
7) Thermal shutdown Circuit (TSD Circuit)  
This model IC has a built-in TSD circuit. This circuit is only to cut off the IC from thermal runaway, and has not been  
design to protect or guarantee the IC. Therefore, the user should not plan to activate this circuit with continued  
operation in mind.  
8) Regarding input pin of the IC  
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them  
isolated.  
P-N junctions are formed at the intersection of these P layers with the N layers of other elements, creating a parasitic  
diode or transistor. For example, as shown in the figures below, the relation between each potential is as follows:  
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.  
When GND > Pin B, the P-N junction operates as a parasitic transistor.  
Parasitic diodes can occur inevitable in the structure of the IC. The operation of parasitic diodes can result in mutual  
interference among circuits, operational faults, or physical damage. Accordingly, methods by which parasitic diodes  
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin, should not be  
used.  
www.rohm.com  
Target spec. ver.1.7  
13/14  
© 2011 ROHM Co., Ltd. All rights reserved.  
BU90002GWZ, BU90003GWZ, BU90004GWZ, BU90005GWZ, BU90006GWZ  
Technical Note  
Ordering part number  
TBD  
www.rohm.com  
Target spec. ver.1.7  
14/14  
© 2011 ROHM Co., Ltd. All rights reserved.  

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