BV1LF080EFJ-C [ROHM]
BV1LF080EFJ-C是车载用1ch低边开关。可通过SR引脚外接电阻调整转换速率。内置OCP、DualTSD和有源钳位功能。可通过诊断功能，进行TSD的诊断。;
| 型号： | BV1LF080EFJ-C |
| 厂家： | 
ROHM |
| 描述： | BV1LF080EFJ-C是车载用1ch低边开关。可通过SR引脚外接电阻调整转换速率。内置OCP、DualTSD和有源钳位功能。可通过诊断功能，进行TSD的诊断。 开关 |
| 文件： | 总36页 (文件大小：1838K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Datasheet
Automotive IPD 1ch Low-Side Switch
with Slew Rate Control and Output
Diagnostic Function
BV1LF080EFJ-C
Features
Key Specifications
(Note 1)
AEC-Q100 Qualified
On-state Resistance (Tj = 25 °C, Typ)
Over Current Limitation Level
(Tj = 25 °C, Typ)
Output Clamp Voltage (Min)
Active Clamp Energy (Tj(START) = 25 °C)
80 mΩ
7.5 A
(Note 2)
Built-in Dual TSD
Built-in Over Current Protection Function (OCP)
Built-in Thermal Shutdown Function (TSD)
Built-in Active Clamp Function
42 V
200 mJ
Built-in Diagnostic Function
Built-in Slew Rate Control Function
Directly Controllable from CMOS logic ICs
On-Resistance RDS(ON) = 80mΩ (Typ)
(VDD = 5 V, IOUT = 1.0 A, Tj = 25 °C)
Monolithic Power Management IC with Control
Unit (CMOS) and Power MOSFET on a Single
Chip
Package
HTSOP-J8
W (Typ) x D (Typ) x H (Max)
4.9 mm x 6.0 mm x 1.0 mm
(Note 1) Grade 1
(Note 2) This IC has thermal shutdown (Junction temperature
detect) and ΔTj Protection (Power-MOS steep temperature rising
detect).
General Description
BV1LF080EFJ-C is a 1ch low-side switch for
automotive application. Output slew rate are
variably controlled by external resistance of the SR
terminal. It has built-in OCP, Dual TSD and Active
Clamp function. It is equipped with output
diagnostic function for TSD
Application
Driving Resistive, Inductive and Capacitive Loads
Block Diagram
VDD
Supply
Unit
OUT
STBY
Active
Clamp
IN
SR
GATE
Control
Dual TSD
OCP
ST
Contorol
ST
GND
〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays.
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BV1LF080EFJ-C
Contents
Features.........................................................................................................................................................................................1
General Description......................................................................................................................................................................1
Key Specifications ........................................................................................................................................................................1
Package .........................................................................................................................................................................................1
Application.....................................................................................................................................................................................1
Block Diagram ..............................................................................................................................................................................1
Contents........................................................................................................................................................................................2
Pin Configuration..........................................................................................................................................................................3
Pin Description..............................................................................................................................................................................3
Definition.......................................................................................................................................................................................3
Absolute Maximum Ratings ........................................................................................................................................................4
Recommended Operating Condition..........................................................................................................................................4
Thermal Resistance......................................................................................................................................................................5
Electrical Characteristics .............................................................................................................................................................9
Typical Performance Curves .....................................................................................................................................................12
Measurement Circuit..................................................................................................................................................................19
Truth Table..................................................................................................................................................................................21
Timing Chart...............................................................................................................................................................................21
Function Description..................................................................................................................................................................23
I/O Equivalent Circuit ................................................................................................................................................................26
Operational Notes ......................................................................................................................................................................27
Ordering Information.................................................................................................................................................................31
Marking Diagram........................................................................................................................................................................31
Physical Dimension and Packing Information.........................................................................................................................32
Revision History..........................................................................................................................................................................33
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BV1LF080EFJ-C
Pin Configuration
HTSOP-J8
(TOP VIEW)
VDD
STBY
IN
1
2
3
8
7
6
GND
GND
GND
OUT
EXP-PAD
ST
4
5
SR
Pin Description
Pin No.
Pin Name
Function
1
2
3
4
5
6
7
8
VDD
STBY
IN
Power supply pin.
Input pin. Pull-down resistor is internally connected
Input pin. Pull-down resistor is internally connected
Self-diagnostic output pin.
Slew rate control pin
ST
SR
GND
GND
GND
Ground pin.
Ground pin.
Ground pin.
Output pin. When output pin is shorted to power supply and the output current is
limited to protect IC.
EXP-PAD
OUT
Definition
VBAT
VDD
VBAT
IDD
RL, ZL
RST
VDD
VDD
GND
VSTBY
VIN
STBY
OUT
SR
VSTBY
VIN
IOUT
IN
VOUT
ST
IST
RSR
VST
VSR
GND
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BV1LF080EFJ-C
Absolute Maximum Ratings (Tj = 25 °C)
Parameters
Symbol
VDD
Rating
-0.3 to +7
-0.3 to +42
-0.3 to VDD + 0.3
-0.3 to +7
-0.3 to +7
5 (internal limit)
-0.3 to +7
10
Unit
V
Power Supply Voltage
VOUT
VSR
V
Output Voltage
Input Voltage
V
VIN
V
VSTBY
IOUT
VST
V
(Note 1)
Output Current
A
Diagnostic Output Voltage
Diagnostic Output Current
V
IST
mA
Active Clamp Energy (Single Pulse)
Tj(START) = 25 °C (Note 2)
EAS(25 °C)
200
80
mJ
Active Clamp Energy (Single Pulse)
EAS(150 °C)
(Note 3)
Tj(START) = 150 °C (Note 2)
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Tj
-40 to +150
-55 to +150
150
°C
°C
°C
Tstg
Tjmax
Caution 1:
Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between
pins or an open circuit between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures,
such as adding a fuse, in case the IC is operated over the absolute maximum ratings.
Caution 2:
Should by any chance the maximum junction temperature rating be exceeded the rise in temperature of the chip may result
in deterioration of the properties of the chip. In case of exceeding this absolute maximum rating, design a PCB with thermal
resistance taken into consideration by increasing board size and copper area so as not to exceed the maximum junction
temperature rating.
(Note 1) Internally limited by over current protection function.
(Note 2) Active clamp energy (Single Pulse), at the condition IOUT(START) = 1.0 A, VBAT = 16 V.
1
푉퐵퐴푇
퐸퐴푆
=
퐿퐼푂푈푇(푆푇퐴푅푇)ꢀ × ꢁ1 −
ꢃ
2
푉퐵퐴푇 − 푉푂푈푇(퐶ꢂ)
(Note 3) Not 100 % tested.
Recommended Operating Condition
Parameters
Power Supply Voltage
Symbol
VDD
Min
3.5
-40
Typ
5.0
Max
6.5
Unit
V
Operating Temperature
Tj
+25
+150
°C
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BV1LF080EFJ-C
(Note 1)
Thermal Resistance
Parameter
Symbol
θJA
Typ
Unit
Condition
BV1LF080EFJ-C
(Note 2)
126.5
37.8
25.3
°C/W
°C/W
°C/W
1s
2s
Between Junction and Surroundings Temperature
Thermal Resistance
(Note 3)
(Note 4)
2s2p
(Note 1) The thermal impedance is based on JESD51-2A (Still-Air) standard. It is used the chip of BV1LF080EFJ-C
(Note 2) JESD51-3 standard FR4 114.3 mm x 76.2 mm x 1.57 mm 1-layer (1s)
(Top copper foil: ROHM recommended Footprint + wiring to measure, 2 oz. copper.)
(Note 3) JESD51-5 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 2-layers (2s)
(Top copper foil: ROHM recommended Footprint + wiring to measure/
Copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm,
copper (top & reverse side) 2 oz.)
(Note 4) JESD51-5/- 7 standard FR4 114.3 mm x 76.2 mm x 1.60 mm 4-layers (2s2p)
(Top copper foil: ROHM recommended Footprint + wiring to measure/
2 inner layers and copper foil area on the reverse side of PCB: 74.2 mm x 74.2 mm,
copper (top & reverse side/inner layers) 2 oz./1 oz.)
PCB Layout 1 Layer (1s)
Footprint
100 mm2
600 mm2
1200 mm2
Dimension
Value
Board Finish Thickness
Board Dimension
1.57 mm ± 10 %
76.2 mm x 114.3 mm
FR4
Board Material
Copper Thickness (Top Layer)
Copper Foil Area Dimension
0.070 mm (Cu:2 oz)
Footprint / 100 mm2 / 600 mm2 / 1200 mm2
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BV1LF080EFJ-C
Thermal Resistance － continued
PCB Layout 2 Layers (2s)
Bottom Layer
Top Layer
Top Layer
Bottom Layer
via
Isolation Clearance Diameter : ≥ 0.6 mm
Cross Section
Dimension
Board Finish Thickness
Board Dimension
Board Material
Value
1.60 mm ± 10 %
76.2 mm x 114.3 mm
FR4
Copper Thickness (Top/Bottom Layers)
Thermal Vias Separation/Diameter
0.070 mm (Cu +Plating)
1.2 mm / 0.3 mm
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BV1LF080EFJ-C
Thermal Resistance － continued
PCB Layout 4 Layers (2s2p)
2nd / Bottom Layers
3rd Layer
Top Layer
Top Layer
2nd Layer
3rd Layer
Bottom Layer
via
Isolation Clearance Diameter : ≥ 0.6 mm
Cross Section
Dimension
Value
Board Finish Thickness
Board Dimension
Board Material
1.60 mm ± 10 %
76.2 mm x 114.3 mm
FR4
Copper Thickness (Top/Bottom Layers)
Thermal Vias Separation/Diameter
0.070 mm (Cu +Plating)
1.2 mm / 0.3 mm
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BV1LF080EFJ-C
Thermal Resistance － continued
Transient Thermal Resistance (Single Pulse)
Thermal Resistance (θJA vs. Copper Foil Area – (1s))
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BV1LF080EFJ-C
Electrical Characteristics
(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V）
Limit
Parameters
Power Supply
Symbol
Unit
Condition
Min
Typ
Max
VDD = 5 V, VSTBY = VIN = 0 V
RSR = 68 kΩ
VDD = VSTBY = VIN = 5 V
RSR = 68 kΩ
IVDD(S)
IVDD
VUVLOR
VUVLOHYS
-
-
-
-
0
10
500
3.0
0.4
μA
μA
V
Standby Current
200
2.5
0.2
Operating Current
VDD Sweep up
Under Voltage Release Voltage
Under Voltage Hysteresis Voltage
Input (STBY)
V
VSTBY(H)
VSTBY(L)
VSTBY(HYS)
ISTBY(H)
3.0
-
-
-
-
V
V
High Level Input Voltage
Low Level Input Voltage
Input hysteresis Voltage
High Level Input Current
Low Level Input Current
Input (IN)
1.5
-
-
0.2
50
0
V
-
150
+1
μA
μA
VSTBY = 5 V
VSTBY = 0 V
ISTBY(L)
-1
High Level Input Voltage
Low Level Input Voltage
Input hysteresis Voltage
High Level Input Current
Low Level Input Current
VINH
VINL
3.0
-
-
-
-
V
V
1.5
-
VINHYS
IINH
-
0.2
50
0
V
-
150
+1
μA
μA
VIN = 5 V
VIN = 0 V
IINL
-1
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BV1LF080EFJ-C
Electrical Characteristics – Continued
(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V)
Limit
Parameters
Power MOS Output
Symbol
Unit
Condition
Min
Typ
Max
VDD = 5 V, IOUT = 1.0 A,
Tj = 25 °C
VDD = 5 V, IOUT = 1.0 A,
Tj = 150 °C
VSTBY = 0 V, VOUT = 18 V,
Tj = 25 °C
VSTBY = 0 V, VOUT = 18 V,
Tj = 150 °C
-
-
80
150
0.0
104
180
0.5
mΩ
mΩ
μA
RDS(ON)
On-state Resistance
Leak Current
-
IOUT(L)
-
1
20
μA
VOUT(CL)
tONDLY1
tOFFDLY1
tF1
42
48
52
V
VIN = 0 V, IOUT = 1 mA
Output Clamp Voltage
Turn-ON Delay Time 1
Turn-OFF Delay Time 1
Fall Time 1
38
60
μs
-
-
95
145
52
μs
VDD = 5 V,
RL = 10 Ω,
RSR = 24 kΩ
VBAT = 12 V
28
40
μs
tR1
28
40
52
μs
Rise Time 1
SRON1
SROFF1
tONDLY2
tOFFDLY2
tF2
0.138
0.138
0.180
0.180
105
266
113
113
0.064
0.064
230
585
249
249
0.029
0.029
0.257
0.257
155
410
V/μs
V/μs
μs
Slew Rate ON 1
Slew Rate OFF 1
Turn-ON Delay Time 2
Turn-OFF Delay Time 2
Fall Time 2
-
-
μs
VDD = 5 V,
RL = 10 Ω,
RSR = 68 kΩ
VBAT = 12 V
μs
78
147
147
tR2
μs
Rise Time 2
78
SRON2
SROFF2
tONDLY3
tOFFDLY3
tF3
V/μs
V/μs
μs
Slew Rate ON 2
Slew Rate OFF 2
Turn-ON Delay Time 3
Turn-OFF Delay Time 3
Fall Time 3
0.049
0.049
-
0.092
0.092
335
904
μs
-
VDD = 5 V,
174
174
0.022
0.022
324
μs
RL = 10 Ω,
RSR = 150 kΩ
VBAT = 12 V
tR3
324
μs
Rise Time 3
SRON3
SROFF3
0.041
0.041
V/μs
V/μs
Slew Rate ON 3
Slew Rate OFF 3
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BV1LF080EFJ-C
Electrical Characteristics – Continued
(Unless otherwise specified, -40 °C ≤ Tj ≤ +150 °C, VDD = 5 V)
Limit
Parameters
Symbol
VSR
Unit
V
Condition
Min
Typ
Max
SR Pin
0.95
1.00
1.05
VDD = VSTBY = 5 V, RSR = 68 kΩ
SR Output Voltage
Diagnostic Output
(Note 1)
VST(L)
IST(L)
tSTDET
tSTREL
-
-
-
-
0.5
1
V
IST = 1 mA
VST = 5 V
ST Low Voltage
-
-
-
-
μA
µs
µs
ST Leak Current
(Note 1)
ST Detection Delay Time
65
10
(Note 1)
ST Release Delay Time
Protection Function
IOUT(LIM)
TTSDD
7.5
175
160
15
10.0
A
Tj = 25 °C
Over Current Limitation Level
Thermal Shutdown
5.0
-
-
-
-
-
-
°C
°C
°C
°C
°C
°C
150
(Note 1)
Detected Temperature
Thermal Shutdown
TTSDR
135
Released Temperature (Note 1)
Thermal Shutdown
TTSDHYS
TDTJD
-
-
-
-
(Note 1)
Hysteresis Temperature
ΔTj Protection Detected
93
(Note 1)
Temperature
ΔTj Protection Released
43
TDTJR
(Note 1)
Temperature
ΔTj Protection Hysteresis
50
TDTJHYS
(Note 1)
Temperature
(Note 1): Not 100 % tested.
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BV1LF080EFJ-C
Typical Performance Curves
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
500
450
400
350
300
250
200
150
100
500
450
400
350
300
250
200
150
100
150
-40
0
40
80
120
3.0
4.0
5.0
6.0
7.0
Junction Temperature:
Tj [°C]
VDD Voltage: VVDD [V]
Figure 1. Operating Current vs VDD Input Voltage
Figure 2. Operating Current vs Junction Temperature
3.0
2.9
3.0
2.9
VUVLO(R)
VSTBY(H)
2.8
2.8
VSTBY(L)
VUVLO(D)
2.7
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
150
-40
0
40
80
120
150
-40
0
40
80
120
Tj [°C]
Junction Temperature:
Tj [°C]
Junction Temperature:
Figure 3. Under Voltage Detection (Release) Voltage
vs Junction Temperature
Figure 4. High Level Input Voltage / Low Level Input
Voltage (STBY) vs Junction Temperature
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BV1LF080EFJ-C
Typical Performance Curves - Continued
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
3.0
150
140
130
120
110
100
90
2.9
VIN(H)
ISTBY(H)
ISTBY(L)
2.8
VIN(L)
2.7
2.6
2.5
2.4
2.3
2.2
2.1
2.0
1.9
1.8
1.7
1.6
1.5
80
70
60
50
40
30
20
10
0
150
-40
0
40
80
120
150
-40
0
40
80
120
Junction Temperature:
Tj [°C]
Tj [°C]
Junction Temperature:
Figure 5. High Level Input Voltage / Low Level Input
Voltage (IN) vs Junction Temperature
Figure 6. High Level Input Current / Low Level Input
Current (STBY) vs Junction Temperature
200
180
160
140
120
100
80
150
140
IIN(H)
IIN(L)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
60
40
20
0
150
-40
0
40
80
120
3
4
5
6
7
Junction Temperature:
Tj [°C]
VDD Input Voltage: VVDD [V]
Figure 7. High Level Input Current / Low Level Input
Current (IN) vs Junction Temperature
Figure 8. On-state Resistance vs Input Voltage
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BV1LF080EFJ-C
Typical Performance Curves - Continued
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
0.5
0.4
0.3
0.2
0.1
0.0
200
180
160
140
120
100
80
VDD = 3.5 V
VDD = 5 V
60
40
20
0
150
-40
0
40
80
120
0
2
4
6
8
10
12
14
16
18
Junction Temperature:
Tj [°C]
Out Voltage: VOUT [V]
Figure 9. On-state Resistance vs Junction Temperature
Figure 10. Leak Current vs OUT Voltage
20
18
16
14
12
10
8
52
51
50
49
48
47
46
45
44
43
42
6
4
2
0
150
-40
0
40
80
120
-40
0
40
80
120
150
Junction Temperature:
Tj [°C]
Tj [°C]
Junction Temperature:
Figure 11. Leak Current vs Junction Temperature
Figure 12. Output Clamp Voltage vs
Junction Temperature
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BV1LF080EFJ-C
Typical Performance Curves - Continued
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
160
140
120
100
80
160
140
120
100
80
60
60
40
40
150
3
4
5
6
7
-40
0
40
80
120
Tj [°C]
Junction Temperature:
VDD Input Voltage: VVDD [V]
Figure 13. Turn-ON Delay Time2 vs VDD Input Voltage
(RSR = 68 kΩ)
Figure 14. Turn-ON Delay Time2 vs Junction
Temperature (RSR = 68 kΩ)
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
0
0
150
-40
0
40
80
120
3
4
5
6
7
Junction Temperature:
Tj [°C]
VDD Input Voltage: VVDD [V]
Figure 15. Turn-OFF Delay Time2 vs VDD Input
Voltage (RSR = 68 kΩ)
Figure 16. Turn-OFF Delay Time2 vs Junction
Temperature (RSR = 68 kΩ)
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BV1LF080EFJ-C
Typical Performance Curves - Continued
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
150
140
130
120
110
100
90
150
140
130
120
110
100
90
80
80
70
70
3
4
5
6
7
-40
0
40
80
120
150
Tj [°C]
Junction Temperature:
VDD Input Voltage: VVDD [V]
Figure 17. Output Fall Time2 vs VDD Input Voltage
(RSR = 68 kΩ)
Figure 18. Output Fall Time2 vs Junction Temperature
(RSR = 68 kΩ)
150
140
130
120
110
100
90
150
140
130
120
110
100
90
80
80
70
70
3
4
5
6
7
-40
0
40
80
120
150
VDD Input Voltage: VVDD [V]
Junction Temperature:
Tj [°C]
Figure 19. Rise Time2 vs VDD Input Voltage
(RSR = 68 kΩ)
Figure 20. Rise Time2 vs Junction Temperature
(RSR = 68 kΩ)
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Typical Performance Curves - Continued
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.10
0.09
0.08
0.07
0.06
0.05
0.04
-40
0
40
80
120
150
3
4
5
6
7
Junction Temperature: Tj[°C]
VDD Input Voltage: VVDD [V]
Figure 21. Slew Rate ON2 vs VDD Input Voltage
(RSR = 68 kΩ)
Figure 22. Slew Rate ON2 vs Junction Temperature
(RSR = 68 kΩ)
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.10
0.09
0.08
0.07
0.06
0.05
0.04
-40
0
40
80
120
150
3
4
5
6
7
Junction Temperature: [°
Tj C]
VDD Input Voltage: VVDD [V]
Figure 23. Slew Rate OFF2 vs VDD Input Voltage
(RSR = 68 kΩ)
Figure 24. Slew Rate OFF2 vs Junction Temperature
(RSR = 68 kΩ)
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Typical Performance Curves - Continued
(Unless otherwise specified, Tj = 25 °C, VDD = 5 V)
10000
1000
100
10
9
Tj(START) = 25 ℃
Tj(START) = 150 ℃
8
7
6
5
10
-40
0
40
80
120
150
0.5
1.0
1.5
2.0
2.5
3.0
Tj [°C]
Junction Temperature:
Output Current (Start): IOUT(START)[A]
Figure 25. Over Current Limit Value
vs Junction Temperature
Figure 26. Active Clamp Energy (Single Pulse)
vs Output Current (Start)
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Measurement Circuit
VDD
VDD
VDD
VDD
RL = 10 Ω
RL = 10 Ω
IN
OUT
IN
OUT
VBAT = 12 V
VIN
= 5 V
VIN
= 5 V
VBAT = 12 V
STBY
SR
STBY
SR
ST
ST
RSR
68 kΩ
=
GND
GND
Measurement Circuit for Figure 1 and Figure 2
Measurement Circuit for Figure 3
VDD
= 5 V
VDD
= 5 V
VDD
VDD
RL = 10 Ω
RL = 10 Ω
IN
OUT
IN
OUT
VBAT = 12 V
VBAT = 12 V
VIN
STBY
SR
STBY
SR
VSTBY
ST
ST
RSR
= 68 kΩ
GND
GND
Measurement Circuit for Figure 4
Measurement Circuit for Figure 5
VDD
VDD
= 5 V
= 5 V
VDD
RL = 10 Ω
VDD
RL = 10 Ω
IN
OUT
IN
OUT
VBAT = 12 V
VBAT = 12 V
VIN
= 0 V
or 5 V
STBY
SR
STBY
SR
VSTBY
= 0V
or 5 V
ST
ST
RSR=
RSR =
68k Ω
GND
GND
68 kΩ
Measurement Circuit for Figure 7
Measurement Circuit for Figure 6
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Measurement Circuit – Continued
VDD
= 5 V
VDD
VDD
VDD
IN
OUT
IN
OUT
VOUT = 18 V
IOUT = 1.0 A
RDS(ON)
= VOUT/IOUT
STBY
SR
STBY
SR
ST
ST
GND
GND
Measurement Circuit for Figure 8 and Figure 9
Measurement Circuit for Figure 10 and Figure 11
VIN = 0 V to 5 V or 5 V to 0 V
VDD = 5 V
VDD
= 5 V
VDD
VDD
IN
OUT
RL = 10 Ω
IN
OUT
IOUT = 1 mA
VBAT = 12 V
Monitor
Monitor
STBY
SR
STBY
SR
ST
ST
GND
RSR
GND
Measurement Circuit for Figure 12
Measurement Circuit for
Figure 13, Figure 14, Figure 15, Figure 16, Figure 17,
Figure 18, Figure 19, Figure 20, Figure 21, Figure 22,
Figure 23 and Figure 24
VDD
= 5 V
VDD
IN
OUT
VOUT ＝ 12 V
STBY
SR
ST
GND
Measurement Circuit for Figure 25
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Truth Table
OUT Output and Diagnostic Output Function
Performs diagnostic test to check for any abnormal conditions and output to the ST pin. Once Thermal
Shutdown is detected, the ST pin is latched Low. ST pin Low latch is released by setting the STBY pin to
Low or set VDD voltage to “Low Voltage Detection (VUVLO-VUVLOHYS)”
Power
Supply
(VDD)
Output State
STBY Pin
Voltage
IN Pin
Voltage
TSD
ΔTj
OCP
Under
OUT Pin
ST Pin
Voltage
Detection
Low
High
High
High
High
High
*
*
*
*
*
*
OFF
OFF
OFF
OFF
OFF
ON
High
High
High
Low
Detected
*
*
*
Undetected
Undetected
Undetected
Undetected
Low
High
High
High
*
*
*
*
Detected
Undetected
Undetected
*
*
Detected
Undetected
High
High
No Limit
Current
Limitation
High
Undetected
High
Undetected
Undetected
Limited
High
Timing Chart
VDD [V]
VDD and VSTBY can be input simultaneously
VUVLOR
VDD
VUVLOHYS
VUVLOD
t
0
VSTBY [V]
VSTBY
VSTBY(H)
VSTBY(L)
t
0
VIN [V]
tSETUP ≥ 100 [µs]
VIN
VIN(H)
VIN(L)
t
0
VOUT [V]
tONDLY [µs]
tOFFDLY [µs]
≈ VBAT
80 %
20 %
VOUT
≈ 0 V
t
0
tF [µs]
( SRON [V/µs ])
tR [µs]
( SROFF [V/µs ])
Figure 27. Definition of Turn-ON TIME, Turn-OFF TIME, Fall TIME (Slew Rate ON), and Rise TIME (Slew Rate OFF)
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Timing Chart ― Continued
V [V]
IN
VIN(H)
VIN
V
IN(L)
0
t
VOUT [V]
VOUT(CL)
VOUT
VBAT
IOUT x RDS(ON)
t
t
0
IOUT [A]
VBAT
ZL + RDS(ON)
IOUT
0
Figure 28. Inductive Load Operation
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Function Description
■
Over Current Protection Function
This IC built-in over current protection function. Following is shown that the timing chart of over current
protection function.
Occurrence of Over Current
Dissolution of Over Current
①
②
VDD
VSTBY
VIN
VOUT
IOUT(LIM)
IOUT
Normal Current
VST
Figure 29. Timing Chart of OCP Function
① When an overcurrent occurs, IOUT is controlled by the overcurrent limit level (IOUT(LIM)) and VOUT rises.
IOUT(LIM) is 7.5 A (Typ). The VST does not change at this time.
② When the overcurrent disappears, the over current limit is released.
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Function Description – Continued
■
Dual TSD Function
This IC has a built-in TSD function and ΔTj protection function. Following is shown that the timing chart of
Dual TSD function.
① ②
① ②
① ②
③ ④③ ④③ ④③
⑤
VDD
VSTBY
VIN
VOUT
TTSDD
TTSDR
TPOWER-MOS
Tj
TAMB
TDTJR
TDTJD
tSTDET
tSTREL
VST
ΔTj Protection
Thermal Shutdown
Figure 30. Timing Chart of Dual TSD Function
① The temperature of Power MOS FET part and the control part in his IC is each TPOWER-MOS, TAMB. When the
temperature difference becomes 93 °C (Typ) or more, the output turns OFF. This temperature defines as ΔTj
Protection Detected Temperature (TDTJD). At This time, the VST does not change.
② When the temperature difference of TPOWER-MOS and TAMB becomes 43 °C (Typ) or less, the output turns
automatically ON. This temperature defines as ΔTj Protection Released Temperature (TDTJR).
③ The output is turned off when the temperature of the IC reaches Thermal Shutdown Detected Temperature
(TTSDD) = 175 °C (Typ) or more. At this time, the VST latches Low.
④ The output returns to its normal state when the temperature of the IC becomes Thermal Shutdown Released
Temperature (TTSDR) = 160 °C (Typ) or less. VST keeps latching Low.
⑤ the VST become High after tSTREL when the VSTBY become Low.
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Function Description ― Continued
Slew rate control function
This IC can variably adjust the rise time (Slew Rate ON) and fall time (Slew Rate OFF) of OUT output voltage
by setting the SR pin external resistor (RSR).
The approximate expression when VBAT = 12V is as follows.
(
)
1.636 × ꢄ푆푅
⁄
Rise time: 푡푅 =
+ 3.73 [µs]
1000
(
)
1.636 × ꢄ푆푅
⁄
Fall time: 푡퐹 =
+ 3.73 [µs]
1000
(푉퐵퐴푇 × 0.8 − 푉퐵퐴푇 × 0.2)
⁄
Slew Rate ON: ꢅꢄ푂푁
=
[V / µs]
[V / µs]
푡퐹
(푉퐵퐴푇 × 0.8 − 푉퐵퐴푇 × 0.2)
⁄
Slew Rate OFF: ꢅꢄ푂퐹퐹
=
푡푅
RSR recommended range: 24 kΩ to 150 kΩ
(Calculation example)
(
)
1.636 × 150푘
⁄
Rise time 3: 푡푅ꢆ
=
+ 3.73 = 249 [µs]
1000
(12 × 0.8 − 12 × 0.2)
⁄
Slew Rate OFF 3: ꢅꢄ푂퐹퐹ꢆ
=
= 0.029 [V / µs]
249
400
350
300
250
200
150
100
50
VBAT = 12V
Max
Typ
Min
0
0
50
100
150
SR Resistor: RSR [kΩ]
Figure 31. Output rise (fall) time vs The SR pin resistance
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BV1LF080EFJ-C
I/O Equivalent Circuit
VDD
ST
100 Ω
ST
VDD
100 Ω
IN
SR
IN
39 kΩ
46 kΩ
SR
15 kΩ
STBY
OUT
STBY
41 kΩ
47 kΩ
12 kΩ
OUT
Resistor values in the figure are typical values.
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Operational Notes
1. Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse
polarity when connecting the power supply, such as mounting an external diode between the power supply
and the IC’s power supply pins.
2. Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Furthermore, connect a capacitor to
ground at all power supply pins. Consider the effect of temperature and aging on the capacitance value
when using electrolytic capacitors.
3. Ground Voltage
Except for pins the output and the input of which were designed to go below ground, ensure that no pins
are at a voltage below that of the ground pin at any time, even during transient condition.
4. Ground Wiring Pattern
When using both small-signal and large-current ground traces, the two ground traces should be routed
separately but connected to a single ground at the reference point of the application board to avoid
fluctuations in the small-signal ground caused by large currents. Also ensure that the ground traces of
external components do not cause variations on the ground voltage. The ground lines must be as short and
thick as possible to reduce line impedance.
5. Recommended Operating Conditions
The function and operation of the IC are guaranteed within the range specified by the recommended
operating conditions. The characteristic values are guaranteed only under the conditions of each item
specified by the electrical characteristics.
6. Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush
current may flow instantaneously due to the internal powering sequence and delays, especially if the IC
has more than one power supply. Therefore, give special consideration to power coupling capacitance,
power wiring, width of ground wiring, and routing of connections.
7. Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin
may subject the IC to stress. Always discharge capacitors completely after each process or step. The IC’s
power supply should always be turned off completely before connecting or removing it from the test setup
during the inspection process. To prevent damage from static discharge, ground the IC during assembly
and use similar precautions during transport and storage.
8. Inter-pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting
may result in damaging the IC. Avoid nearby pins being shorted to each other especially to ground, power
supply and output pin. Inter-pin shorts could be due to many reasons such as metal particles, water droplets
(in very humid environment) and unintentional solder bridge deposited in between pins during assembly to
name a few.
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Operational Notes ― Continued
9. Ceramic Capacitor
When using a ceramic capacitor, determine a capacitance value considering the change of capacitance with
temperature and the decrease in nominal capacitance due to DC bias and others.
10. Thermal Shutdown Function (TSD)
This IC has a built-in thermal shutdown function that prevents heat damage to the IC. Normal operation
should always be within the IC’s maximum junction temperature rating. If however the rating is exceeded
for a continued period, the junction temperature (Tj) will rise which will activate the TSD function that will
turn OFF power output pins. When the Tj falls below the TSD threshold, the circuits are automatically
restored to normal operation.
Note that the TSD function operates in a situation that exceeds the absolute maximum ratings and therefore,
under no circumstances, should the TSD function be used in a set design or for any purpose other than
protecting the IC from heat damage.
11. Over Current Protection Function (OCP)
This IC incorporates an integrated overcurrent protection function that is activated when the load is shorted.
This protection function is effective in preventing damage due to sudden and unexpected incidents. However,
the IC should not be used in applications characterized by continuous operation or transitioning of the
protection function.
12. Active Clamp Operation
The IC integrates the active clamp function to internally absorb the reverse energy EL which is generated
when the inductive load is turned off. When the active clamp operates, the thermal shutdown function does
not work. Decide a load so that the reverse energy EL is active clamp tolerance EAS (refer to Figure 26.
Active Clamp Energy (Single Pulse) vs Output Current (Start)) or under when inductive load is used.
13. Negative Current of Output
When the OUT pin (DRAIN) becomes lower than the GND pin (SOURCE) voltage, a current flow from power
supply pin (VDD) and the input pins (the STBY pin and the IN pin) to the OUT pin through a parasitic
transistor. When the power supply pin is high, as shown in Figure 32, when the input pins are high, as
shown in Figure 33, a current flow from the power supply pin and the input pins of connected parts (LDO,
MCU, etc.) to the OUT pin. When the power supply pin is low, as shown in Figure 34, and when the input
pins are low, as shown in Figure 35, a current flow from the power supply pin and the GND of parts (LDO,
MCU, etc.) that connected to the input pins to the OUT pin.
Therefore, set the OUT pin (DRAIN) is -0.3 V or higher. When the OUT pin becomes lower than -0.3 V, add
a restriction resistance 82 Ω or higher to the VDD pin, a restriction resistance 1k Ω or higher to the STBY
pin and a restriction resistance 1k Ω or higher to the IN pin. However, set the value of restriction resistance
in consideration of the voltage descent caused by power supply pin and input pins currents.
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13. Negative Current of Output ― Continued
LDO, and so on
GND
(SOURCE)
Power supply pin
Restriction
resistance
N+
N+
N+
N+
N+
P+
P-
P-
Parasitic Element
N-epi
N+sub
OUT
(DRAIN)
Figure 32. Negative Current Path (when the power supply pin is High)
MCU, and so on
GND
(SOURCE)
Restriction
resistance
Input pin
N+
N+
N+
N+
N+
P+
P-
P-
Parasitic Element
N-epi
N+sub
OUT
(DRAIN)
Figure 33. Negative Current Path (when the input pins are High)
LDO, and so on
GND
(SOURCE)
Restriction
resistance
Power supply pin
N+
N+
N+
N+
N+
P+
P-
P-
Parasitic Element
N-epi
N+sub
OUT
(DRAIN)
Figure 34. Negative Current Path (when the power supply pin is Low)
MCU, and so on
GND
(SOURCE)
Input pin
Restriction
resistance
N+
N+
N+
N+
N+
P+
P-
P-
Parasitic Element
N-epi
N+sub
OUT
(DRAIN)
Figure 35. Negative Current Path (when the input pins are Low)
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Operational Notes ― Continued
14. Power Supply Steep Fluctuation
If the voltage of the power supply pin (VDD) falls sharply, the output pin (OUT) may temporarily turn off as
shown in Figure 36. If the power supply pin is expected to fall sharply, take measures such as inserting a
capacitor between the power supply pin and the ground pin so that it falls within the recommended usage
range shown in Figure 37.
2.5
VDD[V]
2.0
Deprecated use range
VDD(FALL)
VDD
1.5
1.0
0.5
0.0
tVDD(FALL)
0
t
VOUT[V]
Recommended use range
≈ VBAT
VOUT
≈ 0 V
0
t
0
10
20
30
tVDD(FALL) [μs]
Figure 36. Output OFF Operation when Power
Supply Fluctuates Sharply
Figure 37. Recommended Use Range
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Ordering Information
B V 1 L F 0 8 0 E F J
C E 2
Package
Product Grade
EFJ: HTSOP-J8
C: For Automotive
Packaging and Forming Specification
E2: Embossed Tape and Reel
Marking Diagram
HTSOP-J8 (TOP VIEW)
Part Number Marking
V 1 L F 8 0
LOT Number
Pin 1 Mark
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Physical Dimension and Packing Information
Package Name
HTSOP-J8
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Revision History
Date
Revision
Changes
24.Jun.2020
001
002
New release
28.Oct.2020
Page 25. Updated slew rate control function formula.
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Notice
Precaution on using ROHM Products
(Note 1)
1. If you intend to use our Products in devices requiring extremely high reliability (such as medical equipment
,
aircraft/spacecraft, nuclear power controllers, etc.) and whose malfunction or failure may cause loss of human life,
bodily injury or serious damage to property (“Specific Applications”), please consult with the ROHM sales
representative in advance. Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any
ROHM’s Products for Specific Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅣ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are not designed under any special or extraordinary environments or conditions, as exemplified below.
Accordingly, ROHM shall not be in any way responsible or liable for any damages, expenses or losses arising from the
use of any ROHM’s Products under any special or extraordinary environments or conditions. If you intend to use our
Products under any special or extraordinary environments or conditions (as exemplified below), your independent
verification and confirmation of product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (Exclude cases where no-clean type fluxes is used.
However, recommend sufficiently about the residue.); or Washing our Products by using water or water-soluble
cleaning agents for cleaning residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse, is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation depending on ambient temperature. When used in sealed area, confirm that it is the use in
the range that does not exceed the maximum junction temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must
be used on a through hole mount products. If the flow soldering method is preferred on a surface-mount products,
please consult with the ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
A two-dimensional barcode printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since concerned goods might be fallen under listed items of export control prescribed by Foreign exchange and Foreign
trade act, please consult with ROHM in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data.
2. ROHM shall not have any obligations where the claims, actions or demands arising from the combination of the
Products with other articles such as components, circuits, systems or external equipment (including software).
3. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the Products or the information contained in this document. Provided, however, that ROHM
will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to
manufacture or sell products containing the Products, subject to the terms and conditions herein.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice-PAA-E
Rev.004
© 2015 ROHM Co., Ltd. All rights reserved.
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General Precaution
1. Before you use our Products, you are requested to carefully read this document and fully understand its contents.
ROHM shall not be in any way responsible or liable for failure, malfunction or accident arising from the use of any
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this document is current as of the issuing date and subject to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the latest information with a ROHM sales
representative.
3. The information contained in this document is provided on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate and/or error-free. ROHM shall not be in any way responsible or
liable for any damages, expenses or losses incurred by you or third parties resulting from inaccuracy or errors of or
concerning such information.
Notice – WE
Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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