DAN217FH [ROHM]
Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, SMD3, SC-59, 3 PIN;
| 型号： | DAN217FH |
| 厂家： | 
ROHM |
| 描述： | Rectifier Diode, 2 Element, 0.1A, 80V V(RRM), Silicon, SMD3, SC-59, 3 PIN 光电二极管 |
| 文件： | 总3页 (文件大小：801K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
AEC-Q101 Qualified
Switching Diode
DAN217FH
Applications
Dimensions (Unit : mm)
Land size figure (Unit : mm)
1.9
Ultra high speed switching
2.9±0.2
各リードとも
＋0.1 Each lead has same dimension
0.4
0.95
ꢀ－0.05
＋0.1
－0.06
0.15
Features
(3)
1) Small mold type. (SMD3)
2) High reliability.
0.8MIN.
0～0.1
SMD3
(2)
(1)
0.8±0.1
0.95
0.95
1.9±0.2
1.1±0.2
0.01
Construction
Structure
Silicon epitaxial planar
ROHM : SMD3
JEDEC :S0T-346
JEITA : SC-59
weekcode
Taping specifications (Unit : mm)
φ1.5±0.1
0
2.0±0.05
4.0±0.1
0.3±0.1
ꢀꢀꢀꢀꢀ
φ1.05MIN
4.0±0.1
3.2±0.1
1.35±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Limits
Symbol
VRM
VR
Unit
Reverse voltage (repetitive peak)
Reverse voltage (DC)
80
80
V
V
Forward current (Single)
Average rectified forward current (Single)
Surge current (t=1us)
Power dissipation
IFM
300
100
4
mA
mA
A
Io
Isurge
Pd
200
150
mW
°C
°C
Junction temperature
Tj
Storage temperature
55 to 150
Tstg
Electrical characteristics (Ta=25°C)
Parameter
Forward voltage
Conditions
Symbol
Min.
Typ.
Max.
1.2
0.1
3.5
4
Unit
V
VF
IR
IF=100mA
-
-
-
-
-
-
-
-
Reverse current
VR=70V
μA
pF
ns
Capacitance between terminals
Reverse recovery time
VR=6V , f=1MHz
VR=6V , IF=5mA , RL=50Ω
Ct
trr
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.06 - Rev.B
1/2
Data Sheet
DAN217FH
ꢀ
Ta=150℃
Ta=125℃
10
100
10000
1000
100
10
Ta=75℃
Ta=125℃
f=1MHz
Ta=75℃
Ta=25℃
Ta=25℃
10
1
Ta=150℃
1
Ta=-25℃
Ta=-25℃
1
0.1
0.01
0.1
0.1
0
10 20 30 40 50 60 70 80
0
5
10
15
20
0
100 200 300 400 500 600 700 800 900 100
0
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
100
90
80
70
60
50
40
30
20
10
0
950
940
930
920
910
900
Ta=25℃
Ta=25℃
VR=80V
n=10pcs
Ta=25℃
IF=100mA
n=30pcs
VR=6V
f=1MHz
n=10pcs
AVE:1.17pF
AVE:9.655nA
AVE:921.7mV
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
15
10
5
10
9
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Ta=25℃
VR=6V
IF=5mA
RL=50Ω
n=10pcs
1cyc
Ifsm
Ifsm
8.3ms 8.3ms
1cyc
8.3ms
AVE:1.93ns
AVE:3.50A
0
1
10
100
IFSM DISRESION MAP
trr DISPERSION MAP
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
10
9
8
7
6
5
4
3
2
1
0
100
10
1
1000
100
10
Ifsm
t
Mounted on epoxy board
AVE:2.54kV
AVE:0.97kV
IM=100mA IF=10A
time
1ms
300us
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
1
0.001 0.01
0.1
1
10
100
0.1
1
10
100 1000
TIME:t(ms)
IFSM-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.06 - Rev.B
Notice
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© 2011 ROHM Co., Ltd. All rights reserved.
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