DTA014YUB [ROHM]
100mA/-50V Digital transistors(with built-in resistors); 百毫安/ -50V数字晶体管（具有内置电阻）
| 型号： | DTA014YUB |
| 厂家： | 
ROHM |
| 描述： | 100mA/-50V Digital transistors(with built-in resistors) |
| 文件： | 总3页 (文件大小：985K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Data Sheet
-100mA/-50V Digital transistors(with built-in resistors)
DTA014YM / DTA014YEB / DTA014YUB
Features
Dimensions (Unit : mm)
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See Equivalent circuit)
VMT3
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
Abbreviated symbol : 34
EMT3F
3) Only the on/off conditions need to be set for operation,
making the device design easy.
(3)
(1)
(2)
Structure
Abbreviated symbol : 34
PNP epitaxial planar silicon transistor
(Resistor built-in type)
UMT3F
2.0
0.9
0.32
(3)
Applications
(1)
(2)
0.13
0.65 0.65
1.3
Inverter, Interface, Driver
Abbreviated symbol : 34
Packaging specifications
Equivalent circuit
Package
VMT3
Taping
T2L
EMT3F
Taping
TL
UMT3F
Taping
TL
O
UT
R
Packaging Type
Code
IN
Type
R2
R
Basic ordering
unit (pieces)
G((+)
GND
8000
3000
3000
IN
OUT
O
DTA014YM
DTA014YEB
DTA014YUB
-
○
-
-
-
○
-
GND(+)
-
○
R1=10kΩ,R2=47kΩ
Absolute maximum (Ta=25C)
Limits(DTA014Y□)
Parameter
Symbol
VCC
Unit
M
EB
-50
-40
6
UB
Supply voltage
Input voltage
V
V
VIN
V
IC(max)
IO
Collector current *1
-100
-70
mA
mA
mW
C
C
Output current
PD
Power dissipation *2
150
200
Junction temperature
Tj
150
Range of storage temperature
*1ꢀCharacteristics of built-in transistor
*2 Each terminal mounted on a reference land
Tstg
-55 to +150
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2011.09 - Rev.A
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
Data Sheet
DTA014YM / DTA014YEB / DTA014YUB ꢀ
Electrical characteristics (Ta=25C)
Parameter
Min.
Typ.
Test Conditions
Symbol
VI(off)
VI(on)
VO(on)
II
Max.
-0.5
-
Unit
V
V
CC=-5V / IO=-100uA
-
-1.7
-
-
Input voltage
VO=-0.3V / IO=-5mA
IO=-5mA / II=0.5mA
VI=-5V
-
V
Output voltage
Input current
-0.07
-0.15
-0.88
-500
-
V
-
-
-
-
mA
nA
-
V
CC=-50V / VI=0V
VO=-10V / IO=-5mA
CE=-10V /IE=5mA
f=100MHz
Output current
DC current gain
IO(off)
GI
-
80
V
Transition frequency *
fT
-
250
-
MHz
Input resistance
R1
7
10
13
kΩ
Resistance ratio
3.7
4.7
R2/R1
5.7
-
* Characteristics of built-in transistor
Electrical characteristics curves
-10
-1
-100
VCC=-5V
VO=-0.3V
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
-10
-1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
-0.1
-0.01
-0.001
-0.1
0
-0.5
-1
-1.5
-2
-2.5
-3
-0.1
-1
-10
-100
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (mA)
Fig.1 Input Voltage vs. Output Current
(ON characteristics)
Fig.2 Input Voltage vs. Output Current
(OFF characteristics)
-1
1000
Ta=125ºC
IO/II=10
VO=-10V
Ta=75ºC
Ta=25ºC
Ta=-40ºC
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
-0.1
100
10
1
-0.01
-0.001
-0.1
-1
-10
-100
-0.1
-1
-10
-100
OUTPUT CURRNET : IO (mA)
OUTPUT CURRENT : IO (mA)
Fig.3 DC Current Gain vs. Output Current
Fig.4 Output Voltage vs. Output Current
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.09 - Rev.A
Notice
N o t e s
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
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