DTA123EM [ROHM]

Digital transistors (built-in resistors); 数字晶体管(内置电阻)
DTA123EM
型号: DTA123EM
厂家: ROHM    ROHM
描述:

Digital transistors (built-in resistors)
数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总5页 (文件大小:91K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTA123EM / DTA123EE / DTA123EUA  
DTA123EKA / DTA123ESA  
Transistors  
Digital transistors (built-in resistors)  
DTA123EM / DTA123EE / DTA123EUA /  
DTA123EKA / DTA123ESA  
!Equivalent circuit  
!Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
OUT  
R1  
IN  
R2  
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
GND(+)  
OUT  
IN  
3) Only the on/off conditions need to be set for operation,  
making device design easy.  
GND(+)  
!External dimensions (Units : mm)  
1.6 0.2  
1.0 0.1  
DTA123EM  
1.2  
DTA123EE  
0.2 0.8 0.2  
0.7 0.1  
0.55 0.1  
0.50.5  
+0.1  
+0.1  
0.2  
0.05  
0.2  
( )  
2
0.05  
(3)  
( )  
1
(1) (2)  
0~0.1  
(3)  
0.15Max.  
(1) IN  
(2) GND  
(3) OUT  
(1) GND  
(2) IN  
(3) OUT  
+0.1  
0.3  
0.05  
0.15 0.05  
ROHM : VMT3  
DTA123EUA  
ROHM : EMT3  
DTA123EKA  
Abbreviated symbol : 12  
Abbreviated symbol : 12  
2.9 0.2  
2.0 0.2  
+0.2  
1.1  
0.9 0.1  
0.7 0.1  
0.1  
1.3 0.1  
1.9 0.2  
0.8 0.1  
0.65 0.65  
0.95 0.95  
0.2  
(1)  
(2)  
(2)  
(1)  
0~0.1  
0~0.1  
(3)  
(3)  
(1) GND  
(2) IN  
(3) OUT  
+0.1  
0  
0.3  
(1) GND  
(2) IN  
(3) OUT  
0.15 0.05  
+0.1  
0.15  
0.06  
+0.1  
ROHM : UMT3  
EIAJ : SC-70  
All terminals have same dimensions  
0.4  
0.05  
ROHM : SMT3  
EIAJ : SC-59  
Abbreviated symbol : 12  
All terminals have same dimensions  
Abbreviated symbol : 12  
4
0.2  
2 0.2  
DTA123ESA  
+0.15  
0.05  
0.45  
+0.15  
+0.4  
0.45  
2.5  
0.5  
0.05  
0.1  
5
(1) GND  
(2) OUT  
(3) IN  
ROHM : SPT  
EIAJ : SC-72  
(1) (2) (3)  
DTA123EM / DTA123EE / DTA123EUA  
DTA123EKA / DTA123ESA  
Transistors  
!Absolute maximum ratings (Ta=25°C)  
Limits(DTA123E  
)
Parameter  
Symbol  
Unit  
M
E
UA  
50  
KA  
SA  
Supply voltage  
Input voltage  
VCC  
V
V
VIN  
12~+10  
100  
I
O
Output current  
mA  
I
C(Max.)  
Pd  
100  
Power dissipation  
150  
200  
300  
mW  
°C  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
55~+150  
°C  
!Electrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
0.5  
Unit  
Conditions  
=−100µA  
=−20mA  
=−10mA/0.5mA  
=−5V  
CC=−50V, V  
V
I(off)  
I(on)  
3  
V
CC=−5V, I  
=−0.3V, I  
/I  
O
Input voltage  
V
V
V
O
O
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
3.8  
0.5  
V
mA  
µA  
I
O
I
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I
=0V  
G
I
20  
1.54  
0.8  
O
=−5V, I  
O
=−20mA  
R1  
2.2  
1
2.86  
1.2  
kΩ  
R
2/R  
1
Transition frequency  
f
T
250  
MHz  
VCE=−10V, I  
E=5mA, f=100MHz  
Transition frequency of the device  
!Packaging specifications  
Package  
VMT3  
Taping  
T2L  
EMT3  
UMT3  
Taping  
T106  
SMT3  
Taping  
T146  
SPT  
Taping  
TP  
Packaging type  
Code  
Taping  
TL  
Basic ordering  
unit (pieces)  
8000  
3000  
3000  
3000  
5000  
Type  
DTA123EM  
DTA123EE  
DTA123EUA  
DTA123EKA  
DTA123ESA  
DTA123EM / DTA123EE / DTA123EUA  
DTA123EKA / DTA123ESA  
Transistors  
!Electrical characteristic curves  
10m  
100  
1k  
V
O
=−0.3V  
VCC=−5V  
VO  
=−5V  
5m  
50  
500  
2m  
1m  
500µ  
20  
10  
200  
100  
50  
Ta=100°C  
25°C  
40°C  
Ta=−40°C  
25°C  
100°C  
200µ  
100µ  
5
2
Ta=100°C  
25°C  
40°C  
20  
10  
5
50µ  
1
20µ  
10µ  
500m  
5µ  
200m  
100m  
2
1
2
µ
100µ −200µ  
500µ −1m 2m  
5m 10m 20m  
50m 100m  
µ0  
1
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
100µ −200µ  
500µ −1m 2m  
5m 10m 20m  
50m 100m  
OUTPUT CURRENT : I  
O
(A)  
INPUT VOLTAGE : VI(off) (V)  
OUTPUT CURRENT : I (A)  
O
Fig.1 Input voltage vs. output current  
(ON characteristics)  
Fig.2 Output current vs. input voltage  
(OFF characteristics)  
Fig.3 DC current gain vs. output  
current  
1
IO/II=20  
500m  
200m  
100m  
Ta=100°C  
25°C  
50m  
40°C  
20m  
10m  
5m  
2m  
1m  
100µ −200µ −500µ  
1m 2m  
5m 10m 20m  
50m 100m  
OUTPUT CURRENT : I (A)  
O
Fig.4 Output voltage vs. output  
current  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document use silicon as a basic material.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.0  
WWW.ALLDATASHEET.COM  
Copyright © Each Manufacturing Company.  
All Datasheets cannot be modified without permission.  
This datasheet has been download from :  
www.AllDataSheet.com  
100% Free DataSheet Search Site.  
Free Download.  
No Register.  
Fast Search System.  
www.AllDataSheet.com  

相关型号:

DTA123EM3

Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
ONSEMI

DTA123EM3T5G

Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
ONSEMI

DTA123EMFHA

车载数字晶体管与通用品共用数据表。下订单时,请注意下列型号命名方式,编写为车载型号。
ROHM

DTA123EMFHAT2L

Small Signal Bipolar Transistor,
ROHM

DTA123EN

TRANSISTOR | TO-92
ETC

DTA123ES

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | TO-92VAR
ETC

DTA123ESA

Digital transistors (built-in resistors)
ROHM

DTA123ESTP

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon, SPT, 3 PIN
ROHM

DTA123EU

TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-23VAR
ETC

DTA123EU3

本产品是电阻内置型晶体管。由于内置了偏压用电阻,因此输入侧无需外接电阻即可构成逆变电路。
ROHM

DTA123EU3HZG

本产品是电阻内置型晶体管。由于内置了偏压用电阻,因此输入侧无需外接电阻即可构成逆变电路。是符合AEC-Q101标准的高可靠性车载品。
ROHM

DTA123EU3HZGT106

Small Signal Bipolar Transistor,
ROHM