DTA124GKAT146 [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN;型号: | DTA124GKAT146 |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN 开关 光电二极管 晶体管 |
文件: | 总5页 (文件大小:847K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DTA124GKA
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
llOutline
Parameter
Value
-50V
SMT3
ꢀ
V
CEO
I
-100mA
C
ꢀ
ꢀ
R
22kΩ
ꢀ
SOT-346(SC-59)
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llFeatures
1) Built-In Biasing Resistor
llInner circuit
2) Built-in bias resistors enable the configuration of
ꢀan inverter circuit without connecting external
ꢀinput resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
ꢀwith complete isolation to allow negative biasing
ꢀof the input. They also have the advantage of
ꢀcompletely eliminating parasitic effects.
4) Complementary NPN Types: DTC124G series
5) Lead Free/RoHS Compliant.
B: BASE
C: COLLECTOR
E: EMITTER
llApplication
Switching circuit, Ierter circuit, Intee circuit,
Driver circuit
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llacg specifications
Basic
Package
size
Taping
Reel size Tape width
Part No.
Package
SMT3
ordering
Marking
K15
code
(mm)
(mm)
unit.(pcs)
DTA124GKA
2928
T146
180
8
3000
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
1/4
20121023 - Rev.001
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DTA124GKA
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Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
-50
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
V
-50
V
-5
V
mA
Collector current
-100
*1
PD
Power dissipation
200
mW/Total
℃
Tj
Junction temperature
Range of storage temperature
150
Tstg
-o +150
℃
llElectrical characteristics (Ta = 25°C)
alues
Parameter
Symbol
Conons
Unit
n.
-50
Typ.
Max.
-
Collector-base breakdown
voltage
BVCBO
BVC
I 50μA
-
V
V
C
Collector-emitter breakdown
voltage
= -1mA
-50
-
-
C
BO
ICBO
I = -
Emitter-base breakdown voltage
Collector cut-off current
-5
-
-
-
-
V
μA
μA
V
E
V
CB
= -50V
-0.5
-260
-0.3
-
IEBO
V = -4V
Emitter cut-off current
-140
-
-
Collector-emitter sn voltage
VCt) I / I = -10mA / -0.5mA
-
C
B
R
V
CE
= -5V, I =-5mA
DC current gain
56
15.4
-
-
C
Emitter-base resistance
-
22
28.6
kΩ
V
= -10V, I = 5mA,
E
CE
*2
fT
Trsition frequency
-
250
-
MHz
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
2/4
20121023 - Rev.001
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DTA124GKA
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Datasheet
llElectrical characteristic curves (T =25°C)
a
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Crrent
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
3/4
20121023 - Rev.001
DTA124GKA
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
4/4
20121023 - Rev.001
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