DTA124GKAT146 [ROHM]

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN;
DTA124GKAT146
型号: DTA124GKAT146
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, SC-59, 3 PIN

开关 光电二极管 晶体管
文件: 总5页 (文件大小:847K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTA124GKA  
PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)  
Datasheet  
llOutline  
Parameter  
Value  
-50V  
SMT3  
V
CEO  
I
-100mA  
C
R
22kΩ  
SOT-346(SC-59)  
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ꢀ ꢀ ꢀ  
llFeatures  
1) Built-In Biasing Resistor  
llInner circuit  
2) Built-in bias resistors enable the configuration of  
an inverter circuit without connecting external  
input resistors (see inner circuit) .  
3) The bias resistors consist of thin-film resistors  
with complete isolation to allow negative biasing  
of the input. They also have the advantage of  
completely eliminating parasitic effects.  
4) Complementary NPN Types: DTC124G series  
5) Lead Free/RoHS Compliant.  
B: BASE  
C: COLLECTOR  
E: EMITTER  
llApplication  
Switching circuit, Ierter circuit, Intee circuit,  
Driver circuit  
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llacg specifications  
Basic  
Package  
size  
Taping  
Reel size Tape width  
Part No.  
Package  
SMT3  
ordering  
Marking  
K15  
code  
(mm)  
(mm)  
unit.(pcs)  
DTA124GKA  
2928  
T146  
180  
8
3000  
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www.rohm.com  
© 2012 ROHMCo., Ltd. All rights reserved.  
1/4  
20121023 - Rev.001  
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DTA124GKA  
ꢀ ꢀ ꢀ ꢀ  
Datasheet  
llAbsolute maximum ratings (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Values  
-50  
Unit  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V
-50  
V
-5  
V
mA  
Collector current  
-100  
*1  
PD  
Power dissipation  
200  
mW/Total  
Tj  
Junction temperature  
Range of storage temperature  
150  
Tstg  
-o +150  
llElectrical characteristics (Ta = 25°C)  
alues  
Parameter  
Symbol  
Conons  
Unit  
n.  
-50  
Typ.  
Max.  
-
Collector-base breakdown  
voltage  
BVCBO  
BVC
I 50μA  
-
V
V
C
Collector-emitter breakdown  
voltage  
= -1mA  
-50  
-
-
C
BO  
ICBO  
I = -
Emitter-base breakdown voltage  
Collector cut-off current  
-5  
-
-
-
-
V
μA  
μA  
V
E
V
CB  
= -50V  
-0.5  
-260  
-0.3  
-
IEBO  
V = -4V  
Emitter cut-off current  
-140  
-
-
Collector-emitter sn voltage  
VCt) I / I = -10mA / -0.5mA  
-
C
B
R
V
CE  
= -5V, I =-5mA  
DC current gain  
56  
15.4  
-
-
C
Emitter-base resistance  
-
22  
28.6  
kΩ  
V
= -10V, I = 5mA,  
E
CE  
*2  
fT  
Trsition frequency  
-
250  
-
MHz  
f = 100MHz  
*1 Each terminal mounted on a reference footprint  
*2 Characteristics of built-in transistor  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀꢀ ꢀ ꢀ ꢀ  
ꢀꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2012 ROHMCo., Ltd. All rights reserved.  
2/4  
20121023 - Rev.001  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
DTA124GKA  
ꢀ ꢀ ꢀ ꢀ ꢀ  
Datasheet  
llElectrical characteristic curves (T =25°C)  
a
Fig.1 Grounded emitter propagation characteristics  
Fig.2 Grounded emitter output characteristics  
Fig.3 DC Current gain vs. Collector Crrent  
Fig.4 Collector-emitter saturation voltage vs.  
Collector Current  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2012 ROHMCo., Ltd. All rights reserved.  
3/4  
20121023 - Rev.001  
DTA124GKA  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Datasheet  
llDimensions  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
www.rohm.com  
© 2012 ROHMCo., Ltd. All rights reserved.  
4/4  
20121023 - Rev.001  

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