DTA125TSA [ROHM]
Digital transistor (built-in resistor); 数字晶体管（内置电阻）
| 型号： | DTA125TSA |
| 厂家： | 
ROHM |
| 描述： | Digital transistor (built-in resistor) |
| 文件： | 总1页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTA125TUA / DTA125TKA / DTA125TSA
Transistors
Digital transistor (built-in resistor)
DTA125TUA / DTA125TKA / DTA125TSA
!Features
!External dimensions (Units : mm)
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input,
and parasitic effects are almost completely eliminated.
3) Only the on / off conditions need to be set for
operation, making device design easy.
DTA125TUA
1.25
2.1
0.1to0.4
Each lead has same dimensions
(
)
)
(1) Emitter Source
ROHM : UMT3
EIAJ : SC-70
(
)
(2) Base Gate
(3) Collector Drain
(
4) Higher mounting densities can be achieved.
DTA125TKA
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
V
V
V
CBO
CEO
EBO
−50
−50
−5
−100
200
1.6
Collector-emitter voltage
Emitter-base voltage
Collector current
V
2.8
V
I
C
mA
DTA125TUA / DTA125TKA
Collector power
dissipation
0.3to0.6
Pc
mW
DTA125TSA
300
Each lead has same dimensions
Junction temperature
Storage temperature
Tj
150
°C
°C
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
Tstg
−
55 ∼ +150
ROHM : SMT3
EIAJ : SC-59
DTA125TSA
!Package, marking, and packaging specifications
4
2
Part No.
DTA125TUA
UMT3
9A
DTA125TKA
SMT3
9A
DTA125TSA
Package
Marking
SPT
−
Packaging code
Basic ordering unit (pieces)
T106
T146
TP
0.45
3000
3000
5000
0.45
2.5 0.5
5
2
( )
1
(
)
( )
3
Taping specifications
(1) Emitter
(2) Collector
(3) Base
ROHM : SPT
EIAJ : SC-72
!Electrical characteristics (Ta = 25°C)
!Circuit schematic
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
C
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
−
−
−
−
−
−
−
−
−0.5
−0.5
−0.3
600
260
−
V
V
I
I
I
C
C
E
=
=
=
−50µA
−1mA
−50µA
−50
−50
−5
−
−
−
100
140
−
B
R1
E
V
I
CBO
EBO
CE(sat)
FE
µA
µA
V
V
CB
EB
=
=
−50V
−4V
Emitter cutoff current
I
V
E : Emitter
C : Collector
B : Base
Collector-emitter saturation voltage
DC current transfer ratio
V
−
I
I
C
=
=
−0.5mA , I
−1mA , VCE
B
=
=
−0.05mA
−5V
−
h
250
200
250
−
kΩ
MHz
C
Input resistance
R1
∗
Transition frequency
f
T
V
CE = −10V , IE = 5mA , f = 100MHz
∗
Transition frequency of the device.
相关型号：
DTA125TUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ROHS COMPLIANT, UMT3, SC-70, 3 PIN
ROHM
DTA125TUAT107
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
ROHM
DTA125TUT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, UMT, 3 PIN
ROHM
DTA125TUT107
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOLD, UMT, 3 PIN
ROHM
DTA125TVTV2
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN
ROHM
DTA125TVTV3
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN
ROHM
DTA125TVTV4
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ATV, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明