DTB743ZE_11 [ROHM]
200mA / ?30V Low VCE (sat) Digital transistors; 数字晶体管200毫安/ ？ 30V的低VCE （SAT）
| 型号： | DTB743ZE_11 |
| 厂家： | 
ROHM |
| 描述： | 200mA / ?30V Low VCE (sat) Digital transistors |
| 文件： | 总3页 (文件大小：962K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
200mA / 30V Low VCE (sat) Digital transistors
(with built-in resistors)
DTB743ZE / DTB743ZM
Applications
Dimensions (Unit : mm)
Inverter, Interface, Driver
DTB743ZE
0.7
1.6
0.55
0.3
( )
3
Feature
( )
2
( )
1
1) VCE(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors
(see equivalent circuit).
0.2
0.2
0.15
(1) GND
(2) IN
(3) OUT
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
Each lead has same dimensions
Abbreviated symbol : P13
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
DTB743ZM
1.2
0.32
(3)
4) Only the on / off conditions need to be set for operation,
making the device design easy.
(
)( )
2
1
0.22
(1) IN
(2) GND
(3) OUT
0.13
0.4 0.4
0.5
0.8
VMT3
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
Each lead has same dimensions
Abbreviated symbol : P13
Absolute maximum ratings (Ta=25C)
Packaging specifications
Limits
Package
EMT3
Taping
TL
VMT3
Taping
T2L
Parameter
Symbol
Unit
DTB743ZE DTB743ZM
Packaging type
Code
Supply voltage
V
CC
IN
C (max)
V
V
−30
−20 to +5
−200
Input voltage
V
Basic ordering
unit (pieces)
∗1
∗2
3000
8000
Collector current
Power dissipation
Junction temperature
Storage temperature
I
mA
mW
C
Part No.
P
D
150
DTB743ZE
DTB743ZM
−
Tj
Tstg
150
−
C
−55 to +150
∗1 Characteristics of built-in transistor.
∗2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25C)
Equivalent circuit
Parameter
Symbol Min.
Typ. Max. Unit
Conditions
CC= −5V, I = −100μA
=−0.3V, I =−20mA
/I =−50mA / −2.5mA
= −5V
CC=−30V, V
=−2V, I =−100mA
CE=−10V
V
V
I(off)
−
−2.5
−
−
−
−0.3
−
V
V
O
OUT
Input voltage
V
R1
IN
I(on)
O
O
R2
Output voltage
Input current
V
O(on)
−70
−
−300
−1.4
−0.5
−
mV
mA
μA
−
IO I
I
I
−
V
V
V
V
I
GND(+)
OUT
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
I
O(off)
−
−
I=0V
G
I
140
−
−
O
O
IN
∗
f
T
260
4.7
10
−
MHz
kΩ
−
,
I
E
=5mA, f=100MHz
GND(+)
R1
3.29
8.0
6.11
12
−
−
R
2/R1
R1
=4.7kΩ / R =47kΩ
2
∗ Characteristics of built-in transistor.
www.rohm.com
2011.11 - Rev.A
1/2
c
○ 2011 ROHM Co., Ltd. All rights reserved.
DTB743ZE / DTB743ZM
Data Sheet
Electrical characteristics
200
-100
-10
-1
-100
-10
-1
II=-1.0mA
II=-0.9mA
II=-0.8mA
II=-0.7mA
II=-0.6mA
VO=-0.3V
VO=-5V
Ta=25ºC
160
II=-0.5mA
Ta=125ºC
75ºC
II=-0.4mA
Ta=125ºC
75ºC
120
80
40
0
25ºC
-55ºC
II=-0.3mA
II=-0.2mA
25ºC
-40ºC
II=-0.1mA
II=0A
-0.1
-0.1
-0.1
-1
-10
-100
-1000
0
-0.2 -0.4 -0.6 -0.8
-1
-1.2
0
0.4
0.8
1.2
1.6
2
OUTPUT CURRENT : IO (mA)
INPUT VOLTAGE : VI(off) (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig 1. Output Current vs. Output Voltage
Fig 2. Input Voltage vs. Output Current
(ON Characteristics)
Fig 3. Output Currentvs. Input Voltage
(OFF Characteristics)
-1
1000
100
10
VO=-5V
IO/II=20/1
Ta=125ºC
75ºC
25ºC
-40ºC
Ta=125ºC
75ºC
25ºC
-40ºC
-0.1
-0.01
-0.1
-1
-10
-100
-1000
-0.1
-1
-10
-100
-1000
OUTPUT CURRENT : IO (mA)
OUTPUT CURRENT : IO (mA)
Fig 5. Output Voltage vs. Output Current
Fig4. DC Current Gain vs. Output Current
www.rohm.com
2011.11 - Rev.A
2/2
c
○ 2011 ROHM Co., Ltd. All rights reserved.
Notice
N o t e s
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