DTC015TUB [ROHM]
NPN 100mA 50V Digital Transistors;
| 型号： | DTC015TUB |
| 厂家： | 
ROHM |
| 描述： | NPN 100mA 50V Digital Transistors |
| 文件： | 总8页 (文件大小：1041K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC015T series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
llOutline
Parameter
Value
50V
VMT3
EMT3F
V
CEO
I
100mA
C
ꢀ
ꢀ
R
100kΩ
1
DTC015TM
(SC-105AA)
DTC015TEB
(SC-89)
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UMT3F
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llFeatures
1) Built-In Biasing Resistor
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2) Built-in bias resistors enable the configuration of
ꢀan inverter circuit without connecting external
ꢀinput resistors (see inner circuit) .
ꢀ
DTC015TUB
(SC-85)
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3) The bias resistors consist of thin-film resistors
ꢀwith complete isolation to allow negative biasing
ꢀof the input. They also have the advantage of
ꢀcompletely eliminating parasitic effects.
4) Only the on/off conditions need to be set
ꢀfor operation, making the circuit design easy.
5) Complementary PNP Types: DTA015T series
6) Lead Free/RoHS Compliant.
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llInner circuit
llApplication
B: BASE
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
C: COLLECTOR
E: EMITTER
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llPackaging specifications
Basic
Package Taping Reel size Tape width
Part No.
Package
ordering
Marking
size
code
(mm)
(mm)
unit.(pcs)
DTC015TM
VMT3
EMT3F
UMT3F
1212
1616
2021
T2L
TL
180
180
180
8
8
8
8000
3000
3000
61
61
61
DTC015TEB
DTC015TUB
TL
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
1/6
20121023 - Rev.001
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DTC015T series
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
50
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
50
V
5
V
100
mA
DTC015TM
150
*1
PD
Power dissipation
DTC015TEB
DTC015TUB
150
mW
200
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
50
Typ.
Max.
-
Collector-base breakdown
voltage
BVCBO
BVCEO
I = 50μA
-
V
V
C
Collector-emitter breakdown
voltage
I = 1mA
50
-
-
C
BVEBO
ICBO
I = 50μA
Emitter-base breakdown voltage
Collector cut-off current
5
-
-
-
V
μA
μA
V
E
V
CB
V
EB
= 50V
= 4V
-
-
0.5
IEBO
Emitter cut-off current
-
0.5
Collector-emitter saturation voltage
VCE(sat) I / I = 5mA / 0.25mA
-
0.03
-
0.15
600
130
C
B
hFE
R1
V
CE
= 10V, I = 5mA
C
DC current gain
Input resistance
100
70
-
-
100
kΩ
V
= 10V, I = -5mA,
E
CE
*2
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
2/6
20121023 - Rev.001
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DTC015T series
Datasheet
llElectrical characteristic curves (T =25°C)
a
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
3/6
20121023 - Rev.001
DTC015T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
4/6
20121023 - Rev.001
DTC015T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
5/6
20121023 - Rev.001
DTC015T series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
6/6
20121023 - Rev.001
Datasheet
Buy
DTC015TEB - Web Page
Distribution Inventory
Part Number
Package
DTC015TEB
EMT3F
Unit Quantity
3000
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
3000
Taping
inquiry
Yes
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