DTC114GKAT146 [ROHM]
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors); NPN 100毫安50V数字晶体管（偏置电阻内置晶体管）
| 型号： | DTC114GKAT146 |
| 厂家： | 
ROHM |
| 描述： | NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) |
| 文件： | 总6页 (文件大小：901K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC114G series
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
Datasheet
llOutline
Parameter
Value
50V
UMT3
SMT3
V
CEO
I
100mA
C
ꢀ
ꢀ
R
10kΩ
DTC114GUA
DTC114GKA
SOT-346(SC-59)
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SOT-323(SC-70)
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llFeatures
1) Built-In Biasing Resistor
llInner circuit
2) Built-in bias resistors enable the configuration of
ꢀan inverter circuit without connecting external
ꢀinput resistors (see inner circuit) .
3) The bias resistors consist of thin-film resistors
ꢀwith complete isolation to allow negative biasing
ꢀof the input. They also have the advantage of
ꢀcompletely eliminating parasitic effects.
4) Complementary PNP Types: DTA114G series
5) Lead Free/RoHS Compliant.
B: BASE
C: COLLECTOR
E: EMITTER
llApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
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llPackaging specifications
Basic
Package
size
Taping
code
Reel size Tape width
Part No.
Package
ordering
Marking
(mm)
(mm)
unit.(pcs)
DTC114GUA
DTC114GKA
UMT3
SMT3
2021
2928
T106
T146
180
180
8
8
3000
3000
K24
K24
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
1/5
20121023 - Rev.001
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DTC114G series
Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Values
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
50
50
V
5
V
Collector current
100
mA
DTC114GUA
DTC114GKA
200
*1
PD
Power dissipation
mW
200
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
llElectrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
50
Typ.
Max.
-
Collector-base breakdown
voltage
BVCBO
BVCEO
I = 50μA
-
V
V
C
Collector-emitter breakdown
voltage
I = 1mA
50
-
-
C
BVEBO
ICBO
I = 720μA
Emitter-base breakdown voltage
Collector cut-off current
5
-
-
-
-
V
μA
μA
V
E
V
CB
= 50V
0.5
580
0.3
-
IEBO
V = 4V
EB
Emitter cut-off current
300
-
-
Collector-emitter saturation voltage
VCE(sat) I / I = 10mA / 0.5mA
-
C
B
hFE
R
V
CE
= 5V, I =5mA
C
DC current gain
30
7
-
-
Emitter-base resistance
-
10
13
kΩ
V
= 10V, I = -5mA,
E
CE
*2
fT
Transition frequency
-
250
-
MHz
f = 100MHz
*1 Each terminal mounted on a reference footprint
*2 Characteristics of built-in transistor
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
2/5
20121023 - Rev.001
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DTC114G series
Datasheet
llElectrical characteristic curves (T =25°C)
a
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC Current gain vs. Collector Current
Fig.4 Collector-emitter saturation voltage vs.
Collector Current
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
3/5
20121023 - Rev.001
DTC114G series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
4/5
20121023 - Rev.001
DTC114G series
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Datasheet
llDimensions
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www.rohm.com
© 2012 ROHMCo., Ltd. All rights reserved.
5/5
20121023 - Rev.001
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