DTC115EMFHAT2L [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon;型号: | DTC115EMFHAT2L |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, NPN, Silicon |
文件: | 总10页 (文件大小:534K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DTC115E series
Datasheet
NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
VMT3
EMT3F
Parameter
VCC
Value
50V
OUT
OUT
IN
GND
IN
IC(MAX.)
R1
100mA
100kW
100kW
GND
DTC115EM
(SC-105AA)
DTC115EEB
(SC-89)
R2
EMT3
UMT3
OUT
OUT
lFeatures
1) Built-In Biasing Resistors, R1 = R2 = 100kW.
IN
IN
GND
GND
2) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
DTC115EE
SOT-416 (SC-75A)
DTC115EUA
SOT-323 (SC-70)
SMT3
3) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
OUT
IN
GND
4) Only the on/off conditions need to be set for
operation, making the circuit design easy.
5) Complementary PNP Types :DTA115E series
6) Lead Free/RoHS Compliant.
DTC115EKA
SOT-346 (SC-59)
lInner circuit
lApplication
Switching circuit, Inverter circuit, Interface circuit,
Driver circuit
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
Package
Marking
(mm)
(mm)
DTC115EM
VMT3
EMT3F
EMT3
UMT3
SMT3
1212
1616
1616
2021
2928
T2L
TL
180
180
180
180
180
8
8
8
8
8
8,000
3,000
3,000
3,000
3,000
29
29
29
29
29
DTC115EEB
DTC115EE
TL
DTC115EUA
DTC115EKA
T106
T146
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
1/9
Data Sheet
DTC115E series
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
VCC
VIN
Values
50
Unit
V
Supply voltage
Input voltage
V
-10 to +40
20
IO
mA
mA
Output current
Collector current
*1
100
IC(MAX.)
DTC115EM
DTC115EEB
DTC115EE
Power dissipation
150
200
mW
mW
*2
PD
DTC115EUA
DTC115EKA
Tj
150
°C
°C
Junction temperature
Tstg
Range of storage temperature
-55 to +150
lElectrical characteristics(Ta = 25°C)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Conditions
Min.
Typ.
Max.
Unit
V
VCC = 5V, IO = 100μA
VO = 0.3V, IO = 1mA
IO / II = 5mA / 0.25mA
VI = 5V
-
3
-
0.5
-
Input voltage
-
0.1
-
Output voltage
Input current
-
0.3
0.15
0.5
-
V
mA
mA
-
-
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
IO(off)
GI
Output current
DC current gain
Input resistance
Resistance ratio
-
-
82
70
0.8
-
R1
100
1
130
1.2
kW
-
R2/R1
-
VCE = 10V, IE = -5mA,
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
2/9
Data Sheet
DTC115E series
lElectrical characteristic curves(Ta = 25°C)
Fig.2 Output current vs. input voltage
Fig.1 Input voltage vs. output current
(OFF characteristics)
(ON characteristics)
10
10
VCC=5V
Ta= -40ºC
25ºC
85ºC
125ºC
1
1
Ta=125ºC
85ºC
0.1
0.01
25ºC
-40ºC
VO=0.3V
0.1
0.01
0
1
2
3
0.1
1
10
100
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current vs. output voltage
II=
1000
20
VO=5V
Ta=25ºC
100μA
90μA
Ta=125ºC
85ºC
15
10
5
25ºC
-40ºC
80μA
70μA
60μA
50μA
100
10
1
40μA
30μA
20μA
0A
0
0.01
0.1
1
10
100
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
3/9
Data Sheet
DTC115E series
lElectrical characteristic curves(Ta = 25°C)
Fig.5 Output voltage vs. output current
1
IO/II = 20
Ta=125ºC
85ºC
25ºC
-40ºC
0.1
0.01
0.1
1
10
100
OUTPUT CURRENT : IO [A]
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
4/9
Data Sheet
DTC115E series
lDimensions (Unit : mm)
D
c
A
VMT3
b1
e
b
x
S A
b3
S
e
b2
Patterm of terminal position areas
MILIMETERS
MIN
INCHES
DIM
MAX
0.55
0.10
0.27
0.37
0.18
1.30
0.90
MIN
0.018
0
0.007
0.011
0.003
0.043
0.028
MAX
0.022
0.004
0.011
0.015
0.007
0.051
0.035
A
A1
b
b1
c
0.45
0.00
0.17
0.27
0.08
1.10
0.70
D
E
0.40
0.02
e
HE
L
Lp
x
1.10
0.10
0.20
-
1.30
0.30
0.40
0.10
0.043
0.004
0.008
-
0.051
-
-
0.004
MILIMETERS
MAX
INCHES
0.03
DIM
MIN
MIN
MAX
0.80
e1
b2
b3
l1
-
-
-
0.37
0.47
0.50
-
-
-
0.015
0.019
0.02
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
5/9
Data Sheet
DTC115E series
lDimensions (Unit : mm)
EMT3F
D
A
b
c
x
S A
e
e
S
b2
Patterm of terminal position areas
MILIMETERS
INCHES
DIM
MIN
0.65
0.00
0.60
0.21
0.08
1.50
0.76
MAX
0.85
0.10
0.80
0.36
0.18
1.70
0.96
MIN
MAX
A
A1
A2
b
c
D
0
0.004
0.031
0.014
0.007
0.067
0.038
0.024
0.008
0.003
0.059
0.03
E
0.50
0.37
0.02
e
HE
L
1.50
1.70
0.059
0.067
0.015
Lp
x
0.35
-
0.55
0.10
0.014
-
0.022
0.004
MILIMETERS
MAX
INCHES
DIM
MIN
-
-
MIN
-
-
MAX
0.041
0.018
0.026
e1
b2
l1
1.05
0.46
0.65
-
-
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
6/9
Data Sheet
DTC115E series
lDimensions (Unit : mm)
D
A
EMT3
b1
c
Q
A3
b3
e
b
x
S A
S
e
b2
Patterm of terminal position areas
MILIMETERS
INCHES
DIM
MIN
0.60
0.00
MAX
0.80
0.10
MIN
0.024
0
MAX
0.031
0.004
A
A1
A3
b
b1
c
D
E
e
0.25
0.50
0.01
0.02
0.15
0.25
0.10
1.50
0.70
0.30
0.40
0.20
1.70
0.90
0.006
0.01
0.004
0.059
0.028
0.012
0.016
0.008
0.067
0.035
HE
L1
Lp
Q
1.40
0.10
0.15
0.05
-
1.80
-
-
0.25
0.10
0.055
0.004
0.006
0.002
-
0.071
-
-
0.01
0.004
x
MILIMETERS
MAX
INCHES
0.04
DIM
MIN
MIN
MAX
1.10
e1
b2
b3
l1
-
-
-
0.40
0.50
0.70
-
-
-
0.016
0.02
0.028
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
7/9
Data Sheet
DTC115E series
lDimensions (Unit : mm)
UMT3
D
A
c
Q
A3
e
b
x
S A
e
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
0.80
0.00
INCHES
DIM
MAX
1.00
0.10
MIN
0.031
0
MAX
0.039
0.004
A
A1
A3
b
c
D
0.25
0.65
0.01
0.15
0.10
1.90
1.15
0.30
0.20
2.10
1.35
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
E
e
0.03
HE
L1
Lp
Q
2.00
0.20
0.25
0.10
-
2.20
0.50
0.55
0.30
0.10
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
x
MILIMETERS
MAX
1.55
INCHES
0.06
DIM
MIN
MIN
MAX
e1
b2
l1
-
-
0.50
0.65
-
-
0.02
0.026
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
8/9
Data Sheet
DTC115E series
lDimensions (Unit : mm)
D
SMT3
A
c
Q
A3
e
b
x
S A
e
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
1.00
0.00
INCHES
DIM
MAX
1.30
0.10
MIN
-
0
MAX
0.051
0.004
A
A1
A3
b
c
D
0.25
0.95
0.01
0.35
0.09
2.80
1.50
0.50
0.25
3.00
1.80
0.014
0.004
0.11
0.02
0.01
0.118
0.071
E
e
0.059
0.04
HE
L1
Lp
Q
x
2.60
0.30
0.40
0.20
-
3.00
0.60
0.70
0.30
0.10
0.10
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.004
0.004
y
-
-
MILIMETERS
MAX
2.10
INCHES
0.08
DIM
MIN
MIN
MAX
e1
b2
l1
0.60
0.90
-
-
0.024
0.035
-
Dimension in mm/inches
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© 2012 ROHM Co., Ltd. All rights reserved.
2012.04 - Rev.A
9/9
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The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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