DTC124TSATP [ROHM]
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN;
| 型号： | DTC124TSATP |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN 开关 晶体管 |
| 文件： | 总3页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
100mA / 50V Digital transistors
(with built-in resistor)
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
Applications
Inverter, Interface, Driver
Features
1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
equivalent circuit).
2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also
have the advantage of almost completely eliminating parasitic effects.
3)Only the on/off conditions need to be set for operation, making the device design easy.
Structure
NPN epitaxial planar silicon transistor (Resistor built-in type)
Dimensions (Unit : mm)
0.7
1.6
0.3
DTC124TM
DTC124TE
0.55
1.2
0.32
(
3
)
(3)
(
)
( )
1
2
(
)( )
2
1
0.22
0.2
0.2
0.13
0.15
0.4 0.4
0.5
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
0.5
0.5
0.8
ROHM : EMT3
EIAJ : SC-75A
1.0
Abbreviated symbol : 05
(3) Collector
ROHM : VMT3
DTC124TUA
Abbreviated symbol : 05
2.9
1.1
0.8
2.0
0.9
0.7
DTC124TKA
0.4
0.2
0.3
(
3
)
(
)
3
(
)
( )
1
2
(
)
( )
1
2
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.650.65
1.3
0.95 0.95
1.9
0.15
0.15
ROHM : UMT3
EIAJ : SC-70
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Each lead has same dimensions
Abbreviated symbol : 05
Abbreviated symbol : 05
Inner circuit
C
E
B
R1
B : Base
C : Collector
E : Emitter
R1
=22kΩ
www.rohm.com
2009.06 - Rev.B
1/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
DTC124TM / DTC124TE / DTC124TUA / DTC124TKA
Data Sheet
Packaging specifications
Package
VMT3
EMT3
UMT3 SMT3
Packaging type
Code
Taping Taping Taping Taping
T146
3000 3000
T2L
TL
T106
Basic ordering unit (pieces) 8000
Part No.
3000
−
−
−
−
−
−
DTC124TM
−
−
DTC124TE
−
−
DTC124TUA
DTC124TKA
−
−
Absolute maximum ratings (Ta=25C)
Limits
Parameter
Symbol
Unit
V
DTC124TM DTC124TE DTC124TUA DTC124TKA
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
50
50
5
V
V
IC
100
mA
150
Collector power dissipation
Junction temperature
Storage temperature
200
Pc
Tj
mW
°C
150
−55 to +150
Tstg
°C
Electrical characteristics (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
−
−
−
−
−
−
−
Collector-base breakdown voltage
BVCBO
50
50
5
V
V
I
I
I
C
=50μA
=1mA
−
Collector-emitter breakdown voltage BVCEO
C
−
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
V
E
=50μA
CB=50V
EB=4V
−
I
CBO
EBO
CE(sat)
FE
0.5
0.5
0.3
μA
μA
V
V
V
−
−
Emitter cutoff current
I
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
V
I
C/I
B
=5mA/0.5mA
=1mA
−
h
100 250 600
V
V
CE=5V, I
C
−
R
1
15.4
22
28.6 kΩ
−
−
∗
Transition frequency
f
T
250
MH
Z
CE=10V, I
E
=−5mA, f=100MH
Z
∗ Characteristics of built-in transistor
Electrical characteristic curves
1k
1
VCE=5V
lC/lB=10
500
500m
200m
100m
50m
200
100
Ta=100˚C
Ta=100˚C
25˚C
25˚C
-40˚C
50
-40˚C
20
10
5
20m
10m
5m
2m
1m
2
1
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
100μ 200μ
500μ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C(A)
COLLECTOR CURRENT : IC(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
www.rohm.com
2009.06 - Rev.B
2/2
c
○ 2009 ROHM Co., Ltd. All rights reserved.
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
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R0039
A
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