DTC143TE3 (新产品) [ROHM]
These are the standard products of "digital transistors" which ROHM invented and marketed first in the world.;
| 型号： | DTC143TE3 (新产品) |
| 厂家： | 
ROHM |
| 描述： | These are the standard products of "digital transistors" which ROHM invented and marketed first in the world. 小信号双极晶体管 |
| 文件： | 总3页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transistors
DTC143TEB
100mA / 50V Digital transistors
(with built-in resistors)
DTC143TEB
zApplications
zDimensions (Unit : mm)
Inverter, Interface, Driver
EMT3F
1.6
0.7
zFeatures
0.26
(3)
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors
with complete isolation to allow negative biasing
of the input. They also have the advantage of
almost completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for
operation, making the device design easy.
(1)
0.5 0.5
1.0
(2)
0.13
(1) Base
(2) Emitter
(3) Collector
Each lead has same dimensions
Abbreviated symbol : 03
zStructure
zEquivalent circuit
NPN silicon epitaxial planar transistor type
(Resistor built-in)
C
E
zPackaging specifications
B
Package
EMT3F
Taping
TL
R1
Packaging type
Code
B : Base
C : Collector
E : Emitter
Part No.
Basic ordering unit (pieces)
3000
DTC143TEB
R1=4.7kΩ
zAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base voltage
Collector-Emitter voltage
V
V
V
CBO
50
50
V
V
CEO
Emitter-Base voltage
Collector current
EBO
5
100
V
I
C
mA
mW
°C
∗1
Power dissipation
P
D
150
Junction temperature
Range of Storage temperature
Tj
Tstg
150
−55 to +150
°C
∗1 Each terminal mounted on a recommended land
1/2
Transistors
DTC143TEB
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
BVCEO
BVCBO
BVEBO
50
50
5
I
I
I
C
=
1mA
50µA
50µA
−
−
V
C=
−
−
V
E
=
I
CBO
EBO
CE(sat)
FE
−
−
500
500
150
600
−
nA
nA
mV
−
V
V
CB
EB
=50V
Emitter cut-off current
I
−
−
=4V
Collector-emitter saturation voltage
DC current gain
V
−
−
I
C/I
B
=
5mA/0.25mA
h
100
−
250
250
4.7
V
V
CE
=
5V, I 1mA
C
=
f
T
∗
MHz
kΩ
CE=10V, I
E
=−
5mA, f=100MHz
Transition frequency
R
3.5
5.9
−
Inputa resistance
∗ Characteristics of built-in transistor
zElectrical characteristic curves
1k
1
VCE=5V
lC/lB=20
500
500m
200
100
50
200m
100m
50m
Ta=100°C
25°C
Ta=100°C
25°C
−40°C
−40°C
20
10
5
20m
10m
5m
2
1
2m
1m
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs.
collector current
Fig.2 Collector-emitter saturation
voltage vs. collector current
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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Copyright © 2007 ROHM CO.,LTD.
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Appendix1-Rev2.0
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