DTC144GE_11 [ROHM]
100mA / 50V Digital transistors(with built-in resistors); 百毫安/ 50V数字晶体管（带内置式电阻器）
| 型号： | DTC144GE_11 |
| 厂家： | 
ROHM |
| 描述： | 100mA / 50V Digital transistors(with built-in resistors) |
| 文件： | 总3页 (文件大小：148K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
100mA / 50V Digital transistors
(with built-in resistors)
DTC144GE / DTC144GUA / DTC144GKA
Applications
Dimensions (Unit : mm)
Inverter, Interface, Driver
EMT3
(SC-75A)
<SOT-416>
0.7
1.6
0.3
0.55
Features
(
3
)
1)The built-in bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input, and parasitic effects
are almost completely eliminated.
2)Only the on / off conditions need to be set for operation, making the
device design easy.
(
2
)
( )
1
0.2
0.2
0.15
0.5
0.5
1.0
3)Higher mounting densities can be achieved.
(1) GND
(2) IN
Each lead has same dimensions
Abbreviated symbol : K26
(3) OUT
Structure
2.0
0.9
0.7
NPN epitaxial planar silicon transistor (Resistor built-in type)
UMT3
<SC-70>
0.2
0.3
( )
3
Packaging specifications
Package
EMT3 UMT3 SMT3
Taping Taping Taping
( )
2
( )
1
Packaging type
Code
TL
T106 T146
0.650.65
1.3
0.15
Each lead has same dimensions
Part No.
Basic ordering unit (pieces) 3000 3000 3000
(1) GND
(2) IN
(3) OUT
DTC144GE
DTC144GUA
DTC144GKA
−
−
−
Abbreviated symbol : K26
−
−
−
2.9
1.1
0.8
SMT3
<SC-59>
0.4
Inner circuit
( )
3
C
E
B
R
( )
( )
1
2
0.95 0.95
1.9
0.15
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
E : Emitter
C : Collector
B : Base
Abbreviated symbol : K26
R=47kΩ
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
50
50
5
V
V
I
C
100
mA
DTC144GE
150
Collector power
dissipation
Pc
mW
DTC144GUA / DTC144GKA
200
Junction temperature
Storage temperature
Tj
150
C
C
Tstg
−55 to +150
www.rohm.com
2011.09 - Rev.D
1/2
c
○ 2011 ROHM Co., Ltd. All rights reserved.
DTC144GE / DTC144GUA / DTC144GKA
Data Sheet
Electrical characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
Min.
50
50
5
Typ.
−
−
−
−
−
−
−
47
250
Max.
−
−
Unit
Conditions
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
V
V
I
I
I
C
=50μA
=1mA
C
−
V
E
=160μA
CB=50V
EB=4V
−
65
−
68
32.9
−
0.5
130
0.3
−
61.1
−
μA
μA
V
V
V
I
CBO
EBO
CE(sat)
FE
Emitter cutoff current
I
I
I
C=10mA, I
B
=0.5mA
=5mA , VCE=5V
Collector-emitter saturation voltage
DC current transfer ratio
V
−
kΩ
MHz
C
h
−
Emitter-base resistance
R
∗
V
CE=10V , I
E
= −5mA , f=100MHz
Transition frequency
fT
∗
Characteristics of built-in transistor
Electrical characteristics curves
1k
1
V
CE=5V
IC/IB=20/1
Ta=100°C
500
500m
Ta=100°C
Ta=− 40°C
Ta=25°C
Ta=25°C
200
100
50
200m
100m
50m
Ta= −40°C
20m
20
10m
5m
10
5
2m
1m
2
1
100μ 200μ 500μ 1m 2m
5m 10m 20m
50m 100m
100μ 200μ 500μ 1m 2m
5m 10m 20m
50m 100m
COLLECTOR CURRENT : I (A)
C
COLLECTOR CURRENT : I (A)
C
Fig.2 Collector-Emitter saturation
vs. Collector current
Fig.1 DC current gain
vs. Collector current
www.rohm.com
2011.09 - Rev.D
2/2
c
○ 2011 ROHM Co., Ltd. All rights reserved.
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illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
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R1120
A
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