DTC144VUA [ROHM]
Digital transistor (built-in resistors); 数字晶体管（内置电阻）
| 型号： | DTC144VUA |
| 厂家： | 
ROHM |
| 描述： | Digital transistor (built-in resistors) |
| 文件： | 总1页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC144VUA / DTC144VKA / DTC144VSA
Transistors
Digital transistor (built-in resistors)
DTC144VUA / DTC144VKA / DTC144VSA
!Features
!External dimensions (Units : mm)
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors.
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the
input, and parasitic effects are almost completely
eliminated.
DTC144VUA
1.25
2.1
(
)
)
(1) Emitter Source
(
)
(2) Base Gate
(3) Collector Drain
(
ROHM : UMT3
EIAJ : SC-70
0.1to0.4
Each lead has same dimensions
3) Only the on / off conditions need to be set for
operation, making device design easy.
4) Higher mounting densities can be achieved.
DTC144VKA
1.6
2.8
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
!Equivalent circuit
ROHM : SMT3
EIAJ : SC-59
0.3to0.6
Each lead has same dimensions
R1
OUT
IN
R2
DTC144VSA
GND
OUT
4
2
IN
GND
0.45
(1) Emitter
(2) Collector
(3) Base
0.45
2.5 0.5
5
ROHM : SPT
EIAJ : SC-72
(
) ( ) ( )
1 2 3
Taping specifications
!Packaging, marking and packaging specifications
!Absolute maximum ratings (Ta = 25°C)
Type
DTC144VUA
UMT3
166
DTC144VKA
DTC144VSA
Parameter
Symbol
Limits
Unit
V
Package
SMT3
SPT
−
Supply voltage
V
CC
50
−15~+40
30
Marking
E66
Input voltage
Output curren
V
I
V
Packaging code
Basic ordering unit (pieces)
T106
T146
TP
I
O
mA
3000
3000
5000
I
C(Max.)
Pd
100
DTC144VUA / DTC144VKA
200
Power
dissipation
mW
DTC144VSA
Junction temperature
Storage temperature
300
Tj
150
°C
°C
Tstg
−55~+150
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
V
V
I(off)
I(on)
−
6
−
−
1
−
0.3
0.16
0.5
−
61.1
0.26
−
V
CC=5V , I
=0.3V , I
=10mA , I
=5V
CC=50V , V
=5mA , V =5V
O
=100µA
Input voltage
V
O
O
=2mA
Output voltage
Input current
V
O(on)
−
−
0.1
V
mA
µA
−
kΩ
−
I
O
I
=0.5mA
I
I
−
−
−
47
0.21
250
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
I
O(off)
−
I=0V
G
I
33
32.9
0.17
−
I
O
O
R1
−
−
R
2/R1
f
T
MHz
V
CE=10V , IE=−5mA , f=100MHz
∗
Transition frequency of the device.
∗
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