DTC623TU [ROHM]
Digital transistors (built-in resistor); 数字晶体管（内置电阻）
| 型号： | DTC623TU |
| 厂家： | 
ROHM |
| 描述： | Digital transistors (built-in resistor) |
| 文件： | 总3页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC623TU / DTC623TK
Transistors
Digital transistors (built-in resistor)
DTC623TU / DTC623TK
zExternal dimensions (Unit : mm)
zFeatures
In addition to the features of regular digital transistors.
1) Low saturation voltage, typically
VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these
transistors ideal for muting circuits.
2) These transistors can be used at high current levels,
IC=600mA.
2.0 0.2
UMT3
1.3 0.1
0.9 0.1
<SC-70>
0.65 0.65
0.2 0.7 0.1
(1)
(2)
0−0.1
(3)
+0.1
−0
0.3
0.15 0.05
(1) Emitter
(2) Base
(3) Collector
Each lead has same dimensions
zStructure
NPN digital transistor
(Built-in resistor type)
Abbreviated symbol : R02
2.9 0.2
SMT3
+0.2
1.1
−0.1
0.8 0.1
1.9 0.2
<SC-59>
0.95 0.95
zEquivalent circuit
(1)
(2)
(3)
C
B
+0.1
+0.1
0.4
0.15
−0.05
−0.06
Each lead has same dimensions
Abbreviated symbol : R02
R
E
(1) Emitter
(2) Base
(3) Collector
R=2.2kΩ
B : Base
C : Collector
E : Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
VCBO
VCEO
VEBO
IC
Limits
Unit
V
20
20
V
12
V
600
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
PC
200
Tj
150
Tstg
−55 to +150
1/2
DTC623TU / DTC623TK
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
20
20
12
−
−
−
−
−
−
−
−
−
0.5
0.5
V
V
V
IC=50µA
IC=1mA
IE=50µA
Collector-emitter breakdown voltage BVCEO
Emitter-base breakdown voltage
Collector cutoff current
BVEBO
ICBO
µA VCB=20V
µA VEB=12V
IEBO
−
Emitter cutoff current
Collector-emitter saturation voltage VCE (sat)
−
820
40
−
150 mV IC=50mA, IB=2.5mA
2700 VCE=5V, IC=50mA
DC current transfer ratio
Input resistance
hFE
R1
fT
−
1.54 2.2 2.86 kΩ
−
−
−
∗
Transition frequency
150
0.4
−
−
MHz VCE=10V, IE= −50mA, f=100MHz
Output "ON" resistance
Ron
Ω
V =5V, RL=1kΩ, f=1kHz
I
∗Transition frequency of the device.
zPackaging specifications and hFE
Package
UMT3
Taping
T106
SMT3
Packaging type
Code
Taping
T146
3000
−
Type
Basic ordering unit (pieces)
3000
DTC623TU
DTC623TK
−
zElectrical characteristic curves
10000
1000
100
10
10000
1000
100
10
IC / IB=20 / 1
V
CE=5V
Ta=25°C
f=1kHz
RL=1kΩ
hFE=1500 (5V / 50mA)
100°C
25°C
1000
−40°C
100°C
−40°C
25°C
1
100
0.1
0.1
1
1
10
100
1000
0.1
1
10
100
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
INPUT VOLTAGE : V (V)
I
COLLECTOR CURRENT : IC (mA)
Fig.1 DC Current Gain vs.
Collector Current
Fig.3 "ON" resistance vs. Input Voltage
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
zRon measurement circuit
v
0
Ron=
×RL
RL=1kΩ
v
i−v
0
Input
v
i
Output
100mV
(rms)
V
v
0
f=1kHz
v
I
Fig.4 Output "ON" resistance (Ron)
measurement circuit
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
相关型号：
DTC643TUT106
Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN
ROHM
DTC663EKT146
Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SMT3, SC-59, 3 PIN
ROHM
DTC663EUT106
Small Signal Bipolar Transistor, 0.6A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, UMT3, SC-70, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明