DTD114ESTP [ROHM]

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN;
DTD114ESTP
型号: DTD114ESTP
厂家: ROHM    ROHM
描述:

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN

开关 晶体管
文件: 总3页 (文件大小:90K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTD114EK / DTD114ES  
Transistors  
500mA / 50V Digital transistors  
(with built-in resistors)  
DTD114EK / DTD114ES  
zApplications  
zExternal dimensions (Unit : mm)  
Inverter, Interface, Driver  
2.9  
1.1  
0.8  
DTD114EK  
0.4  
( )  
3
zFeature  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input resistors  
(see equivalent circuit).  
(
)
( )  
1
2
0.95 0.95  
1.9  
0.15  
(1) GND  
(2) IN  
(3) OUT  
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow negative biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
ROHM : SMT3  
EIAJ : SC-59  
Each lead has same dimensions  
Addreviated symbol : F24  
3) Only the on / off conditions need to be set for operation,  
making the device design easy.  
DTD114ES  
4.0  
2.0  
zStructure  
NPN epitaxial planar silicon transistor  
(Resistor built-in type)  
0.45  
2.5  
0.45  
0.5  
(1) GND  
(2) OUT  
(3) IN  
ROHM : SPT  
EIAJ : SC-72  
5.0  
(1) (2) (3)  
zPackaging specifications  
Package  
SMT3  
SPT  
Packaging type  
Code  
Taping Taping  
T146  
3000  
TP  
5000  
Basic ordering  
unit (pieces)  
Part No.  
DTD114EK  
DTD114ES  
zAbsolute maximum ratings (Ta=25°C)  
zEquivalent circuit  
Limits  
Parameter  
Symbol  
Unit  
DTD114EK DTD114ES  
OUT  
R1  
IN  
V
CC  
IN  
V
V
Supply voltage  
50  
10 to +40  
500  
R2  
V
Input voltage  
GND  
OUT  
I
C
mA  
mW  
C
Output current  
P
D
Power dissipation  
Junction temperature  
Storage temperature  
200  
300  
Tj  
Tstg  
150  
55 to +150  
IN  
C
GND  
R1=10kR2=10kΩ  
Rev.A  
1/2  
DTD114EK / DTD114ES  
Transistors  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ. Max. Unit  
Conditions  
V
I(off)  
3
0.5  
V
CC=5V, I  
=0.3V, I  
/I =50mA/2.5mA  
=5V  
CC=50V, V  
O
=100µA  
V
Input voltage  
V
I(on)  
V
O
O
=10mA  
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
0.88  
0.5  
V
mA  
µA  
I
O I  
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I=0V  
G
I
56  
7
O
=5V, I  
O
=50mA  
R
1
10  
1
13  
1.2  
kΩ  
R2  
/R1  
0.8  
Transition frequency  
f
T
200  
MHz  
VCE=10V, IE=50mA, f=100MHz  
Characteristics of built-in transistor  
zElectrical characteristics curves  
Rev.A  
2/2  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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