DTD114ESTP [ROHM]
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN;型号: | DTD114ESTP |
厂家: | ROHM |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SPT, SC-72, 3 PIN 开关 晶体管 |
文件: | 总3页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DTD114EK / DTD114ES
Transistors
500mA / 50V Digital transistors
(with built-in resistors)
DTD114EK / DTD114ES
zApplications
zExternal dimensions (Unit : mm)
Inverter, Interface, Driver
2.9
1.1
0.8
DTD114EK
0.4
( )
3
zFeature
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input resistors
(see equivalent circuit).
(
)
( )
1
2
0.95 0.95
1.9
0.15
(1) GND
(2) IN
(3) OUT
2) The bias resistors consist of thin-film resistors with
complete isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
ROHM : SMT3
EIAJ : SC-59
Each lead has same dimensions
Addreviated symbol : F24
3) Only the on / off conditions need to be set for operation,
making the device design easy.
DTD114ES
4.0
2.0
zStructure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
0.45
2.5
0.45
0.5
(1) GND
(2) OUT
(3) IN
ROHM : SPT
EIAJ : SC-72
5.0
(1) (2) (3)
zPackaging specifications
Package
SMT3
SPT
Packaging type
Code
Taping Taping
T146
3000
TP
5000
−
Basic ordering
unit (pieces)
Part No.
DTD114EK
DTD114ES
−
zAbsolute maximum ratings (Ta=25°C)
zEquivalent circuit
Limits
Parameter
Symbol
Unit
DTD114EK DTD114ES
OUT
R1
IN
V
CC
IN
V
V
Supply voltage
50
−10 to +40
500
R2
V
Input voltage
GND
OUT
I
C
mA
mW
C
Output current
P
D
Power dissipation
Junction temperature
Storage temperature
200
300
Tj
Tstg
150
−55 to +150
IN
C
GND
R1=10kΩ R2=10kΩ
Rev.A
1/2
DTD114EK / DTD114ES
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ. Max. Unit
Conditions
V
I(off)
−
3
−
−
0.5
−
V
CC=5V, I
=0.3V, I
/I =50mA/2.5mA
=5V
CC=50V, V
O
=100µA
V
Input voltage
V
I(on)
V
O
O
=10mA
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
0.88
0.5
−
V
mA
µA
−
I
O I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I=0V
G
I
56
7
−
O
=5V, I
O
=50mA
R
1
10
1
13
1.2
−
kΩ
−
−
−
R2
/R1
0.8
−
Transition frequency
f
T
200
MHz
VCE=10V, IE=−50mA, f=100MHz
∗
Characteristics of built-in transistor
∗
zElectrical characteristics curves
Rev.A
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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