EMF5_08 [ROHM]
Power management (dual transistors); 电源管理（双晶体管）
| 型号： | EMF5_08 |
| 厂家： | 
ROHM |
| 描述： | Power management (dual transistors) |
| 文件： | 总5页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMF5
Transistors
Power management (dual transistors)
EMF5
2SA2018 and DTC144EE are housed independently in a EMT6 package.
zApplication
zDimensions (Units : mm)
Power management circuit
zFeatures
( )
3
( )
2
( )
1
( )
4
( )
5
( )
6
1) Power switching circuit in a single package.
2) Mounting cost and area can be cut in half.
1.2
1.6
zStructure
Silicon epitaxial planar transistor
ROHM : EMT6
Each lead has
same dimensions
zEquivalent circuits
Abbreviated symbol : F5
(3)
(2) (1)
DTr2
Tr1
R1
R2
(4)
(5)
(6)
R1=47kΩ
R2=47kΩ
zPackaging specifications
Type
Package
Marking
Code
EMF5
EMT6
F5
T2R
Basic ordering unit (pieces) 8000
Rev.A
1/4
EMF5
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
−15
−12
Unit
V
V
VCBO
VCEO
VEBO
−6
V
I
C
−500
−1.0
150(TOTAL)
150
−55~+150
mA
A
mW
°C
°C
Collector current
∗1
∗2
I
CP
Power dissipation
Junction temperature
Range of storage temperature
P
Tj
Tstg
C
∗1 Single pulse PW=1ms
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
DTr2
Parameter
Supply voltage
Symbol
Limits
50
Unit
V
V
CC
Input voltage
Collector current
V
IN
−10~+40
100
V
∗1
∗2
I
C
mA
mA
mW
°C
I
O
30
Output current
Power dissipation
P
Tj
Tstg
C
150(TOTAL)
150
−55~+150
Junction temperature
Range of storage temperature
∗1 Characteristics of built-in transistor.
°C
∗2 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
Max.
−
−
Unit
V
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
−12
−15
−6
−
−
−
270
−
−
−
−
−
−
−
I
I
I
C
=−1mA
=−10µA
V
C
−
V
E
=−10µA
CB=−15V
EB=−6V
I
CBO
EBO
CE(sat)
FE
−100
−100
−250
680
−
nA
nA
mV
−
MHz
pF
V
V
I
Collector-emitter saturation voltage
DC current gain
V
−100
−
260
6.5
I
C
=−200mA, I
B
=−10mA
=−10mA
=10mA, f=100MHz
=0mA, f=1MHz
h
V
V
V
CE=−2V, I
CE=−2V, I
C
Transition frequency
f
T
E
CB=−10V, I
E
Collector output capacitance
Cob
−
DTr2
Parameter
Symbol
Min.
−
3.0
−
−
−
Typ.
−
−
100
−
−
Max.
0.5
−
300
180
500
−
Unit
V
Conditions
V
V
I(off)
V
V
V
V
V
V
V
CC=5V, I
O
=100µA
Input voltage
I(on)
V
O
=0.3V, I
O
=2mA
Output voltage
Input current
V
O(on)
mV
µA
nA
−
O
=10mA, I
I
=0.5mA
I
I
I
=5V
CC=50V, V
=5V, I
CE=10V, I
Output current
DC current gain
Transition frequency
I
O(off)
I
=0V
G
I
68
−
250
O
O
=5mA
∗
f
T
−
−
MHz
E
=−5mA, f=100MHz
Input resistance
R
1
32.9
0.8
47
61.1
1.2
kΩ
−
−
−
Resistance ratio
R
2/R
1
1.0
∗Characteristics of built-in transistor.
Rev.A
2/4
EMF5
Transistors
zElectrical characteristic curves
Tr1
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Ta=125°C
Pulsed
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
I
C
/I
B
=50
C
°
C
C
°
I
C/I
B
=20
°
40
−
IC/IB
=10
Ta=125
Ta=25
Ta=
1 1
10
100
1000
11
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.2 DC current gain vs.
collector current
Fig.3 Collector-emitter saturation voltage
Fig.1 Grounded emitter propagation
characteristics
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
I
C B=20
/I
Pulsed
Ta=25°C
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
Ta=125°C
100
10
100
10
Ta=25°C
Ta=125°C
Ta=−40°C
11
10
100
1000
10 1
10
100
1000
11
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : IE (mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product
vs. emitter current
Fig.4 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
1000
I
E
=
0A
f
=
1MHz
Ta=25°C
100
Cib
10
1
Cob
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB V)
(
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
Rev.A
3/4
EMF5
Transistors
DTr2
100
10m
5m
1k
V
CC=5V
V
O
=0.3V
V
O
=5V
500
50
20
Ta=100°C
25°C
2m
1m
Ta=100°C
25°C
−40°C
200
100
50
−40°C
500µ
10
Ta=−40°C
25°C
200µ
100µ
50µ
5
100°C
20
2
1
10
5
20µ
10µ
5µ
500m
2
1
200m
100m
2µ
1µ
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : I (A)
O
OUTPUT CURRENT : I (A)
O
Fig.10 Output current vs. input voltage
(OFF characteristics)
Fig.9 Input voltage vs. output current
(ON characteristics)
Fig.11 DC current gain vs. output
current
1
lO
/lI
=20
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : I (A)
O
Fig.12 Output voltage vs. output
current
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Appendix1-Rev2.0
相关型号：
EMF9T2R
Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, EMT6, 6 PIN
ROHM
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