EMG9 [ROHM]
Emitter common (dual digital transistors); 发射器通用（双数字晶体管）
| 型号： | EMG9 |
| 厂家： | 
ROHM |
| 描述： | Emitter common (dual digital transistors) |
| 文件： | 总2页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMG9 / UMG9N / FMG9A
Transistors
Emitter common
(dual digital transistors)
EMG9 / UMG9N / FMG9A
!Features
!External dimensions (Units : mm)
1) Two DTC114E in a EMT or UMT or SMT package.
2) Mounting cost and area can be cut in half.
EMG9
( )
3
( )
2
( )
1
(
(
)
)
4
5
1.2
1.6
!Structure
Epitaxial planar type
NPN silicon transistor
(Built-in resistor type)
Each lead has same dimensions
ROHM
: EMT5
Abbreviated symbol : G9
UMG9N
The following characteristics apply to both the DTr1 and
DTr2.
1.25
2.1
!Equivalent circuit
0.1Min.
Each lead has same dimensions
EMG9 / UMG9N
FMG9A
(3)
(4)
(5)
(3)
(2)
(1)
R
1
=10kΩ
=10kΩ
R
1
=10kΩ
=10kΩ
ROHM
EIAJ
:
UMT5
R
1
R1
R1
R1
R2
R2
:
SC-88A
R
2
R2
R
2
R2
DTr2
DTr1
DTr2
DTr1
Abbreviated symbol : G9
(2)
(1)
(4)
(5)/(6)
FMG9A
1.6
2.8
!Absolute maximum ratings (Ta = 25°C)
Limits
Parameter
Symbol
Unit
0.3to0.6
Each lead has same dimensions
Supply voltage
V
CC
50
40
V
ROHM
EIAJ
:
SMT5
:
SC-74A
Input voltage
VIN
V
−10
50
Abbreviated symbol : G9
I
O
Output current
mA
I
C (Max.)
100
1
∗
2
∗
EMG9, UMG9N
150 (TOTAL)
300 (TOTAL)
150
Power
dissipation
Pd
mW
FMG9A
Junction temperature
Storage temperature
Tj
˚C
˚C
Tstg
−55∼+150
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
∗
∗
EMG9 / UMG9N / FMG9A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol Min.
Typ.
−
Max.
0.5
−
Unit
V
Conditions
−
3
V
CC
=
5V, I
0.3V, I
=10mA, I
5V
50V, V
5V, I =5mA
10mA, I −5mA, f
O
=
100µA
=10mA
0.5mA
V
V
I (off)
I (on)
Input voltage
−
V
O
=
O
Output voltage
−
0.1
−
0.3
0.88
0.5
−
V
mA
µA
−
I
O
I
=
V
O (on)
Input current
I
I
−
V
V
V
I
=
Output current
−
−
CC
=
I
=0V
I
O (off)
DC current gain
Transition frequency
Input resistance
Resistance ratio
Transition frequency of the device
G
I
30
−
−
O
=
O
f
T
250
10
1.0
−
MHz
kΩ
−
VCE
=
E=
=
100MHz
∗
R1
7
13
−
−
R2/R1
0.8
1.2
∗
!Packaging specifications
Package
Taping
Code
T2R
TR
T148
Basic ordering
unit (pieces)
8000
3000
3000
Type
EMG9
UMG9N
FMG9A
!Electrical characteristic curves
10m
5m
100
1k
VO
=0.3V
V
CC=5V
VO=5V
50
500
Ta=100˚C
25˚C
−40˚C
2m
1m
Ta=100˚C
25˚C
−40˚C
20
10
5
200
500µ
200µ
100
50
Ta=−40˚C
25˚C
100˚C
100µ
50µ
2
20
1
10
5
20µ
10µ
5µ
500m
200m
100m
2
1
2µ
1µ
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
0
0.5
1.0
1.5
2.0
2.5
3.0
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : VI (off) (V)
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
Fig.3 DC current gain vs. output
current
1
lO/lI=20
500m
Ta=100˚C
25˚C
−40˚C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
相关型号：
EMG9T2R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, EMT5, 5 PIN
ROHM
EMH-54/3-Q48N-L1C
DC-DC Regulated Power Supply Module, 1 Output, 164.32W, Hybrid, ROHS COMPLIANT, HALF BRICK, PACKAGE-9/5
MURATA
EMH-54/3-Q48N-L2C
DC-DC Regulated Power Supply Module, 1 Output, 164.32W, Hybrid, ROHS COMPLIANT, HALF BRICK, PACKAGE-9/5
MURATA
EMH-54/3-Q48NB-C
DC-DC Regulated Power Supply Module, 1 Output, 164.32W, Hybrid, HALF BRICK, PACKAGE-9/5
MURATA
EMH-54/3-Q48NB-L1C
DC-DC Regulated Power Supply Module, 1 Output, 164.32W, Hybrid, ROHS COMPLIANT, HALF BRICK, PACKAGE-9/5
MURATA
©2020 ICPDF网 联系我们和版权申明