EMZ5.1M [ROHM]
Zener Diode, 5.1V V(Z), 2.16%, 0.1W, Silicon, Unidirectional, MINIATURE, PLASTIC, EMD3, 2 PIN;
| 型号： | EMZ5.1M |
| 厂家： | 
ROHM |
| 描述： | Zener Diode, 5.1V V(Z), 2.16%, 0.1W, Silicon, Unidirectional, MINIATURE, PLASTIC, EMD3, 2 PIN 测试 光电二极管 |
| 文件： | 总1页 (文件大小：1127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Sub-miniature Composite Zener Diodes
Compact Zener Diodes
Type
VZ (V)
IZ (mA)
Circuit
Package
VMD2 (1006)
VDZ B series
EDZ B series
4.7~8.2V
5mA
EMD2 (1408)
VMD3
VMZ 6.8N
EMZ 6.8N
EMZ 5.1M
EMZ 5.6N
6.47~7.14V
EMD3
EMD5
4.98~5.20V
5.31~5.92V
5mA
EMZ 6.8E
6.47~7.14V
*Products with different voltages are available. Contact your ROHM representative.
n Absolute Maximum Ratings (Ta=25 C)
n External Dimensions (Unit: mm)
Item
Symbol
P
Rating
150
Unit
mW
C
EDZ B series
Permissible dissipation
Junction temperature
Storage temperature
Operating temperature
CATHODE MARK
Tj
Tstg
Topr
150
-55~+150
-55~+150
0.3±0.05
0.12±0.05
n Application
C
Voltage control
C
n Features
n Electrical Characteristics (Ta=25 C)
Operating
• Sub-miniature, 2-pin mini-
mold of high-density
mounting type: EMD2 (1208)
• High reliability
Operating
resistance
Reverse
current
resistance on
Zener voltage
rising edge
Item
VZ (V)
Min. Max.
ZZ (W) ZZk (W)
IR (mA)
I
Z
(
mA) Max.
100
80
I
Z
(
mA) Max.
I
Z
(
mA) Max.
VR
(V)
EDZ 4.3B 4.170 4.430
EDZ 4.7B 4.550 4.750
EDZ 5.1B 4.980 5.200
EDZ 5.6B 5.490 5.730
EDZ 6.2B 6.060 6.330
EDZ 6.8B 6.650 6.930
EDZ 7.5B 7.280 7.600
EDZ 8.2B 8.020 8.360
EDZ 9.1B 8.850 9.230
EDZ 10B 9.770 10.21
EDZ 11B 10.76 11.22
EDZ 12B 11.74 12.24
1000 1.0 5.0
800
1.0
TYPE NO.
(BLOCK)
500
200
100
2.0 1.5
2.5
0.8±0.05
0.6±0.1
60
3.0
3.5
4.0
5.0
6.0
7.0
8.0
9.0
1.0
40
5.0
5.0
0.5
n Markings (TYPE No.)
(EX) EDZ 4.7B
First Marking
Item
TYPE No
Item
TYPE No
60
EDZ 7.5B
EDZ 8.2B
EDZ 9.1B
EDZ 10B
EDZ 11B
EDZ 12B
EDZ 4.3B
EDZ 4.7B
EDZ 5.1B
EDZ 5.6B
EDZ 6.2B
EDZ 6.8B
8
9
H
30
0.5
Second Marking
J
2
A
L
0
2
C
E
F
9 2
(1) The Zener voltage (VZ) of each diode was measured 40ms after the diode was energized.
(2) The operating resistance (ZZ or ZZk) was measured with a specified current (IZ) plus a
minute alternating current superimposed.
5
1
2
n Absolute Maximum Ratings (Ta=25 C)
n External Dimensions (Unit: mm)
Item
Symbol
P
Rating
100
Unit
mW
C
VDZ B series
CATHODE MARK
Permissible dissipation
Junction temperature
Storage temperature
Operating temperature
0.27±0.03
0.13±0.03
Tj
Tstg
Topr
150
-55~+150
-55~+150
n Application
0 C
C
Voltage control
n Features
n Electrical Characteristics (Ta=25 C)
Operating
• Sub-miniature, 2-pin mini-
mold of high-density
mounting type: VMD2 (1006)
• High reliability
Operating
Reverse
current
resistance on
Zener voltage
resistance rising edge
Item
VZ (V)
Min. Max.
ZZ (W) ZZk (W)
IR (mA)
I
Z
(
mA) Max.
I
Z
(
mA) Max.
I
Z
(mA) Max.
V
R
(
V)
VDZ 4.7B 4.550 4.750
VDZ 5.1B 4.980 5.200
VDZ 5.6B 5.490 5.730
VDZ 6.2B 6.060 6.330
VDZ 6.8B 6.650 6.930
VDZ 7.5B 7.280 7.600
VDZ 8.2B 8.020 8.360
100
800
1.0
1.5
2.0
80
500
TYPE NO.
(BLOCK)
200
100
2.5
3.0
0.6±0.05
0.5±0.05
60
1.0
5.0
5.0
5.0
40
30
3.5
60
0.5 4.0
5.0
n Markings (TYPE No.)
(EX) VDZ 4.7B
First Marking
Item
TYPE No
(1) The Zener voltage (VZ) of each diode was measured 40ms after the diode was energized.
(2) The operating resistance (ZZ or ZZk) was measured with a specified current (IZ) plus a
minute alternating current superimposed.
VDZ 4.7B
VDZ 5.1B
VDZ 5.6B
VDZ 6.2B
VDZ 6.8B
VDZ 7.5B
VDZ 8.2B
9
A
C
E
F
H
J
Second Marking
2
9
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Zener Diode, 5.6V V(Z), 5.43%, 0.1W, Silicon, Unidirectional, MINIATURE, PLASTIC, EMD3, 2 PIN
ROHM
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