FMG9AT148 [ROHM]
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors); NPN 100毫安50V复杂的数字晶体管（偏置电阻内置晶体管）
| 型号： | FMG9AT148 |
| 厂家： | 
ROHM |
| 描述： | NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) |
| 文件： | 总8页 (文件大小：463K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMG9 / UMG9N / FMG9A
Datasheet
NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)
lOutline
EMT5
UMT5
Parameter
VCC
Tr1 and Tr2
50V
(3)
(5)
(1)
(4)
(1)
(4)
(2)
IC(MAX.)
R1
100mA
10kW
10kW
(3)
(5)
EMG9
(SC-107BB)
UMG9N
SOT-353 (SC-88A)
R2
SMT5
(1)
lFeatures
(2)
1) Built-In Biasing Resistors, R1 = R2 = 10kW.
(5)
(3)
2) Two DTC114E chips in one package.
3) Emitter(GND)-common type.
FMG9A
(SC-74A)
4) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see inner circuit).
5) The bias resistors consist of thin-film resistors
lInner circuit
with complete isolation to allow negative biasing
of the input. They also have the advantage of
completely eliminating parasitic effects.
6) Only the on/off conditions need to be set for
operation, making the circuit design easy.
7) Lead Free/RoHS Compliant.
EMG9 / UMG9N
FMG9A
GND
(2)
GND
(4)
IN
(3)
IN
(1)
IN
(3)
IN
(5)
(4)
(5)
(2)
(1)
OUT
OUT
OUT
OUT
lApplication
Inverter circuit, Interface circuit, Driver circuit
lPackaging specifications
Package
size
(mm)
Basic
ordering
unit (pcs)
Taping
code
Reel size Tape width
Part No.
Package
Marking
(mm)
(mm)
EMG9
EMT5
UMT5
SMT5
1616
2021
2928
T2R
TR
180
180
180
8
8
8
8,000
G9
G9
G9
UMG9N
FMG9A
3,000
T148
3,000
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
1/7
Data Sheet
EMG9 / UMG9N / FMG9A
lAbsolute maximum ratings (Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
VCC
VIN
Values
50
Unit
V
Supply voltage
Input voltage
V
-10 to +40
50
IO
mA
mA
mW
Output current
Collector current
*1
100
IC(MAX.)
150 (Total)*3
EMG9 / UMG9N
FMG9A
Power dissipation
*2
PD
300 (Total)*4
150
mW
°C
Tj
Junction temperature
Tstg
°C
Range of storage temperature
-55 to +150
lElectrical characteristics(Ta = 25°C)
<For Tr1 and Tr2 in common>
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Conditions
Min.
Typ.
Max.
Unit
V
VCC = 5V, IO = 100mA
VO = 0.3V, IO = 10mA
IO / II = 10mA / 0.5mA
VI = 5V
-
3
-
-
0.5
-
Input voltage
Output voltage
Input current
-
0.1
-
0.3
0.88
0.5
-
V
mA
mA
-
-
VCC = 50V, VI = 0V
VO = 5V, IO = 5mA
-
IO(off)
GI
Output current
DC current gain
Input resistance
Resistance ratio
-
-
30
7
-
R1
10
1
13
1.2
kW
-
R2/R1
-
0.8
VCE = 10V, IE = -5mA,
f = 100MHz
*1
Transition frequency
-
250
-
MHz
fT
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference footprint
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
2/7
Data Sheet
EMG9 / UMG9N / FMG9A
lElectrical characteristic curves (Ta = 25°C)
Fig.2 Output current vs. input voltage
Fig.1 Input voltage vs. output current
(ON characteristics)
(OFF characteristics)
OUTPUT CURRENT : IO [A]
INPUT VOLTAGE : VI(off)[V]
Fig.4 DC current gain vs. output current
Fig.3 Output current vs. output voltage
II= 260μA
50
240μA
220μA
40
30
20
200μA
180μA
160μA
140μA
120μA
10
Ta=25ºC
100μA
0A
0
0
5
10
OUTPUT CURRENT : IO [A]
OUTPUT VOLTAGE : VO [V]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
3/7
Data Sheet
EMG9 / UMG9N / FMG9A
lElectrical characteristic curves (Ta = 25°C)
Fig.5 Output voltage vs. output current
OUTPUT CURRENT : IO [A]
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
4/7
Data Sheet
EMG9 / UMG9N / FMG9A
lDimensions (Unit : mm)
D
A
EMT5
b
c
x
S A
e
y
S
S
b2
e
Patterm of terminal position areas
MILIMETERS
MIN
INCHES
DIM
MAX
0.10
0.55
0.27
0.18
1.70
1.30
MIN
0
MAX
0.004
0.022
0.011
0.007
0.067
0.051
A1
A
b
c
D
E
0.00
0.45
0.17
0.08
1.50
1.10
0.018
0.007
0.003
0.059
0.043
0.50
0.02
e
HE
L
Lp
x
1.50
0.10
-
-
-
1.70
0.30
0.35
0.10
0.10
0.059
0.004
-
-
-
0.067
0.012
0.014
0.004
0.004
y
MILIMETERS
MAX
1.25
INCHES
0.049
DIM
MIN
MIN
MAX
e1
b2
l1
-
-
0.37
0.45
-
-
0.015
0.018
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
5/7
Data Sheet
EMG9 / UMG9N / FMG9A
lDimensions (Unit : mm)
UMT5
D
A
c
e
Q
A3
b
x
S A
e
y
S
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
0.80
0.00
INCHES
DIM
MAX
1.00
0.10
MIN
0.031
0
MAX
0.039
0.004
A
A1
A3
b
c
D
0.25
0.65
0.01
0.15
0.10
1.90
1.15
0.30
0.20
2.10
1.35
0.006
0.004
0.075
0.045
0.012
0.008
0.083
0.053
E
e
0.03
HE
L1
Lp
Q
x
2.00
0.20
0.25
0.10
-
2.20
0.50
0.55
0.30
0.10
0.10
0.079
0.008
0.01
0.004
-
0.087
0.02
0.022
0.012
0.004
0.004
y
-
-
MILIMETERS
MAX
1.55
INCHES
0.06
DIM
MIN
MIN
MAX
e1
b2
l1
-
-
0.40
0.65
-
-
0.016
0.026
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
6/7
Data Sheet
EMG9 / UMG9N / FMG9A
lDimensions (Unit : mm)
SMT5
D
A
e
c
Q
A3
b
x
S A
e
y
S
S
b2
Patterm of terminal position areas
MILIMETERS
MIN
1.00
0.00
INCHES
DIM
MAX
1.30
0.10
MIN
-
0
MAX
0.051
0.004
A
A1
A3
b
c
D
0.25
0.95
0.01
0.25
0.09
2.80
1.50
0.40
0.25
3.00
1.80
0.01
0.004
0.11
0.016
0.01
0.118
0.071
E
e
0.059
0.04
HE
L1
Lp
Q
x
2.60
0.30
0.40
0.20
-
3.00
0.60
0.70
0.30
0.20
0.10
0.102
0.012
0.016
0.008
-
0.118
0.024
0.028
0.012
0.008
0.004
y
-
-
MILIMETERS
MAX
INCHES
0.08
DIM
MIN
MIN
MAX
2.10
e1
b2
l1
0.60
0.90
-
-
0.024
0.035
-
Dimension in mm/inches
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
2012.06 - Rev.B
7/7
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© 2012 ROHM Co., Ltd. All rights reserved.
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