FML10TR [ROHM]
Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SC-74A, 5 PIN;
| 型号： | FML10TR |
| 厂家： | 
ROHM |
| 描述： | Small Signal Bipolar Transistor, 1.5A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon, SC-74A, 5 PIN 开关 光电二极管 晶体管 |
| 文件： | 总4页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FML10
Transistors
General purpose transistor
(isolated transistor and diode)
FML10
2SD2652 and a RB461F are housed independently in a UMT package.
zExternal dimensions (Units : mm)
zApplications
DC / DC converter
Motor driver
FML10
zFeatures
CE
1) Tr : Low V (sat)
1.6
2.8
F
Di : Low V
2) Small package
0.3Min.
Each lead has same dimensions
Abbreviated symbol : L10
zStructure
Silicon epitaxial planar transistor
Schottky barrier diode
ROHM : SMT5
EIAJ : SC-74A
zEquivalent circuit
(3)
(4)
(5)
Di2
Tr1
(2)
(1)
zPackaging specifications
Type
Package
FML10
SMT5
L10
Marking
Code
TR
Basic ordering unit(pieces)
3000
1/4
FML10
Transistors
zAbsolute maximum ratings (Ta=25°C)
Tr1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
Unit
V
VCBO
VCEO
VEBO
15
12
V
6
1.5
V
I
C
A
Collector current
I
CP
3
A
Power dissipation
P
C
200
mW
°C
°C
Junction temperature
Tj
150
Range of storage temperature Tstg
−55~+150
Single pulse, PW=1ms
Di2
Parameter
Average rectified forward current
orward current surge peak (60H , 1∞)
Symbol
Limits
700
3
Unit
mA
A
I
F
F
Z
I
FSM
Reverse voltage (DC)
V
R
20
V
Junction temperature
Range of storage temperature
Tj
Tstg
125
−40~+125
°C
°C
zElectrical characteristics (Ta=25°C)
Tr1
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
15
12
6
−
−
−
−
−
−
−
V
V
I
I
I
C
=10µA
=1mA
Collector-emitter breakdown voltage BVCEO
C
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BVEBO
−
V
E
=10µA
I
CBO
EBO
CE(sat)
FE
−
100
100
nA
nA
V
CB=15V
I
−
VEB=6V
Collector-emitter saturation voltage
DC current gain
V
−
80 200 mV
I
C
/I
B
=500mA/25mA
=2V/200mA
CE=2V, I =−200mA, f=100MHz
CB=10V, I =0A, f=1MHz
h
270
−
−
680
−
−
V
V
V
CE/IC
Transition frequency
f
T
400
12
MHz
pF
E
Collector output capacitance
Cob
−
−
E
Pulsed
Di2
Parameter
Symbol
Min.
−
Typ.
Max.
490
200
Unit
mV
µA
Conditions
IF=700mA
Forward voltage
Reverse current
V
F
−
−
I
R
−
VR=20V
2/4
FML10
Transistors
zElectrical characteristic curves
Tr1
1000
10
1
1
0.1
IC/IB=20/1
Pulsed
Ta=25°C
Ta=100°C
VCE=2V
Ta=−40°C
Ta=25°C
Ta=100°C
V
BE(sat)
Ta=25°C
Ta=−40°C
Ta=100°C
0.1
100
Ta=25°C
Ta=−40°C
I
C/I
B=50/1
0.01
0.001
V
CE(sat)
IC/IB
=20/1
0.01
0.001
IC/IB=10/1
V
CE=2V
Pulsed
10
0.001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain
vs. collector current
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.3 Collector-emitter saturation voltage
vs. collector current
10
1
1000
1000
V
CE=2V
Ta=25°C
Pulsed
VCE=2V
f=100MHz
tstg
100
10
1
Ta=100°C
Ta=25°C
0.1
0.01
100
Ta=−40°C
tdon
tf
V
CE=2V
Ta=25°C
Pulsed
tr
10
−0.001
0.001
0
0.5
1.0
1.5
0.01
0.1
1
10
−0.01
−0.1
−1
(A)
−10
EMITTER CURRENT : I
E
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.5 Gain bandwidth product
vs. emitter current
Fig.6 Switching time
Fig.4 Grounded emitter propagation
characteristics
100
IE=0A
f=1MHz
Cib
Ta=25°C
Cob
10
1
0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
3/4
FML10
Transistors
Di2
10
1000m
100m
10m
1m
1
100m
10m
Ta=125°C
C
°
25
=−
Ta
100µ
10µ
Ta=25°C
1m
1µ
Ta=−25°C
0.1m
0.1µ
0
0.1
0.2
0.3
0.4
0.5
(V)
0.6
0
10
20
30
40
50
60
70
FORWARD VOLTAGE : V
F
REVERSE VOLTAGE : VR (V)
Fig.9 Forward characteristics
Fig.10 Reverse characteristics
4/4
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