FMP1 [ROHM]
Switching diode; 开关二极管
| 型号： | FMP1 |
| 厂家： | 
ROHM |
| 描述： | Switching diode |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
Diodes
Switching diode
FMN1 / FMP1 / IMN10 / IMN11 / IMP11
UMN1N / UMP1N / UMN11N / UMP11N
!Applications
!External dimensions (Units : mm)
Ultra high speed switching
FMN1 / FMP1
UMN1N / UMP1N
2.9 0.2
1.9 0.2
+0.2
−0.1
1.1
2.0 0.2
1.3 0.1
0.9 0.1
0.7
0.95 0.95
0.8 0.1
0.65 0.65
!Features
0∼0.1
∗
0∼0.1
∗
1) A wide variety of configurations are available.
(UMD5, UMD6, SMD5, SMD6)
2) Multiple diodes in one small surface mount package.
3) Diode characteristics are matched in the package.
+0.1
−0.05
0.2
0.15 0.05
+0.1
−0.05
+0.1
0.15
−0.06
0.3
(All leads have the same dimensions.)
(All leads have the same dimensions.)
ROHM : SMD5
EIAJ : SC-74A
JEDEC :
ROHM : UMD5
EIAJ : SC-88A
JEDEC : SOT-353
∗Marking
FMN1 : N1
∗Marking
UMN1N : N1
−
FMP1 : P1
UMP1N : P1
IMN10 / IMN11 / IMP11
UMN11N / UMP11N
2.9 0.2
+0.2
−0.1
1.1
1.9 0.2
2.0 0.2
1.3 0.1
!Construction
0.9 0.1
0.7
0.95 0.95
0.8 0.1
0.65 0.65
Silicon epitaxial planar
0∼0.1
0∼0.1
∗
∗
+0.1
−0.05
0.2
0.15 0.05
+0.1
−0.05
+0.1
0.15
−0.06
0.3
(All leads have the same dimensions.)
(All leads have the same dimensions.)
ROHM : SMD6
EIAJ : SC-74
JEDEC : SOT-457
ROHM : UMD6
EIAJ : SC-88
JEDEC : SOT-363
∗Marking
∗Marking
UMN11N : N11
IMN10 : N10
IMN11 : N11
IMP11 : P11
UMP11N : P11
!Circuit
FMN1
FMP1
IMN10
IMN11
IMP11
SMD5 / SMD6 Package
UMN1N
UMP1N
UMN11N
UMP11N
UMD5 / UMD6 Package
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
Diodes
!Absolute maximum ratings (Ta=25°C)
Power
Surge
current
(1µs)
Peak
reverse
voltage
DC
reverse
voltage
Peak
forward
current
Mean
rectifying
current
Storage
Junction
dissipation
temperature
temperature
Type
(TOTAL)
Pd (mW)
Tj (˚C)
Tstg (˚C)
I
FM (mA)
V
RM
(V)
V
R
(
V)
I
O
(mA)
Isurge
(A)
FMN1
UMN1N
80
80
80
25
25
0.25
150/80
150/80
150
−55∼+150
FMP1
UMP1N
80
80
80
80
80
80
80
0.25
4
150
150
150
−55∼+150
−55∼+150
−55∼+150
1
2
∗
∗
IMN10
300
300
100
100
300
150
IMN11
UMN11N
4
IMP11
UMP11N
2
∗
80
80
300
100
4
150
150
−55∼+150
∗1 Not to exceed 200mW per element.
∗2 Not to exceed 120mW per element.
!Electrical characteristics (Ta=25°C)
Forward voltage
Cond.
Reverse current Capacitance between terminals
Reverse recovery time
Cond.
trr (ns)
Type
Cond.
V)
Cond.
V
F
(V)
I
R
(µA)
C
Max.
T
(
pF)
Max.
Max.
Max.
I
F
(mA)
V
R
(
V
R
(
V) f (MHz)
V
R
(V)
IF (mA)
FMN1
UMN1N
0.9
5
5
0.1
70
3.5
6
1
4
6
5
FMP1
UMP1N
0.9
1.2
1.2
0.1
0.1
0.1
70
70
70
3.5
3.5
3.5
6
6
6
1
1
1
4
4
4
6
6
6
5
5
5
IMN10
100
100
IMN11
UMN11N
IMP11
UMP11N
1.2
100
0.1
70
3.5
6
1
4
6
5
!Electrical characteristic curves (Ta=25°C)
50
125
100
75
50
25
0
1 000
100
10
Ta=100˚C
75˚C
20
10
5
50˚C
25˚C
0˚C
2
1
1.0
−25˚C
0.5
Ta=25˚C
0.1
C
C
˚
C
˚
˚
0.2
0.1
C
˚
30
85
50
0
−
0.01
0
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE : V
0
25
50
75
100
125
150
10
20
30
40
V)
50
F (V)
AMBIENT TEMPERATURE : Ta (˚C)
REVERSE VOLTAGE : V
R
(
Fig. 2 Forward current vs.
forward voltage
(P Type)
Fig.3 Reverse current vs.
reverse voltage
(P Type)
Fig.1 Power reduction curve
FMN1 / FMP1 / IMN10 / IMN11 / IMP11 /
UMN1N / UMP1N / UMN11N / UMP11N
Diodes
1 000
100
10
50
Ta=25˚C
f=1MHz
Ta=100˚C
20
10
5
75˚C
4
50˚C
25˚C
2
1
0˚C
2
1.0
P Type
−25˚C
0.5
Ta=25˚C
0.1
N Type
C
C
˚
C
˚
˚
C
0.2
0.1
˚
85
50
30
0
−
0
0.010
10
REVERSE VOLTAGE : V
20
30
40
V)
50
0
2
4
6
8
10 12 14 16
0
0.2 0.4 0.6 0.8 1.0 1.2
FORWARD VOLTAGE : V
REVERSE VOLTAGE : V V)
R
(
F (V)
R
(
Fig.6 Capacitance between
terminals vs.
Fig.5 Reverse current vs.
reverse voltage
(N Type)
Fig.4 Forward current vs.
forward voltage
(N Type)
reverse voltage
10
0.01µF
D.U.T.
Ta=25˚C
6V
9
8
7
6
5
4
3
2
1
0
VR=
5kΩ
PULSE GENERATOR
OUTPUT 50Ω
SAMPLING
OSCILLOSCOPE
50Ω
P Type
N Type
INPUT
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT : I
F
(
mA)
100ns
Fig.7 Reverse recovery time vs.
forward current
OUTPUT
t
rr
0
Fig.8 Reverse recovery time (trr) measurement circuit
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