IMD8A [ROHM]
Digital Transistor Dual Digital Transistors for Inverter Drive; 数字晶体管双数字晶体管为逆变器驱动
| 型号： | IMD8A |
| 厂家： | 
ROHM |
| 描述： | Digital Transistor Dual Digital Transistors for Inverter Drive |
| 文件： | 总1页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IMD8A
Transistors
Digital Transistor
(Dual Digital Transistors for Inverter Drive)
IMD8A
!Features
!External dimensions (Units : mm)
1) Both the DTA144T chip and DTC144T chip in a SMT package.
!Absolute maximum ratings (Ta = 25°C)
1.6
2.8
Parameter
Symbol
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
V
V
CBO
CEO
EBO
50
50
5
V
V
0.3to0.6
I
C
100
mA
mW
°C
Each lead has same dimensions
Collector power dissipation
Storage temperature
Pc
300(TOTAL)
−55~+150
∗
Tstg
ROHM : SMT6
EIAJ : SC-74
200mW per element must not be exceeded. PNP type negative symbols have been omitted.
∗
!Package, marking, and packaging specifications
Type
IMD8A
SMT6
D8
Package
Marking
Code
T108
3000
Basic ordering unit (pieces)
!Circuit diagram
R1
R1
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
50
50
50
−
−
−
−
−
−
−
−
−
250
47
−
−
−
0.5
0.5
0.3
600
61.1
V
V
I
I
I
C
C
E
=
=
=
50µA
1mA
V
50µA
I
CBO
EBO
CE(sat)
FE
µA
µA
V
V
V
CB
=
=
50V
4V
I
EB
Emitter cutoff current
V
I
C
=
5mA , I
B
C
=
=
0.5mA
1mA
−
Collector-emitter saturation voltage
h
100
32.9
−
kΩ
V
CE =
5V , I
DC current transfer ratio
Input resistance
R1
PNP type negative symbols have been omitted.
相关型号：
IMD8AT108
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon, SC-74, 6 PIN
ROHM
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