PTZ12B [ROHM]

Zener diode; 稳压二极管
PTZ12B
型号: PTZ12B
厂家: ROHM    ROHM
描述:

Zener diode
稳压二极管

稳压二极管
文件: 总5页 (文件大小:231K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PTZ3.6B  
Diodes  
Zener diode  
PTZ3.6B  
zApplications  
zExternal dimensions (Unit : mm)  
zLand size figure (Unit : mm)  
Voltage regulation  
2.0  
2.6±0.2  
zFeatures  
1) Small power mold type. (PMDS)  
2) High ESD tolerance  
0.1±0.02  
ꢀꢀꢀ 0.1  
PMDS  
2.0±0.2  
1.5±0.2  
zConstruction  
Silicon epitaxial planar  
zStructure  
ROHM : PMDS  
JEDEC : SOD-106  
EX. PTZ10B  
Manufacture Date  
zTaping dimensions (Unit : mm)  
2.0±0.05  
4.0±0.1  
0.3  
φ1.55±0.05  
φ1.55  
2.9±0.1  
4.0±0.1  
2.8MAX  
zAbsolute maximum ratings (Ta=25°C)  
Parameter  
Power dissipation  
Limits  
1000  
Symbol  
Unit  
mW  
P
Tj  
Junction temperature  
Storage temperature  
150  
-55 to +150  
Tstg  
Rev.C  
1/4  
PTZ3.6B  
Diodes  
zElectrical characteristics (Ta=25°C)  
Symbol  
Operating resistance : Zz()  
μA  
)
Reverse current : IR(  
Zener voltage : Vz(V)  
Temperature coefficiency : *γz(mV/℃) ESD Break down voltage : ESD(kV)  
TYP.  
Test Condition  
MIN.  
MAX. Iz(mA)  
Max.  
15  
Iz(mA)  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
20  
20  
20  
20  
20  
20  
20  
10  
10  
10  
10  
10  
10  
MAX.  
60  
40  
20  
20  
20  
20  
20  
20  
20  
20  
20  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
10  
VR(V)  
1.0  
Iz(mA)  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
20  
20  
20  
20  
20  
20  
20  
10  
10  
10  
10  
10  
10  
MIN.  
TYP.  
3.813  
4.136  
TYP.  
-2.8  
-2.4  
-2.1  
-1.7  
-0.6  
1.4  
PTZ 3.6B 3.600  
PTZ 3.9B 3.900  
4.000  
4.400  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
40  
20  
20  
20  
20  
20  
20  
20  
10  
10  
10  
10  
10  
10  
15  
1.0  
1.0  
PTZ 4.3B  
PTZ 4.7B  
PTZ 5.1B  
PTZ 5.6B  
PTZ 6.2B  
PTZ 6.8B  
PTZ 7.5B  
PTZ 8.2B  
PTZ 9.1B  
PTZ 10B  
PTZ 11B  
PTZ 12B  
PTZ 13B  
PTZ 15B  
PTZ 16B  
PTZ 18B  
PTZ 20B  
PTZ 22B  
PTZ 24B  
PTZ 27B  
PTZ 30B  
PTZ 33B  
4.300  
4.700  
4.572  
4.924  
4.800  
15  
10  
8
5.200  
1.0  
5.100  
5.368  
5.700  
1.5  
5.600  
5.856  
6.300  
8
2.5  
6.200  
6.509  
7.000  
6
3.0  
2.5  
6.800  
7.280  
7.700  
6
3.5  
3.2  
7.500  
7.889  
8.400  
4
4.0  
4.2  
8.200  
8.655  
9.300  
4
5.0  
5.0  
C=150pF  
R=330Ω  
forward  
and  
reverse :  
10 times  
9.100  
9.747  
10.200  
11.200  
12.300  
13.500  
15.000  
16.500  
18.300  
20.300  
22.400  
24.500  
27.600  
30.800  
34.000  
37.000  
40.000  
6
6.0  
5.9  
10.000  
11.000  
12.000  
13.300  
14.700  
16.200  
18.000  
20.000  
22.000  
24.000  
27.000  
30.000  
33.000  
10.310  
11.510  
12.500  
13.820  
15.350  
16.860  
19.000  
20.820  
23.850  
6
7.0  
6.9  
30kV  
8
8.0  
7.9  
8
9.0  
8.7  
10  
10  
12  
12  
14  
14  
16  
16  
18  
18  
20  
10.0  
11.0  
12.0  
13.0  
15.0  
17.0  
10.1  
11.8  
13.3  
15.0  
17.4  
19.4  
25.310  
28.700  
31.570  
34.950  
39.240  
19.0  
21.0  
23.0  
25.0  
27.0  
21.6  
24.6  
27.5  
30.8  
37.0  
PTZ 36B 36.000  
1.The Zener voltage(Vz) is measured 40ms after power is supplied.  
2.The operating resistances(ZzZzk) are measured by superimposing a minute alternating current on the regulated current(Iz).  
zMarking (TYPE NO.)  
TYPE  
TYPE  
TYPE  
TYPENO.  
3.6B  
3.9B  
4.3B  
4.7B  
5.1B  
5.6B  
6.2B  
6.8B  
7.5B  
TYPENO.  
8.2B  
9.1B  
10B  
TYPEꢀNO.  
20B  
22B  
24B  
27B  
30B  
33B  
36B  
PTZ3.6B  
PTZ3.9B  
PTZ4.3B  
PTZ4.7B  
PTZ5.1B  
PTZ5.6B  
PTZ6.2B  
PTZ6.8B  
PTZ7.5B  
PTZ8.2B  
PTZ9.1B  
PTZ10B  
PTZ11B  
PTZ12B  
PTZ13B  
PTZ15B  
PTZ16B  
PTZ18B  
PTZ20B  
PTZ22B  
PTZ24B  
PTZ27B  
PTZ30B  
PTZ33B  
PTZ36B  
11B  
12B  
13B  
15B  
16B  
18B  
Rev.C  
2/4  
PTZ3.6B  
Diodes  
zElectrical characteristic curves (Ta=25°C)  
100  
5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15  
5.1  
16  
20  
22  
30  
18  
24  
27  
33  
36  
4.7  
4.3  
10  
3.9  
3.6  
1
0.1  
0.01  
0.001  
0
5
10  
15  
20  
25  
30  
35  
40  
45  
ZENER VOLTAGE:Vz(V)  
Vz-Iz CHARACTERISTICS  
10000  
1000  
100  
10  
1200  
PRSM  
1000  
800  
600  
400  
200  
0
t
1
0.001  
0.01  
0.1  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
AMBIENT TEMPERATURE:Ta(℃)  
Pd-TaꢀCHARACTERISTICS  
TIME:t(ms)  
PRSM-TIME CHARACTERISTICS  
Mounted on epoxy board  
0.12  
0.1  
40  
35  
30  
25  
20  
15  
10  
5
1000  
IM=10mA  
1ms  
IF=0.5A  
Rth(j-a)  
Rth(j-c)  
0.08  
0.06  
0.04  
0.02  
0
100  
10  
1
time  
300us  
-0.02  
-0.04  
-0.06  
-0.08  
0
-5  
0.1  
0
10  
20  
30  
40  
0.001  
0.1  
10  
1000  
TIME:t(ms)  
TIME:t(s)  
Rth-t CHARACTERISTICS  
IFSM-t CHARACTERISTICS  
Rev.C  
3/4  
PTZ3.6B  
Diodes  
Ta=75℃  
100  
10  
Ta=150℃  
Ta=125℃  
1000  
100  
100  
10  
1
Ta=125℃  
f=1MHz  
10  
Ta=75℃  
Ta=-25℃  
Ta=25℃  
1
Ta=150℃  
1
Ta=25℃  
0.1  
0.1  
Ta=-25℃  
0.01  
0.001  
0.0001  
0.01  
0.001  
0
1
2
3
4
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9  
REVERSE VOLTAGE:VR(V)  
VR-IR CHARACTERISTICS  
1
0
0.2  
0.4  
0.6  
0.8  
1
REVERSE VOLTAGE:VR(V)  
VR-Ct CHARACTERISTICS  
ZENER VOLTAGE:Vz(V)  
Vz-Iz CHARACTERISTICS  
60  
59  
58  
57  
56  
55  
54  
53  
52  
51  
50  
4
3.9  
3.8  
3.7  
3.6  
3.5  
1
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
Ta=25℃  
VR=0V  
f=1MHz  
n=10pcs  
Ta=25℃  
VR=1.0V  
n=30pcs  
Ta=25℃  
IZ=40mA  
n=30pcs  
AVE:3.813V  
AVE:55.43pF  
AVE:0.094nA  
Vz DISPERSION MAP  
IR DISPERSION MAP  
Ct DISPERSION MAP  
10000  
1000  
100  
30  
25  
20  
15  
10  
5
No break at 30kV  
10  
0
0.1  
1
10  
C=200pF  
R=0Ω  
C=100pF  
R=1.5kΩ  
C=150pF  
R=330Ω  
ZENER CURRENT:Iz(mA)  
Zz-Iz CHARACTERISTICS  
ESD DISPERSION MAP  
Rev.C  
4/4  
Appendix  
Notes  
No technical content pages of this document may be reproduced in any form or transmitted by any  
means without prior permission of ROHM CO.,LTD.  
The contents described herein are subject to change without notice. The specifications for the  
product described in this document are for reference only. Upon actual use, therefore, please request  
that specifications to be separately delivered.  
Application circuit diagrams and circuit constants contained herein are shown as examples of standard  
use and operation. Please pay careful attention to the peripheral conditions when designing circuits  
and deciding upon circuit constants in the set.  
Any data, including, but not limited to application circuit diagrams information, described herein  
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM  
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any  
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of  
whatsoever nature in the event of any such infringement, or arising from or connected with or related  
to the use of such devices.  
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or  
otherwise dispose of the same, no express or implied right or license to practice or commercially  
exploit any intellectual property rights or other proprietary rights owned or controlled by  
ROHM CO., LTD. is granted to any such buyer.  
Products listed in this document are no antiradiation design.  
The products listed in this document are designed to be used with ordinary electronic equipment or devices  
(such as audio visual equipment, office-automation equipment, communications devices, electrical  
appliances and electronic toys).  
Should you intend to use these products with equipment or devices which require an extremely high level of  
reliability and the malfunction of with would directly endanger human life (such as medical instruments,  
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other  
safety devices), please be sure to consult with our sales representative in advance.  
About Export Control Order in Japan  
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control  
Order in Japan.  
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)  
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.  
Appendix1-Rev1.1  

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