PWB200AA30 [ROHM]
Thyristor module suitable for low voltage, 3 phase recifier applications; 晶闸管模块，适用于低电压，三相recifier应用
| 型号： | PWB200AA30 |
| 厂家： | 
ROHM |
| 描述： | Thyristor module suitable for low voltage, 3 phase recifier applications |
| 文件： | 总2页 (文件大小：378K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
THYRISTOR MODULE
PWB200AA
PWB200AA is a Thyristor module suitable for low voltage, 3 phase recifier applications.
T AV
I
200A each device
high Surge Current 6000 A 60Hz
Easy Construction
Non-isolated. Mounting base as common Anode terminal
Applications
Welding power Supply
Various DC power Supply
Unit
A
Maximum Ratings
Ratings
Symbol
Item
Unit
PWB200AA30
PWB200AA40
VRRM
VRSM
VDRM
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
300
360
300
400
480
400
V
V
V
Symbol
Item
Conditions
Ratings
Unit
A
T AV
I
Average On-State Current
R.M.S. On-State Current
Surge On-State Current
200
Single phase, half wave, 180 conduction, Tc 121
Single phase, half wave, 180 conduction, Tc 121
T RMS
I
314
A
1
TSM
I
A
5400/6000
2cycle, 50Hz/60Hz, peak value, non-reqetitive
2
2
2
I t
I t
1499400
A S
GM
P
Peak Gate Power Dissipation
Average Gate Power Dissipation
Peak Gate Current
10
1
W
W
G AV
P
FGM
I
3
A
FGM
V
10
5
V
Peak Gate Voltage Forward
Peak Gate Voltage Reverse
Critical Rate of Rise of On-State Current
Operating Junction Temperature
Storage Temperature
RGM
V
V
50
di/dt
Tj
G
I
D
V
DRM
2V
G
/dt 1A
200mA Tj 25
dI
/
s
A/ s
40
40
150
125
Tstg
Mounting M6
Terminal M6
Recommended Value 2.5 3.9 25 40
Recommended Value 2.5 3.9 25 40
4.7 48
4.7 48
280
Mounting
torque
N
f B
Mass
g
Electrical Characteristics
Symbol
Item
Conditions
Ratings
60
Unit
mA
mA
V
DRM
I
Repetitive Peak Off-State Current, max.
Repetitive Peak Reverse Current, max.
Peak On-State Voltage, max.
Gate Trigger Current, max.
Gate Trigger Voltage, max.
Non-Trigger Gate, Voltage. min.
DRM
at V
at V
, Single phase, half wave, Tj 150
RRM
I
60
DRM
, Single phase, half wave, Tj 150
TM
V
1.20
150
2
On-State Current 630A, Tj 25 Inst. measurement
GT
I
mA
V
T
D
Tj 25
Tj 25
Tj 150
T
I
I
1A
1A
V
V
6V
6V
GT
V
T
D
1
GD
V
0.25
V
D
DRM
V
2V
G
I
200A I
200mA Tj 25
dI /dt 1A/ s
tgt
Turn On Time, max.
10
s
1
D
V
DRM
G
2V
2
Critical Rate of Rise of Off-State Voltage, min.
Holding Current, typ.
200
70
dv/dt
D
DRM
Tj 150
Tj 25
V
3V
Exponential wave.
V/ s
H
I
mA
1
Thermal Impedance, max.
0.12
Rth j-c
Junction to case
3Module
/W
61
PWB200AA
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