QH8MA3 [ROHM]
QH8MA3是低导通电阻的中功率MOSFET。采用小型表面安装封装，有助于节省空间。;
| 型号： | QH8MA3 |
| 厂家： | 
ROHM |
| 描述： | QH8MA3是低导通电阻的中功率MOSFET。采用小型表面安装封装，有助于节省空间。 |
| 文件： | 总20页 (文件大小：2123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QH8MA3
ꢀꢀ30V Nch+Pch Middle Power MOSFET
Datasheet
ꢀꢀ
llOutline
TSMT8
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
Tr1:Nch Tr2:Pch
30V -30V
Symbol
VDSS
ꢀ
ꢀ
ꢀ
RDS(on)(Max.)
29mΩ 48mΩ
±7.0A ±5.5A
2.5W
ꢀ
ꢀ
ID
PD
ꢀ
ꢀ
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llFeatures
1) Low on - resistance.
llInner circuit
2) Small Surface Mount Package (TSMT8).
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Embossed
Tape
Packing
llApplication
Reel size (mm)
180
8
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
MA3
llAbsolute maximum ratings (Ta = 25°C) ,unless otherwise specified.
Value
Tr1:Nch Tr2:Pch
Parameter
Drain - Source voltage
Symbol
VDSS
Unit
30
±7.0
±18
±20
1.8
-30
±5.5
±18
±20
1.1
V
A
*1
ID
Continuous drain current
Pulsed drain current
*2
ID, pulse
A
VGSS
Gate - Source voltage
Avalanche energy, single pulse
Avalanche current
V
*4
EAS
mJ
A
*4
IAS
5.0
-4.0
*1
PD
2.5
1.5
total
*3
PD
Power dissipation
W
*3
PD
element
1.25
150
Tj
Junction temperature
℃
℃
Tstg
Range of storage temperature
-55 to +150
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© 2015 ROHMCo., Ltd. All rights reserved.
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1/19
20150730 - Rev.002
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QH8MA3
Datasheet
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llThermal resistance
Values
Parameter
Symbol
Unit
Min. Typ. Max.
*3
RthJA
llElectrical characteristics (Ta = 25°C) , unless otherwise specified
Thermal resistance, junction - ambient
-
83.3
-
Values
Parameter
Symbol Type
Conditions
Unit
V
Min. Typ. Max.
V
= 0V, I = 1mA
Tr1
30
-
-
GS
D
Drain - Source breakdown
voltage
V(BR)DSS
Tr2 V = 0V, I = -1mA
-30
-
21
-22
-
-
-
GS
D
ΔV
I = 1mA, referenced to 25℃
ꢀ
ꢀ Tr1
(BR)DSS
-
D
Breakdown voltage
temperature coefficient
mV/℃
μA
ΔT
I = -1mA, referenced to 25℃
ꢀ
ꢀ
ꢀ
j ꢀ Tr2
-
-
D
Tr1 V = 30V, V = 0V
-
-
1
DS
GS
Zero gate voltage
drain current
IDSS
Tr2 V = -30V, V = 0V
-
-1
DS
GS
Tr1 V = 0V, V = ±20V
-
-
±100
±100
2.5
DS
GS
Gate - Source
leakage current
IGSS
nA
Tr2 V = 0V, V = ±20V
-
-
DS
DS
GS
V
V
= V , I = 1mA
Tr1
Tr2
1.0
-
GS
D
Gate threshold
voltage
VGS(th)
ΔV
V
= V , I = -1mA
-1.0
-
-3
2.9
22
35
37
55
-
-2.5
-
DS
GS D
I = 1mA, referenced to 25℃
D
ꢀ
ꢀ Tr1
-
GS(th)
Gate threshold voltage
temperature coefficient
mV/℃
ΔT
I = -1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
ꢀ
Tr2
-
-
-
j
V
GS
V
GS
V
GS
V
GS
= 10V, I = 7.0A
29
46
48
72
-
D
Tr1
Tr2
= 4.5V, I = 5.0A
-
D
Static drain - source
on - state resistance
*5
RDS(on)
mΩ
S
= -10V, I = -5.5A
-
D
= -4.5V, I = -4.0A
-
D
Tr1 V = 5V, I = 5A
2.7
3.3
DS
DS
D
*5
gfs
Transconductance
V
= -5V, I = -4A
Tr2
-
-
D
*1 Pw ≦ 1s, Limited only by maximum temperature allowed.
*2 Pw ≦ 10μs, Duty cycle ≦ 1%
*3 MOUNTED ONA CERAMIC BOARD
*4 Tr1: L ⋍ 100μH, V = 15V, R = 25Ω, STARTING T = 25℃ Fig.3-1,3-2
DD
G
ch
Tr2: L ⋍ 100μH, V = -15V, R = 25Ω, STARTING T = 25℃ Fig.6-1,6-2
DD
G
ch
*5 Pulsed
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
2/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
= 0V
Unit
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
300
50
-
-
-
-
-
-
-
GS
= 15V
pF
ns
DS
f = 1MHz
40
*5
V
DD
⋍ 15V, V = 10V
GS
td(on)
7.2
8.0
12
tr*5
I = 3.5A
D
*5
td(off)
R = 4.3Ω
Turn - off delay time
Fall time
L
tf*5
R = 10Ω
5.7
G
<Tr2>
Values
Parameter
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
480
85
-
-
-
-
-
-
-
GS
= -15V
DS
f = 1MHz
65
*5
V
DD
⋍ -15V, V = -10V
GS
td(on)
8.0
12
tr*5
I = -2.25A
D
ns
*5
td(off)
R = 6.7Ω
Turn - off delay time
Fall time
40
L
tf*5
R = 10Ω
20
G
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
3/19
20150730 - Rev.002
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QH8MA3
Datasheet
llGate charge characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Total gate charge
Symbol
Conditions
Unit
Min.
Typ. Max.
V
= 10V
= 4.5V
-
-
-
-
7.2
3.7
1.4
1.3
-
-
-
-
GS
*5
Qg
V
⋍ 15V
DD
nC
*5
I = 7A
V
Qgs
Gate - Source charge
Gate - Drain charge
<Tr2>
D
GS
*5
Qgd
Values
Parameter
Symbol
Conditions
Unit
nC
Min.
Typ. Max.
V
= -10V
= -4.5V
-
-
-
-
10
5.2
1.6
1.9
-
-
-
-
GS
*5
Qg
Total gate charge
V
⋍ -15V
DD
*5
I = -5.5A
V
Qgs
Gate - Source charge
Gate - Drain charge
D
GS
*5
Qgd
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
IS
Conditions
Unit
Min.
-
Typ. Max.
Body diode continuous
forward current
-
1.0
T = 25℃
A
V
a
Body diode
pulse current
*2
ISP
-
-
-
-
18
*5
VSD
Forward voltage
V
GS
= 0V, I = 1A
1.2
S
<Tr2>
Values
Parameter
Symbol
IS
Conditions
Unit
Min.
-
Typ. Max.
Body diode continuous
forward current
-
-1.0
T = 25℃
A
V
a
Body diode
pulse current
*2
ISP
-
-
-
-
-18
*5
VSD
Forward voltage
V
GS
= 0V, I = -1A
-1.2
S
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
4/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
5/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr1>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
6/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr1>
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Tranceconductance ꢀvs. Drain
Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
7/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr1>
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
8/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr1>
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr1>
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
10/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀꢀꢀꢀ
ꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
11/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr2>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
12/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr2>
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Tranceconductance ꢀvs. Drain
Current
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
13/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr2>
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
14/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr2>
Fig.14 Static Drain - Source On - State
Fig.15 Static Drain - Source On - State
ꢀResistance vs. Drain Current(I)
ꢀResistance vs. Drain Current(II)
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(III)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
15/19
20150730 - Rev.002
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QH8MA3
Datasheet
llElectrical characteristic curves <Tr2>
Fig.17 Typical Capacitance vs. Drain -
Fig.18 Switching Characteristics
ꢀSource Voltage
Fig.19 Dynamic Input Characteristics
Fig.20 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
16/19
20150730 - Rev.002
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QH8MA3
Datasheet
llMeasurement circuits <Tr1>
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
Fig.3-1 Avalanche Measurement Circuit
Fig.3-2 Avalanche Waveform
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
17/19
20150730 - Rev.002
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QH8MA3
Datasheet
llMeasurement circuits <Tr2>
Fig.4-1 Switching Time Measurement Circuit
Fig.4-2 Switching Waveforms
Fig.5-1 Gate Charge Measurement Circuit
Fig.5-2 Gate Charge Waveform
Fig.6-1 Avalanche Measurement Circuit
Fig.6-2 Avalanche Waveform
llNotice
This product might cause chip aging and breakdown under the large electrified environment.
Please consider to design ESD protection circuit.
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
18/19
20150730 - Rev.002
QH8MA3
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
19/19
20150730 - Rev.002
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