QS5Y2 [ROHM]
Midium Power Transistors (50V / 3A); 煤层炮功率晶体管（ 50V / 3A ）
| 型号： | QS5Y2 |
| 厂家： | 
ROHM |
| 描述： | Midium Power Transistors (50V / 3A) |
| 文件： | 总8页 (文件大小：489K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Midium Power Transistors (±50V / ±3A)
QS5Y2
Structure
Dimensions (Unit : mm)
NPN/PNP Silicon epitaxial planar transistor
TSMT5
Features
1) Low saturation voltage, typically
V
CE (sat) = -0.40V (Max.) (IC / IB= -1A / -50mA)
VCE (sat) = 0.35V (Max.) (IC / IB= 1A / 50mA)
2) High speed switching
(1) Base
(2) Collector
(3) Emitter
Abbreviated symbol : Y02
Applications
Low Frequency Amplifier
Driver
Packaging specifications
Inner circuit (Unit : mm)
Package
Code
TSMT5
TR
(5)
(4)
Type
Basic ordering unit (pieces) 3000
Tr.1
Tr.2
(3)
(1) Tr.1 Base
(2) Emitter
(3) Tr.2 Base
(4) Tr.2 Collector
(5) Tr.1 Collector
Absolute maximum ratings (Ta = 25C)
ꢀ<Tr.1>
(2)
(1)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
Limits
-50
-50
-6
Unit
V
VCBO
VCEO
VEBO
IC
V
V
DC
-3
A
Collector current
*1
Pulsed
ICP
-6
A
ꢀ<Tr.2>
Parameter
Symbol
VCBO
VCEO
VEBO
IC
Limits
Unit
V
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
50
50
6
V
V
DC
3
A
Collector current
*1
Pulsed
ICP
6
A
ꢀ<Tr.1 and Tr.2>
Parameter
Symbol
Limits
0.5
Unit
W/Total
W/Total
W/Element
C
*2
PD
*3
Power dissipation
PD
1.25
*3
PD
0.9
Junction temperature
Tj
150
Range of storage temperature
Tstg
-55 to 150
C
*1 Pw=10ms, Single Pulse
*2 Mounted on a recommended land.
*3 Mounted on a 25 x 25 x 0.8[mm] ceramic board.
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©2010 ROHM Co., Ltd. All rights reserved.
2010.11 - Rev.A
1/7
QS5Y2
Data Sheet
Electrical characteristics (Ta=25°C)
ꢀ<Tr.1>
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
IC= -1mA
BVCEO
BVCBO
BVEBO
ICBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
-50
-50
-6
-
-
-
-
IC= -100μA
-
V
IE= -100μA
-
-
V
VCB= -50V
-
-1
A
A
mV
-
IEBO
VEB= -4V
-
-
-200
-
-1
*1
VCE(sat)
IC=-1A, IB=-50mA
VCE= -3V, IC= -50mA
VCE= -10V
Collector-emitter staturation voltage
DC current gain
-
-400
450
hFE
180
*1
fT
Transition frequency
-
-
300
24
-
-
MHz
pF
IE=500mA, f=100MHz
VCB= -10V, IE=0A
f=1MHz
Cob
Collector output capacitance
t
Turn-on time
Storage time
Fall time
-
-
-
45
250
35
-
-
-
ns
ns
ns
on *2
IC= -1.5A, IB1= -150mA,
t
stg *2
~_
IB2=150mA, VCC -12V
tf
*2
*1 Pulsed
*2 See switching time test circuit
ꢀ<Tr.2>
Parameter
Symbol Min.
Typ.
Max.
Unit
V
Conditions
IC= 1mA
BVCEO
BVCBO
BVEBO
ICBO
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
50
50
6
-
-
-
IC= 100μA
-
V
IE= 100μA
-
-
V
VCB= 50V
-
-
1
A
A
mV
-
IEBO
VEB= 4V
-
-
130
-
1
*1
VCE(sat)
hFE
IC= 1A, IB= 50mA
VCE= 3V, IC= 50mA
Collector-emitter staturation voltage
DC current gain
-
350
450
180
VCE= 10V
IE=-500mA, f=100MHz
*1
fT
Transition frequency
-
-
320
13
-
-
MHz
pF
VCB= 10V, IE=0A
f=1MHz
Cob
Collector output capacitance
t
Turn-on time
Storage time
Fall time
-
-
-
50
450
80
-
-
-
ns
ns
ns
on *2
IC= 1.5A, IB1= 150mA,
t
stg *2
~_
IB2=-150mA, VCC 12V
tf
*2
*1 Pulsed
*2 See switching time test circuit
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©2010 ROHM Co., Ltd. All rights reserved.
2010.11 - Rev.A
2/7
Data Sheet
QS5Y2
ꢀ
Electrical characteristic curves (Ta = 25C)
〈Tr.1〉
Fig.1 Typical Output Characteristics
Fig.2 DC Current Gain vs. Collector Current ( I )
-5.0mA
-0.5
-3.0mA
-2.5mA
-4.0mA
1000
100
10
Ta=25°C
-0.4
-0.3
-0.2
-0.1
-2.0mA
-1.5mA
VCE= -5V
-3V
-1.0mA
IB=-0.5mA
Ta=25°C
0.0
0
-0.5
-1
-1.5
-2
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE : VCE[V]
Fig.3 DC Current Gain vs. Collector Current ( II )
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
-1
1000
VCE= -3V
Ta=25°C
-0.1
100
Ta=125°C
75°C
IC/IB=50
20
-0.01
25°C
10
-40°C
10
-1
-0.001
-10
-100
-1000
-10000
-1
-10
-100
-1000
-10000
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current
-1
Fig.6 Ground Emitter Propagation Characteristics
10000
1000
100
10
VCE= -3V
Ta=125°C
75°C
-0.1
25°C
-40°C
-0.01
Ta=125°C
75°C
25°C
-40°C
IC/IB=20
1
-0.001
0
-0.5
-1
-1.5
-1
-10
-100
-1000
-10000
BASE TO EMITTER VOLTAGE : VBE[V]
COLLECTOR CURRENT : IC[mA]
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©2010 ROHM Co., Ltd. All rights reserved.
3/7
2010.11 - Rev.A
Data Sheet
QS5Y2
ꢀ
Fig.8 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.7 Gain Bandwidth Product vs. Emitter Current
1000
1000
100
10
Ta=25°C
VCE= -10V
Cib
100
Cob
Ta=25°C
f=1MHz
IE=0A
IC=0A
10
1
10
100
1000
-0.1
-1
-10
-100
COLLECTOR - BASE VOLTAGE : VCB [V]
EMITTER - BASE VOLTAGE : VEB [V]
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
-10
1ms
10ms
-1
100ms
DC Ta=25°C
(Mounted on a
-0.1
recommended land)
Ta=25°C
When one element operated
Single non repetitive pulse
-0.01
-0.1
-1
-10
-100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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4/7
2010.11 - Rev.A
Data Sheet
QS5Y2
ꢀ
〈Tr.2〉
3.0mA
5mA
0.50
Fig.1 Typical OutputCharacteristics
2.5mA
2.0mA
Fig.2 DC Current Gain vs. Collector Current ( I )
1000
100
10
Ta=25°C
0.40
0.30
0.20
0.10
0.00
1.5mA
1.0mA
VCE=5V
3V
IB=0.5mA
Ta=25°C
0
0.5
1
1.5
2
1
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
COLECTOR TO EMITTER VOLTAGE :VCE[V]
Fig3. DC Current Gain vs. Collector Current ( II )
Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current ( I )
1000
100
10
1
VCE=3V
Ta=25°C
0.1
Ta=125°C
75°C
0.01
25°C
IC/IB=50
20
-40°C
10
0.001
1
10
100
1000
10000
1
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
COLLECTOR CURRENT : IC[mA]
Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( II )
1
Fig.6 Ground Emitter Propagation Characteristics
10000
1000
100
10
VCE=3V
0.1
Ta=125°C
75°C
25°C
-40°C
Ta=125°C
0.01
75°C
25°C
-40°C
IC/IB=20
0.001
1
0
0.5
1
1.5
1
10
100
1000
10000
COLLECTOR CURRENT : IC[mA]
BASE TO EMITTER VOLTAGE : VBE[V]
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5/7
2010.11 - Rev.A
©2010 ROHM Co., Ltd. All rights reserved.
Data Sheet
QS5Y2
ꢀ
Fig.8 Emitter Input Capacitance vs. Emitter-Base Voltage
Collector Output Capacitance vs. Collector-Base Voltage
Fig.7 Gain Bandwidth Product vs. Emitter Current
1000
100
10
1000
Ta=25°C
f=1MHz
IE=0A
Ta=25°C
VCE=10V
IC=0A
Cib
100
Cob
10
1
10
100
1000
0.1
1
10
100
COLLECTOR - BASE VOLTAGE : VCB (V)
EMITTER - BASE VOLTAGE : VEB (V)
EMITTER CURRENT : IE[mA]
Fig.9 Safe Operating Area
10
1
1ms
10ms
100ms
DC Ta=25°C
(Mounted on a
recommended land)
0.1
0.01
Ta=25°C
When one element operated
Single non repetitive pulse
0.1
1
10
100
COLLECTOR TO EMITTER VOLTAGE : VCE[V]
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©2010 ROHM Co., Ltd. All rights reserved.
6/7
2010.11 - Rev.A
QS5Y2
Data Sheet
Switching time test circuit
RL=8.2Ω
ꢀ<Tr.1>
IB1
VIN
Pw
IC
_
VCC -12V
~
IB2
_
~
Pw 50μs
DUTY CYCLE≦1%
IB2
BASE CURRENT WAVEFORM
IB1
ton
tstg
tf
COLLECTOR CURRENT WAVEFORM
90%
10%
IC
ꢀ<Tr.2>
RL=8.2Ω
V
IN
B1
I
C
I
VCC
12V
~_
IB2
Pw 50μs
~_
Pw
DUTY CYCLE≦1%
BASE CURRENT WAVEFORM
B1
I
IB2
ton
tstg
tf
COLLECTOR CURRENT WAVEFORM
90%
IC
10%
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©2010 ROHM Co., Ltd. All rights reserved.
2010.11 - Rev.A
7/7
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R1010
A
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