QS8J13 [ROHM]
QS8J13是低导通电阻的中功率MOSFET。采用小型表面安装封装，有助于节省空间。;
| 型号： | QS8J13 |
| 厂家： | 
ROHM |
| 描述： | QS8J13是低导通电阻的中功率MOSFET。采用小型表面安装封装，有助于节省空间。 |
| 文件： | 总12页 (文件大小：1337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QS8J13
ꢀꢀ-12V Pch+Pch Middle Power MOSFET
Datasheet
ꢀꢀ
llOutline
TSMT8
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
VDSS
-12V
22mΩ
±5.5A
1.5W
ꢀ
RDS(on)(Max.)
ꢀ
ꢀ
ID
ꢀ
ꢀ
PD
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llFeatures
llInner circuit
1) Low on - resistance.
2) Small Surface Mount Package .
3) Pb-free lead plating ; RoHS compliant.
4) Halogen Free.
llPackaging specifications
Embossed
Tape
Packing
Reel size (mm)
180
8
llApplication
Tape width (mm)
Type
Switching
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
J13
llAbsolute maximum ratings (Ta = 25°C) <It is the same ratings for the Tr1 and Tr2>
Parameter
Drain - Source voltage
Symbol
VDSS
Value
-12
Unit
V
*1
ID
Continuous drain current
Pulsed drain current
±5.5
A
*2
ID,pulse
±18
A
VGSS
Gate - Source voltage
0～-8
1.5
V
total
*3
PD
Power dissipation
W
element
1.25
Tj
Junction temperature
150
℃
℃
Tstg
Range of storage temperature
-55 to +150
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
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1/11
20140806 - Rev.001
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QS8J13
Datasheet
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llThermal resistance
Values
Parameter
Symbol
Unit
Min. Typ. Max.
total
-
-
83.3
100
-
-
*3
RthJA
Thermal resistance, junction - ambient
℃/W
element
llElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
ꢀ ꢀ ꢀ
Values
Parameter
Symbol
Conditions
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS
V
= 0V, I = -1mA
-12
-
-
-
-
V
GS
D
ΔV
ꢀ
ꢀI = -1mA
D
(BR)DSS
Breakdown voltage
temperature coefficient
-5.0
mV/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
Zero gate voltage
drain current
IDSS
V
V
V
= -12V, V = 0V
-
-
-
-
-
-10
-10
-1.0
μA
μA
V
DS
DS
DS
GS
Gate - Source
leakage current
IGSS
= 0V, V = -8V
GS
Gate threshold
voltage
VGS(th)
ΔV
= -6V, I = -1mA
-0.3
D
ꢀ
ꢀI = -1mA
GS(th)
D
Gate threshold voltage
temperature coefficient
-
2.7
-
V/℃
ΔT
ꢀ
ꢀ
ꢀ ꢀreferenced to 25℃
j
V
GS
V
GS
V
GS
V
GS
V
DS
= -4.5V, I = -5.5A
-
-
15
19
24
29
-
22
28
38
58
-
D
= -2.5V, I = -2.7A
D
Static drain - source
on - state resistance
*4
RDS(on)
mΩ
S
= -1.8V, I = -2.7A
-
D
= -1.5V, I = -1.1A
-
D
*4
gfs
= -6V, I = -5.5A
Transconductance
8.5
D
*1 Limited only by maximum temperature allowed.
*2 Pw ≤ 10μs, Duty cycle ≤ 1%
*3 Mounted on a ceramic board.
*4 Pulsed
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ꢀ
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
2/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Values
Parameter
Symbol
Conditions
Unit
pF
Min.
Typ.
6300
750
750
13
Max.
Ciss
Coss
Crss
Input capacitance
V
V
= 0V
-
-
-
-
-
-
-
-
-
-
-
-
-
-
GS
= -6V
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
DS
f = 1MHz
*4
V
DD
⋍ -6V,V = -4.5V
GS
td(on)
tr*4
I = -2.7A
100
400
200
D
ns
*4
td(off)
R = 2.2Ω
Turn - off delay time
Fall time
L
tf*4
R = 10Ω
G
llGate charge characteristics (Ta = 25°C) <It is the same characteristics for the Tr1 and Tr2>
Values
Parameter
Symbol
Conditions
Unit
nC
Min.
Typ.
60
10
9
Max.
*4
Qg
Total gate charge
-
-
-
-
-
-
V
V
⋍ -6V, I = -5.5A
DD
D
*4
Qgs
Gate - Source charge
Gate - Drain charge
= -4.5V
GS
*4
Qgd
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<It is the same characteristics for the Tr1 and Tr2>
Values
Typ.
Parameter
Symbol
Conditions
Unit
Min.
-
Max.
-1
Body diode continuous
forward current
*1
IS
-
T = 25℃
A
V
a
Body diode
pulse current
*2
ISP
-
-
-
-
-18
*4
VSD
Forward voltage
V
GS
= 0V, I = -5.5A
-1.2
S
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
3/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristic curves
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal ꢀ
ꢀꢀꢀꢀꢀꢀꢀResistance vs. Pulse Width
Fig.4 Single Pulse Maximum Power ꢀꢀꢀꢀ
ꢀꢀꢀꢀdissipation
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
4/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristic curves
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs. Junction
ꢀTemperature
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
5/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristic curves
Fig.8 Typical Transfer Characteristics
Fig.9 Gate Threshold Voltage vs. Junction
ꢀTemperature
Fig.10 Tranceconductance ꢀvs. Drain
Current
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
6/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristic curves
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀResistance vs. Gate Source Voltage
Fig.13 Static Drain - Source On - State
Fig.14 Static Drain - Source On - State
ꢀResistance vs. Junction Temperature
ꢀResistance vs. Drain Current(I)
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
7/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristic curves
Fig.15 Static Drain - Source On - State
Fig.16 Static Drain - Source On - State
ꢀResistance vs. Drain Current(II)
ꢀResistance vs. Drain Current(III)
Fig.17 Static Drain - Source On - State
Fig.18 Static Drain - Source On - State
ꢀResistance vs. Drain Current(Ⅳ)
ꢀResistance vs. Drain Current(Ⅴ)
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
8/11
20140806 - Rev.001
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QS8J13
Datasheet
llElectrical characteristic curves
Fig.19 Typical Capacitance vs. Drain -
Fig.20 Switching Characteristics
ꢀSource Voltage
Fig.21 Dynamic Input Characteristics
Fig.22 Source Current vs. Source Drain
ꢀVoltage
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
9/11
20140806 - Rev.001
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QS8J13
Datasheet
llMeasurement circuits
Fig.1-1 Switching Time Measurement Circuit
Fig.1-2 Switching Waveforms
Fig.2-1 Gate Charge Measurement Circuit
Fig.2-2 Gate Charge Waveform
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
10/11
20140806 - Rev.001
QS8J13
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Datasheet
llDimensions
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www.rohm.com
© 2014 ROHMCo., Ltd. All rights reserved.
11/11
20140806 - Rev.001
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