QS8M51TR [ROHM]
Power Field-Effect Transistor, 2A I(D), 100V, 0.355ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN;
| 型号： | QS8M51TR |
| 厂家： | 
ROHM |
| 描述： | Power Field-Effect Transistor, 2A I(D), 100V, 0.355ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT8, 8 PIN 开关 脉冲 光电二极管 晶体管 |
| 文件： | 总20页 (文件大小：3969K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QS8M51
ꢀꢀ100V Nch + Pch Middle Power MOSFET
Datasheet
ꢀꢀ
lOutline
TSMT8
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Symbol
Tr1:Nch Tr2:Pch
100V -100V
325mΩ 470mΩ
ꢀ
VDSS
ꢀ
ꢀ
RDS(on)(Max.)
ꢀ
ꢀ
ID
±2A
±1.5A
ꢀ
ꢀ
PD
1.5W
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llFeatures
llInner circuit
1) Low on - resistance.
2) Low voltage drive (4V drive).
3) Small Surface Mount Package (TSMT8).
llPackaging specifications
Embossed
Tape
Packing
llApplication
Reel size (mm)
180
8
Switching
Tape width (mm)
Type
Basic ordering unit (pcs)
Taping code
3000
TR
Marking
M51
llAbsolute maximum ratings (Ta = 25°C) ,unless otherwise specified.
Value
Tr1:Nch Tr2:Pch
Parameter
Drain - Source voltage
Symbol
Unit
VDSS
ID
100
±2
-100
±1.5
±6
V
A
A
V
Continuous drain current
Pulsed drain current
*1
ID, pulse
±6
VGSS
Gate - Source voltage
±20
±20
*2
PD
1.5
0.7
total
*3
PD
Power dissipation
W
*2
PD
element
1.25
150
Tj
Junction temperature
℃
℃
Tstg
Range of storage temperature
-55 to +150
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© 2015 ROHMCo., Ltd. All rights reserved.
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1/19
20150730 - Rev.001
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QS8M51
Datasheet
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llThermal resistance
Values
Parameter
Symbol
Unit
Min. Typ. Max.
total
-
-
-
-
-
-
83.3
*2
RthJA
Thermal resistance, junction - ambient
element
total
100 ℃/W
*3
RthJA
178
lElectrical characteristics (Ta = 25°C) , unless otherwise specified
Values
Parameter
Symbol Type
Conditions
Unit
Min. Typ. Max.
Tr1 V = 0V, I = 1mA
100
-
-
-
GS
D
Drain - Source breakdown
voltage
V(BR)DSS
V
mV/℃
μA
Tr2 V = 0V, I = -1mA
-100
-
GS
D
ΔV
I = 1mA, referenced to 25℃
D
ꢀ
ꢀ Tr1
-
116.9
-
(BR)DSS
Breakdown voltage
temperature coefficient
ΔT
I = -1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
j ꢀ Tr2
-
-91.3
-
Tr1 V = 100V, V = 0V
-
-
1
DS
GS
Zero gate voltage
drain current
IDSS
Tr2 V = -100V, V = 0V
-
-
-1
±10
±10
2.5
-2.5
-
DS
GS
Tr1 V = 0V, V = ±20V
-
-
-
DS
GS
Gate - Source
leakage current
IGSS
μA
Tr2 V = 0V, V = ±20V
-
DS
GS
Tr1 V = 10V, I = 1mA
1.0
-
DS
D
Gate threshold
voltage
VGS(th)
ΔV
V
Tr2 V = -10V, I = -1mA
-1.0
-
DS
D
I = 1mA, referenced to 25℃
D
ꢀ
ꢀ Tr1
-
-3.6
3.0
GS(th)
Gate threshold voltage
temperature coefficient
mV/℃
ΔT
I = -1mA, referenced to 25℃
D
ꢀ
ꢀ
ꢀ
ꢀ
Tr2
-
-
j
V
= 10V, I = 2A
-
240 325
250 340
260 355
350 470
380 510
400 540
GS
D
Tr1 V = 4.5V, I = 2A
-
-
GS
GS
GS
D
V
V
= 4.0V, I = 2A
D
Static drain - source
on - state resistance
*3
RDS(on)
mΩ
S
= -10V, I = -1.5A
-
D
Tr2 V = -4.5V, I = -0.75A
-
GS
GS
D
V
= -4.0V, I = -0.75A
-
D
Tr1 V = 10V, I = 2A
1.9
1.5
-
-
-
-
DS
D
Forward Transfer
Admittance
|Y |*3
fs
Tr2 V = -10V, I = -1.5A
DS
D
*1 Pw ≦ 10μs, Duty cycle ≦ 1%
*2 Mounted on a ceramic boad (30×30×0.8mm)
*3Mounted on a FR4 (12×20×0.8mm)
*4 Pulsed
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© 2015 ROHMCo., Ltd. All rights reserved.
2/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
= 0V
Unit
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
290
30
20
10
10
30
15
-
-
-
-
-
-
-
GS
= 25V
pF
ns
DS
f = 1MHz
*3
V
DD
⋍ 50V, V = 10V
GS
td(on)
tr*3
I = 1A
D
*3
td(off)
R = 50Ω
Turn - off delay time
Fall time
L
tf*3
R = 10Ω
G
<Tr2>
Values
Parameter
Symbol
Conditions
= 0V
Unit
pF
Min.
Typ. Max.
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
V
V
-
-
-
-
-
-
-
950
45
20
10
15
60
10
-
-
-
-
-
-
-
GS
= -25V
DS
f = 1MHz
*3
V
DD
⋍ -50V, V = -10V
GS
td(on)
tr*3
I = -0.75A
D
ns
*3
td(off)
R = 66Ω
Turn - off delay time
Fall time
L
tf*3
R = 10Ω
G
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© 2015 ROHMCo., Ltd. All rights reserved.
3/19
20150730 - Rev.001
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QS8M51
Datasheet
llGate charge characteristics (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ. Max.
*3
Qg
Total gate charge
-
-
-
4.7
1.2
1.8
-
-
-
V
V
⋍ 50V, I = 2A
= 5V
DD
D
*3
Qgs
Gate - Source charge
Gate - Drain charge
nC
GS
*3
Qgd
<Tr2>
Values
Parameter
Symbol
Conditions
Unit
nC
Min.
Typ. Max.
*3
Qg
Total gate charge
-
-
-
17.0
4.5
-
-
-
V
V
⋍ -50V, I = -1.5A
DD
D
*3
Qgs
Gate - Source charge
Gate - Drain charge
= -5V
GS
*3
Qgd
5.0
llBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
<Tr1>
Values
Parameter
Symbol
IS
Conditions
Unit
Min.
-
Typ. Max.
Body diode continuous
forward current
-
1.0
T = 25℃
A
V
a
Body diode
pulse current
*1
ISP
-
-
-
-
6
*3
VSD
Forward voltage
V
GS
= 0V, I = 2A
1.2
S
<Tr2>
Values
Parameter
Symbol
IS
Conditions
Unit
Min.
-
Typ. Max.
Body diode continuous
forward current
-
-1.0
T = 25℃
A
V
a
Body diode
pulse current
*1
ISP
-
-
-
-
-6
*3
VSD
Forward voltage
V
GS
= 0V, I = -0.75A
-1.2
S
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© 2015 ROHMCo., Ltd. All rights reserved.
4/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr1>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀResistance vs. Pulse Width
ꢀꢀꢀꢀdissipation
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© 2015 ROHMCo., Ltd. All rights reserved.
5/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr1>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Fig.8 Typical Transfer Characteristics
ꢀꢀꢀꢀꢀJunction Temperature
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© 2015 ROHMCo., Ltd. All rights reserved.
6/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr1>
Fig.9 Gate Threshold Voltage vs.
Fig.10 Forward Transfer Admittance vs.
ꢀꢀꢀꢀꢀJunction Temperature
ꢀꢀꢀꢀꢀDrain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
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© 2015 ROHMCo., Ltd. All rights reserved.
7/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr1>
Fig.13 Static Drain - Source On - State
Fig.14 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Junction Temperature
ꢀꢀꢀꢀꢀResistance vs. Drain Current (I)
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© 2015 ROHMCo., Ltd. All rights reserved.
8/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr1>
Fig.15 Static Drain - Source On - State
Fig.16 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IlI)
Fig.17 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IV)
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
9/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr1>
Fig.18 Typical Capacitance vs.
Fig.19 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.20 Dynamic Input Characteristics
Fig.21 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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© 2015 ROHMCo., Ltd. All rights reserved.
10/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr2>
Fig.1 Power Dissipation Derating Curve
Fig.2 Maximum Safe Operating Area
Fig.3 Normalized Transient Thermal
Fig.4 Single Pulse Maximum Power
ꢀꢀꢀꢀꢀResistance vs. Pulse Width
ꢀꢀꢀꢀꢀdissipation
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© 2015 ROHMCo., Ltd. All rights reserved.
11/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr2>
Fig.5 Typical Output Characteristics(I)
Fig.6 Typical Output Characteristics(II)
Fig.7 Breakdown Voltage vs.
Fig.8 Typical Transfer Characteristics
ꢀꢀꢀꢀꢀꢀJunction Temperature
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
12/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr2>
Fig.9 Gate Threshold Voltage vs.
Fig.10 Forward Transfer Admittance vs.
ꢀꢀꢀꢀꢀJunction Temperature
ꢀꢀꢀꢀꢀDrain Current
Fig.11 Drain Current Derating Curve
Fig.12 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Gate Source Voltage
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© 2015 ROHMCo., Ltd. All rights reserved.
13/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr2>
Fig.13 Static Drain - Source On - State
Fig.14 Static Drain - Source On - State
ꢀꢀꢀResistance vs. Junction Temperature
ꢀꢀꢀꢀꢀResistance vs. Drain Current (I)
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© 2015 ROHMCo., Ltd. All rights reserved.
14/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr2>
Fig.15 Static Drain - Source On - State
Fig.16 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (II)
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IlI)
Fig.17 Static Drain - Source On - State
ꢀꢀꢀꢀꢀResistance vs. Drain Current (IV)
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© 2015 ROHMCo., Ltd. All rights reserved.
15/19
20150730 - Rev.001
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QS8M51
Datasheet
llElectrical characteristic curves <Tr2>
Fig.18 Typical Capacitance vs.
Fig.19 Switching Characteristics
ꢀꢀꢀꢀꢀꢀDrain - Source Voltage
Fig.20 Dynamic Input Characteristics
Fig.21 Source Current vs.
ꢀꢀꢀꢀꢀꢀSource Drain Voltage
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© 2015 ROHMCo., Ltd. All rights reserved.
16/19
20150730 - Rev.001
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QS8M51
Datasheet
llMeasurement circuits <Tr1>
図 1-1 SWITCHING TIME MEASUREMENT CIRCUIT
図 1-2 SWITCHING WAVEFORMS
図 2-1 GATE CHARGE MEASUREMENT CIRCUIT
図 2-2 GATE CHARGE WAVEFORM
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17/19
20150730 - Rev.001
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QS8M51
Datasheet
llMeasurement circuits <Tr2>
図 3-1 SWITCHING TIME MEASUREMENT CIRCUIT
図 3-2 SWITCHING WAVEFORMS
図 4-1 GATE CHARGE MEASUREMENT CIRCUIT
図 4-2 GATE CHARGE WAVEFORM
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
18/19
20150730 - Rev.001
QS8M51
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Datasheet
llDimensions
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www.rohm.com
© 2015 ROHMCo., Ltd. All rights reserved.
19/19
20150730 - Rev.001
相关型号：
QSA
Excellent tactile feel, SMT switch adapted for low current, Only actuate 1 direction at a time
ITT
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