QST2 [ROHM]

General purpose amplification (−12V, −3A); 通用扩增（ -12V ， -3A ）


型号：	QST2
厂家：	ROHM
描述：	General purpose amplification (−12V, −3A) 通用扩增（ -12V ， -3A ）
文件：	总3页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

QST2

Transistors

General purpose amplification (−12V, −3A)

QST2

zExternal dimensions (Unit : mm)

zApplication

Low frequency amplifier

Driver

2.8

1.6

zFeatures

1) Collector current is large.

2) Collector saturation voltage is low.

−

V^CE(sat)

250mV

−

at I^C= 3A / IB = 60mA

Each lead has same dimensions

ROHM : TSMT6

Abbreviated symbol : T02

zEquivalent circuit

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Symbol

Limits

−15

−12

−6

Unit

VCBO

VCEO

VEBO

6pin 5pin

4pin

−6

−10

500

1.25

°C

Collector current

∗

Power dissipation

Junction temperature

150

1pin 2pin

3pin

Range of storage temperature Tstg

−55 to +150

1 Single pulse, Pw=1ms

∗

2 Each Terminal Mounted on a Recommended

3 Mounted on a 25mm×25mm×

^t0.8mm Ceramic substrate

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

−15

−12

−6

−

270

Typ.

−

Max.

−

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BV^CEO

BV^EBO

= −10µA

= −1mA

−

= −10µA

CB= −15V

EB= −6V

CBO

EBO

CE(sat)

−100

−250

680

−

Emitter cutoff current

−

Collector-emitter saturation voltage

DC current gain

−120

−

250

C= −3A, I

= −60mA

∗

CE= −2V, I

C= −500mA

Transition frequency

−

MHz

=500mA, f=100MHz

CB= −10V, I

=0A, f=1MHz

Corrector output capacitance

Cob

−

Pulsed

∗

Rev.B

1/2

QST2

Transistors

zPackaging specifications

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

QST2

zElectrical characteristic curves

1000

0.1

Ta=25°C

=20/1

=50/1

Pulsed

Ta= −40°C

Ta=125°C

Ta=25°C

Pulsed

Ta=125°C

Ta= −40°C

/IB=50/1

/IB=20/1

/IB=10/1

BE(sat)

100

0.1

0.01

Ta=25°C

Ta= −40°C

Ta=125°C

0.01

0.001

CE(sat)

CE= −2V

Pulsed

0.001

0.01

0.1

0.001

0.01

0.1

0.001

0.01

0.1

COLLECTOR CURRENT : IC (A)

Fig.1 DC current gain

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs. collector current

Fig.3 Collector-emitter saturation voltage

vs. collector current

1000

10000

CE= −2V

Ta=25°C

CE= −2V

f=100MHz

1MHz

Pulsed

Ta=125°C

Cib

1000

100

Ta=25°C

Ta= −40°C

100

Cob

0.1

0.01

0.1

0.001

0.01

0.1

100

BASE TO EMITTER CURRENT : V^BE(V)

EMITTER TO BASE VOLTAGE : VEB (V)

EMITTER CURRENT : I

(A)

COLLECTOR TO BASE VOLTAGE : V^CB(V)

Fig.4 Grounded emitter propagation

characteristics

Fig.5 Gain bandwidth product

vs. emitter current

Fig.6 Collector output capacitance

vs. collector-base voltage

Emitter input capacitance

vs. emitter-base voltage

Rev.B

2/2

Appendix

Notes

No technical content pages of this document may be reproduced in any form or transmitted by any

means without prior permission of ROHM CO.,LTD.

The contents described herein are subject to change without notice. The specifications for the

product described in this document are for reference only. Upon actual use, therefore, please request

that specifications to be separately delivered.

Application circuit diagrams and circuit constants contained herein are shown as examples of standard

use and operation. Please pay careful attention to the peripheral conditions when designing circuits

and deciding upon circuit constants in the set.

Any data, including, but not limited to application circuit diagrams information, described herein

are intended only as illustrations of such devices and not as the specifications for such devices. ROHM

CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any

third party's intellectual property rights or other proprietary rights, and further, assumes no liability of

whatsoever nature in the event of any such infringement, or arising from or connected with or related

to the use of such devices.

Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or

otherwise dispose of the same, no express or implied right or license to practice or commercially

exploit any intellectual property rights or other proprietary rights owned or controlled by

ROHM CO., LTD. is granted to any such buyer.

Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices

(such as audio visual equipment, office-automation equipment, communications devices, electrical

appliances and electronic toys).

Should you intend to use these products with equipment or devices which require an extremely high level of

reliability and the malfunction of with would directly endanger human life (such as medical instruments,

transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other

safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control

Order in Japan.

In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)

on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1

QST2 [ROHM]

相关型号：

QST3

QST3TR

QST4

QST4TR

QST5

QST508AB0

QST508AB1

QST508AH0

QST508AH1

QST508AM0

QST508AM1

QST508AN0