QST6 [ROHM]

Low frequency amplifier; 低频放大器


型号：	QST6
厂家：	ROHM
描述：	Low frequency amplifier 低频放大器放大器
文件：	总2页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

QST6

Transistors

Low frequency amplifier

QST6

!External dimensions (Units : mm)

!Application

Low frequency amplifier

Driver

2.8

1.6

!Features

2) V

A collector current is large.

−

CE(sat)

180mV

−

At I = 1A / I = 50mA

Each lead has same dimensions

Abbreviated symbol : T06

!Equivalent circuit

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Symbol

Limits

−15

−12

Unit

(6)

(5)

(4)

VCBO

VCEO

VEBO

Collector-emitter voltage

Emitter-base voltage

−6

−2

−4

500

150

Collector current

A^∗1

mW^∗2

°C

Tstg

Power dissipation

Junction temperature

(1)

(2)

(3)

Range of storage temperature

−55~+150

∗1Single pulse, P =1ms

∗2Each Termminal Mounted on a Recommended

!Electrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

BV^CEO

BV^EBO

Min.

Typ.

−

Max.

−

Unit

Conditions

−15

−12

−6

−

270

−

=−10µA

=−1mA

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

=−10µA

CBO

EBO

CE(sat)

−100

−180

680

−

MHz

CB=−15V

EB=−6V

−

Emitter cutoff current

−100

−

360

C=−1A, I

=−50mA

=−200mA^∗

=200mA, f=100MHz^∗

=0A, f=1MHz

Collector-emitter saturation voltage

DC current gain

CE=−2V, I

CB=−10V, I

Transition frequency

Cob

−

Collector output capacitance

∗ Pulsed

1/2

QST6

Transistors

!Packaging specifications

Package

Taping

Type

Code

Basic ordering unit (pieces)

3000

QST6

!Electrical characteristic curves

1000

−1

−0.1

Ta=25°C

PULSED

Ta=100°C

BE(sat)

CE(sat)

25°C

Ta=−40°C

Ta=25°C

Ta=100°C

−40°C

C/I

=50

100

0.1

Ta=100°C

Ta=25°C

Ta=−40°C

−0.01

−0.001

0.01

CE=−2V

C B=20

PULSED

−0.001

0.001

−0.01

−0.1

−1

−10

0.01

0.1

−0.001

−0.01

−0.1

−1

−10

COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : I

(A)

COLLECTOR CURRENT : IC (A)

Fig.2 Collector-emitter saturation voltage

base-emitter saturation voltage

vs.collector current

Fig1. DC current gain

vs.collector current

Fig.3 Collector-emitter saturation voltage

vs.collector current

1000

−10

−1

1000

Ta=25°C

CE=−2V

PULSED

Ta=100°C

100

tstg

25°C

−40°C

−0.1

−0.01

100

tdon

Ta=25°C

PULSED

CE=−2V

Ta=25°C

PULSED

C=20 I

1=−20I

−0.001

0.001

−0.5

BASE TO EMITTER CURRENT : VBE (V

−1

−0.001

−0.01

−0.1

−1

0.01

0.1

)

EMITTER CURRENT : I

(

COLLECTOR CURRENT : I

C (A)

Fig.6 Switching time

Fig.4 Grounded emitter propagation characteristics

Fig.5 Gain bandwidth product

vs.emitter current

1000

25°C

1MHz

100

Cib

Cob

−0.1

−1

EMITTER TO BASE VOLTAGE : VEB

COLLECTOR TO BASE VOLTAGE : VCB

−10

−100

(V)

Fig7. Collector output capacitance vs.collector-base voltage

Emitter input capacitance vs.emitter-base voltage

2/2